JP2019145570A - 炭化珪素半導体装置の製造方法、及び、炭化珪素半導体装置 - Google Patents
炭化珪素半導体装置の製造方法、及び、炭化珪素半導体装置 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 141
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 141
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 88
- 230000003647 oxidation Effects 0.000 claims abstract description 24
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 24
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 36
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 abstract 4
- 238000009413 insulation Methods 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 44
- 229910052757 nitrogen Inorganic materials 0.000 description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 18
- 229910052799 carbon Inorganic materials 0.000 description 16
- 210000000746 body region Anatomy 0.000 description 12
- 239000002344 surface layer Substances 0.000 description 8
- 238000005121 nitriding Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
Description
炭化珪素は、面方位が異なると原子配列が変わることから、非極性面(m面又はa面)と極性面(Si面又はC面)を有する。図5に示されるように、非極性面及び極性面のいずれの場合も、本実施例は、従来構造よりもCVヒステリシスが低下することが確認された。なお、図5に示すデータでは、本実施例の絶縁ゲート30については、酸化膜32aの厚みT1が10nmである。
図6に、NO直接酸化の製造条件(一酸化窒素のガス濃度及び熱酸化温度)を変更した場合の炭化珪素基板10と酸化膜32aの界面の窒素濃度とCVヒステリシスの関係を示す。窒素濃度は、二次イオン質量分析法を用いて測定した。図6に示すように、いずれの製造条件においても、本実施例の絶縁ゲート30のCVヒステリシスは、従来構造よりも低下することが確認された。さらに、一酸化窒素ガスのガス濃度が10%以上であり、熱酸化温度が1300℃以上の製造条件の場合、本実施例の界面窒素濃度は従来構造に比して大きく低下することが確認された。このように、NO直接酸化を用いた技術では、炭化珪素基板10のシリコンのダングリングボンドに必要な窒素が過不足なく取り込まれて、炭化珪素基板10とゲート絶縁膜32の界面に過剰な窒素が導入されないことが示唆された。なお、図6に示すデータでは、本実施例の絶縁ゲート30については、酸化膜32aの厚みT1が10nmである。
図7に、炭化珪素基板10及びゲート絶縁膜32の深さ方向の窒素濃度のプロファイルを示す。約78nmの深さが炭化珪素基板10(図7中にSiCと表記)とゲート絶縁膜32(図7中にSiO2と表記)の界面に相当する。図6の結果と同様に、図7に示すデータにおいても、本実施例は、炭化珪素基板10及びゲート絶縁膜32の界面近傍の深さ方向の窒素濃度が従来構造よりも低下することが確認された。なお、図7に示すデータでは、本実施例の絶縁ゲート30については、酸化膜32aの厚みT1が10nmである。
図8に、Terman法を用いて測定した界面準位密度を示す。界面準位密度は、チャネルを走行するキャリアの移動度と相関があるとされている。図8に示されるように、本実施例の界面準位密度は従来構造と同等であることが確認された。このように、NO直接酸化を用いた技術でも、炭化珪素基板10とゲート絶縁膜32の界面の欠陥が十分に低下できることが示唆された。なお、図8に示すデータでは、本実施例の絶縁ゲート30については、酸化膜32aの厚みT1が10nmである。
図9に、測定されたフラットバンド電圧を示す。フラットバンド電圧は、閾値電圧と相関があるとされている。図9に示されるように、本実施例のフラットバンド電圧は従来構造と同等であることが確認された。なお、図9に示すデータでは、本実施例の絶縁ゲート30については、酸化膜32aの厚みT1が10nmである。
図10に、ゲート電極34に正バイアスストレスを印加した前後の閾値電圧の変動量を示す。印加した正バイアスストレスは、25Vである。図10に示されるように、本実施例の閾値電圧の変動量は従来構造よりも小さいことが確認された。なお、本実施例については、界面準位が2.1×1012cm-2eV-1であり、移動度が10cm2/VSである。従来構造については、界面準位が2.1×1012cm-2eV-1であり、移動度が9.8cm2/VSである。このように、界面準位と移動度については、本実施例と従来構造に相違がない。一方、本実施例では、正バイアスストレスに対する閾値電圧の変動量が抑えられることが確認された。
図11に、ゲート電極34に負バイアスストレスを印加した前後の閾値電圧の変動量を示す。印加した負バイアスストレスは、−10Vである。図11に示されるように、本実施例の閾値電圧の変動量は極めて小さいことが確認された。上記したように、炭化珪素基板とゲート絶縁膜の界面に導入された窒素は、正孔トラップの起源となり、ゲート電極に負バイアスストレスを印加した前後の閾値電圧の変動量を増加させることが懸念される。一方、NO直接酸化を用いた技術では、炭化珪素基板10とゲート絶縁膜32の界面に過剰な窒素が導入されない。これにより、負バイアスストレスに対する閾値電圧の変動量が抑えられたことが示唆された。
図12に、キャパシタンストランジェント法を用いて測定した炭化珪素基板10と酸化膜32aの界面近傍の酸化膜32a内の電荷のトラップ面密度を示す。図12に示されるように、本実施例のトラップ面密度は従来構造よりも小さいことが確認された。
(1)NO直接酸化を用いた技術により、酸化膜32a内の電荷トラップが低下され、これにより、正バイアスストレスに対する閾値電圧の変動量が抑えられる。
(2)NO直接酸化を用いた技術により、過剰な窒素がゲート絶縁膜32に導入されることが抑えられ、これにより、負バイアスストレスに対する閾値電圧の変動量が抑えられる。
(3)炭化珪素基板10と酸化膜32aの界面準位密度は、従来構造と同等であり、欠陥の密度が十分に低い。
10:炭化珪素基板
11:ドレイン領域
12:ドリフト領域
12a:アパーチャ部
13:ボディ領域
14:ソース領域
15:ボディコンタクト領域
22:ドレイン電極
24:ソース電極
30:絶縁ゲート
32:ゲート絶縁膜
32a:酸化膜
32b:堆積膜
34:ゲート電極
Claims (11)
- 炭化珪素半導体装置の製造方法であって、
炭化珪素基板上にゲート絶縁膜を形成するゲート絶縁膜形成工程と、
前記ゲート絶縁膜上にゲート電極を形成するゲート電極形成工程と、を備えており、
前記ゲート絶縁膜形成工程は、
窒素雰囲気下で前記炭化珪素基板を熱酸化し、前記炭化珪素基板上に酸化膜を形成する酸化膜形成工程、を有する、炭化珪素半導体装置の製造方法。 - 前記酸化膜の厚みが、4nm以上であって45nm以下である、請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記酸化膜形成工程は、一酸化窒素ガスを含む窒素雰囲気下で実施される、請求項1又は2に記載の炭化珪素半導体装置の製造方法。
- 前記酸化膜形成工程は、前記一酸化窒素ガスのガス濃度が10%以上であり、熱酸化温度が1300℃以上で実施される、請求項3に記載の炭化珪素半導体装置の製造方法。
- 前記ゲート絶縁膜形成工程はさらに、
前記酸化膜上に絶縁体の堆積膜を形成する堆積膜形成工程、を有する、請求項1〜4のいずれか一項に記載の炭化珪素半導体装置の製造方法。 - 前記堆積膜形成工程では、化学気相成長法又は原子層堆積法が用いられる、請求項5に記載の炭化珪素半導体装置の製造方法。
- 前記堆積膜は、前記酸化膜よりも誘電率が高い材料である、請求項5又は6に記載の炭化珪素半導体装置の製造方法。
- 炭化珪素半導体装置であって、
炭化珪素基板と、
前記炭化珪素基板上に設けられているゲート絶縁膜と、
前記ゲート絶縁膜上に設けられているゲート電極と、を備えており、
前記ゲート絶縁膜は、
前記炭化珪素基板上に形成されている酸化膜と、
前記酸化膜上に形成されている堆積膜と、を有する炭化珪素半導体装置。 - 前記酸化膜の厚みは、前記堆積膜の厚みよりも薄い、請求項8に記載の炭化珪素半導体装置。
- 前記酸化膜の厚みが、4nm以上であって45nm以下である、請求項9に記載の炭化珪素半導体装置。
- 前記堆積膜は、前記酸化膜よりも誘電率が高い材料である、請求項8〜10のいずれか一項に記載の炭化珪素半導体装置。
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