WO2018055667A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2018055667A1
WO2018055667A1 PCT/JP2016/077664 JP2016077664W WO2018055667A1 WO 2018055667 A1 WO2018055667 A1 WO 2018055667A1 JP 2016077664 W JP2016077664 W JP 2016077664W WO 2018055667 A1 WO2018055667 A1 WO 2018055667A1
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WIPO (PCT)
Prior art keywords
case housing
heat sink
semiconductor device
outer peripheral
semiconductor chip
Prior art date
Application number
PCT/JP2016/077664
Other languages
English (en)
French (fr)
Inventor
林田　幸昌
大介 大宅
貴之 松本
龍太郎 伊達
Original Assignee
三菱電機株式会社
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Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to DE112016007241.4T priority Critical patent/DE112016007241B4/de
Priority to JP2018540511A priority patent/JP6699742B2/ja
Priority to PCT/JP2016/077664 priority patent/WO2018055667A1/ja
Priority to CN201680089339.0A priority patent/CN109716516B/zh
Priority to US16/098,901 priority patent/US10748830B2/en
Publication of WO2018055667A1 publication Critical patent/WO2018055667A1/ja

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Definitions

  • the present invention relates to a semiconductor device used for motor control of, for example, electric railway equipment or automobile equipment.
  • the case casing and the heat sink are bonded with an adhesive.
  • an adhesive In order to secure a certain volume of the adhesive applied to the heat sink, the case housing surrounds the heat sink. Therefore, the size of the heat sink has to be smaller than the case housing. Further, when there is no step portion on the case housing side or the heat sink side (see, for example, Patent Document 1), there is a concern that the adhesive is crushed and the volume of the adhesive itself is lost, and the sealing function is impaired.
  • the heat diffusion range cannot be expanded. Also, the heat dissipation function cannot be maximized due to the limitation of the heat sink size. In recent years, as the size of semiconductor devices has been reduced, it has become difficult to secure a mounting hole diameter for mounting on a cooler on the heat sink if the size of the heat sink is limited.
  • the present invention has been made to solve the above-described problems, and its object is to obtain a semiconductor device capable of ensuring a sealing effect, reducing contact thermal resistance, and improving the likelihood of cooling design. Is.
  • the semiconductor device includes a heat sink, a wiring board provided on the heat sink, a semiconductor chip provided on the wiring board, and the heat sink so as to surround the wiring board and the semiconductor chip.
  • a case housing provided on top, an adhesive that adheres the lower surface of the case housing and the outer periphery of the upper surface of the heat sink, and a seal that fills the case housing and covers the wiring substrate and the semiconductor chip
  • a step portion is provided on at least one of the lower surface of the case housing and the outer peripheral portion of the upper surface of the heat radiating plate, and the side surface of the heat radiating plate and the outer surface of the case housing are the same surface.
  • a step portion is provided on at least one of the lower surface of the case housing and the outer peripheral portion of the upper surface of the heat sink.
  • FIG. 1 is a bottom view showing a semiconductor device according to a first embodiment of the present invention. It is sectional drawing to which the adhesion part of the case housing
  • FIG. 1 is a cross-sectional view showing a semiconductor device according to the first embodiment of the present invention.
  • a wiring board 2 is provided on the heat sink 1.
  • the heat sink 1 is a metal such as Cu, AlSiC, or Al.
  • the wiring board 2 is such that a lower surface electrode 3 is provided on the lower surface of a ceramic substrate or the like, and upper surface electrodes 4, 5, 6 are provided on the upper surface.
  • the lower surface electrode 3 of the wiring board 2 is joined to the heat sink 1 by solder 7.
  • a semiconductor chip 8 is provided on the upper surface electrode 4 of the wiring board 2.
  • the upper surface electrode of the semiconductor chip 8 is connected to the upper surface electrode 5 of the wiring substrate 2 by a wire 9.
  • a case housing 10 is provided on the heat sink 1 so as to surround the wiring substrate 2 and the semiconductor chip 8.
  • the case housing 10 is an engineering plastic such as PPS, PBT, or PET + PBT.
  • the lower surface of the case housing 10 and the outer peripheral portion of the upper surface of the heat radiating plate 1 are bonded with an adhesive 11.
