JP2006518106A - 互いに重ねて堆積させた金属層の積層体中に形成されたゲート電極を含むmosトランジスタを備える半導体デバイスの製造方法 - Google Patents
互いに重ねて堆積させた金属層の積層体中に形成されたゲート電極を含むmosトランジスタを備える半導体デバイスの製造方法 Download PDFInfo
- Publication number
- JP2006518106A JP2006518106A JP2006502522A JP2006502522A JP2006518106A JP 2006518106 A JP2006518106 A JP 2006518106A JP 2006502522 A JP2006502522 A JP 2006502522A JP 2006502522 A JP2006502522 A JP 2006502522A JP 2006518106 A JP2006518106 A JP 2006518106A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal
- nitrogen
- metal layer
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 114
- 239000002184 metal Substances 0.000 title claims abstract description 114
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 113
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 61
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 238000002955 isolation Methods 0.000 claims abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 14
- 239000010941 cobalt Substances 0.000 claims description 8
- 229910017052 cobalt Inorganic materials 0.000 claims description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 239000011343 solid material Substances 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- -1 titanium Chemical class 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/82345—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
- H01L29/4958—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo with a multiple layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
Abstract
Description
Claims (5)
- 互いに重ねて堆積させた金属層の積層体として形成したゲート電極を含むMOSトランジスタを備える半導体デバイスの製造方法において、シリコンの複数の活性領域および前記活性領域を互いに絶縁するフィールド分離領域が接するシリコン本体表面上の前記複数の活性領域の位置にゲート誘電体層を形成し、その後、第1の金属層を堆積させ、前記複数の活性領域の一部分の位置に窒素を導入し、その後、前記第1の金属層上に第2の金属層を堆積させ、続いて、重なり合った金属層の積層体中に前記ゲート電極をエッチングする方法であって、前記第1の金属層中に窒素を局所的に導入する前に、この層上に窒素透過性金属の第3の補助層を形成することを特徴とする方法。
- 前記第1の金属層中に窒素を局所的に導入した後、前記補助層上に前記第2の金属層を堆積させることを特徴とする、請求項1に記載の方法。
- 前記補助層上に局所的に設けられた過剰量の窒素を含む固体物質からの拡散によって、前記第1の金属層中に前記窒素を導入することを特徴とする、請求項1または2に記載の方法。
- 前記補助層上に過剰量の窒素を含む固体物質層としてTiNx層(x>1)を局所的に設け、その後、熱処理を実施して、窒素を前記補助層を通して前記第1の金属層中に拡散させることを特徴とする、請求項3に記載の方法。
- タンタル層またはモリブデン層を前記第1の金属層として堆積させ、その上にコバルト層またはニッケル層を前記補助層として堆積させることを特徴とする、前記請求項のいずれかに記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03100216 | 2003-02-03 | ||
PCT/IB2004/050027 WO2004070833A1 (en) | 2003-02-03 | 2004-01-15 | Method of manufacturing a semiconductor device with mos transistors comprising gate electrodes formed in a packet of metal layers deposited upon one another |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006518106A true JP2006518106A (ja) | 2006-08-03 |
Family
ID=32842800
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006502522A Pending JP2006518106A (ja) | 2003-02-03 | 2004-01-15 | 互いに重ねて堆積させた金属層の積層体中に形成されたゲート電極を含むmosトランジスタを備える半導体デバイスの製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7326631B2 (ja) |
EP (1) | EP1593154B1 (ja) |
JP (1) | JP2006518106A (ja) |
KR (1) | KR20050094474A (ja) |
AT (1) | ATE517431T1 (ja) |
TW (1) | TW200503172A (ja) |
WO (1) | WO2004070833A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007504671A (ja) * | 2003-09-04 | 2007-03-01 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | high−kゲート誘電体と関連の構造を有するCMOSゲートを形成するための、異なる仕事関数を有する金属を統合する方法 |
JP2008091501A (ja) * | 2006-09-29 | 2008-04-17 | Fujitsu Ltd | 半導体集積回路装置及びその製造方法 |
WO2012086102A1 (ja) * | 2010-12-24 | 2012-06-28 | パナソニック株式会社 | 半導体装置及びその製造方法 |
