DE102016204613A1 - Halbleiterdrucksensor und Verfahren zur Fertigung desselben - Google Patents

Halbleiterdrucksensor und Verfahren zur Fertigung desselben Download PDF

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Publication number
DE102016204613A1
DE102016204613A1 DE102016204613.6A DE102016204613A DE102016204613A1 DE 102016204613 A1 DE102016204613 A1 DE 102016204613A1 DE 102016204613 A DE102016204613 A DE 102016204613A DE 102016204613 A1 DE102016204613 A1 DE 102016204613A1
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DE
Germany
Prior art keywords
layer
pressure sensor
movable electrode
area
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102016204613.6A
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German (de)
English (en)
Inventor
Kimitoshi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102016204613A1 publication Critical patent/DE102016204613A1/de
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0307—Anchors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/015—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0714—Forming the micromechanical structure with a CMOS process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0735—Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Computer Hardware Design (AREA)
DE102016204613.6A 2015-03-19 2016-03-21 Halbleiterdrucksensor und Verfahren zur Fertigung desselben Withdrawn DE102016204613A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-055907 2015-03-19
JP2015055907A JP6433349B2 (ja) 2015-03-19 2015-03-19 半導体圧力センサおよびその製造方法

Publications (1)

Publication Number Publication Date
DE102016204613A1 true DE102016204613A1 (de) 2016-09-22

Family

ID=56853404

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102016204613.6A Withdrawn DE102016204613A1 (de) 2015-03-19 2016-03-21 Halbleiterdrucksensor und Verfahren zur Fertigung desselben

Country Status (4)

Country Link
US (1) US9676616B2 (enExample)
JP (1) JP6433349B2 (enExample)
CN (1) CN105987783B (enExample)
DE (1) DE102016204613A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014225934B4 (de) * 2014-12-15 2017-08-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Elektrostatisch auslenkbares mikromechanisches Bauelement und Verfahren zu seiner Herstellung
JP6532429B2 (ja) 2016-06-01 2019-06-19 三菱電機株式会社 半導体圧力センサ
GB2567403B (en) 2017-06-03 2021-12-15 Zedsen Ltd Air pressure sensor
CN107256101B (zh) * 2017-06-30 2020-05-12 上海天马微电子有限公司 一种触控显示面板及显示装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11281509A (ja) 1998-03-31 1999-10-15 Hitachi Ltd 半導体圧力センサ及びその製造方法
JP2004526299A (ja) 2000-12-11 2004-08-26 モトローラ・インコーポレイテッド 集積されたｃｍｏｓ容量型圧力センサ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6167761B1 (en) 1998-03-31 2001-01-02 Hitachi, Ltd. And Hitachi Car Engineering Co., Ltd. Capacitance type pressure sensor with capacitive elements actuated by a diaphragm
KR100519749B1 (ko) * 2001-05-10 2005-10-07 삼성전자주식회사 단일 앵커를 구비하는 마이크로 전자 기계시스템(ｍｅｍｓ) 스위치
US6965468B2 (en) * 2003-07-03 2005-11-15 Reflectivity, Inc Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US7964474B2 (en) * 2008-12-31 2011-06-21 Stmicroelectronics, Inc. Use of field oxidation to simplify chamber fabrication in microfluidic devices
US8368153B2 (en) * 2010-04-08 2013-02-05 United Microelectronics Corp. Wafer level package of MEMS microphone and manufacturing method thereof
JP5832417B2 (ja) * 2012-12-07 2015-12-16 三菱電機株式会社 半導体圧力センサおよびその製造方法
US8921952B2 (en) * 2013-01-29 2014-12-30 Freescale Semiconductor Inc. Microelectromechanical system devices having crack resistant membrane structures and methods for the fabrication thereof
JP5933480B2 (ja) 2013-04-26 2016-06-08 三菱電機株式会社 半導体圧力センサおよびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11281509A (ja) 1998-03-31 1999-10-15 Hitachi Ltd 半導体圧力センサ及びその製造方法
JP2004526299A (ja) 2000-12-11 2004-08-26 モトローラ・インコーポレイテッド 集積されたｃｍｏｓ容量型圧力センサ

Also Published As

Publication number Publication date
JP6433349B2 (ja) 2018-12-05
CN105987783A (zh) 2016-10-05
CN105987783B (zh) 2019-03-01
US9676616B2 (en) 2017-06-13
US20160272487A1 (en) 2016-09-22
JP2016176755A (ja) 2016-10-06

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R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee