JP2014215206A5 - - Google Patents

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Publication number
JP2014215206A5
JP2014215206A5 JP2013093681A JP2013093681A JP2014215206A5 JP 2014215206 A5 JP2014215206 A5 JP 2014215206A5 JP 2013093681 A JP2013093681 A JP 2013093681A JP 2013093681 A JP2013093681 A JP 2013093681A JP 2014215206 A5 JP2014215206 A5 JP 2014215206A5
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JP
Japan
Prior art keywords
pressure sensor
value
pressure
capacitance value
region
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JP2013093681A
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English (en)
Japanese (ja)
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JP2014215206A (ja
JP5933480B2 (ja
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Priority to JP2013093681A priority Critical patent/JP5933480B2/ja
Priority claimed from JP2013093681A external-priority patent/JP5933480B2/ja
Priority to US14/154,813 priority patent/US9395258B2/en
Priority to CN201410100511.0A priority patent/CN104124244B/zh
Publication of JP2014215206A publication Critical patent/JP2014215206A/ja
Publication of JP2014215206A5 publication Critical patent/JP2014215206A5/ja
Application granted granted Critical
Publication of JP5933480B2 publication Critical patent/JP5933480B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013093681A 2013-04-26 2013-04-26 半導体圧力センサおよびその製造方法 Expired - Fee Related JP5933480B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013093681A JP5933480B2 (ja) 2013-04-26 2013-04-26 半導体圧力センサおよびその製造方法
US14/154,813 US9395258B2 (en) 2013-04-26 2014-01-14 Semiconductor pressure sensor and fabrication method thereof
CN201410100511.0A CN104124244B (zh) 2013-04-26 2014-03-18 半导体压力传感器及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013093681A JP5933480B2 (ja) 2013-04-26 2013-04-26 半導体圧力センサおよびその製造方法

Publications (3)

Publication Number Publication Date
JP2014215206A JP2014215206A (ja) 2014-11-17
JP2014215206A5 true JP2014215206A5 (enExample) 2015-06-18
JP5933480B2 JP5933480B2 (ja) 2016-06-08

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JP2013093681A Expired - Fee Related JP5933480B2 (ja) 2013-04-26 2013-04-26 半導体圧力センサおよびその製造方法

Country Status (3)

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US (1) US9395258B2 (enExample)
JP (1) JP5933480B2 (enExample)
CN (1) CN104124244B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6119615B2 (ja) 2014-01-08 2017-04-26 三菱電機株式会社 半導体装置の製造方法
US9340412B2 (en) * 2014-07-28 2016-05-17 Ams International Ag Suspended membrane for capacitive pressure sensor
JP6433349B2 (ja) * 2015-03-19 2018-12-05 三菱電機株式会社 半導体圧力センサおよびその製造方法
CN107709227A (zh) * 2015-04-21 2018-02-16 加泰罗尼亚理工大学 包括具有通过使用修改的通孔改善质量和可靠性的多层微机械结构的集成电路及其获得方法
US9846097B2 (en) * 2015-11-03 2017-12-19 Nxp Usa, Inc. Pressure sensor with variable sense gap
JP6532429B2 (ja) 2016-06-01 2019-06-19 三菱電機株式会社 半導体圧力センサ
US10199424B1 (en) * 2017-07-19 2019-02-05 Meridian Innovation Pte Ltd Thermoelectric-based infrared detector having a cavity and a MEMS structure defined by BEOL metals lines
CN111684252B (zh) * 2017-11-17 2022-02-01 希奥检测有限公司 具有悬浮膜并在锚边缘具有圆角的电容式压力传感器和其他器件
CN120352074B (zh) * 2025-06-20 2025-09-26 南京大学 一种电容式半导体微型真空计及真空检测方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19638969C2 (de) * 1996-09-23 2002-05-16 Mosel Vitelic Inc EEPROM mit einem Polydistanz-Floating-Gate und Verfahren zu deren Herstellung
US5933741A (en) * 1997-08-18 1999-08-03 Vanguard International Semiconductor Corporation Method of making titanium silicide source/drains and tungsten silicide gate electrodes for field effect transistors
US6472243B2 (en) * 2000-12-11 2002-10-29 Motorola, Inc. Method of forming an integrated CMOS capacitive pressure sensor
US7429495B2 (en) * 2002-08-07 2008-09-30 Chang-Feng Wan System and method of fabricating micro cavities
DE102009027132A1 (de) * 2009-06-24 2010-12-30 Robert Bosch Gmbh Induktive Delta-C Auswertung für Drucksensoren
US9341529B2 (en) * 2009-11-04 2016-05-17 Rohm Co., Ltd Pressure sensor and method for manufacturing pressure sensor
JP5504187B2 (ja) * 2011-01-26 2014-05-28 株式会社東芝 半導体装置及びその製造方法
JP5832417B2 (ja) 2012-12-07 2015-12-16 三菱電機株式会社 半導体圧力センサおよびその製造方法

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