JP2014216459A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2014216459A
JP2014216459A JP2013092227A JP2013092227A JP2014216459A JP 2014216459 A JP2014216459 A JP 2014216459A JP 2013092227 A JP2013092227 A JP 2013092227A JP 2013092227 A JP2013092227 A JP 2013092227A JP 2014216459 A JP2014216459 A JP 2014216459A
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JP
Japan
Prior art keywords
groove
semiconductor element
semiconductor
semiconductor device
heat spreader
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Pending
Application number
JP2013092227A
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English (en)
Japanese (ja)
Other versions
JP2014216459A5 (enrdf_load_stackoverflow
Inventor
山本　圭
Kei Yamamoto
圭 山本
井高　志織
Shiori Idaka
志織 井高
寺井　護
Mamoru Terai
護 寺井
洋平 大本
Yohei Omoto
洋平 大本
康滋 椋木
Yasushige Kuraki
康滋 椋木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2013092227A priority Critical patent/JP2014216459A/ja
Publication of JP2014216459A publication Critical patent/JP2014216459A/ja
Publication of JP2014216459A5 publication Critical patent/JP2014216459A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2013092227A 2013-04-25 2013-04-25 半導体装置 Pending JP2014216459A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013092227A JP2014216459A (ja) 2013-04-25 2013-04-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013092227A JP2014216459A (ja) 2013-04-25 2013-04-25 半導体装置

Publications (2)

Publication Number Publication Date
JP2014216459A true JP2014216459A (ja) 2014-11-17
JP2014216459A5 JP2014216459A5 (enrdf_load_stackoverflow) 2016-01-21

Family

ID=51941961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013092227A Pending JP2014216459A (ja) 2013-04-25 2013-04-25 半導体装置

Country Status (1)

Country Link
JP (1) JP2014216459A (enrdf_load_stackoverflow)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016115704A (ja) * 2014-12-11 2016-06-23 トヨタ自動車株式会社 半導体装置
WO2017006771A1 (ja) * 2015-07-06 2017-01-12 ローム株式会社 パワーモジュールおよびインバータ装置
JP2017054878A (ja) * 2015-09-08 2017-03-16 株式会社村田製作所 半導体モジュール
JP2017073529A (ja) * 2015-10-09 2017-04-13 三菱電機株式会社 半導体装置
JP2017084921A (ja) * 2015-10-27 2017-05-18 三菱マテリアル株式会社 パワーモジュール
WO2017086248A1 (ja) * 2015-11-20 2017-05-26 三菱電機株式会社 電力用半導体装置および電力用半導体装置の製造方法
DE102017207117A1 (de) 2016-07-19 2018-01-25 Mitsubishi Electric Corporation Halbleiteranordnung
CN112447628A (zh) * 2019-09-05 2021-03-05 联想（新加坡）私人有限公司 散热机构和电子设备
JP2021089914A (ja) * 2019-12-02 2021-06-10 昭和電工株式会社 放熱装置及び放熱装置の製造方法
WO2022137704A1 (ja) * 2020-12-22 2022-06-30 日立Astemo株式会社 パワーモジュールおよび電力変換装置
WO2022168618A1 (ja) * 2021-02-03 2022-08-11 ローム株式会社 半導体装置
JP2022177207A (ja) * 2017-03-23 2022-11-30 株式会社東芝 セラミックス金属回路基板およびそれを用いた半導体装置
DE102021211643A1 (de) 2021-10-14 2023-04-20 Robert Bosch Gesellschaft mit beschränkter Haftung Elektronikvorrichtung
JP2023127713A (ja) * 2022-03-02 2023-09-14 三菱電機株式会社 半導体装置および半導体装置の製造方法
WO2023243278A1 (ja) * 2022-06-14 2023-12-21 ローム株式会社 半導体装置
US12009310B2 (en) 2020-01-07 2024-06-11 Fuji Electric Co., Ltd. Semiconductor device
WO2025027845A1 (ja) * 2023-08-03 2025-02-06 三菱電機株式会社 半導体装置および半導体装置の製造方法

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60200546A (ja) * 1984-03-26 1985-10-11 Hitachi Ltd 半導体装置
JPH01270336A (ja) * 1988-04-22 1989-10-27 Hitachi Ltd 半導体装置の製造方法
JPH02283041A (ja) * 1989-04-25 1990-11-20 Seiko Epson Corp 半導体装置
US5278446A (en) * 1992-07-06 1994-01-11 Motorola, Inc. Reduced stress plastic package
JPH1084059A (ja) * 1996-09-09 1998-03-31 Toshiba Corp 窒化けい素回路基板
JP2003124406A (ja) * 2001-08-06 2003-04-25 Denso Corp 半導体装置
JP2004071888A (ja) * 2002-08-07 2004-03-04 Mitsubishi Electric Corp 半導体装置用回路基板及び半導体装置
JP2005191178A (ja) * 2003-12-25 2005-07-14 Mitsubishi Electric Corp 半導体装置
JP2005353945A (ja) * 2004-06-14 2005-12-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2006222347A (ja) * 2005-02-14 2006-08-24 Toyota Motor Corp 半導体モジュールと半導体モジュールの製造方法
JP2006303216A (ja) * 2005-04-21 2006-11-02 Denso Corp 樹脂封止型半導体装置
JP2012151164A (ja) * 2011-01-17 2012-08-09 Mitsubishi Electric Corp 半導体装置
JP2012191010A (ja) * 2011-03-10 2012-10-04 Fuji Electric Co Ltd 半導体装置およびその製造方法
WO2013136895A1 (ja) * 2012-03-15 2013-09-19 富士電機株式会社 半導体装置

