JP2014123740A - 貫通電極を有する半導体素子、その製造方法及び貫通電極を有するメモリ素子を含むメモリシステム - Google Patents
貫通電極を有する半導体素子、その製造方法及び貫通電極を有するメモリ素子を含むメモリシステム Download PDFInfo
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- JP2014123740A JP2014123740A JP2013264445A JP2013264445A JP2014123740A JP 2014123740 A JP2014123740 A JP 2014123740A JP 2013264445 A JP2013264445 A JP 2013264445A JP 2013264445 A JP2013264445 A JP 2013264445A JP 2014123740 A JP2014123740 A JP 2014123740A
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Abstract
【解決手段】
半導体素子の伝導性ビアは、基板を貫通して垂直方向に伸張され、前記伝導性ビアの第1端部は、前記基板の第1面を通過して伸張されることによって、前記基板の第1面に対して前記垂直方向に突出される。絶縁膜が前記伝導性ビアの第1端部と前記基板の第1面上に提供される。マスク膜パターンの上部が除去されて前記伝導性ビアの第1端部上に形成された前記絶縁膜のキャッピング部が露出される。前記伝導性ビアと離隔され、前記伝導性ビアの側面に形成された前記絶縁膜の一部が除去されて前記絶縁膜内にリセスが形成される。前記伝導性ビアの第1端部上に形成された前記絶縁膜のキャッピング部が同時に除去される。
【選択図】図2A
Description
前記下部絶縁膜のうち少なくとも一部を除去して前記下部絶縁膜内に前記リセスをさらに形成することをさらに含む。
前記基板の第1面上では第1厚さを有する前記マスク膜の第1部分を提供し、そして前記伝導性ビアの第1端部上では第2厚さを有する前記マスク膜の第2部分を提供することを含み、前記第1厚さは、前記第2厚さに比べて大きくなり得る。
本発明と従来技術と比較した長所は添付図面を参照した詳細な説明と特許請求の範囲を通じて明確になり得る。特に、本発明は特許請求の範囲で明確に請求される。しかし、本発明は添付された図面と関連して次の詳細な説明を参照することによって最も良く理解される。図面において、同一の参照符号は多様な図面を通じて同一の構成要素を示す。
図1は本発明の一実施形態による半導体素子を示した断面図である。
図1を参照すれば、半導体素子1は基板100を垂直方向に貫通して電気的な信号を伝達する電気的な連結部10を含む。電気的な連結部10は貫通電極120を含む。一例によれば、貫通電極120は基板100が伸張する水平方向に対して実質的に垂直方向に伸張される。貫通電極120と基板100との間にはビア絶縁膜110が提供される。ビア絶縁膜110によって貫通電極120と基板100とは電気的に絶縁される。貫通電極120とビア絶縁膜110との間に貫通電極120の構成成分(例:銅)が基板100に拡散することを阻止するバリアー膜124がさらに提供される。
図2Aは本発明の一実施形態による半導体素子において、電気的な連結部の一例を示した断面図である。図2B及び図2Cは本発明の一実施形態による半導体素子において、整列キーの変形例を示した断面図である。図2Dは本発明の一実施形態による半導体素子において、整列キーの多様なディメンションを示した断面図である。
図3A及び図3Bは本発明の他の実施形態による半導体素子において、電気的な連結部の他の例を示した断面図である。以下では図2Aと異なる点について詳細に説明し、同一の点に対しては省略する。
図4Aは本発明の一実施形態による半導体素子をパッケイジングした半導体パッケージを示した断面図である。図4Bは図4Aの変形形態を示した断面図である。
図5A乃至図5Pは本発明の一実施形態による半導体素子の製造方法を示した断面図である。
図6A乃至図6Cは本発明の他の実施形態による半導体素子の製造方法を示した断面図である。
図7A乃至図7Cは本発明のその他の実施形態による半導体素子の製造方法を示した断面図である。
