CN105987783B - 半导体压力传感器及其制造方法 - Google Patents

半导体压力传感器及其制造方法 Download PDF

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Publication number
CN105987783B
CN105987783B CN201610162031.6A CN201610162031A CN105987783B CN 105987783 B CN105987783 B CN 105987783B CN 201610162031 A CN201610162031 A CN 201610162031A CN 105987783 B CN105987783 B CN 105987783B
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CN
China
Prior art keywords
region
movable electrode
pressure sensor
electrode
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201610162031.6A
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English (en)
Chinese (zh)
Other versions
CN105987783A (zh
Inventor
佐藤公敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN105987783A publication Critical patent/CN105987783A/zh
Application granted granted Critical
Publication of CN105987783B publication Critical patent/CN105987783B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0307—Anchors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/015—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0714—Forming the micromechanical structure with a CMOS process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0735—Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Computer Hardware Design (AREA)
CN201610162031.6A 2015-03-19 2016-03-21 半导体压力传感器及其制造方法 Expired - Fee Related CN105987783B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015055907A JP6433349B2 (ja) 2015-03-19 2015-03-19 半導体圧力センサおよびその製造方法
JP2015-055907 2015-03-19

Publications (2)

Publication Number Publication Date
CN105987783A CN105987783A (zh) 2016-10-05
CN105987783B true CN105987783B (zh) 2019-03-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610162031.6A Expired - Fee Related CN105987783B (zh) 2015-03-19 2016-03-21 半导体压力传感器及其制造方法

Country Status (4)

Country Link
US (1) US9676616B2 (enExample)
JP (1) JP6433349B2 (enExample)
CN (1) CN105987783B (enExample)
DE (1) DE102016204613A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014225934B4 (de) * 2014-12-15 2017-08-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Elektrostatisch auslenkbares mikromechanisches Bauelement und Verfahren zu seiner Herstellung
JP6532429B2 (ja) 2016-06-01 2019-06-19 三菱電機株式会社 半導体圧力センサ
GB2567403B (en) 2017-06-03 2021-12-15 Zedsen Ltd Air pressure sensor
CN107256101B (zh) * 2017-06-30 2020-05-12 上海天马微电子有限公司 一种触控显示面板及显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1385357A (zh) * 2001-05-10 2002-12-18 三星电子株式会社 带单电枢的微电子机械系统
CN1856726A (zh) * 2003-07-24 2006-11-01 反射公司 微镜阵列中相邻微镜之间间隙得到了减小的微镜阵列
CN103872050A (zh) * 2012-12-07 2014-06-18 三菱电机株式会社 半导体压力传感器及其制造方法
CN103964373A (zh) * 2013-01-29 2014-08-06 飞思卡尔半导体公司 具有抗裂膜结构的微机电系统器件及其制造方法
CN104124244A (zh) * 2013-04-26 2014-10-29 三菱电机株式会社 半导体压力传感器及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6167761B1 (en) 1998-03-31 2001-01-02 Hitachi, Ltd. And Hitachi Car Engineering Co., Ltd. Capacitance type pressure sensor with capacitive elements actuated by a diaphragm
JP3310216B2 (ja) 1998-03-31 2002-08-05 株式会社日立製作所 半導体圧力センサ
US6472243B2 (en) * 2000-12-11 2002-10-29 Motorola, Inc. Method of forming an integrated CMOS capacitive pressure sensor
US7964474B2 (en) * 2008-12-31 2011-06-21 Stmicroelectronics, Inc. Use of field oxidation to simplify chamber fabrication in microfluidic devices
US8368153B2 (en) * 2010-04-08 2013-02-05 United Microelectronics Corp. Wafer level package of MEMS microphone and manufacturing method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1385357A (zh) * 2001-05-10 2002-12-18 三星电子株式会社 带单电枢的微电子机械系统
CN1856726A (zh) * 2003-07-24 2006-11-01 反射公司 微镜阵列中相邻微镜之间间隙得到了减小的微镜阵列
CN103872050A (zh) * 2012-12-07 2014-06-18 三菱电机株式会社 半导体压力传感器及其制造方法
CN103964373A (zh) * 2013-01-29 2014-08-06 飞思卡尔半导体公司 具有抗裂膜结构的微机电系统器件及其制造方法
CN104124244A (zh) * 2013-04-26 2014-10-29 三菱电机株式会社 半导体压力传感器及其制造方法

Also Published As

Publication number Publication date
CN105987783A (zh) 2016-10-05
JP6433349B2 (ja) 2018-12-05
DE102016204613A1 (de) 2016-09-22
US9676616B2 (en) 2017-06-13
US20160272487A1 (en) 2016-09-22
JP2016176755A (ja) 2016-10-06

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Granted publication date: 20190301

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