JP2014508318A5 - - Google Patents
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- Publication number
- JP2014508318A5 JP2014508318A5 JP2013549914A JP2013549914A JP2014508318A5 JP 2014508318 A5 JP2014508318 A5 JP 2014508318A5 JP 2013549914 A JP2013549914 A JP 2013549914A JP 2013549914 A JP2013549914 A JP 2013549914A JP 2014508318 A5 JP2014508318 A5 JP 2014508318A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- surfactant
- photoresist layer
- patterned
- atom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004094 surface-active agent Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 5
- 230000003068 static effect Effects 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims 9
- 238000000034 method Methods 0.000 claims 8
- 238000007654 immersion Methods 0.000 claims 4
- 239000000463 material Substances 0.000 claims 4
- 125000001165 hydrophobic group Chemical group 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 230000007547 defect Effects 0.000 claims 2
- 239000007788 liquid Substances 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims 2
- 125000004437 phosphorous atom Chemical group 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910052717 sulfur Inorganic materials 0.000 claims 2
- 125000004434 sulfur atom Chemical group 0.000 claims 2
- 125000000129 anionic group Chemical group 0.000 claims 1
- 239000007864 aqueous solution Substances 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- 125000002091 cationic group Chemical group 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 125000006340 pentafluoro ethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 claims 1
- -1 pentafluorosulfanyl Chemical group 0.000 claims 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims 1
- 239000007983 Tris buffer Substances 0.000 description 2
- QUVOIYPIGVXRFH-UHFFFAOYSA-N 1,1,1,2,2,3,3,5,5,6,6,7,7,7-tetradecafluoro-4-(1,1,2,2,3,3,3-heptafluoropropyl)heptane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)F QUVOIYPIGVXRFH-UHFFFAOYSA-N 0.000 description 1
- ADXNCAXPFSPTFP-UHFFFAOYSA-N CS(=O)(=O)O.FC(C(F)(F)F)(F)[Na] Chemical compound CS(=O)(=O)O.FC(C(F)(F)F)(F)[Na] ADXNCAXPFSPTFP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- SDPVLFJCGHYSNS-UHFFFAOYSA-N [Na].CS(=O)(=O)NC(C(C(F)(F)F)(F)F)(F)F Chemical compound [Na].CS(=O)(=O)NC(C(C(F)(F)F)(F)F)(F)F SDPVLFJCGHYSNS-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161435820P | 2011-01-25 | 2011-01-25 | |
| US61/435,820 | 2011-01-25 | ||
| PCT/IB2012/050218 WO2012101545A1 (en) | 2011-01-25 | 2012-01-17 | Use of surfactants having at least three short-chain perfluorinated groups for manufacturing integrated circuits having patterns with line-space dimensions below 50nm |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014508318A JP2014508318A (ja) | 2014-04-03 |
| JP2014508318A5 true JP2014508318A5 (enExample) | 2016-03-17 |
| JP6118732B2 JP6118732B2 (ja) | 2017-04-19 |
Family
ID=46580262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013549914A Expired - Fee Related JP6118732B2 (ja) | 2011-01-25 | 2012-01-17 | 線間間隔が５０ｎｍ未満であるパターンを有する集積回路を製造するための３個以上の短鎖全フッ素化基Ｒｆを有する界面活性剤の使用方法。 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US9236256B2 (enExample) |
| EP (1) | EP2668248B1 (enExample) |
| JP (1) | JP6118732B2 (enExample) |
| KR (1) | KR102004148B1 (enExample) |
| CN (1) | CN103328610B (enExample) |
| IL (1) | IL227075A (enExample) |
| MY (1) | MY161218A (enExample) |
| RU (1) | RU2584204C2 (enExample) |
| SG (1) | SG191738A1 (enExample) |
| WO (1) | WO2012101545A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MY161218A (en) | 2011-01-25 | 2017-04-14 | Basf Se | Use of surfactants having at least three short-chain perfluorinated groups rf for manufacturing integrated circuits having patterns with line-space dimensions below 50nm |
| CN103430102B (zh) | 2011-03-18 | 2017-02-08 | 巴斯夫欧洲公司 | 制造具有带50nm及更小行间距尺寸的图案化材料层的集成电路装置、光学装置、微型电机和机械精密装置的方法 |
| CN104428716B (zh) | 2012-07-10 | 2019-06-14 | 巴斯夫欧洲公司 | 用于抗图案崩坏处理的包含双子型添加剂的组合物 |
| MY181266A (en) | 2012-12-14 | 2020-12-21 | Basf Se | Use of compositions comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below |
