JP2014165348A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2014165348A JP2014165348A JP2013035300A JP2013035300A JP2014165348A JP 2014165348 A JP2014165348 A JP 2014165348A JP 2013035300 A JP2013035300 A JP 2013035300A JP 2013035300 A JP2013035300 A JP 2013035300A JP 2014165348 A JP2014165348 A JP 2014165348A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- dummy substrate
- semiconductor
- semiconductor device
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 205
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 26
- 230000003647 oxidation Effects 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 238000000137 annealing Methods 0.000 claims abstract description 12
- 230000001590 oxidative effect Effects 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 230000002829 reductive effect Effects 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 50
- 239000000047 product Substances 0.000 description 49
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 49
- 239000007789 gas Substances 0.000 description 48
- 239000011229 interlayer Substances 0.000 description 18
- 239000010410 layer Substances 0.000 description 18
- 238000009826 distribution Methods 0.000 description 12
- 239000012535 impurity Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000009257 reactivity Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
Abstract
【解決手段】本発明の半導体装置の製造方法は、(b)ダミー基板22の裏面と複数の半導体基板31〜35の裏面に、熱酸化処理または熱処理の温度に耐え、酸化または還元ガス種のダミー基板および前記複数の半導体基板の裏面に到達する量が十分少なくなる膜厚を有する無機膜22f、31f〜35fを形成する工程と、(c)ダミー基板22と複数の半導体基板31〜35を表面を同方向に向け互いに間隔を空けて積層するように配置する工程と、(d)工程(b)および(c)の後、酸化ガス雰囲気又は還元ガス雰囲気内で半導体基板31〜35表面の熱酸化処理又はポストアニールを行う工程と、を備える。
【選択図】図1
Description
図10は、前提技術の半導体装置の製造方法を示す図であり、熱処理工程における半導体基板の配置を示している。図10において、熱処理を行う半導体基板である製品基板31〜35は、炉20内のボート21において互いに隙間を空け垂直方向に積層して設置される。そのうち最上段に設置された製品基板31の上には、隙間を空けてダミー基板22が設置される。ここではダミー基板22の代わりにモニター基板が設置されても良いし、ダミー基板22がモニター基板を兼ねても良い。
本発明の半導体装置の製造方法を、MOSFETのゲート絶縁膜形成工程に適用した例を以下に説明する。製品基板である半導体基板はSiC基板とするが、Si,GaN,GaAs等、他の基板でも良い。また、ダミー基板の材料は半導体基板と同じでも異なっていても良い。さらに、作成するデバイスはMOSFETの他、pnダイオード、SBD(Schottky Barrier diode),BJT(Bipolar Junction Transistor),JFET(Junction FET),IGBT(Insulated Gate Bipolar Transistor)等、他のデバイスでも良い。また、ゲート絶縁膜形成工程の他、メタル電極の熱処理工程等、バッチ式装置で熱処理する他の工程に本発明を適用しても良い。
図3〜9は、MOSFET100の製造工程を示す断面図である。以下、図3〜9に沿ってMOSFET100の製造工程を説明する。
熱処理を行うに際して、予めダミー基板22の裏面には無機膜22fを形成したが、表面には無機膜を形成しなくても良い。そうすれば、ダミー基板22の表面を用いて膜厚等のモニターが可能であり、ダミー基板22をモニター基板としても用いることが出来る。この場合、ダミー基板22とは別途のモニター基板を同一バッチ式装置内に設置する必要がないので、処理枚数が増え生産性が向上する。
本発明の半導体装置の製造方法は、(a)ダミー基板22および複数の半導体基板31〜35を準備する工程と、(b)ダミー基板22の裏面と複数の製品基板31〜35(半導体基板)の裏面に、熱酸化処理または熱処理の温度に耐え、酸化または還元ガス種の複数の半導体基板の裏面に到達する量が十分少なくなる膜厚を有する無機膜22f、31f〜35fを形成する工程と、(c)ダミー基板22と複数の製品基板31〜35を表面を同方向に向け互いに間隔を空けて積層するように配置する工程と、(d)工程(b)および(c)の後、酸化ガス雰囲気又は還元ガス雰囲気内で半導体基板31〜35表面の熱酸化処理又はポストアニールを行う工程と、を備える。ダミー基板22および製品基板31〜35夫々の裏面に無機膜を形成することで、加熱処理時の雰囲気ガスが各基板22,31〜35の裏面で消費されないので、製品基板31〜35の表面における雰囲気ガスの消費量が均一になり、電気的特性が均一になる。
Claims (6)
- (a)ダミー基板および複数の半導体基板を準備する工程と、
(b)前記ダミー基板の裏面と前記複数の半導体基板の裏面に、熱酸化処理または熱処理の温度に耐え、酸化または還元ガス種の前記ダミー基板および前記複数の半導体基板の裏面に到達する量が十分少なくなる膜厚を有する無機膜を形成する工程と、
(c)前記ダミー基板と前記複数の半導体基板を表面を同方向に向け互いに間隔を空けて積層するように配置する工程と、
(d)前記工程(b)および(c)の後、酸化ガス雰囲気又は還元ガス雰囲気内で前記半導体基板表面の熱酸化処理又はポストアニールを行う工程と、
を備える半導体装置の製造方法。 - 前記工程(b)は、前記無機膜として、熱酸化膜、CVD酸化膜、金属酸化膜、若しくはPSGのいずれかの絶縁膜、又は窒化膜を形成する工程である、
請求項1に記載の半導体装置の製造方法。 - 前記ダミー基板は前記半導体基板と異なる材料の基板である、
請求項1又は2に記載の半導体装置の製造方法。 - 前記ダミー基板は前記半導体基板と同一材料の基板であり、
前記半導体基板の表面と裏面では熱酸化速度が異なる、
請求項1又は2に記載の半導体装置の製造方法。 - 前記工程(a)は、前記ダミー基板の裏面にのみ前記無機膜を形成する工程である、