  • the adhesive 11 is a silicone-based or epoxy-based material.
  • the electrode terminal 12 is connected to the upper surface electrode 6 of the wiring board 2 and pulled out of the case housing 10.
  • an insulating sealing material 13 such as silicone gel is filled in the case housing 10 to cover the wiring substrate 2 and the semiconductor chip 8.
  • FIG. 2 is a bottom view showing the semiconductor device according to the first embodiment of the present invention.
  • a mounting hole 14 for a cooler and a case mounting screw hole 15 are provided on the outer peripheral portion of the heat radiating plate 1.
  • FIG. 3 is an enlarged cross-sectional view of the bonding portion between the case housing and the heat sink of the semiconductor device according to the first embodiment of the present invention.
  • a convex portion 16 is provided on the outer portion of the lower surface of the case housing 10
  • a concave portion 17 is provided on the outer peripheral portion of the upper surface of the heat radiating plate 1 at a position facing the convex portion 16.
  • the side surface of the heat sink 1 and the outer surface of the case housing 10 are the same surface.
  • the heat sink 1 When molding the heat sink 1 by melting metal, grooves or projections are provided in the mold or mold, and the outer periphery of the heat sink 1 is additionally processed during casting. Moreover, when forming the recessed part 17 after shape
  • FIG. 4 is an enlarged cross-sectional view of a bonding portion between a case housing and a heat sink of a semiconductor device according to a comparative example.
  • the case housing 10 surrounds the heat sink 1 in order to secure a certain volume of the adhesive 11 applied to the heat sink 1. Therefore, the size of the heat sink 1 must be smaller than the case housing 10.
  • a convex portion 16 is provided on the outer portion of the lower surface of the case housing 10, and a concave portion 17 is provided on the outer peripheral portion of the upper surface of the heat sink 1 at a position facing the convex portion 16. It has been. Thereby, the fixed effect of the adhesive 11 which adhere
  • FIG. FIG. 5 is an enlarged cross-sectional view of the bonding portion between the case housing and the heat sink of the semiconductor device according to the second embodiment of the present invention.
  • a groove 18 is provided in the convex portion 16 of the case housing 10, and a protrusion 19 is provided in the concave portion 17 of the heat radiating plate 1 at a position facing the groove 18.
  • the groove 18 of the case housing 10 and the protrusion 19 of the heat sink 1 are engaged with each other, so that leakage of the sealing material 13 and protrusion of the adhesive 11 can be prevented. Improves. Further, the positioning accuracy of the case housing 10 is also improved.
  • FIG. FIG. 6 is an enlarged cross-sectional view of the bonding portion between the case housing and the heat sink of the semiconductor device according to the third embodiment of the present invention.
  • a concave portion 20 is provided on the outer portion of the lower surface of the case housing 10
  • a convex portion 21 is provided on the outer peripheral portion of the upper surface of the radiator plate 1 at a position facing the concave portion 20.
  • the convex portion 21 of the heat radiating plate 1 can prevent the sealing material 13 from leaking and the adhesive 11 from protruding, so that productivity is improved.
  • FIG. 7 is an enlarged cross-sectional view of a bonding portion between a case housing and a heat sink of a semiconductor device according to Embodiment 4 of the present invention.
  • a convex portion 16 is provided at the central portion of the lower surface of the case housing 10
  • a concave portion 17 is provided on the outer peripheral portion of the upper surface of the heat radiating plate 1 at a position facing the convex portion 16.
  • FIG. FIG. 8 is an enlarged cross-sectional view of the bonding portion between the case housing and the heat sink of the semiconductor device according to the fifth embodiment of the present invention.
  • a convex portion 16 is provided on the outer portion of the lower surface of the case housing 10
  • a chamfer 22 is provided on the inner portion of the lower surface of the case housing 10. Since the adhesive 11 is pulled up toward the case housing 10 by the surface tension acting on the chamfer 22, the volume of the adhesive 11 can be secured and the sealing effect is improved. Moreover, since it becomes unnecessary to process the heat sink 1, cost can be reduced and heat dissipation can be improved. In addition, the same effects as those of the first embodiment can be obtained.
  • FIG. FIG. 9 is an enlarged cross-sectional view of the bonding portion between the case housing and the heat sink of the semiconductor device according to the sixth embodiment of the present invention.
