CN109716516A - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN109716516A
CN109716516A CN201680089339.0A CN201680089339A CN109716516A CN 109716516 A CN109716516 A CN 109716516A CN 201680089339 A CN201680089339 A CN 201680089339A CN 109716516 A CN109716516 A CN 109716516A
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housing frame
heat sink
semiconductor device
protrusion
peripheral part
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CN109716516B (zh
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林田幸昌
大宅大介
松本贵之
伊达龙太郎
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Mitsubishi Electric Corp
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Abstract

在散热板(1)之上设置有配线基板(2)。在配线基板(2)之上设置有半导体芯片(8)。以将配线基板(2)以及半导体芯片(8)包围的方式在散热板(1)之上设置有外壳框体(10)。外壳框体(10)的下表面与散热板(1)的上表面外周部通过粘接剂(11)而粘接。封装材料(13)设置于外壳框体(10)内，覆盖配线基板(2)以及半导体芯片(8)。在外壳框体(10)的下表面和散热板(1)的上表面外周部的至少一者设置有台阶部(16、17)。散热板(1)的侧面与外壳框体(10)的外侧面是同一面。

Description

半导体装置
技术领域
本发明涉及例如电力铁路用设备或者汽车用设备的电动机控制所使用的半导体装置。
背景技术
就在外壳框体内填充凝胶的半导体装置而言，外壳框体与散热板通过粘接剂而粘接。由此，能够防止来自接合部的水分侵入或者防止凝胶向外部漏出。但是，为了确保涂敷在散热板的粘接剂的一定的体积，外壳框体将散热板包围。因此，必须使散热板的尺寸小于外壳框体。另外，在外壳框体侧和散热板侧都没有台阶部的情况下(例如，参照专利文献1)，存在将粘接剂压垮而使粘接剂本身的体积消失，损害密封功能的担忧。
专利文献1：日本特开平11-214612号公报
发明内容
如果使散热板的尺寸比外壳框体小，则无法扩大热扩散范围。另外，由于散热板尺寸的限制而无法最大限度地发挥散热功能。另外，近年来，在半导体装置的缩小化发展之际，在散热板尺寸被限制的形势之下，在散热板之上确保用于向冷却器进行安装的安装孔径这一点日趋困难。
本发明就是为了解决上述这样的课题而提出的，其目的在于，得到能够保证密封效果、使接触热阻降低、使冷却设计的合理性提高的半导体装置。
本发明涉及的半导体装置具备：散热板；配线基板，其设置于所述散热板之上；半导体芯片，其设置于所述配线基板之上；外壳框体，其以将所述配线基板以及所述半导体芯片包围的方式设置于所述散热板之上；粘接剂，其将所述外壳框体的下表面与所述散热板的上表面外周部粘接；以及封装材料，其填充至所述外壳框体内，覆盖所述配线基板以及所述半导体芯片，在所述外壳框体的所述下表面与所述散热板的所述上表面外周部的至少一者设置台阶部，所述散热板的侧面与所述外壳框体的外侧面是同一面。
发明的效果
在本发明中，在外壳框体的下表面和散热板的上表面外周部的至少一者设置有台阶部。由此，能够确保将外壳框体和散热板粘接的粘接剂的一定体积而保证密封效果。另外，散热板的侧面与外壳框体的外侧面是同一面。由此，能够扩大散热范围，因此能够使接触热阻降低、使冷却设计的合理性提高。
附图说明
图1是表示本发明的实施方式1涉及的半导体装置的剖面图。
图2是表示本发明的实施方式1涉及的半导体装置的仰视图。
图3是将本发明的实施方式1涉及的半导体装置的外壳框体和散热板的粘接部放大的剖面图。
图4是将对比例涉及的半导体装置的外壳框体和散热板的粘接部放大的剖面图。
图5是将本发明的实施方式2涉及的半导体装置的外壳框体和散热板的粘接部放大的剖面图。
图6是将本发明的实施方式3涉及的半导体装置的外壳框体和散热板的粘接部放大的剖面图。
图7是将本发明的实施方式4涉及的半导体装置的外壳框体和散热板的粘接部放大的剖面图。
图8是将本发明的实施方式5涉及的半导体装置的外壳框体和散热板的粘接部放大的剖面图。
图9是将本发明的实施方式6涉及的半导体装置的外壳框体和散热板的粘接部放大的剖面图。
图10是将本发明的实施方式7涉及的半导体装置的外壳框体和散热板的粘接部放大的剖面图。
图11是将本发明的实施方式8涉及的半导体装置的外壳框体和散热板的粘接部放大的剖面图。
具体实施方式
参照附图，对本发明的实施方式涉及的半导体装置进行说明。对相同或相应的结构要素标注相同的标号，有时省略重复说明。
实施方式1.
图1是表示本发明的实施方式1涉及的半导体装置的剖面图。在散热板1之上设置有配线基板2。散热板1是Cu、AlSiC或者Al等金属。配线基板2是在陶瓷基板等的下表面设置有下表面电极3、在上表面设置有上表面电极4、5、6的配线基板。配线基板2的下表面电极3通过焊料7与散热板1接合。在配线基板2的上表面电极4之上设置有半导体芯片8。半导体芯片8的上表面电极通过导线9与配线基板2的上表面电极5连接。
