JP2014501045A - 集積回路の水素パッシベーション - Google Patents

集積回路の水素パッシベーション Download PDF

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JP2014501045A
JP2014501045A JP2013543143A JP2013543143A JP2014501045A JP 2014501045 A JP2014501045 A JP 2014501045A JP 2013543143 A JP2013543143 A JP 2013543143A JP 2013543143 A JP2013543143 A JP 2013543143A JP 2014501045 A JP2014501045 A JP 2014501045A
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integrated circuit
layer
hydrogen
passivation
transistor
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Pending
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JP2013543143A
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Japanese (ja)
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JP2014501045A5 (enExample
Inventor
バハル バシム グル
アール サマーフェルト スコット
エス モイーズ テッド
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日本テキサス・インスツルメンツ株式会社
テキサス インスツルメンツ インコーポレイテッド
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Publication of JP2014501045A publication Critical patent/JP2014501045A/ja
Publication of JP2014501045A5 publication Critical patent/JP2014501045A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76832—Multiple layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP2013543143A 2010-12-09 2010-12-09 集積回路の水素パッシベーション Pending JP2014501045A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2010/059722 WO2012078163A1 (en) 2010-12-09 2010-12-09 Hydrogen passivation of integrated circuits

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016196116A Division JP6351079B2 (ja) 2016-10-04 2016-10-04 集積回路の水素パッシベーション

Publications (2)

Publication Number Publication Date
JP2014501045A true JP2014501045A (ja) 2014-01-16
JP2014501045A5 JP2014501045A5 (enExample) 2014-02-27

Family

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Family Applications (1)

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JP2013543143A Pending JP2014501045A (ja) 2010-12-09 2010-12-09 集積回路の水素パッシベーション

Country Status (3)

Country Link
JP (1) JP2014501045A (enExample)
CN (1) CN103262223A (enExample)
WO (1) WO2012078163A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013218494B4 (de) * 2013-09-16 2021-06-02 Infineon Technologies Ag Halbleiterbauelement mit einer Passivierungsschicht und Herstellungsverfahren
TWI548000B (zh) * 2014-12-22 2016-09-01 力晶科技股份有限公司 半導體元件及其製作方法
JP6468886B2 (ja) * 2015-03-02 2019-02-13 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
KR101914039B1 (ko) * 2017-02-03 2018-11-01 주식회사 에이치피에스피 반도체 열처리방법
TWI858076B (zh) * 2019-06-17 2024-10-11 美商應用材料股份有限公司 含重氫之膜

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0845926A (ja) * 1994-07-26 1996-02-16 Sony Corp 半導体装置およびその製造方法
JP2002016249A (ja) * 2000-06-30 2002-01-18 Toshiba Corp 半導体装置及びその製造方法
JP2003224206A (ja) * 2002-01-29 2003-08-08 Fujitsu Ltd 半導体装置及びその製造方法
JP2008210869A (ja) * 2007-02-23 2008-09-11 Canon Inc 光電変換装置の製造方法
JP2009289919A (ja) * 2008-05-28 2009-12-10 Fujitsu Microelectronics Ltd 半導体装置とその製造方法
US20100022961A1 (en) * 2006-06-23 2010-01-28 Jentec , Inc. Superthin wound dressing having folded release sheet
JP2010093064A (ja) * 2008-10-08 2010-04-22 Panasonic Corp 半導体装置及びその製造方法
US20100224961A1 (en) * 2009-03-06 2010-09-09 Texas Instruments Incorporated Passivation of integrated circuits containing ferroelectric capacitors and hydrogen barriers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6781184B2 (en) * 2001-11-29 2004-08-24 Symetrix Corporation Barrier layers for protecting metal oxides from hydrogen degradation
JP2007150025A (ja) * 2005-11-29 2007-06-14 Seiko Epson Corp 強誘電体メモリの製造方法
US7985603B2 (en) * 2008-02-04 2011-07-26 Texas Instruments Incorporated Ferroelectric capacitor manufacturing process

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0845926A (ja) * 1994-07-26 1996-02-16 Sony Corp 半導体装置およびその製造方法
JP2002016249A (ja) * 2000-06-30 2002-01-18 Toshiba Corp 半導体装置及びその製造方法
JP2003224206A (ja) * 2002-01-29 2003-08-08 Fujitsu Ltd 半導体装置及びその製造方法
US20100022961A1 (en) * 2006-06-23 2010-01-28 Jentec , Inc. Superthin wound dressing having folded release sheet
JP2008210869A (ja) * 2007-02-23 2008-09-11 Canon Inc 光電変換装置の製造方法
JP2009289919A (ja) * 2008-05-28 2009-12-10 Fujitsu Microelectronics Ltd 半導体装置とその製造方法
JP2010093064A (ja) * 2008-10-08 2010-04-22 Panasonic Corp 半導体装置及びその製造方法
US20100224961A1 (en) * 2009-03-06 2010-09-09 Texas Instruments Incorporated Passivation of integrated circuits containing ferroelectric capacitors and hydrogen barriers

Also Published As

Publication number Publication date
WO2012078163A1 (en) 2012-06-14
CN103262223A (zh) 2013-08-21

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