JP2014508318A5 - - Google Patents
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- Publication number
- JP2014508318A5 JP2014508318A5 JP2013549914A JP2013549914A JP2014508318A5 JP 2014508318 A5 JP2014508318 A5 JP 2014508318A5 JP 2013549914 A JP2013549914 A JP 2013549914A JP 2013549914 A JP2013549914 A JP 2013549914A JP 2014508318 A5 JP2014508318 A5 JP 2014508318A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- surfactant
- photoresist layer
- patterned
- atom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004094 surface-active agent Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 5
- 230000003068 static effect Effects 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims 9
- 238000000034 method Methods 0.000 claims 8
- 238000007654 immersion Methods 0.000 claims 4
- 239000000463 material Substances 0.000 claims 4
- 125000001165 hydrophobic group Chemical group 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 230000007547 defect Effects 0.000 claims 2
- 239000007788 liquid Substances 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims 2
- 125000004437 phosphorous atom Chemical group 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910052717 sulfur Inorganic materials 0.000 claims 2
- 125000004434 sulfur atom Chemical group 0.000 claims 2
- 125000000129 anionic group Chemical group 0.000 claims 1
- 239000007864 aqueous solution Substances 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- 125000002091 cationic group Chemical group 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 125000006340 pentafluoro ethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 claims 1
- -1 pentafluorosulfanyl Chemical group 0.000 claims 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims 1
- 239000007983 Tris buffer Substances 0.000 description 2
- QUVOIYPIGVXRFH-UHFFFAOYSA-N 1,1,1,2,2,3,3,5,5,6,6,7,7,7-tetradecafluoro-4-(1,1,2,2,3,3,3-heptafluoropropyl)heptane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)F QUVOIYPIGVXRFH-UHFFFAOYSA-N 0.000 description 1
- ADXNCAXPFSPTFP-UHFFFAOYSA-N CS(=O)(=O)O.FC(C(F)(F)F)(F)[Na] Chemical compound CS(=O)(=O)O.FC(C(F)(F)F)(F)[Na] ADXNCAXPFSPTFP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- SDPVLFJCGHYSNS-UHFFFAOYSA-N [Na].CS(=O)(=O)NC(C(C(F)(F)F)(F)F)(F)F Chemical compound [Na].CS(=O)(=O)NC(C(C(F)(F)F)(F)F)(F)F SDPVLFJCGHYSNS-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161435820P | 2011-01-25 | 2011-01-25 | |
| US61/435,820 | 2011-01-25 | ||
| PCT/IB2012/050218 WO2012101545A1 (en) | 2011-01-25 | 2012-01-17 | Use of surfactants having at least three short-chain perfluorinated groups for manufacturing integrated circuits having patterns with line-space dimensions below 50nm |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014508318A JP2014508318A (ja) | 2014-04-03 |
| JP2014508318A5 true JP2014508318A5 (enExample) | 2016-03-17 |
| JP6118732B2 JP6118732B2 (ja) | 2017-04-19 |
Family
ID=46580262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013549914A Expired - Fee Related JP6118732B2 (ja) | 2011-01-25 | 2012-01-17 | 線間間隔が５０ｎｍ未満であるパターンを有する集積回路を製造するための３個以上の短鎖全フッ素化基Ｒｆを有する界面活性剤の使用方法。 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US9236256B2 (enExample) |
| EP (1) | EP2668248B1 (enExample) |
| JP (1) | JP6118732B2 (enExample) |
| KR (1) | KR102004148B1 (enExample) |
| CN (1) | CN103328610B (enExample) |
| IL (1) | IL227075A (enExample) |
| MY (1) | MY161218A (enExample) |
| RU (1) | RU2584204C2 (enExample) |
| SG (1) | SG191738A1 (enExample) |
| WO (1) | WO2012101545A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9236256B2 (en) | 2011-01-25 | 2016-01-12 | Basf Se | Use of surfactants having at least three short-chain perfluorinated groups RF for manufacturing integrated circuits having patterns with line-space dimensions below 50 NM |
| CN103430102B (zh) | 2011-03-18 | 2017-02-08 | 巴斯夫欧洲公司 | 制造具有带50nm及更小行间距尺寸的图案化材料层的集成电路装置、光学装置、微型电机和机械精密装置的方法 |
| US10385295B2 (en) | 2012-07-10 | 2019-08-20 | Basf Se | Compositions for anti pattern collapse treatment comprising gemini additives |