JP2016219818A (ja) * | 2010-12-28 | 2016-12-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7291527B2 (en) | 2005-09-07 | 2007-11-06 | Texas Instruments Incorporated | Work function control of metals |
JP2007157739A (ja) * | 2005-11-30 | 2007-06-21 | Fujitsu Ltd | Cmos半導体素子とその製造方法 |
WO2007069299A1 (ja) * | 2005-12-13 | 2007-06-21 | Fujitsu Limited | 半導体装置の製造方法 |
JP4828982B2 (ja) * | 2006-03-28 | 2011-11-30 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
KR100775965B1 (ko) | 2006-08-17 | 2007-11-15 | 삼성전자주식회사 | 모스 트랜지스터 및 그 제조 방법 |
US8034678B2 (en) * | 2008-01-17 | 2011-10-11 | Kabushiki Kaisha Toshiba | Complementary metal oxide semiconductor device fabrication method |
JP2011517082A (ja) * | 2008-04-02 | 2011-05-26 | エヌエックスピー ビー ヴィ | 半導体デバイスの製造方法および半導体デバイス |
JP5769160B2 (ja) * | 2008-10-30 | 2015-08-26 | 国立大学法人東北大学 | コンタクト形成方法、半導体装置の製造方法、および半導体装置 |
CN103854982B (zh) * | 2012-11-30 | 2016-09-28 | 中国科学院微电子研究所 | 半导体器件的制造方法 |
KR102262887B1 (ko) | 2014-07-21 | 2021-06-08 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US9831301B1 (en) * | 2016-09-19 | 2017-11-28 | International Business Machines Corporation | Metal resistor structures with nitrogen content |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6213035A (ja) * | 1985-07-11 | 1987-01-21 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2000031296A (ja) * | 1998-06-30 | 2000-01-28 | Motorola Inc | Cmos半導体素子およびその形成方法 |
JP2001203276A (ja) * | 2000-01-21 | 2001-07-27 | Nec Corp | 半導体装置およびその製造方法 |
JP2001217323A (ja) * | 1999-12-16 | 2001-08-10 | Texas Instr Inc <Ti> | Cmosデバイス二重金属ゲート構造作製方法 |
JP2002050756A (ja) * | 2000-08-02 | 2002-02-15 | Matsushita Electric Ind Co Ltd | 電極構造体の形成方法及び半導体装置の製造方法 |
JP2002198441A (ja) * | 2000-11-16 | 2002-07-12 | Hynix Semiconductor Inc | 半導体素子のデュアル金属ゲート形成方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3003285A1 (de) * | 1980-01-30 | 1981-08-06 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen niederohmiger, einkristalliner metall- oder legierungsschichten auf substraten |
US5668040A (en) * | 1995-03-20 | 1997-09-16 | Lg Semicon Co., Ltd. | Method for forming a semiconductor device electrode which also serves as a diffusion barrier |
US6162713A (en) * | 1999-06-17 | 2000-12-19 | United Microelectronics Corp. | Method for fabricating semiconductor structures having metal silicides |
US6509254B1 (en) * | 2000-01-20 | 2003-01-21 | Matsushita Electric Industrial Co., Ltd. | Method of forming electrode structure and method of fabricating semiconductor device |
US6451690B1 (en) * | 2000-03-13 | 2002-09-17 | Matsushita Electronics Corporation | Method of forming electrode structure and method of fabricating semiconductor device |
US6794234B2 (en) * | 2002-01-30 | 2004-09-21 | The Regents Of The University Of California | Dual work function CMOS gate technology based on metal interdiffusion |
US6872613B1 (en) * | 2003-09-04 | 2005-03-29 | Advanced Micro Devices, Inc. | Method for integrating metals having different work functions to form CMOS gates having a high-k gate dielectric and related structure |
-
2004
- 2004-01-15 JP JP2006502522A patent/JP2006518106A/ja active Pending
- 2004-01-15 EP EP04702397A patent/EP1593154B1/en not_active Expired - Lifetime
- 2004-01-15 WO PCT/IB2004/050027 patent/WO2004070833A1/en active Application Filing
- 2004-01-15 KR KR1020057014246A patent/KR20050094474A/ko not_active Application Discontinuation
- 2004-01-15 AT AT04702397T patent/ATE517431T1/de not_active IP Right Cessation
- 2004-01-15 US US10/544,413 patent/US7326631B2/en not_active Expired - Lifetime