図8Aは本発明の実施形態による半導体素子を具備するメモリカードを示したブロック図である。図8Bは本発明の実施形態による半導体素子を応用した情報処理システムを示したブロック図である。
10、11、12、13 電気的な連結部
100 基板
101 ビアホール
102 層間絶縁膜
103 集積回路
104 第1層間絶縁膜
106 第2層間絶縁膜
107 上部絶縁膜
108 第1下部絶縁膜
109 第2下部絶縁膜
109f キャッピング部
110 ビア絶縁膜
111 下部絶縁膜
118 下部端子
119 鍍金膜
120 貫通電極
124 バリアー膜
152 金属配線
154 ボンディングパッド
160 整列キー
170 アンダーバンプ金属膜
190 突出部
198 上部端子
Claims (31)
- 基板を貫通して垂直方向に延長され、前記基板の第1面を通過するように延長されて前記基板の第1面に対して前記垂直方向に突出された第1端部を有する伝導性ビアを提供し、
前記伝導性ビアの第1端部及び前記基板の第1面上に絶縁膜を提供し、
前記絶縁膜上にマスク膜を提供し、前記マスク膜をパターニングして前記伝導性ビア部に開口部を有するマスク膜パターンを形成し、
前記マスク膜パターンの上部を除去して前記伝導性ビアの第1端部上に形成された前記絶縁膜のキャッピング部を露出させ、
前記マスク膜パターンをエッチングマスクとして利用して前記伝導性ビアと離隔され、前記伝導性ビアの側面に形成された前記絶縁膜の一部を前記伝導性ビアの第1端部上に形成された前記絶縁膜のキャッピング部と同時に除去して、前記絶縁膜内にリセスを形成することを特徴とする半導体素子の製造方法。 - 前記マスク膜パターンをエッチングマスクとして利用して前記伝導性ビアと離隔され、前記伝導性ビアの側面に形成された前記絶縁膜の一部を前記伝導性ビアの第1端部上に形成された前記絶縁膜のキャッピング部と同時に除去した後に、前記伝導性ビアを平坦化することを特徴とする請求項1に記載の半導体素子の製造方法。
- 前記伝導性ビアを平坦化し、前記絶縁膜内の前記整列キーの開口部の角部がラウンド形状の断面プロフィールに形成されることを特徴とする請求項2に記載の半導体素子の製造方法。
- 前記マスク膜パターンをエッチングマスクとして利用して前記伝導性ビアと離隔され、前記伝導性ビアの側面に形成された前記絶縁膜の一部を前記伝導性ビアの第1端部上に形成された前記絶縁膜のキャッピング部と同時に除去する前に、前記マスク膜パターンのうち少なくとも上部を除去することを特徴とする請求項1に記載の半導体素子の製造方法。
- 前記マスク膜パターンをエッチングマスクとして利用して前記伝導性ビアと離隔され、前記伝導性ビアの側面に形成された前記絶縁膜の一部を前記伝導性ビアの第1端部上に形成された前記絶縁膜のキャッピング部と同時に除去した後に、前記マスク膜パターンを除去することを特徴とする請求項1に記載の半導体素子の製造方法。
- 前記絶縁膜を提供することは、
前記伝導性ビアの第1端部及び前記基板の第1面上に下部絶縁膜を形成し、
前記下部絶縁膜上に前記下部絶縁膜に関して蝕刻作用選択性を有する上部絶縁膜を形成することを含み、
前記絶縁膜の一部を除去することは、
前記上部絶縁膜のうち少なくとも一部を除去して前記上部絶縁膜内に前記リセスを形成することを特徴とする請求項1に記載の半導体素子の製造方法。 - 前記絶縁膜の一部を除去することは、
前記下部絶縁膜のうち少なくとも一部を除去して前記下部絶縁膜内に前記リセスをさらに形成することを特徴とする請求項6に記載の半導体素子の製造方法。 - 前記絶縁膜上にマスク膜を提供することは、
前記基板の第1面上では第1厚さを有する前記マスク膜の第1部分を提供し、そして前記伝導性ビアの第1端部上では第2厚さを有する前記マスク膜の第2部分を提供することを含み、
前記第1厚さは、前記第2厚さに比べて大きいことを特徴とする請求項1に記載の半導体素子の製造方法。 - 前記マスク膜を提供することは、
平坦な上面を有する前記マスク膜を提供することを特徴とする請求項8に記載の半導体素子の製造方法。 - 前記マスク膜の第1部分は、前記基板の上面に対して第1高さを有する上面を含み、
前記伝導性ビアの第1端部上に形成された前記絶縁膜は、前記基板の上面に対して第2高さを有する上面を含み、