| JP6246830B2 (ja) * | 2012-12-14 | 2017-12-13 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | ５０ｎｍ以下のライン間寸法を有するパターン化材料を処理する際におけるアンチパターン崩壊を回避するための、界面活性剤及び疎水剤を含む組成物の使用 |
| WO2014095036A1 (de) | 2012-12-21 | 2014-06-26 | Merck Patent Gmbh | Fluortenside |
| EP2824511A1 (en) * | 2013-07-11 | 2015-01-14 | Basf Se | The use of surfactants having at least three short-chain perfluorinated groups in formulations for photo mask cleaning |
| US9126889B2 (en) | 2013-09-04 | 2015-09-08 | Honeywell International Inc. | Fluorosurfactants having improved biodegradability |
| WO2017009068A1 (en) | 2015-07-16 | 2017-01-19 | Basf Se | Defect reduction rinse solution containing ammonium salts of sulfoesters |
| US12084628B2 (en) | 2017-11-28 | 2024-09-10 | Basf Se | Composition comprising a primary and a secondary surfactant, for cleaning or rinsing a product |
| CN112135899B (zh) * | 2018-05-25 | 2022-10-25 | 巴斯夫欧洲公司 | 包含溶剂混合物的组合物用于处理图案化材料时避免图案坍塌的用途 |
| US11094527B2 (en) | 2018-10-10 | 2021-08-17 | International Business Machines Corporation | Wet clean solutions to prevent pattern collapse |
| CN113574460A (zh) * | 2019-04-16 | 2021-10-29 | 巴斯夫欧洲公司 | 用于在处理具有50nm或更小的线距尺寸的图案化材料时避免图案塌陷的包含硼型添加剂的组合物 |
| JPWO2023002869A1 (enExample) * | 2021-07-21 | 2023-01-26 | ||
| CN116120998B (zh) * | 2023-04-17 | 2023-06-16 | 甘肃华隆芯材料科技有限公司 | 一种冲洗组合物及其光刻胶图案形成方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU396664A1 (ru) * | 1971-01-25 | 1973-08-29 | Органический проявитель для позитивных фоторезистов | |
| DE69733469T2 (de) * | 1996-03-07 | 2006-03-23 | Sumitomo Bakelite Co. Ltd. | Photoresist zusammensetzungen mit polycyclischen polymeren mit säurelabilen gruppen am ende |
| US7129199B2 (en) * | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
| JP3835521B2 (ja) | 2000-11-14 | 2006-10-18 | 信越化学工業株式会社 | レジスト表面処理剤組成物 |
| JP3553904B2 (ja) * | 2001-04-11 | 2004-08-11 | 日本電信電話株式会社 | 超臨界乾燥方法 |
| US6890452B2 (en) | 2002-11-08 | 2005-05-10 | 3M Innovative Properties Company | Fluorinated surfactants for aqueous acid etch solutions |
| EP1553454A2 (en) * | 2003-12-22 | 2005-07-13 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
| US7063931B2 (en) | 2004-01-08 | 2006-06-20 | International Business Machines Corporation | Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use |
| US20050161644A1 (en) * | 2004-01-23 | 2005-07-28 | Peng Zhang | Immersion lithography fluids |
| US20080299487A1 (en) * | 2007-05-31 | 2008-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography material and lithography process |
| DE102006031262A1 (de) | 2006-07-04 | 2008-01-10 | Merck Patent Gmbh | Fluortenside |
| DE102006031149A1 (de) * | 2006-07-04 | 2008-01-10 | Merck Patent Gmbh | Fluortenside |
| DE102006032391A1 (de) * | 2006-07-04 | 2008-01-17 | Merck Patent Gmbh | Fluortenside |
| DE102006031151A1 (de) | 2006-07-04 | 2008-01-10 | Merck Patent Gmbh | Fluortenside |
| JP5275987B2 (ja) | 2006-08-02 | 2013-08-28 | 古河電気工業株式会社 | テルミット溶接用端子 |
| US20080280230A1 (en) | 2007-05-10 | 2008-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photolithography process including a chemical rinse |
| DE102008027930A1 (de) | 2008-06-12 | 2009-12-17 | Merck Patent Gmbh | Fluortenside |
| US9236256B2 (en) | 2011-01-25 | 2016-01-12 | Basf Se | Use of surfactants having at least three short-chain perfluorinated groups RF for manufacturing integrated circuits having patterns with line-space dimensions below 50 NM |
-
2012
- 2012-01-17 US US13/979,076 patent/US9236256B2/en active Active
- 2012-01-17 JP JP2013549914A patent/JP6118732B2/ja not_active Expired - Fee Related
- 2012-01-17 EP EP12739044.1A patent/EP2668248B1/en active Active
- 2012-01-17 RU RU2013139216/05A patent/RU2584204C2/ru not_active IP Right Cessation
- 2012-01-17 KR KR1020137019478A patent/KR102004148B1/ko active Active
- 2012-01-17 SG SG2013046990A patent/SG191738A1/en unknown
- 2012-01-17 CN CN201280006322.6A patent/CN103328610B/zh active Active
- 2012-01-17 WO PCT/IB2012/050218 patent/WO2012101545A1/en not_active Ceased
- 2012-01-17 MY MYPI2013002423A patent/MY161218A/en unknown
-
2013
- 2013-06-20 IL IL227075A patent/IL227075A/en active IP Right Grant
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