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60200546A (ja) * 1984-03-26 1985-10-11 Hitachi Ltd 半導体装置
JPH01270336A (ja) * 1988-04-22 1989-10-27 Hitachi Ltd 半導体装置の製造方法
JPH02283041A (ja) * 1989-04-25 1990-11-20 Seiko Epson Corp 半導体装置
US5278446A (en) * 1992-07-06 1994-01-11 Motorola, Inc. Reduced stress plastic package
JPH0677353A (ja) * 1992-07-06 1994-03-18 Motorola Inc 応力を軽減したプラスチック・パッケージ
JPH1084059A (ja) * 1996-09-09 1998-03-31 Toshiba Corp 窒化けい素回路基板
JP2003124406A (ja) * 2001-08-06 2003-04-25 Denso Corp 半導体装置
JP2004071888A (ja) * 2002-08-07 2004-03-04 Mitsubishi Electric Corp 半導体装置用回路基板及び半導体装置
JP2005191178A (ja) * 2003-12-25 2005-07-14 Mitsubishi Electric Corp 半導体装置
JP2005353945A (ja) * 2004-06-14 2005-12-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2006222347A (ja) * 2005-02-14 2006-08-24 Toyota Motor Corp 半導体モジュールと半導体モジュールの製造方法
JP2006303216A (ja) * 2005-04-21 2006-11-02 Denso Corp 樹脂封止型半導体装置
JP2012151164A (ja) * 2011-01-17 2012-08-09 Mitsubishi Electric Corp 半導体装置
JP2012191010A (ja) * 2011-03-10 2012-10-04 Fuji Electric Co Ltd 半導体装置およびその製造方法
WO2013136895A1 (ja) * 2012-03-15 2013-09-19 富士電機株式会社 半導体装置

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016115704A (ja) * 2014-12-11 2016-06-23 トヨタ自動車株式会社 半導体装置
WO2017006771A1 (ja) * 2015-07-06 2017-01-12 ローム株式会社 パワーモジュールおよびインバータ装置
JP2017017283A (ja) * 2015-07-06 2017-01-19 ローム株式会社 パワーモジュールおよびインバータ装置
US10748826B2 (en) 2015-07-06 2020-08-18 Rohm Co., Ltd. Power module and inverter equipment
JP2017054878A (ja) * 2015-09-08 2017-03-16 株式会社村田製作所 半導体モジュール
CN107104080A (zh) * 2015-10-09 2017-08-29 三菱电机株式会社 半导体装置
DE102016214155B4 (de) 2015-10-09 2023-10-26 Mitsubishi Electric Corporation Halbleiteranordnung
JP2017073529A (ja) * 2015-10-09 2017-04-13 三菱電機株式会社 半導体装置
US10658324B2 (en) 2015-10-09 2020-05-19 Mitsubishi Electric Corporation Semiconductor device
JP2017084921A (ja) * 2015-10-27 2017-05-18 三菱マテリアル株式会社 パワーモジュール
WO2017086248A1 (ja) * 2015-11-20 2017-05-26 三菱電機株式会社 電力用半導体装置および電力用半導体装置の製造方法
US9960126B2 (en) 2016-07-19 2018-05-01 Mitsubishi Electric Corporation Semiconductor device
DE102017207117A1 (de) 2016-07-19 2018-01-25 Mitsubishi Electric Corporation Halbleiteranordnung
CN107634036B (zh) * 2016-07-19 2020-06-30 三菱电机株式会社 半导体装置
CN107634036A (zh) * 2016-07-19 2018-01-26 三菱电机株式会社 半导体装置
JP2018014357A (ja) * 2016-07-19 2018-01-25 三菱電機株式会社 半導体装置
JP7451638B2 (ja) 2017-03-23 2024-03-18 株式会社東芝 セラミックス金属回路基板の製造方法および半導体装置の製造方法
US11973003B2 (en) 2017-03-23 2024-04-30 Kabushiki Kaisha Toshiba Ceramic metal circuit board and semiconductor device using the same
JP2022177207A (ja) * 2017-03-23 2022-11-30 株式会社東芝 セラミックス金属回路基板およびそれを用いた半導体装置
JP2021040096A (ja) * 2019-09-05 2021-03-11 レノボ・シンガポール・プライベート・リミテッド 放熱機構および電子機器
CN112447628A (zh) * 2019-09-05 2021-03-05 联想（新加坡）私人有限公司 散热机构和电子设备
JP2021089914A (ja) * 2019-12-02 2021-06-10 昭和電工株式会社 放熱装置及び放熱装置の製造方法
US12009310B2 (en) 2020-01-07 2024-06-11 Fuji Electric Co., Ltd. Semiconductor device
WO2022137704A1 (ja) * 2020-12-22 2022-06-30 日立Astemo株式会社 パワーモジュールおよび電力変換装置
JP2022098581A (ja) * 2020-12-22 2022-07-04 日立Astemo株式会社 パワーモジュールおよび電力変換装置
JP7549520B2 (ja) 2020-12-22 2024-09-11 日立Astemo株式会社 パワーモジュールおよび電力変換装置
WO2022168618A1 (ja) * 2021-02-03 2022-08-11 ローム株式会社 半導体装置
DE102021211643A1 (de) 2021-10-14 2023-04-20 Robert Bosch Gesellschaft mit beschränkter Haftung Elektronikvorrichtung
JP2023127713A (ja) * 2022-03-02 2023-09-14 三菱電機株式会社 半導体装置および半導体装置の製造方法
WO2023243278A1 (ja) * 2022-06-14 2023-12-21 ローム株式会社 半導体装置
WO2025027845A1 (ja) * 2023-08-03 2025-02-06 三菱電機株式会社 半導体装置および半導体装置の製造方法

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