  • a recess 17 is provided on the outer peripheral portion of the upper surface of the radiator plate 1 as a stepped portion.
  • An air reservoir 23 is provided on the lower surface of the case housing 10.
  • the insulating property can be improved by allowing the bubbles 24 in the adhesive 11 to escape to the air pool 23 instead of the inside of the apparatus.
  • FIG. FIG. 10 is an enlarged cross-sectional view of a bonding portion between a case housing and a heat sink of a semiconductor device according to Embodiment 7 of the present invention.
  • a convex portion 16 is provided on an inner portion of the lower surface of the case housing 10.
  • a chamfer 22 is provided on the outer portion of the lower surface of the case housing 10. The insulating property can be improved by the bubbles 24 in the adhesive 11 being removed to the outside of the apparatus.
  • the same effects as those of the first embodiment can be obtained.
  • FIG. 11 is an enlarged cross-sectional view of a bonding portion between a case housing and a heat sink of a semiconductor device according to Embodiment 8 of the present invention.
  • an air reservoir 23 is provided on the lower surface of the case housing 10. The insulating property can be improved by the bubbles 24 in the adhesive 11 being removed from the outside of the apparatus or into the air pool 23.
  • the semiconductor chip 8 is an IGBT or a diode formed of silicon, but may be an SiC-MOSFET or SiC-SBD formed of a wide band gap semiconductor.
  • the wide band gap semiconductor is, for example, silicon carbide, a gallium nitride-based material, or diamond.
  • a power semiconductor element formed of such a wide band gap semiconductor can be miniaturized because of its high voltage resistance and allowable current density. By using this miniaturized element, a semiconductor device incorporating this element can also be miniaturized.
  • the heat resistance of the element is high, the heat dissipating fins of the heat sink can be reduced in size and the water cooling part can be cooled in the air, so that the semiconductor device can be further reduced in size.
