JP2016176755A5 - - Google Patents
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- Publication number
- JP2016176755A5 JP2016176755A5 JP2015055907A JP2015055907A JP2016176755A5 JP 2016176755 A5 JP2016176755 A5 JP 2016176755A5 JP 2015055907 A JP2015055907 A JP 2015055907A JP 2015055907 A JP2015055907 A JP 2015055907A JP 2016176755 A5 JP2016176755 A5 JP 2016176755A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- pressure sensor
- region
- oxide film
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015055907A JP6433349B2 (ja) | 2015-03-19 | 2015-03-19 | 半導体圧力センサおよびその製造方法 |
| US14/956,675 US9676616B2 (en) | 2015-03-19 | 2015-12-02 | Semiconductor pressure sensor and method of fabricating same |
| DE102016204613.6A DE102016204613A1 (de) | 2015-03-19 | 2016-03-21 | Halbleiterdrucksensor und Verfahren zur Fertigung desselben |
| CN201610162031.6A CN105987783B (zh) | 2015-03-19 | 2016-03-21 | 半导体压力传感器及其制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015055907A JP6433349B2 (ja) | 2015-03-19 | 2015-03-19 | 半導体圧力センサおよびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016176755A JP2016176755A (ja) | 2016-10-06 |
| JP2016176755A5 true JP2016176755A5 (enExample) | 2017-06-22 |
| JP6433349B2 JP6433349B2 (ja) | 2018-12-05 |
Family
ID=56853404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015055907A Expired - Fee Related JP6433349B2 (ja) | 2015-03-19 | 2015-03-19 | 半導体圧力センサおよびその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9676616B2 (enExample) |
| JP (1) | JP6433349B2 (enExample) |
| CN (1) | CN105987783B (enExample) |
| DE (1) | DE102016204613A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014225934B4 (de) * | 2014-12-15 | 2017-08-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Elektrostatisch auslenkbares mikromechanisches Bauelement und Verfahren zu seiner Herstellung |
| JP6532429B2 (ja) | 2016-06-01 | 2019-06-19 | 三菱電機株式会社 | 半導体圧力センサ |
| GB2567403B (en) * | 2017-06-03 | 2021-12-15 | Zedsen Ltd | Air pressure sensor |
| CN107256101B (zh) * | 2017-06-30 | 2020-05-12 | 上海天马微电子有限公司 | 一种触控显示面板及显示装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6167761B1 (en) | 1998-03-31 | 2001-01-02 | Hitachi, Ltd. And Hitachi Car Engineering Co., Ltd. | Capacitance type pressure sensor with capacitive elements actuated by a diaphragm |
| JP3310216B2 (ja) | 1998-03-31 | 2002-08-05 | 株式会社日立製作所 | 半導体圧力センサ |
| US6472243B2 (en) | 2000-12-11 | 2002-10-29 | Motorola, Inc. | Method of forming an integrated CMOS capacitive pressure sensor |
| KR100519749B1 (ko) * | 2001-05-10 | 2005-10-07 | 삼성전자주식회사 | 단일 앵커를 구비하는 마이크로 전자 기계시스템(ｍｅｍｓ) 스위치 |
| US6965468B2 (en) * | 2003-07-03 | 2005-11-15 | Reflectivity, Inc | Micromirror array having reduced gap between adjacent micromirrors of the micromirror array |
| US7964474B2 (en) * | 2008-12-31 | 2011-06-21 | Stmicroelectronics, Inc. | Use of field oxidation to simplify chamber fabrication in microfluidic devices |
| US8368153B2 (en) * | 2010-04-08 | 2013-02-05 | United Microelectronics Corp. | Wafer level package of MEMS microphone and manufacturing method thereof |
| JP5832417B2 (ja) * | 2012-12-07 | 2015-12-16 | 三菱電機株式会社 | 半導体圧力センサおよびその製造方法 |
| US8921952B2 (en) * | 2013-01-29 | 2014-12-30 | Freescale Semiconductor Inc. | Microelectromechanical system devices having crack resistant membrane structures and methods for the fabrication thereof |
| JP5933480B2 (ja) * | 2013-04-26 | 2016-06-08 | 三菱電機株式会社 | 半導体圧力センサおよびその製造方法 |
-
2015
- 2015-03-19 JP JP2015055907A patent/JP6433349B2/ja not_active Expired - Fee Related
- 2015-12-02 US US14/956,675 patent/US9676616B2/en not_active Expired - Fee Related
-
2016
- 2016-03-21 DE DE102016204613.6A patent/DE102016204613A1/de not_active Withdrawn
- 2016-03-21 CN CN201610162031.6A patent/CN105987783B/zh not_active Expired - Fee Related
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