| WO2014095036A1 (de) | 2012-12-21 | 2014-06-26 | Merck Patent Gmbh | Fluortenside |
| EP2824511A1 (en) | 2013-07-11 | 2015-01-14 | Basf Se | The use of surfactants having at least three short-chain perfluorinated groups in formulations for photo mask cleaning |
| US9126889B2 (en) | 2013-09-04 | 2015-09-08 | Honeywell International Inc. | Fluorosurfactants having improved biodegradability |
| WO2017009068A1 (en) | 2015-07-16 | 2017-01-19 | Basf Se | Defect reduction rinse solution containing ammonium salts of sulfoesters |
| CN111386332B (zh) * | 2017-11-28 | 2025-05-23 | 巴斯夫欧洲公司 | 用于清洁或清洗产品的包含一级和二级表面活性剂的组合物 |
| KR20210015801A (ko) * | 2018-05-25 | 2021-02-10 | 바스프 에스이 | 50 nm 이하의 라인 간격 치수를 갖는 패턴화 재료를 처리할 때 패턴 붕괴를 피하기 위한 용매 혼합물을 포함하는 조성물의 용도 |
| US11094527B2 (en) | 2018-10-10 | 2021-08-17 | International Business Machines Corporation | Wet clean solutions to prevent pattern collapse |
| EP3956729A1 (en) * | 2019-04-16 | 2022-02-23 | Basf Se | Composition for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below comprising a boron-type additive |
| KR102878549B1 (ko) * | 2021-07-21 | 2025-10-30 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성 수지 조성물의 제조 방법, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 전자 디바이스의 제조 방법, 수지, 및 수지의 제조 방법 |
| CN116120998B (zh) * | 2023-04-17 | 2023-06-16 | 甘肃华隆芯材料科技有限公司 | 一种冲洗组合物及其光刻胶图案形成方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU396664A1 (ru) * | 1971-01-25 | 1973-08-29 | Органический проявитель для позитивных фоторезистов | |
| WO1997033198A1 (en) * | 1996-03-07 | 1997-09-12 | The B.F. Goodrich Company | Photoresist compositions comprising polycyclic polymers with acid labile pendant groups |
| US7129199B2 (en) * | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
| JP3835521B2 (ja) | 2000-11-14 | 2006-10-18 | 信越化学工業株式会社 | レジスト表面処理剤組成物 |
| JP3553904B2 (ja) * | 2001-04-11 | 2004-08-11 | 日本電信電話株式会社 | 超臨界乾燥方法 |
| US6890452B2 (en) * | 2002-11-08 | 2005-05-10 | 3M Innovative Properties Company | Fluorinated surfactants for aqueous acid etch solutions |
| EP1553454A2 (en) * | 2003-12-22 | 2005-07-13 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
| US7063931B2 (en) * | 2004-01-08 | 2006-06-20 | International Business Machines Corporation | Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use |
| US20050161644A1 (en) * | 2004-01-23 | 2005-07-28 | Peng Zhang | Immersion lithography fluids |
| US20080299487A1 (en) | 2007-05-31 | 2008-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography material and lithography process |
| DE102006031149A1 (de) * | 2006-07-04 | 2008-01-10 | Merck Patent Gmbh | Fluortenside |
| DE102006031151A1 (de) | 2006-07-04 | 2008-01-10 | Merck Patent Gmbh | Fluortenside |
| DE102006031262A1 (de) * | 2006-07-04 | 2008-01-10 | Merck Patent Gmbh | Fluortenside |
| DE102006032391A1 (de) * | 2006-07-04 | 2008-01-17 | Merck Patent Gmbh | Fluortenside |
| CN101505907A (zh) | 2006-08-02 | 2009-08-12 | 古河电气工业株式会社 | 铝热焊焊片 |
| US20080280230A1 (en) | 2007-05-10 | 2008-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photolithography process including a chemical rinse |
| DE102008027930A1 (de) | 2008-06-12 | 2009-12-17 | Merck Patent Gmbh | Fluortenside |
| MY161218A (en) | 2011-01-25 | 2017-04-14 | Basf Se | Use of surfactants having at least three short-chain perfluorinated groups rf for manufacturing integrated circuits having patterns with line-space dimensions below 50nm |
-
2012
- 2012-01-17 MY MYPI2013002423A patent/MY161218A/en unknown
- 2012-01-17 RU RU2013139216/05A patent/RU2584204C2/ru not_active IP Right Cessation
- 2012-01-17 CN CN201280006322.6A patent/CN103328610B/zh active Active
- 2012-01-17 SG SG2013046990A patent/SG191738A1/en unknown
- 2012-01-17 KR KR1020137019478A patent/KR102004148B1/ko active Active
- 2012-01-17 WO PCT/IB2012/050218 patent/WO2012101545A1/en not_active Ceased
- 2012-01-17 JP JP2013549914A patent/JP6118732B2/ja not_active Expired - Fee Related
- 2012-01-17 EP EP12739044.1A patent/EP2668248B1/en active Active
- 2012-01-17 US US13/979,076 patent/US9236256B2/en active Active
-
2013
- 2013-06-20 IL IL227075A patent/IL227075A/en active IP Right Grant
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