前記第1高さは、前記第2高さに比べて小さいことを特徴とする請求項8に記載の半導体素子の製造方法。 - 前記マスク膜の第1部分は、前記基板の上面に対して第1高さを有する上面を含み、
前記絶縁膜のキャッピング部は、前記基板の上面に対して第2高さを有する上面を含み、
前記第1高さは、前記第2高さに比べて大きいことを特徴とする請求項8に記載の半導体素子の製造方法。 - 前記マスク膜パターンの上部をさらに除去してリセスされたマスク膜パターンを形成し、
前記リセスされたマスク膜パターンをエッチングマスクとして利用して前記伝導性ビアと離隔され、前記伝導性ビアの側面に形成された前記絶縁膜の一部を除去することを特徴とする請求項1に記載の半導体素子の製造方法。 - 前記マスク膜をパターニングしてマスク膜パターンを形成することは、
光エネルギーによって完全露光された第1露光領域と光エネルギーによって部分露光された第2露光領域とを形成し、
前記第1露光領域を除去して前記リセスに対応する前記絶縁膜の一部を露出させる開口部を形成し、
前記第2露光領域を除去して前記キャッピング部に対応する前記絶縁膜の一部を露出させる開口部を形成することを特徴とする請求項1に記載の半導体素子の製造方法。 - 基板を貫通して垂直方向に延長され、前記基板の第1面を通過するように延長されて前記基板の第1面に対して前記垂直方向に突出された第1端部を有する伝導性ビアを提供し、
前記伝導性ビアの第1端部及び前記基板の第1面上に絶縁膜を提供し、
前記絶縁膜上にマスク膜を提供し、前記マスク膜をパターニングして前記伝導性ビア部に開口部を有するマスク膜パターンを形成し、
前記マスク膜パターンの上部を除去して前記伝導性ビアの第1端部上に形成された前記絶縁膜のキャッピング部を露出させ、
前記マスク膜パターンをエッチングマスクとして利用して前記伝導性ビアと離隔され、前記伝導性ビアの側面に形成された前記絶縁膜の一部を除去して、前記絶縁膜内に整列キー開口部を形成し、前記整列キーを形成した後に前記伝導性ビアの第1端部を平坦化することを特徴とする半導体素子の製造方法。 - 前記マスク膜パターンをエッチングマスクとして利用して前記伝導性ビアと離隔され、前記伝導性ビアの側面に形成された前記絶縁膜の一部を除去して前記絶縁膜内に整列キー開口部を形成することは、
前記伝導性ビアの第1端部上に形成された前記絶縁膜のキャッピング部を除去することと共に進行されることを特徴とする請求項14に記載の半導体素子の製造方法。 - 基板を貫通し、前記基板の下面外へ突出された下端部を有する貫通電極を形成し、
前記基板の下面上に前記貫通電極を覆う下部絶縁膜を形成し、
前記下部絶縁膜をパターニングして前記下部絶縁膜のうち前記貫通電極の下端部を覆うキャッピング部を除去し、
前記キャッピング部を除去することと共に前記下部絶縁膜の一部が陥没されて定義される整列キーを形成し、
前記基板の下面を平坦化することを特徴とする半導体素子の製造方法。 - 前記基板の下面を平坦化することは、
前記基板の下面外へ突出された前記貫通電極の下端部、そして前記貫通電極の下端部側面を覆う前記下部絶縁膜の延長部を研磨することを含み、
前記下部絶縁膜の研磨によって前記整列キーの角がラウンド形状にされることを特徴とする請求項16に記載の半導体素子の製造方法。 - 前記下部絶縁膜を形成した以後に、
前記下部絶縁膜上にマスク膜を形成し、
前記マスク膜をパターニングして前記下部絶縁膜のうち前記整列キーが形成される領域を開放させる開口部を形成し、
前記マスク膜をリセスして前記下部絶縁膜のキャッピング部を露出させることをさらに含み、
前記リセスされたマスク膜をマスクとするエッチング工程で前記下部絶縁膜をパターニングすることを特徴とする請求項16に記載の半導体素子の製造方法。 - 前記下部絶縁膜を形成した以後に、
前記下部絶縁膜上にマスク膜を形成し、
前記マスク膜に完全露光された第1露光領域と部分露光された第2露光領域を形成し、
前記第1露光領域を完全除去して前記下部絶縁膜のうち前記整列キーが形成される領域を開放させる開口部を形成し、
前記第2露光領域を部分除去して前記下部絶縁膜のキャッピング部を露出させることをさらに含み、
前記開口部を有するマスク膜をマスクとするエッチングによって前記下部絶縁膜をパターニングすることを特徴とする請求項16に記載の半導体素子の製造方法。 - 前記下部絶縁膜を形成した以後に、
