CN103262223A - 集成电路的氢钝化 - Google Patents

集成电路的氢钝化 Download PDF

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Publication number
CN103262223A
CN103262223A CN2010800706081A CN201080070608A CN103262223A CN 103262223 A CN103262223 A CN 103262223A CN 2010800706081 A CN2010800706081 A CN 2010800706081A CN 201080070608 A CN201080070608 A CN 201080070608A CN 103262223 A CN103262223 A CN 103262223A
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CN
China
Prior art keywords
passivation
layer
integrated circuit
hydrogen
deuterium
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Pending
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CN2010800706081A
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English (en)
Chinese (zh)
Inventor
G·B·巴瑟姆
S·R·萨默菲尔特
T·S·莫伊兹
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Texas Instruments Inc
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Texas Instruments Inc
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Publication of CN103262223A publication Critical patent/CN103262223A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76832—Multiple layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
CN2010800706081A 2010-12-09 2010-12-09 集成电路的氢钝化 Pending CN103262223A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2010/059722 WO2012078163A1 (en) 2010-12-09 2010-12-09 Hydrogen passivation of integrated circuits

Publications (1)

Publication Number Publication Date
CN103262223A true CN103262223A (zh) 2013-08-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800706081A Pending CN103262223A (zh) 2010-12-09 2010-12-09 集成电路的氢钝化

Country Status (3)

Country Link
JP (1) JP2014501045A (enExample)
CN (1) CN103262223A (enExample)
WO (1) WO2012078163A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465537A (zh) * 2013-09-16 2015-03-25 英飞凌科技股份有限公司 具有钝化层的半导体元件以及制造方法
CN105826267A (zh) * 2014-12-22 2016-08-03 力晶科技股份有限公司 半导体元件及其制作方法
CN105938799A (zh) * 2015-03-02 2016-09-14 瑞萨电子株式会社 半导体器件的制造方法和半导体器件
CN108389789A (zh) * 2017-02-03 2018-08-10 株式会社Hpsp 半导体热处理方法
CN114040992A (zh) * 2019-06-17 2022-02-11 应用材料公司 含重氢的膜

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016249A (ja) * 2000-06-30 2002-01-18 Toshiba Corp 半導体装置及びその製造方法
JP2003224206A (ja) * 2002-01-29 2003-08-08 Fujitsu Ltd 半導体装置及びその製造方法
JP2008210869A (ja) * 2007-02-23 2008-09-11 Canon Inc 光電変換装置の製造方法
JP2009289919A (ja) * 2008-05-28 2009-12-10 Fujitsu Microelectronics Ltd 半導体装置とその製造方法
JP2010093064A (ja) * 2008-10-08 2010-04-22 Panasonic Corp 半導体装置及びその製造方法
US20100224961A1 (en) * 2009-03-06 2010-09-09 Texas Instruments Incorporated Passivation of integrated circuits containing ferroelectric capacitors and hydrogen barriers

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0845926A (ja) * 1994-07-26 1996-02-16 Sony Corp 半導体装置およびその製造方法
US6781184B2 (en) * 2001-11-29 2004-08-24 Symetrix Corporation Barrier layers for protecting metal oxides from hydrogen degradation
JP2007150025A (ja) * 2005-11-29 2007-06-14 Seiko Epson Corp 強誘電体メモリの製造方法
EP2032105A2 (en) * 2006-06-23 2009-03-11 Jentec Inc. Superthin wound dressing having folded release sheet
US7985603B2 (en) * 2008-02-04 2011-07-26 Texas Instruments Incorporated Ferroelectric capacitor manufacturing process

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016249A (ja) * 2000-06-30 2002-01-18 Toshiba Corp 半導体装置及びその製造方法
JP2003224206A (ja) * 2002-01-29 2003-08-08 Fujitsu Ltd 半導体装置及びその製造方法
JP2008210869A (ja) * 2007-02-23 2008-09-11 Canon Inc 光電変換装置の製造方法
JP2009289919A (ja) * 2008-05-28 2009-12-10 Fujitsu Microelectronics Ltd 半導体装置とその製造方法
JP2010093064A (ja) * 2008-10-08 2010-04-22 Panasonic Corp 半導体装置及びその製造方法
US20100224961A1 (en) * 2009-03-06 2010-09-09 Texas Instruments Incorporated Passivation of integrated circuits containing ferroelectric capacitors and hydrogen barriers

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465537A (zh) * 2013-09-16 2015-03-25 英飞凌科技股份有限公司 具有钝化层的半导体元件以及制造方法
CN104465537B (zh) * 2013-09-16 2017-11-24 英飞凌科技股份有限公司 具有钝化层的半导体元件以及制造方法
CN105826267A (zh) * 2014-12-22 2016-08-03 力晶科技股份有限公司 半导体元件及其制作方法
CN105826267B (zh) * 2014-12-22 2018-09-21 力晶科技股份有限公司 半导体元件及其制作方法
CN105938799A (zh) * 2015-03-02 2016-09-14 瑞萨电子株式会社 半导体器件的制造方法和半导体器件
CN105938799B (zh) * 2015-03-02 2021-04-06 瑞萨电子株式会社 半导体器件的制造方法和半导体器件
CN108389789A (zh) * 2017-02-03 2018-08-10 株式会社Hpsp 半导体热处理方法
CN108389789B (zh) * 2017-02-03 2022-08-12 株式会社Hpsp 半导体热处理方法
CN114040992A (zh) * 2019-06-17 2022-02-11 应用材料公司 含重氢的膜

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JP2014501045A (ja) 2014-01-16

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