  • the semiconductor device since the power loss of the element is low and the efficiency is high, the semiconductor device can be highly efficient.

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Abstract

放熱板（１）上に配線基板（２）が設けられている。配線基板（２）上に半導体チップ（８）が設けられている。配線基板（２）及び半導体チップ（８）を囲うように放熱板（１）上にケース筐体（１０）が設けられている。ケース筐体（１０）の下面と放熱板（１）の上面外周部が接着剤（１１）により接着されている。封止材（１３）がケース筐体（１０）内に設けられ、配線基板（２）及び半導体チップ（８）を覆っている。ケース筐体（１０）の下面と放熱板（１）の上面外周部の少なくとも一方に段差部（１６，１７）が設けられている。放熱板（１）の側面とケース筐体（１０）の外側面が同一面である。

Description

半導体装置
　本発明は、例えば電鉄用機器又は自動車用機器のモータ制御に使用される半導体装置に関する。
　ケース筐体内にゲルが充填される半導体装置では、ケース筐体と放熱板は接着剤により接着される。これにより、接合部からの水分侵入又はゲルの外部への漏れを防止することができる。ただし、放熱板に塗布した接着剤の一定のボリュームを確保するため、ケース筐体が放熱板を囲っていた。従って、放熱板のサイズをケース筐体より小さくしなければならなかった。また、ケース筐体側にも放熱板側にも段差部が無い場合（例えば、特許文献１参照）、接着剤を押しつぶして接着剤自身のボリュームが無くなり、シール機能を損なう懸念があった。
日本特開平１１－２１４６１２号公報
　放熱板のサイズをケース筐体より小さくすると、熱拡散範囲を拡大できない。また、放熱板サイズの制限により放熱機能を最大限に発揮できない。また、近年、半導体装置の縮小化が進むにあたり、放熱板サイズが制限されたままでは、冷却器へ取り付けるための取付穴径を放熱板上に確保することが困難になってきている。
　本発明は、上述のような課題を解決するためになされたもので、その目的はシール効果を担保し、接触熱抵抗を低減させ、冷却設計の尤度を向上させることができる半導体装置を得るものである。
　本発明に係る半導体装置は、放熱板と、前記放熱板上に設けられた配線基板と、前記配線基板上に設けられた半導体チップと、前記配線基板及び前記半導体チップを囲うように前記放熱板上に設けられたケース筐体と、前記ケース筐体の下面と前記放熱板の上面外周部を接着する接着剤と、前記ケース筐体内に充填され、前記配線基板及び前記半導体チップを覆う封止材とを備え、前記ケース筐体の前記下面と前記放熱板の前記上面外周部の少なくとも一方に段差部が設けられ、前記放熱板の側面と前記ケース筐体の外側面が同一面である。
　本発明では、ケース筐体の下面と放熱板の上面外周部の少なくとも一方に段差部が設けられている。これにより、ケース筐体と放熱板を接着する接着剤の一定ボリュームを確保してシール効果を担保することができる。また、放熱板の側面とケース筐体の外側面が同一面である。これにより、放熱範囲を拡大することができるため、接触熱抵抗を低減させ、冷却設計の尤度を向上させることができる。
本発明の実施の形態１に係る半導体装置を示す断面図である。 本発明の実施の形態１に係る半導体装置を示す下面図である。 本発明の実施の形態１に係る半導体装置のケース筐体と放熱板の接着部を拡大した断面図である。 比較例に係る半導体装置のケース筐体と放熱板の接着部を拡大した断面図である。 本発明の実施の形態２に係る半導体装置のケース筐体と放熱板の接着部を拡大した断面図である。 本発明の実施の形態３に係る半導体装置のケース筐体と放熱板の接着部を拡大した断面図である。 本発明の実施の形態４に係る半導体装置のケース筐体と放熱板の接着部を拡大した断面図である。 本発明の実施の形態５に係る半導体装置のケース筐体と放熱板の接着部を拡大した断面図である。 本発明の実施の形態６に係る半導体装置のケース筐体と放熱板の接着部を拡大した断面図である。 本発明の実施の形態７に係る半導体装置のケース筐体と放熱板の接着部を拡大した断面図である。 本発明の実施の形態８に係る半導体装置のケース筐体と放熱板の接着部を拡大した断面図である。
　本発明の実施の形態に係る半導体装置について図面を参照して説明する。同じ又は対応する構成要素には同じ符号を付し、説明の繰り返しを省略する場合がある。
実施の形態１．