前記下部絶縁膜上にマスク膜を形成し、
前記マスク膜をパターニングして前記下部絶縁膜のうち前記整列キーが形成される領域を開放させる第1開口部と前記下部絶縁膜のキャッピング部を開放させる第2開口部とを形成することをさらに含み、
前記第1開口部と前記第2開口部を有するマスク膜をマスクとするエッチング工程で前記下部絶縁膜をパターニングすることを特徴とする請求項16に記載の半導体素子の製造方法。 - 第1面とその反対面である第2面を含み、水平方向に伸張する基板と、
前記基板の第1面上に提供された絶縁膜と、
前記基板を貫通して前記水平方向に伸張される前記基板に対して垂直方向に延長され、前記基板の第1面を通過するように延長されて前記基板の第1面に対して前記垂直方向に突出された第1端部を有する伝導性ビアと、
前記伝導性ビアと離隔され、前記伝導性ビアの側面に提供された前記絶縁膜内に形成され、ラウンド形状の断面プロフィールの最外側縁を有する整列キーリセスと、を含むことを特徴とする半導体素子。 - 前記絶縁膜は、前記基板の第1面上に提供された下部絶縁膜と前記下部絶縁膜上に提供された上部絶縁膜とを含み、
前記下部絶縁膜と前記上部絶縁膜とは、互に異なる蝕刻作用選択性を有し、
前記整列キーリセスは、前記上部絶縁膜内に提供されたことを特徴とする請求項21に記載の半導体素子。 - 前記整列キーリセスは、前記上部絶縁膜内に形成された部分リセスを含むことを特徴とする請求項22に記載の半導体素子。
- 前記整列キーリセスは、前記上部絶縁膜内に形成された完全リセスを含むことを特徴とする請求項22に記載の半導体素子。
- 前記整列キーリセスは、前記上部絶縁膜内に形成された完全リセスと前記下部絶縁膜内に形成された部分リセスとを含むことを特徴とする請求項22に記載の半導体素子。
- 前記下部絶縁膜は、前記伝導性ビアに沿って前記基板の第1面から伸張されたことを特徴とする請求項22に記載の半導体素子。
- 前記伝導性ビアの側壁の間へ提供されたビア絶縁膜をさらに含むことを特徴とする請求項22に記載の半導体素子。
- 前記半導体素子は、第1及び第2半導体素子を含み、
前記第1半導体素子の伝導性ビアは、導電性端子を通じて前記第2半導体素子の伝導性ビアと連結されることを特徴とする請求項21に記載の半導体素子。 - 前記伝導性端子は、前記第1半導体素子の伝導性ビアと前記第2半導体素子の伝導性ビアとの間で整列されることを特徴とする請求項28に記載の半導体素子。
- 前記伝導性端子は、水平的にオフセットされて前記第1半導体素子の伝導性ビアと前記第2半導体素子の伝導性ビアとは、整列されないことを特徴とする請求項28に記載の半導体素子。
- コマンド信号とアドレス信号とを発生させるメモリコントローラと、
複数個のメモリ素子を含むメモリモジュールと、を含み、
前記メモリモジュールは、前記コマンド信号と前記アドレス信号とが伝達されて前記メモリ素子のうち少なくともいずれか1つに格納及び検索し、
前記メモリ素子各々は、
第1面とその反対面である第2面を含み、水平方向に伸張する基板と、
前記基板の第1面上に提供された絶縁膜と、
前記基板を貫通して前記水平方向に伸張される前記基板に対して垂直方向に延長され、前記基板の第1面を通過するように延長されて前記基板の第1面に対して前記垂直方向に突出された第1端部を有する伝導性ビアと、
前記伝導性ビアと離隔され、前記伝導性ビアの側面に提供された前記絶縁膜内に形成された、そしてラウンド形状の断面プロフィールの最外側縁を有する整列キーリセスと、を含むことを特徴とするメモリシステム。
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US20140179103A1 (en) | 2014-06-26 |
JP6316585B2 (ja) | 2018-04-25 |
US20150243637A1 (en) | 2015-08-27 |
US9070748B2 (en) | 2015-06-30 |
KR102018885B1 (ko) | 2019-09-05 |
KR20140080132A (ko) | 2014-06-30 |
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