外壳框体10以将配线基板2以及半导体芯片8包围的方式设置在散热板1之上。外壳框体10例如是PPS、PBT或者PET+PBT等工程塑料。外壳框体10的下表面与散热板1的上表面外周部通过粘接剂11而粘接。粘接剂11是硅类或者环氧类的材料等。
电极端子12与配线基板2的上表面电极6连接，该电极端子12被引出至外壳框体10的外部。为了保证绝缘性，将硅凝胶等绝缘性的封装材料13填充至外壳框体10内，覆盖配线基板2以及半导体芯片8等。
图2是表示本发明的实施方式1涉及的半导体装置的仰视图。在散热板1的外周部设置有外壳安装螺孔15和向冷却器的安装孔14。
图3是将本发明的实施方式1涉及的半导体装置的外壳框体和散热板的粘接部放大的剖面图。作为台阶部，在外壳框体10的下表面的外侧部分设置有凸部16，在散热板1的上表面外周部，在与凸部16相对的位置设置有凹部17。散热板1的侧面与外壳框体10的外侧面是同一面。
在通过金属融化而对散热板1进行成型的情况下，在模具或者铸模设置槽或者凸起，在铸造时对散热板1的外周部进行追加加工。另外，在将散热板1的表面形状成型之后而形成凹部17的情况下，将除了成为凹部17的部分以外通过抗蚀掩模而覆盖，通过蚀刻而将凹部17成形。也可以在不进行抗蚀-蚀刻的情况下，通过加压而将凹部17成形。
接着，与对比例进行比较而对本实施方式的效果进行说明。图4是将对比例涉及的半导体装置的外壳框体和散热板的粘接部放大的剖面图。在对比例中，为了确保涂敷在散热板1的粘接剂11的一定的体积，外壳框体10将散热板1包围。因此，必须使散热板1的尺寸小于外壳框体10。
另一方面，在本实施方式中，作为台阶部，在外壳框体10的下表面的外侧部分设置有凸部16，在散热板1的上表面外周部，在与凸部16相对的位置设置有凹部17。由此，能够确保将外壳框体10与散热板1粘接的粘接剂11的一定体积而保证密封效果。另外，散热板1的侧面与外壳框体10的外侧面为同一面。由此，能够扩大散热范围，因此用于确保外壳安装螺孔15和向冷却器的安装孔14的空余(clearance)范围被扩大。因此，能够使接触热阻降低，使冷却设计的合理性提高。其结果，有利于半导体装置的寿命设计。
实施方式2.
图5是将本发明的实施方式2涉及的半导体装置的外壳框体和散热板的粘接部放大的剖面图。在实施方式1的结构的基础上，在外壳框体10的凸部16设置有槽18，在散热板1的凹部17，在与槽18相对的位置设置有凸起19。
除了与实施方式1同样的效果之外，能够通过外壳框体10的槽18与散热板1的凸起19咬合，从而防止封装材料13的漏出和粘接剂11的挤出，因此生产率提高。另外，外壳框体10的定位精度也提高。
实施方式3.
图6是将本发明的实施方式3涉及的半导体装置的外壳框体和散热板的粘接部放大的剖面图。作为台阶部，在外壳框体10的下表面的外侧部分设置有凹部20，在散热板1的上表面外周部，在与凹部20相对的位置设置有凸部21。除了与实施方式1同样的效果之外，能够通过散热板1的凸部21而防止封装材料13的漏出和粘接剂11的挤出，因此生产率提高。
实施方式4.
图7是将本发明的实施方式4涉及的半导体装置的外壳框体和散热板的粘接部放大的剖面图。作为台阶部，在外壳框体10的下表面的中央部分设置有凸部16，在散热板1的上表面外周部，在与凸部16相对的位置设置有凹部17。由此，除了与实施方式3同样的效果之外，能够降低粘接剂11的涂敷量。另外，外壳框体10的定位精度也提高。
实施方式5.
图8是将本发明的实施方式5涉及的半导体装置的外壳框体和散热板的粘接部放大的剖面图。作为台阶部，在外壳框体10的下表面的外侧部分设置有凸部16，在外壳框体10的下表面的内侧部分设置有倒角22。由于作用于倒角22的表面张力使粘接剂11被向外壳框体10侧拉起，因此能够确保粘接剂11的体积，密封效果提高。另外，由于不再需要对散热板1进行加工，所以能够削减成本，提高散热性。另外，能够得到与实施方式1同样的效果。
实施方式6.
图9是将本发明的实施方式6涉及的半导体装置的外壳框体和散热板的粘接部放大的剖面图。在实施方式5的结构的基础上，作为台阶部，在散热板1的上表面外周部设置有凹部17。另外，在外壳框体10的下表面设置有蓄气部23。除了与实施方式5同样的效果之外，由于粘接剂11内的气泡24排出至蓄气部23而非装置内部，所以能够使绝缘性提高。
实施方式7.
图10是将本发明的实施方式7涉及的半导体装置的外壳框体和散热板的粘接部放大的剖面图。作为台阶部，在外壳框体10的下表面的内侧部分设置有凸部16。另外，在外壳框体10的下表面的外侧部分设置有倒角22。由于粘接剂11内的气泡24排出至装置外侧，所以能够使绝缘性提高。另外，能够得到与实施方式1同样的效果。
实施方式8.
图11是将本发明的实施方式8涉及的半导体装置的外壳框体和散热板的粘接部放大的剖面图。在实施方式7的结构的基础上，在外壳框体10的下表面设置有蓄气部23。粘接剂11内的气泡24排出至装置外侧或者蓄气部23，从而能够使绝缘性提高。
此外，半导体芯片8是由硅形成的IGBT或者二极管，但也可以是由宽带隙半导体形成的SiC-MOSFET或者SiC-SBD。宽带隙半导体例如是碳化硅、氮化镓类材料或者金刚石。由上述这样的宽带隙半导体形成的功率半导体元件，由于耐电压性、容许电流密度高，因此能够小型化。通过使用该实现了小型化的元件，从而能够使组装有该元件的半导体装置也小型化。另外，由于元件的耐热性高，因此能够使散热器的散热鳍片小型化，能够将水冷部空冷化，因而能够进一步将半导体装置小型化。另外，由于元件的电力损耗低且高效，所以能够使半导体装置高效化。
标号的说明
1散热板，2配线基板，8半导体芯片，10外壳框体，11粘接剂，13封装材料，16、21凸部，17、20凹部，18槽，19凸起，22倒角，23蓄气部