請求項1〜4のいずれかに記載の半導体装置の製造方法。 - 前記工程(a)は、石英ガラスからなる前記ダミー基板を準備する工程であり、
前記工程(b)に代えて、
(e)前記複数の半導体基板の裏面に、熱酸化処理または熱処理の温度に耐え、酸化または還元ガス種の前記複数の半導体基板の裏面に到達する量が十分少なくなる膜厚を有する無機膜を形成する工程を備える、
請求項1〜5のいずれかに記載の半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013035300A JP5955246B2 (ja) | 2013-02-26 | 2013-02-26 | 半導体装置の製造方法 |
US14/071,406 US9159585B2 (en) | 2013-02-26 | 2013-11-04 | Method of manufacturing semiconductor device |
DE102013225320.6A DE102013225320B4 (de) | 2013-02-26 | 2013-12-09 | Verfahren zum Herstellen einer Halbleitervorrichtung |
KR1020140015775A KR101597602B1 (ko) | 2013-02-26 | 2014-02-12 | 반도체장치의 제조방법 |
CN201410067436.2A CN104008969B (zh) | 2013-02-26 | 2014-02-26 | 半导体装置的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013035300A JP5955246B2 (ja) | 2013-02-26 | 2013-02-26 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014165348A true JP2014165348A (ja) | 2014-09-08 |
JP5955246B2 JP5955246B2 (ja) | 2016-07-20 |
Family
ID=51349534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013035300A Active JP5955246B2 (ja) | 2013-02-26 | 2013-02-26 | 半導体装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9159585B2 (ja) |
JP (1) | JP5955246B2 (ja) |
KR (1) | KR101597602B1 (ja) |
CN (1) | CN104008969B (ja) |
DE (1) | DE102013225320B4 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017152699A (ja) * | 2014-12-03 | 2017-08-31 | インフィネオン テクノロジーズ アーゲーInfineon Technologies Ag | トレンチ電極を備えた半導体デバイス |
JP2019145570A (ja) * | 2018-02-16 | 2019-08-29 | トヨタ自動車株式会社 | 炭化珪素半導体装置の製造方法、及び、炭化珪素半導体装置 |
US10586845B1 (en) | 2018-11-16 | 2020-03-10 | Infineon Technologies Ag | SiC trench transistor device and methods of manufacturing thereof |
US10714609B2 (en) | 2014-12-22 | 2020-07-14 | Infineon Technologies Ag | Semiconductor device with stripe-shaped trench gate structures, transistor mesas and diode mesas |
US10903322B2 (en) | 2018-11-16 | 2021-01-26 | Infineon Technologies Ag | SiC power semiconductor device with integrated body diode |
JP2021015870A (ja) * | 2019-07-11 | 2021-02-12 | 三菱電機株式会社 | SiC半導体装置の製造方法 |
US10950696B2 (en) | 2018-02-22 | 2021-03-16 | Infineon Technologies Ag | Silicon carbide semiconductor component |
US10985248B2 (en) | 2018-11-16 | 2021-04-20 | Infineon Technologies Ag | SiC power semiconductor device with integrated Schottky junction |
US11011606B2 (en) | 2018-10-08 | 2021-05-18 | Infineon Technologies Ag | Semiconductor component having a SiC semiconductor body and method for producing a semiconductor component |
US11101343B2 (en) | 2018-05-07 | 2021-08-24 | Infineon Technologies Ag | Silicon carbide field-effect transistor including shielding areas |
DE102022118209A1 (de) | 2021-07-27 | 2023-02-02 | Mitsubishi Electric Corporation | Verfahren zum Herstellen einer Halbleitervorrichtung und Halbleiterherstellungseinrichtung |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022075362A (ja) * | 2020-11-06 | 2022-05-18 | 東京エレクトロン株式会社 | 熱処理装置及びダミー基板の処理方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS586136A (ja) * | 1981-07-02 | 1983-01-13 | Nec Corp | 半導体ウエ−ハの熱処理法 |
JPH03224228A (ja) * | 1990-01-30 | 1991-10-03 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0799157A (ja) * | 1993-09-29 | 1995-04-11 | Hitachi Ltd | 成膜方法および装置 |
JP2000260718A (ja) * | 1999-03-10 | 2000-09-22 | Sony Corp | ポリシリコンcvd膜の成膜方法 |
JP2010087019A (ja) * | 2008-09-29 | 2010-04-15 | Seiko Epson Corp | 半導体装置の製造方法、熱酸化処理方法及び熱酸化処理装置 |
