JP2014501045A - 集積回路の水素パッシベーション - Google Patents
集積回路の水素パッシベーション Download PDFInfo
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- JP2014501045A JP2014501045A JP2013543143A JP2013543143A JP2014501045A JP 2014501045 A JP2014501045 A JP 2014501045A JP 2013543143 A JP2013543143 A JP 2013543143A JP 2013543143 A JP2013543143 A JP 2013543143A JP 2014501045 A JP2014501045 A JP 2014501045A
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- integrated circuit
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- hydrogen
- passivation
- transistor
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- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 101
- 239000001257 hydrogen Substances 0.000 title claims abstract description 100
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 238000002161 passivation Methods 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 claims abstract description 59
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims abstract description 32
- 229910052805 deuterium Inorganic materials 0.000 claims abstract description 32
- 230000008569 process Effects 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 23
- 229910004294 SiNxHy Inorganic materials 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 11
- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- 206010030924 Optic ischaemic neuropathy Diseases 0.000 claims 2
- 239000010408 film Substances 0.000 description 43
- 230000004888 barrier function Effects 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 150000002431 hydrogen Chemical class 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- -1 silicon ions Chemical class 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910017107 AlOx Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76832—Multiple layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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Abstract
パッシベーショントラッピング層の下にある水素又は重水素放出層を備えた集積回路。水素又は重水素放出層を有する集積回路を形成するための方法。パッシベーショントラッピング層を有する集積回路を形成するための方法。
Description
Claims (17)
- 集積回路であって、
基板、
前記基板に結合されるトランジスタ、
前記基板に結合されるプレメタル誘電体層、及び
前記プレメタル誘電体層の上にあるパッシベーショントラッピング層、
を含む、集積回路。 - 請求項1に記載の集積回路であって、前記基板と前記トランジスタのゲート誘電体との間のインタフェースがパッシベートされ、更に、前記パッシベーショントラッピング層が、AlO、AION、SiNx、及びSiNxHyから成るグループから選択されるフィルムである、集積回路。
- 請求項1に記載の集積回路であって、前記パッシベーショントラッピング層の下に位置する水素放出層を更に含む、集積回路。
- 請求項3に記載の集積回路であって、前記水素放出層がN−H結合より多くのSi‐H結合を備えたSiNxHyフィルムである、集積回路。
- 請求項1に記載の集積回路であって、前記パッシベーション層の下に位置する重水素放出層を更に含み、前記重水素放出層がN−D結合より多いSi−D結合を備えたSiNxDyフィルムである、集積回路。
- 請求項3に記載の集積回路であって、前記水素放出層が、前記プレメタル誘電体層の下に位置する、集積回路。
- 請求項1に記載の集積回路であって、前記基板と前記トランジスタのゲート誘電体との間のインタフェースがパッシベートされ、更にキャッピング層が、前記パッシベーショントラッピング層の上に位置する、集積回路。
- 請求項1に記載の集積回路であって、前記基板と前記トランジスタのゲート誘電体との間のインタフェースがパッシベートされ、更に前記パッシベーショントラッピング層が、前記PMD層に形成されるコンタクトの上に位置する、集積回路。
- 集積回路であって、
基板、
前記基板に結合されるトランジスタであって、前記基板と前記トランジスタのゲート誘電体との間のインタフェースがパッシベートされる、前記トランジスタ、
前記トランジスタ上にあるパッシベーショントラッピング層、及び
前記パッシベーショントラッピング層に対して上にあるプレメタル誘電体層、
を含む、集積回路。 - 集積回路を形成するプロセスであって、
トランジスタ及び前記トランジスタの上にあるプレメタル誘電体層を有する部分的に処理された集積回路を提供する工程、
前記部分的に処理された集積回路をパッシベートする工程、及び
前記パッシベートする工程の後、前記プレメタル誘電体層の上にパッシベーショントラッピング層を堆積する工程、
を含む、プロセス。 - 請求項10に記載のプロセスであって、前記パッシベートする工程が、水素及び重水素のうち少なくとも1つを含む高密度プラズマプロセスである、プロセス。
- 請求項10に記載のプロセスであって、前記パッシベートする工程が、水素放出層を堆積する工程を含む、プロセス。
- 請求項12に記載のプロセスであって、前記水素放出層が、N−H結合より多いSi‐H結合を備えたSiNxHyフィルムである、プロセス。
- 請求項12に記載のプロセスであって、前記パッシベートする工程が、重水素放出層を堆積する工程を含み、前記重水素放出層がN−D結合より多いSi−D結合を備えたSiNxDyフィルムである、プロセス。
- 請求項10に記載のプロセスであって、前記パッシベートする工程が、水素又は重水素のうち少なくとも1つを含む雰囲気中で前記集積回路をアニールする工程を含む、プロセス。
- 請求項10に記載のプロセスであって、前記パッシベーショントラッピング層が、AlO、AION、SiNx、及びSiNxHyから成る群から選択されるフィルムを含む、プロセス。
- 集積回路を形成するプロセスであって、
トランジスタを含む部分的に処理された集積回路を提供する工程、
前記部分的に処理された集積回路をパッシベートする工程、
前記パッシベートする工程の後、前記トランジスタの上にパッシベーショントラッピング層を堆積する工程、及び
前記パッシベーショントラッピング層の上にプレメタル誘電体層を形成する工程、
を含む、プロセス。
Applications Claiming Priority (1)
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PCT/US2010/059722 WO2012078163A1 (en) | 2010-12-09 | 2010-12-09 | Hydrogen passivation of integrated circuits |
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JP2016196116A Division JP6351079B2 (ja) | 2016-10-04 | 2016-10-04 | 集積回路の水素パッシベーション |
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JP2014501045A true JP2014501045A (ja) | 2014-01-16 |
JP2014501045A5 JP2014501045A5 (ja) | 2014-02-27 |
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DE102013218494B4 (de) * | 2013-09-16 | 2021-06-02 | Infineon Technologies Ag | Halbleiterbauelement mit einer Passivierungsschicht und Herstellungsverfahren |
TWI548000B (zh) * | 2014-12-22 | 2016-09-01 | 力晶科技股份有限公司 | 半導體元件及其製作方法 |
JP6468886B2 (ja) * | 2015-03-02 | 2019-02-13 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
KR101914039B1 (ko) * | 2017-02-03 | 2018-11-01 | 주식회사 에이치피에스피 | 반도체 열처리방법 |
TW202104644A (zh) * | 2019-06-17 | 2021-02-01 | 美商應用材料股份有限公司 | 含重氫之膜 |
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2010
- 2010-12-09 CN CN2010800706081A patent/CN103262223A/zh active Pending
- 2010-12-09 WO PCT/US2010/059722 patent/WO2012078163A1/en active Application Filing
- 2010-12-09 JP JP2013543143A patent/JP2014501045A/ja active Pending
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JP2009289919A (ja) * | 2008-05-28 | 2009-12-10 | Fujitsu Microelectronics Ltd | 半導体装置とその製造方法 |
JP2010093064A (ja) * | 2008-10-08 | 2010-04-22 | Panasonic Corp | 半導体装置及びその製造方法 |
US20100224961A1 (en) * | 2009-03-06 | 2010-09-09 | Texas Instruments Incorporated | Passivation of integrated circuits containing ferroelectric capacitors and hydrogen barriers |
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CN103262223A (zh) | 2013-08-21 |
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