　図１は、本発明の実施の形態１に係る半導体装置を示す断面図である。放熱板１上に配線基板２が設けられている。放熱板１は、Ｃｕ、ＡｌＳｉＣ又はＡｌなどの金属である。配線基板２は、セラミック基板などの下面に下面電極３が設けられ、上面に上面電極４，５，６が設けられたものである。配線基板２の下面電極３ははんだ７により放熱板１に接合されている。配線基板２の上面電極４上に半導体チップ８が設けられている。半導体チップ８の上面電極はワイヤ９により配線基板２の上面電極５に接続されている。
　ケース筐体１０が配線基板２及び半導体チップ８を囲うように放熱板１上に設けられている。ケース筐体１０は、例えばＰＰＳ、ＰＢＴ又はＰＥＴ＋ＰＢＴなどのエンジニアリングプラスチックである。ケース筐体１０の下面と放熱板１の上面外周部が接着剤１１により接着されている。接着剤１１は、シリコーン系又はエポキシ系の材料などである。
　電極端子１２が配線基板２の上面電極６に接続され、ケース筐体１０の外部に引き出されている。絶縁性を担保するために、シリコーンゲルなどの絶縁性の封止材１３がケース筐体１０内に充填され、配線基板２及び半導体チップ８などを覆っている。
　図２は、本発明の実施の形態１に係る半導体装置を示す下面図である。放熱板１の外周部には、冷却器への取付穴１４とケース取付ネジ穴１５が設けられている。
　図３は、本発明の実施の形態１に係る半導体装置のケース筐体と放熱板の接着部を拡大した断面図である。段差部として、ケース筐体１０の下面の外側部分に凸部１６が設けられ、放熱板１の上面外周部には凸部１６に対向する位置に凹部１７が設けられている。放熱板１の側面とケース筐体１０の外側面が同一面である。
　金属融解により放熱板１を成型する場合は、金型又は鋳型に溝又は突起を設けて鋳造時に放熱板１の外周部を追加加工する。また、放熱板１の表面形状を成型した後に凹部１７を形成する場合は、凹部１７となる部分以外をレジストマスクで覆い、エッチングにより凹部１７を成形する。レジスト・エッチングを行わない場合は、プレスにより凹部１７を成形してもよい。
　続いて、本実施の形態の効果を比較例と比較して説明する。図４は、比較例に係る半導体装置のケース筐体と放熱板の接着部を拡大した断面図である。比較例では、放熱板１に塗布した接着剤１１の一定のボリュームを確保するため、ケース筐体１０が放熱板１を囲っている。従って、放熱板１のサイズをケース筐体１０より小さくしなければならない。
　一方、本実施の形態では、段差部として、ケース筐体１０の下面の外側部分に凸部１６が設けられ、放熱板１の上面外周部には凸部１６に対向する位置に凹部１７が設けられている。これにより、ケース筐体１０と放熱板１を接着する接着剤１１の一定ボリュームを確保してシール効果を担保することができる。また、放熱板１の側面とケース筐体１０の外側面が同一面である。これにより、放熱範囲を拡大することができるため、冷却器への取付穴１４とケース取付ネジ穴１５を確保するためのクリアランス範囲が拡大される。このため、接触熱抵抗を低減させ、冷却設計の尤度を向上させることができる。この結果、半導体装置の寿命設計が有利になる。
実施の形態２．
　図５は、本発明の実施の形態２に係る半導体装置のケース筐体と放熱板の接着部を拡大した断面図である。実施の形態１の構成に加えて、ケース筐体１０の凸部１６に溝１８が設けられ、放熱板１の凹部１７には溝１８に対向する位置に突起１９が設けられている。
　実施の形態１と同様の効果に加え、ケース筐体１０の溝１８と放熱板１の突起１９がかみ合うことにより、封止材１３の漏れと接着剤１１のはみ出しを防ぐことができるため、生産性が向上する。また、ケース筐体１０の位置決め精度も向上する。
実施の形態３．
　図６は、本発明の実施の形態３に係る半導体装置のケース筐体と放熱板の接着部を拡大した断面図である。段差部として、ケース筐体１０の下面の外側部分に凹部２０が設けられ、放熱板１の上面外周部には凹部２０に対向する位置に凸部２１が設けられている。実施の形態１と同様の効果に加え、放熱板１の凸部２１により封止材１３の漏れと接着剤１１のはみ出しを防ぐことができるため、生産性が向上する。
実施の形態４．
　図７は、本発明の実施の形態４に係る半導体装置のケース筐体と放熱板の接着部を拡大した断面図である。段差部として、ケース筐体１０の下面の中央部分に凸部１６が設けられ、放熱板１の上面外周部には凸部１６に対向する位置に凹部１７が設けられている。これにより、実施の形態３と同様の効果に加え、接着剤１１の塗布量を低減することができる。また、ケース筐体１０の位置決め精度も向上する。
実施の形態５．
　図８は、本発明の実施の形態５に係る半導体装置のケース筐体と放熱板の接着部を拡大した断面図である。段差部として、ケース筐体１０の下面の外側部分に凸部１６が設けられ、ケース筐体１０の下面の内側部分に面取り２２が設けられている。面取り２２に作用する表面張力により接着剤１１がケース筐体１０側に引き上げられるため、接着剤１１のボリュームを確保でき、シール効果が向上する。また、放熱板１を加工する必要がなくなるため、コストを削減し、放熱性を向上することができる。その他、実施の形態１と同様の効果を得ることができる。