JP2010147265A (ja) * | 2008-12-19 | 2010-07-01 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
US20120252225A1 (en) * | 2011-03-29 | 2012-10-04 | Chunlong Li | Semiconductor fabrication method |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07254591A (ja) | 1994-03-16 | 1995-10-03 | Toshiba Corp | 熱処理装置 |
TW538499B (en) * | 2002-06-10 | 2003-06-21 | Taiwan Semiconductor Mfg | Boat with constant backside emissivity to wafers |
KR100935141B1 (ko) | 2002-09-27 | 2010-01-06 | 가부시키가이샤 히다치 고쿠사이 덴키 | 열처리 장치, 반도체 장치의 제조 방법, 기판의 제조 방법, simox 기판의 제조 방법, 지지부 및 기판 지지체 |
JP2004152920A (ja) * | 2002-10-30 | 2004-05-27 | Fujitsu Ltd | 半導体装置の製造方法及び半導体製造工程の管理方法 |
TWI264758B (en) * | 2004-03-11 | 2006-10-21 | Hitachi Int Electric Inc | A substrate processing apparatus and a semiconductor device manufacturing method use the same |
US7972703B2 (en) | 2005-03-03 | 2011-07-05 | Ferrotec (Usa) Corporation | Baffle wafers and randomly oriented polycrystalline silicon used therefor |
JP2008300643A (ja) * | 2007-05-31 | 2008-12-11 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法 |
JP5246843B2 (ja) | 2007-11-07 | 2013-07-24 | 株式会社日立国際電気 | 基板処理装置、ベーキング方法及び半導体装置の製造方法 |
CN102723272B (zh) * | 2011-03-29 | 2015-02-25 | 中国科学院微电子研究所 | 半导体制造方法 |
-
2013
- 2013-02-26 JP JP2013035300A patent/JP5955246B2/ja active Active
- 2013-11-04 US US14/071,406 patent/US9159585B2/en active Active
- 2013-12-09 DE DE102013225320.6A patent/DE102013225320B4/de active Active
-
2014
- 2014-02-12 KR KR1020140015775A patent/KR101597602B1/ko active IP Right Grant
- 2014-02-26 CN CN201410067436.2A patent/CN104008969B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS586136A (ja) * | 1981-07-02 | 1983-01-13 | Nec Corp | 半導体ウエ−ハの熱処理法 |
JPH03224228A (ja) * | 1990-01-30 | 1991-10-03 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0799157A (ja) * | 1993-09-29 | 1995-04-11 | Hitachi Ltd | 成膜方法および装置 |
JP2000260718A (ja) * | 1999-03-10 | 2000-09-22 | Sony Corp | ポリシリコンcvd膜の成膜方法 |
JP2010087019A (ja) * | 2008-09-29 | 2010-04-15 | Seiko Epson Corp | 半導体装置の製造方法、熱酸化処理方法及び熱酸化処理装置 |
JP2010147265A (ja) * | 2008-12-19 | 2010-07-01 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
US20120252225A1 (en) * | 2011-03-29 | 2012-10-04 | Chunlong Li | Semiconductor fabrication method |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017152699A (ja) * | 2014-12-03 | 2017-08-31 | インフィネオン テクノロジーズ アーゲーInfineon Technologies Ag | トレンチ電極を備えた半導体デバイス |
US10700192B2 (en) | 2014-12-03 | 2020-06-30 | Infineon Technologies Ag | Semiconductor device having a source electrode contact trench |
US10714609B2 (en) | 2014-12-22 | 2020-07-14 | Infineon Technologies Ag | Semiconductor device with stripe-shaped trench gate structures, transistor mesas and diode mesas |
JP2019145570A (ja) * | 2018-02-16 | 2019-08-29 | トヨタ自動車株式会社 | 炭化珪素半導体装置の製造方法、及び、炭化珪素半導体装置 |
JP7154772B2 (ja) | 2018-02-16 | 2022-10-18 | 株式会社豊田中央研究所 | 炭化珪素半導体装置の製造方法 |
US10950696B2 (en) | 2018-02-22 | 2021-03-16 | Infineon Technologies Ag | Silicon carbide semiconductor component |
US11742391B2 (en) | 2018-02-22 | 2023-08-29 | Infineon Technologies Ag | Semiconductor component having a diode structure in a SiC semiconductor body |
US11101343B2 (en) | 2018-05-07 | 2021-08-24 | Infineon Technologies Ag | Silicon carbide field-effect transistor including shielding areas |
US11626477B2 (en) | 2018-05-07 | 2023-04-11 | Infineon Technologies Ag | Silicon carbide field-effect transistor including shielding areas |
