JP5933480B2 - 半導体圧力センサおよびその製造方法 - Google Patents

半導体圧力センサおよびその製造方法 Download PDF

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Publication number
JP5933480B2
JP5933480B2 JP2013093681A JP2013093681A JP5933480B2 JP 5933480 B2 JP5933480 B2 JP 5933480B2 JP 2013093681 A JP2013093681 A JP 2013093681A JP 2013093681 A JP2013093681 A JP 2013093681A JP 5933480 B2 JP5933480 B2 JP 5933480B2
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Japan
Prior art keywords
film
region
pressure sensor
electrode
insulating film
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Expired - Fee Related
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JP2013093681A
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English (en)
Japanese (ja)
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JP2014215206A (ja
JP2014215206A5 (enExample
Inventor
公敏 佐藤
公敏 佐藤
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2013093681A priority Critical patent/JP5933480B2/ja
Priority to US14/154,813 priority patent/US9395258B2/en
Priority to CN201410100511.0A priority patent/CN104124244B/zh
Publication of JP2014215206A publication Critical patent/JP2014215206A/ja
Publication of JP2014215206A5 publication Critical patent/JP2014215206A5/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
    • B81C1/00952—Treatments or methods for avoiding stiction during the manufacturing process not provided for in groups B81C1/00928 - B81C1/00944
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0714—Forming the micromechanical structure with a CMOS process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0742—Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP2013093681A 2013-04-26 2013-04-26 半導体圧力センサおよびその製造方法 Expired - Fee Related JP5933480B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013093681A JP5933480B2 (ja) 2013-04-26 2013-04-26 半導体圧力センサおよびその製造方法
US14/154,813 US9395258B2 (en) 2013-04-26 2014-01-14 Semiconductor pressure sensor and fabrication method thereof
CN201410100511.0A CN104124244B (zh) 2013-04-26 2014-03-18 半导体压力传感器及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013093681A JP5933480B2 (ja) 2013-04-26 2013-04-26 半導体圧力センサおよびその製造方法

Publications (3)

Publication Number Publication Date
JP2014215206A JP2014215206A (ja) 2014-11-17
JP2014215206A5 JP2014215206A5 (enExample) 2015-06-18
JP5933480B2 true JP5933480B2 (ja) 2016-06-08

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JP2013093681A Expired - Fee Related JP5933480B2 (ja) 2013-04-26 2013-04-26 半導体圧力センサおよびその製造方法

Country Status (3)

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US (1) US9395258B2 (enExample)
JP (1) JP5933480B2 (enExample)
CN (1) CN104124244B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015129699A (ja) * 2014-01-08 2015-07-16 三菱電機株式会社 半導体装置の製造方法
JP2017531166A (ja) * 2014-07-28 2017-10-19 アムス インターナショナル エージー 容量性圧力センサ用の懸架メンブレン
US10239747B2 (en) 2016-06-01 2019-03-26 Mitsubishi Electric Corporation Semiconductor pressure sensor

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6433349B2 (ja) * 2015-03-19 2018-12-05 三菱電機株式会社 半導体圧力センサおよびその製造方法
CN107709227A (zh) * 2015-04-21 2018-02-16 加泰罗尼亚理工大学 包括具有通过使用修改的通孔改善质量和可靠性的多层微机械结构的集成电路及其获得方法
US9846097B2 (en) * 2015-11-03 2017-12-19 Nxp Usa, Inc. Pressure sensor with variable sense gap
US10199424B1 (en) * 2017-07-19 2019-02-05 Meridian Innovation Pte Ltd Thermoelectric-based infrared detector having a cavity and a MEMS structure defined by BEOL metals lines
CN111684252B (zh) * 2017-11-17 2022-02-01 希奥检测有限公司 具有悬浮膜并在锚边缘具有圆角的电容式压力传感器和其他器件
CN120352074B (zh) * 2025-06-20 2025-09-26 南京大学 一种电容式半导体微型真空计及真空检测方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19638969C2 (de) * 1996-09-23 2002-05-16 Mosel Vitelic Inc EEPROM mit einem Polydistanz-Floating-Gate und Verfahren zu deren Herstellung
US5933741A (en) * 1997-08-18 1999-08-03 Vanguard International Semiconductor Corporation Method of making titanium silicide source/drains and tungsten silicide gate electrodes for field effect transistors
US6472243B2 (en) * 2000-12-11 2002-10-29 Motorola, Inc. Method of forming an integrated CMOS capacitive pressure sensor
US7429495B2 (en) * 2002-08-07 2008-09-30 Chang-Feng Wan System and method of fabricating micro cavities
DE102009027132A1 (de) * 2009-06-24 2010-12-30 Robert Bosch Gmbh Induktive Delta-C Auswertung für Drucksensoren
US9341529B2 (en) * 2009-11-04 2016-05-17 Rohm Co., Ltd Pressure sensor and method for manufacturing pressure sensor
JP5504187B2 (ja) * 2011-01-26 2014-05-28 株式会社東芝 半導体装置及びその製造方法
JP5832417B2 (ja) 2012-12-07 2015-12-16 三菱電機株式会社 半導体圧力センサおよびその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015129699A (ja) * 2014-01-08 2015-07-16 三菱電機株式会社 半導体装置の製造方法
JP2017531166A (ja) * 2014-07-28 2017-10-19 アムス インターナショナル エージー 容量性圧力センサ用の懸架メンブレン
US10239747B2 (en) 2016-06-01 2019-03-26 Mitsubishi Electric Corporation Semiconductor pressure sensor

Also Published As

Publication number Publication date
CN104124244A (zh) 2014-10-29
CN104124244B (zh) 2017-07-25
US9395258B2 (en) 2016-07-19
JP2014215206A (ja) 2014-11-17
US20140319585A1 (en) 2014-10-30

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