実施の形態６．
　図９は、本発明の実施の形態６に係る半導体装置のケース筐体と放熱板の接着部を拡大した断面図である。実施の形態５の構成に加えて、段差部として、放熱板１の上面外周部に凹部１７が設けられている。また、ケース筐体１０の下面にエアだまり２３が設けられている。実施の形態５と同様の効果に加え、接着剤１１内の気泡２４が装置内部でなくエアだまり２３に抜けることで絶縁性を向上させることができる。
実施の形態７．
　図１０は、本発明の実施の形態７に係る半導体装置のケース筐体と放熱板の接着部を拡大した断面図である。段差部として、ケース筐体１０の下面の内側部分に凸部１６が設けられている。また、ケース筐体１０の下面の外側部分に面取り２２が設けられている。接着剤１１内の気泡２４が装置外側に抜けることで絶縁性を向上させることができる。その他、実施の形態１と同様の効果を得ることができる。
実施の形態８．
　図１１は、本発明の実施の形態８に係る半導体装置のケース筐体と放熱板の接着部を拡大した断面図である。実施の形態７の構成に加えて、ケース筐体１０の下面にエアだまり２３が設けられている。接着剤１１内の気泡２４が装置外側又はエアだまり２３に抜けることで絶縁性を向上させることができる。
　なお、半導体チップ８は珪素によって形成されたＩＧＢＴ又はダイオードであるが、ワイドバンドギャップ半導体によって形成されたＳｉＣ－ＭＯＳＦＥＴ又はＳｉＣ－ＳＢＤでもよい。ワイドバンドギャップ半導体は、例えば、炭化珪素、窒化ガリウム系材料、又はダイヤモンドである。このようなワイドバンドギャップ半導体によって形成されたパワー半導体素子は、耐電圧性や許容電流密度が高いため、小型化できる。この小型化された素子を用いることで、この素子を組み込んだ半導体装置も小型化できる。また、素子の耐熱性が高いため、ヒートシンクの放熱フィンを小型化でき、水冷部を空冷化できるので、半導体装置を更に小型化できる。また、素子の電力損失が低く高効率であるため、半導体装置を高効率化できる。
１　放熱板、２　配線基板、８　半導体チップ、１０　ケース筐体、１１　接着剤、１３　封止材、１６，２１　凸部、１７，２０　凹部、１８　溝、１９　突起、２２　面取り、２３　エアだまり

Claims (10)

  1. 　放熱板と、
    　前記放熱板上に設けられた配線基板と、
    　前記配線基板上に設けられた半導体チップと、
    　前記配線基板及び前記半導体チップを囲うように前記放熱板上に設けられたケース筐体と、
    　前記ケース筐体の下面と前記放熱板の上面外周部を接着する接着剤と、
    　前記ケース筐体内に充填され、前記配線基板及び前記半導体チップを覆う封止材とを備え、
    　前記ケース筐体の前記下面と前記放熱板の前記上面外周部の少なくとも一方に段差部が設けられ、
    　前記放熱板の側面と前記ケース筐体の外側面が同一面であることを特徴とする半導体装置。
  2. 　前記段差部として、前記ケース筐体の前記下面の外側部分に凸部が設けられ、前記放熱板の前記上面外周部には前記凸部に対向する位置に凹部が設けられていることを特徴とする請求項１に記載の半導体装置。
  3. 　前記段差部として、前記ケース筐体の前記凸部に溝が設けられ、前記放熱板の前記凹部には前記溝に対向する位置に突起が設けられていることを特徴とする請求項２に記載の半導体装置。
  4. 　前記段差部として、前記ケース筐体の前記下面の外側部分に凹部が設けられ、前記放熱板の前記上面外周部には前記凹部に対向する位置に凸部が設けられていることを特徴とする請求項１に記載の半導体装置。
  5. 　前記段差部として、前記ケース筐体の前記下面の中央部分に凸部が設けられ、前記放熱板の前記上面外周部には前記凸部に対向する位置に凹部が設けられていることを特徴とする請求項１に記載の半導体装置。
  6. 　前記段差部として、前記ケース筐体の前記下面の外側部分に凸部が設けられ、
    　前記ケース筐体の前記下面の内側部分に面取りが設けられていることを特徴とする請求項１に記載の半導体装置。
  7. 　前記段差部として、前記放熱板の前記上面外周部に凹部が設けられ、
    　前記ケース筐体の前記下面にエアだまりが設けられていることを特徴とする請求項６に記載の半導体装置。
  8. 　前記段差部として、前記ケース筐体の前記下面の内側部分に凸部が設けられ、
    　前記ケース筐体の前記下面の外側部分に面取りが設けられていることを特徴とする請求項１に記載の半導体装置。
  9. 　前記ケース筐体の前記下面にエアだまりが設けられていることを特徴とする請求項８に記載の半導体装置。
  10. 　前記半導体チップはワイドバンドギャップ半導体によって形成されていることを特徴とする請求項１～９の何れか１項に記載の半導体装置。
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