- 2004-01-30 TW TW093102195A patent/TW200503172A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6213035A (ja) * | 1985-07-11 | 1987-01-21 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2000031296A (ja) * | 1998-06-30 | 2000-01-28 | Motorola Inc | Cmos半導体素子およびその形成方法 |
JP2001217323A (ja) * | 1999-12-16 | 2001-08-10 | Texas Instr Inc <Ti> | Cmosデバイス二重金属ゲート構造作製方法 |
JP2001203276A (ja) * | 2000-01-21 | 2001-07-27 | Nec Corp | 半導体装置およびその製造方法 |
JP2002050756A (ja) * | 2000-08-02 | 2002-02-15 | Matsushita Electric Ind Co Ltd | 電極構造体の形成方法及び半導体装置の製造方法 |
JP2002198441A (ja) * | 2000-11-16 | 2002-07-12 | Hynix Semiconductor Inc | 半導体素子のデュアル金属ゲート形成方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007504671A (ja) * | 2003-09-04 | 2007-03-01 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | high−kゲート誘電体と関連の構造を有するCMOSゲートを形成するための、異なる仕事関数を有する金属を統合する方法 |
JP2008091501A (ja) * | 2006-09-29 | 2008-04-17 | Fujitsu Ltd | 半導体集積回路装置及びその製造方法 |
WO2012086102A1 (ja) * | 2010-12-24 | 2012-06-28 | パナソニック株式会社 | 半導体装置及びその製造方法 |
JP2016219818A (ja) * | 2010-12-28 | 2016-12-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10714625B2 (en) | 2010-12-28 | 2020-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US11430896B2 (en) | 2010-12-28 | 2022-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
US20060134848A1 (en) | 2006-06-22 |
EP1593154B1 (en) | 2011-07-20 |
TW200503172A (en) | 2005-01-16 |
WO2004070833A8 (en) | 2005-08-25 |
EP1593154A1 (en) | 2005-11-09 |
US7326631B2 (en) | 2008-02-05 |
ATE517431T1 (de) | 2011-08-15 |
WO2004070833A1 (en) | 2004-08-19 |
KR20050094474A (ko) | 2005-09-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3906020B2 (ja) | 半導体装置及びその製造方法 | |
US7042033B2 (en) | ULSI MOS with high dielectric constant gate insulator | |
JP2005123625A (ja) | シリサイド化された電極を有する半導体装置の製造方法 | |
JP2006518106A (ja) | 互いに重ねて堆積させた金属層の積層体中に形成されたゲート電極を含むmosトランジスタを備える半導体デバイスの製造方法 | |
JP2007123364A (ja) | 半導体装置およびその製造方法 | |
JP2007250734A (ja) | シリコン酸化膜形成法、容量素子の製法及び半導体装置の製法 | |
KR20030044394A (ko) | 듀얼 게이트절연막을 구비한 반도체소자의 제조 방법 | |
US6835622B2 (en) | Gate electrode doping method for forming semiconductor integrated circuit microelectronic fabrication with varying effective gate dielectric layer thicknesses | |
JP2006237425A (ja) | 半導体装置の製造方法 | |
JP3770250B2 (ja) | 半導体装置の製造方法 | |
US7811892B2 (en) | Multi-step annealing process | |
US7709911B2 (en) | Semiconductor device having silicide transistors and non-silicide transistors formed on the same substrate and method for fabricating the same | |
KR100460069B1 (ko) | 반도체소자의 게이트전극 형성방법 | |
JP5177980B2 (ja) | 半導体装置およびその製造方法 | |
US7186631B2 (en) | Method for manufacturing a semiconductor device | |
KR100806136B1 (ko) | 금속 게이트전극을 구비한 반도체소자의 제조 방법 | |
JPH11186548A (ja) | 半導体装置及びその製造方法 | |
KR20030050595A (ko) | 듀얼 게이트산화막을 구비한 반도체장치의 제조 방법 | |
US7537995B2 (en) | Method for fabricating a dual poly gate in semiconductor device | |
KR20030050680A (ko) | 듀얼 게이트산화막을 구비한 반도체장치의 제조 방법 | |
JP2005222977A (ja) | 半導体装置の製造方法 | |
JP2007294945A (ja) | 半導体装置の製造方法 | |
KR20060010949A (ko) | 반도체 소자 제조방법 | |
JP2010165823A (ja) | 半導体装置とその製造方法 | |
JPH10112544A (ja) | Misトランジスタの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070115 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20090121 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101217 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101224 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20110628 |