US11600701B2 (en) | 2018-10-08 | 2023-03-07 | Infineon Technologies Ag | Semiconductor component having a SiC semiconductor body |
US11011606B2 (en) | 2018-10-08 | 2021-05-18 | Infineon Technologies Ag | Semiconductor component having a SiC semiconductor body and method for producing a semiconductor component |
US10985248B2 (en) | 2018-11-16 | 2021-04-20 | Infineon Technologies Ag | SiC power semiconductor device with integrated Schottky junction |
US11462611B2 (en) | 2018-11-16 | 2022-10-04 | Infineon Technologies Ag | SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof |
US10586845B1 (en) | 2018-11-16 | 2020-03-10 | Infineon Technologies Ag | SiC trench transistor device and methods of manufacturing thereof |
US10903322B2 (en) | 2018-11-16 | 2021-01-26 | Infineon Technologies Ag | SiC power semiconductor device with integrated body diode |
US10896952B2 (en) | 2018-11-16 | 2021-01-19 | Infineon Technologies Ag | SiC device and methods of manufacturing thereof |
JP7236947B2 (ja) | 2019-07-11 | 2023-03-10 | 三菱電機株式会社 | SiC半導体装置の製造方法 |
JP2021015870A (ja) * | 2019-07-11 | 2021-02-12 | 三菱電機株式会社 | SiC半導体装置の製造方法 |
DE102022118209A1 (de) | 2021-07-27 | 2023-02-02 | Mitsubishi Electric Corporation | Verfahren zum Herstellen einer Halbleitervorrichtung und Halbleiterherstellungseinrichtung |
Also Published As
Publication number | Publication date |
---|---|
CN104008969A (zh) | 2014-08-27 |
US20140242815A1 (en) | 2014-08-28 |
US9159585B2 (en) | 2015-10-13 |
CN104008969B (zh) | 2017-06-16 |
DE102013225320B4 (de) | 2019-06-19 |
KR20140106402A (ko) | 2014-09-03 |
DE102013225320A1 (de) | 2014-08-28 |
JP5955246B2 (ja) | 2016-07-20 |
KR101597602B1 (ko) | 2016-02-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5955246B2 (ja) | 半導体装置の製造方法 | |
US20150287598A1 (en) | Semiconductor device and method for manufacturing same | |
JPWO2010125661A1 (ja) | 半導体装置及びその製造方法 | |
JP5889171B2 (ja) | 炭化珪素半導体装置及びその製造方法 | |
US9613809B2 (en) | Method of manufacturing silicon carbide semiconductor device | |
US11094790B2 (en) | Silicon carbide semiconductor device | |
JP2015103631A (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
JP2012160485A (ja) | 半導体装置とその製造方法 | |
JPWO2016013471A1 (ja) | 半導体装置及び半導体装置の製造方法 | |
JP6208106B2 (ja) | 半導体装置及びその製造方法 | |
JP2023080193A (ja) | トレンチ型半導体装置の製造方法 | |
JP5316428B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
WO2015001863A1 (ja) | 炭化珪素半導体装置の製造方法 | |
JP5236787B2 (ja) | 窒化物半導体装置およびその製造方法 | |
JP6991476B2 (ja) | 半導体装置 | |
JP5526493B2 (ja) | トレンチゲート型半導体装置およびその製造方法 | |
JP2014127660A (ja) | 炭化珪素ダイオード、炭化珪素トランジスタおよび炭化珪素半導体装置の製造方法 | |
US10032894B2 (en) | Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device | |
JP6690333B2 (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
JP2016058660A (ja) | 半導体装置 | |
JP2007053226A (ja) | 半導体装置およびその製造方法 | |
JP2017147471A (ja) | 半導体装置 | |
JP6024117B2 (ja) | 半導体装置の製造方法 | |
US20150091021A1 (en) | Method of Manufacturing Semiconductor Device and the Semiconductor Device | |
JP5329606B2 (ja) | 窒化物半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150430 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160217 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160223 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160415 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160517 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160614 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5955246 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |