JP2014140075A - 磁気トンネル接合デバイスおよび製造 - Google Patents
磁気トンネル接合デバイスおよび製造 Download PDFInfo
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Abstract
【解決手段】磁気トンネル接合デバイスおよび製造方法が開示される。特定の実施形態では、方法は、磁気トンネル接合構造のフリー層(110)上にキャップ材料(112)を堆積させてキャップ層を形成するステップと、キャップ材料の一部分を酸化して酸化された材料の層を形成するステップを含む。
【選択図】図1
Description
101 磁気トンネル接合(MTJ)デバイス
102 ビット線アクセス電極
103 シード層
104 反強磁性(AFM)ピン止め層
106 ピン層
108 トンネルバリア層
110 フリー層
112 キャップ層
114 アクセストランジスタ電極
116 アクセストランジスタ
118 ビット線
119 ワード線
120 ソースコンタクト
122 読み出し動作
124 磁気モーメント
125 磁気モーメント
126 基板
130 ドレイン領域
132 ソース領域
140 距離d1
142 距離d2
190 金属部分
192 酸化された金属部分
200 メモリシステム
202 トップコンタクト
203 シード層
204 反強磁性(AFM)ピン止め層
206 ピン層
208 トンネルバリア層
210 フリー層
212 キャップ層
218 ボトムコンタクト
222 ビット線
224 磁気モーメント
225 磁気モーメント
228 アクセストランジスタ
230 ワード線
232 ソース線
280 メモリアレイ
282 メモリセル
284 センスアンプ
286 アンプ出力
290 第1の材料の第1の層
292 第2の材料の第2の層
294 第3の層
500 製造プロセス
502 物理的なデバイス情報
504 ユーザーインターフェイス
506 研究用コンピュータ
508 プロセッサ
510 メモリ
512 ライブラリファイル
514 設計用コンピュータ
516 プロセッサ
518 メモリ
520 EDAツール
522 回路設計情報
524 ユーザーインターフェイス
526 GDSIIファイル
528 製造プロセス
530 マスク製造機
532 マスク
534 ウェハ
536 ダイ
538 パッケージングプロセス
540 パッケージ
542 PCB設計情報
544 ユーザーインターフェイス
546 コンピュータ
548 プロセッサ
550 メモリ
552 GERBERファイル
554 基板組み立てプロセス
556 PCB
558 プリント回路アセンブリ(PCA)
560 製品製造プロセス
562 電子機器
564 電子機器
Claims (20)
- 磁気トンネル接合デバイスであって、
バリア層と、
フリー層と、
キャップ層であって、前記フリー層が前記バリア層と前記キャップ層の間に位置し、傾斜層を含むキャップ層と、を備える磁気トンネル接合デバイス
を備え、
前記傾斜層は、
酸化された金属の第1の濃度と比較して大きい金属の第1の濃度を有する第1の側と、
第1の側とは反対側に位置し、金属の第2の濃度と比較して大きい酸化された金属の第2の濃度を有する第2の側とを含む、装置。 - 前記金属がマグネシウムを含み、前記酸化された金属が酸化マグネシウムを含む、請求項1に記載の装置。
- 第1の金属部分の前記第1の側が前記フリー層と直接接触し、第1の金属部分の第2の側が酸化された金属部分と接触する、請求項1に記載の装置。
- ピン層をさらに備える、請求項1に記載の装置。
- 少なくとも1つの半導体ダイに組み込まれた、請求項1に記載の装置。
- 前記磁気トンネル接合デバイスを含むメモリアレイをさらに備える、請求項1に記載の装置。
- セットトップボックス、音楽プレーヤー、ビデオプレーヤー、娯楽装置、ナビゲーション機器、通信機器、携帯情報端末(PDA)、固定位置データユニット、およびコンピュータからなる群から選択される機器をさらに備え、前記メモリアレイが前記機器に組み込まれる、請求項6に記載の装置。
- 前記第1の側が前記フリー層と前記第2の側との間に位置する、請求項1に記載の装置。
- 閾値電流密度を超えるスピン分極電流によってプログラム可能な磁気モーメントの方向として、データ値を保存する手段と、
バリアを通る伝導電子の量子力学的トンネル効果によって、前記保存する手段に前記伝導電子を与えるための、トンネルバリア手段と、
スピンポンピング効果を低減するためのキャップ手段であって、前記キャップ手段が傾斜層を含み、前記保存する手段が前記トンネルバリア手段と前記キャップ手段の間に位置するキャップ手段と
を備え、
前記傾斜層は、
酸化された金属の第1の濃度と比較して大きい金属の第1の濃度を有する第1の側と、
第1の側とは反対側に位置し、金属の第2の濃度と比較して大きい酸化された金属の第2の濃度を有する第2の側とを含む、装置。 - 少なくとも1つの半導体ダイに組み込まれた、請求項9に記載の装置。
- 前記保存する手段、前記トンネルバリア手段、前記キャップ手段を含むメモリアレイをさらに備える、請求項9に記載の装置。
- セットトップボックス、音楽プレーヤー、ビデオプレーヤー、娯楽装置、ナビゲーション機器、通信機器、携帯情報端末(PDA)、固定位置データユニット、およびコンピュータからなる群から選択される機器をさらに備え、前記メモリアレイが前記機器に組み込まれる、請求項11に記載の装置。
- 磁気トンネル接合デバイスであって、
フリー層と、
前記フリー層に隣接するバリア層と、
前記フリー層に隣接するキャップ層と、を備える磁気トンネル接合デバイス
を備え、
前記キャップ層は、
第1の材料の第1の層と、
第2の材料の第2の層であって、前記第1の層が前記フリー層から第1の距離に位置し、前記第2の層が前記フリー層から第2の距離に位置し、前記第2の距離が前記第1の距離よりも大きい、第2の層と、
前記第1の層と前記フリー層との間に介在するバッファ層と、
を備える、装置。 - 前記バッファ層がタンタル、窒化タンタル、ハフニウム、ジルコニウム、マグネシウム、またはそれらの組み合わせを含む、請求項13に記載の装置。
- 前記バッファ層が実質的に非磁性の金属材料の層を含む、請求項13に記載の装置。
- 前記実質的に非磁性の金属材料がタンタルを含む、請求項15に記載の装置。
- 前記バリア層が前記フリー層の第1の側に隣接し、前記キャップ層が前記フリー層の第2の側に隣接し、前記第2の側が前記第1の側の反対側に位置する、請求項13に記載の装置。
- 磁気トンネル接合デバイスが少なくとも1つの半導体ダイに組み込まれた、請求項13に記載の装置。
- 前記磁気トンネル接合デバイスを含むメモリアレイをさらに備える、請求項13に記載の装置。
- セットトップボックス、音楽プレーヤー、ビデオプレーヤー、娯楽装置、ナビゲーション機器、通信機器、携帯情報端末(PDA)、固定位置データユニット、およびコンピュータからなる群から選択される機器をさらに備え、前記メモリアレイが前記機器に組み込まれる、請求項19に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US12/396,359 US8120126B2 (en) | 2009-03-02 | 2009-03-02 | Magnetic tunnel junction device and fabrication |
US12/396,359 | 2009-03-02 |
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JP2011551324A Division JP5832301B2 (ja) | 2009-03-02 | 2010-03-02 | 磁気トンネル接合デバイスおよび製造 |
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JP2014140075A true JP2014140075A (ja) | 2014-07-31 |
JP5795659B2 JP5795659B2 (ja) | 2015-10-14 |
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JP2011551324A Active JP5832301B2 (ja) | 2009-03-02 | 2010-03-02 | 磁気トンネル接合デバイスおよび製造 |
JP2014085713A Expired - Fee Related JP5795659B2 (ja) | 2009-03-02 | 2014-04-17 | 磁気トンネル接合デバイスおよび製造 |
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US (3) | US8120126B2 (ja) |
EP (1) | EP2404332B1 (ja) |
JP (2) | JP5832301B2 (ja) |
KR (1) | KR101251363B1 (ja) |
CN (1) | CN102334207B (ja) |
TW (1) | TW201115802A (ja) |
WO (1) | WO2010101862A1 (ja) |
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JP5832301B2 (ja) | 2015-12-16 |
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WO2010101862A1 (en) | 2010-09-10 |
US8580583B2 (en) | 2013-11-12 |
JP2012518910A (ja) | 2012-08-16 |
KR101251363B1 (ko) | 2013-04-05 |
US20140038312A1 (en) | 2014-02-06 |
CN102334207B (zh) | 2016-09-21 |
KR20110133595A (ko) | 2011-12-13 |
US8120126B2 (en) | 2012-02-21 |
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