Claims (10)

1.一种半导体装置，其特征在于，具备：
散热板；
配线基板，其设置于所述散热板之上；
半导体芯片，其设置于所述配线基板之上；
外壳框体，其以将所述配线基板以及所述半导体芯片包围的方式设置于所述散热板之上；
粘接剂，其将所述外壳框体的下表面与所述散热板的上表面外周部粘接；以及
封装材料，其填充至所述外壳框体内，覆盖所述配线基板以及所述半导体芯片，
在所述外壳框体的所述下表面与所述散热板的所述上表面外周部的至少一者设置台阶部，
所述散热板的侧面与所述外壳框体的外侧面是同一面。
2.根据权利要求1所述的半导体装置，其特征在于，
作为所述台阶部，在所述外壳框体的所述下表面的外侧部分设置有凸部，在所述散热板的所述上表面外周部，在与所述凸部相对的位置设置有凹部。
3.根据权利要求2所述的半导体装置，其特征在于，
作为所述台阶部，在所述外壳框体的所述凸部设置有槽，在所述散热板的所述凹部，在与所述槽相对的位置设置有凸起。
4.根据权利要求1所述的半导体装置，其特征在于，
作为所述台阶部，在所述外壳框体的所述下表面的外侧部分设置有凹部，在所述散热板的所述上表面外周部，在与所述凹部相对的位置设置有凸部。
5.根据权利要求1所述的半导体装置，其特征在于，
作为所述台阶部，在所述外壳框体的所述下表面的中央部分设置有凸部，在所述散热板的所述上表面外周部，在与所述凸部相对的位置设置有凹部。
6.根据权利要求1所述的半导体装置，其特征在于，
作为所述台阶部，在所述外壳框体的所述下表面的外侧部分设置有凸部，
在所述外壳框体的所述下表面的内侧部分设置有倒角。
7.根据权利要求6所述的半导体装置，其特征在于，
作为所述台阶部，在所述散热板的所述上表面外周部设置有凹部，
在所述外壳框体的所述下表面设置有蓄气部。
8.根据权利要求1所述的半导体装置，其特征在于，
作为所述台阶部，在所述外壳框体的所述下表面的内侧部分设置有凸部，
在所述外壳框体的所述下表面的外侧部分设置有倒角。
9.根据权利要求8所述的半导体装置，其特征在于，
在所述外壳框体的所述下表面设置有蓄气部。
10.根据权利要求1至9中任一项所述的半导体装置，其特征在于，
所述半导体芯片由宽带隙半导体形成。
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DE112016007241B4 (de) 2021-08-19
JP6699742B2 (ja) 2020-05-27
CN109716516B (zh) 2023-05-23
WO2018055667A1 (ja) 2018-03-29
DE112016007241T5 (de) 2019-07-04
US10748830B2 (en) 2020-08-18
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