JP2014115153A5 - - Google Patents
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- Publication number
- JP2014115153A5 JP2014115153A5 JP2012268539A JP2012268539A JP2014115153A5 JP 2014115153 A5 JP2014115153 A5 JP 2014115153A5 JP 2012268539 A JP2012268539 A JP 2012268539A JP 2012268539 A JP2012268539 A JP 2012268539A JP 2014115153 A5 JP2014115153 A5 JP 2014115153A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- fixed electrode
- resist mask
- pressure sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000034 method Methods 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 238000005530 etching Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012268539A JP5832417B2 (ja) | 2012-12-07 | 2012-12-07 | 半導体圧力センサおよびその製造方法 |
| US14/027,037 US9117932B2 (en) | 2012-12-07 | 2013-09-13 | Semiconductor pressure sensor and fabrication method thereof |
| CN201310661354.6A CN103872050B (zh) | 2012-12-07 | 2013-12-09 | 半导体压力传感器及其制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012268539A JP5832417B2 (ja) | 2012-12-07 | 2012-12-07 | 半導体圧力センサおよびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014115153A JP2014115153A (ja) | 2014-06-26 |
| JP2014115153A5 true JP2014115153A5 (enExample) | 2014-12-04 |
| JP5832417B2 JP5832417B2 (ja) | 2015-12-16 |
Family
ID=50880021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012268539A Expired - Fee Related JP5832417B2 (ja) | 2012-12-07 | 2012-12-07 | 半導体圧力センサおよびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9117932B2 (enExample) |
| JP (1) | JP5832417B2 (enExample) |
| CN (1) | CN103872050B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5933480B2 (ja) * | 2013-04-26 | 2016-06-08 | 三菱電機株式会社 | 半導体圧力センサおよびその製造方法 |
| JP6119615B2 (ja) * | 2014-01-08 | 2017-04-26 | 三菱電機株式会社 | 半導体装置の製造方法 |
| US9574961B2 (en) * | 2014-04-09 | 2017-02-21 | Continental Automotive Systems, Inc. | Humidity resistant sensors and methods of making same |
| US9340412B2 (en) * | 2014-07-28 | 2016-05-17 | Ams International Ag | Suspended membrane for capacitive pressure sensor |
| JP6433349B2 (ja) * | 2015-03-19 | 2018-12-05 | 三菱電機株式会社 | 半導体圧力センサおよびその製造方法 |
| US9846097B2 (en) * | 2015-11-03 | 2017-12-19 | Nxp Usa, Inc. | Pressure sensor with variable sense gap |
| JP6532429B2 (ja) * | 2016-06-01 | 2019-06-19 | 三菱電機株式会社 | 半導体圧力センサ |
| US11573143B2 (en) | 2021-04-21 | 2023-02-07 | Vitesco Technologies USA, LLC | Mems pressure sensing element with stress adjustors to minimize thermal hysteresis induced by electrical field |
| US12279424B2 (en) * | 2021-09-17 | 2025-04-15 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method of semiconductor device |
| JP2024002882A (ja) * | 2022-06-24 | 2024-01-11 | ローム株式会社 | 圧力センサ及び圧力センサの製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19638969C2 (de) * | 1996-09-23 | 2002-05-16 | Mosel Vitelic Inc | EEPROM mit einem Polydistanz-Floating-Gate und Verfahren zu deren Herstellung |
| US6472243B2 (en) | 2000-12-11 | 2002-10-29 | Motorola, Inc. | Method of forming an integrated CMOS capacitive pressure sensor |
| US7429495B2 (en) * | 2002-08-07 | 2008-09-30 | Chang-Feng Wan | System and method of fabricating micro cavities |
| JP4636187B2 (ja) * | 2008-04-22 | 2011-02-23 | 株式会社デンソー | 力学量センサの製造方法および力学量センサ |
| JP5092167B2 (ja) * | 2009-03-24 | 2012-12-05 | 三菱電機株式会社 | 半導体圧力センサおよびその製造方法 |
| DE102009027132A1 (de) * | 2009-06-24 | 2010-12-30 | Robert Bosch Gmbh | Induktive Delta-C Auswertung für Drucksensoren |
| US9341529B2 (en) * | 2009-11-04 | 2016-05-17 | Rohm Co., Ltd | Pressure sensor and method for manufacturing pressure sensor |
| CN101719482A (zh) * | 2009-11-25 | 2010-06-02 | 中国电子科技集团公司第二十四研究所 | 单片集成压力传感器的制造方法 |
| JP5436404B2 (ja) * | 2010-12-17 | 2014-03-05 | 三菱電機株式会社 | 半導体圧力センサ及びその製造方法 |
-
2012
- 2012-12-07 JP JP2012268539A patent/JP5832417B2/ja not_active Expired - Fee Related
-
2013
- 2013-09-13 US US14/027,037 patent/US9117932B2/en not_active Expired - Fee Related
- 2013-12-09 CN CN201310661354.6A patent/CN103872050B/zh not_active Expired - Fee Related
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