CN104124244B - 半导体压力传感器及其制造方法 - Google Patents

半导体压力传感器及其制造方法 Download PDF

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Publication number
CN104124244B
CN104124244B CN201410100511.0A CN201410100511A CN104124244B CN 104124244 B CN104124244 B CN 104124244B CN 201410100511 A CN201410100511 A CN 201410100511A CN 104124244 B CN104124244 B CN 104124244B
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CN
China
Prior art keywords
film
pressure sensor
region
electrode
space
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201410100511.0A
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English (en)
Chinese (zh)
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CN104124244A (zh
Inventor
佐藤公敏
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN104124244A publication Critical patent/CN104124244A/zh
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Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
    • B81C1/00952—Treatments or methods for avoiding stiction during the manufacturing process not provided for in groups B81C1/00928 - B81C1/00944
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0714—Forming the micromechanical structure with a CMOS process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0742—Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
CN201410100511.0A 2013-04-26 2014-03-18 半导体压力传感器及其制造方法 Expired - Fee Related CN104124244B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013093681A JP5933480B2 (ja) 2013-04-26 2013-04-26 半導体圧力センサおよびその製造方法
JP2013-093681 2013-04-26

Publications (2)

Publication Number Publication Date
CN104124244A CN104124244A (zh) 2014-10-29
CN104124244B true CN104124244B (zh) 2017-07-25

Family

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Family Applications (1)

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CN201410100511.0A Expired - Fee Related CN104124244B (zh) 2013-04-26 2014-03-18 半导体压力传感器及其制造方法

Country Status (3)

Country Link
US (1) US9395258B2 (enExample)
JP (1) JP5933480B2 (enExample)
CN (1) CN104124244B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6119615B2 (ja) 2014-01-08 2017-04-26 三菱電機株式会社 半導体装置の製造方法
US9340412B2 (en) * 2014-07-28 2016-05-17 Ams International Ag Suspended membrane for capacitive pressure sensor
JP6433349B2 (ja) * 2015-03-19 2018-12-05 三菱電機株式会社 半導体圧力センサおよびその製造方法
CN107709227A (zh) * 2015-04-21 2018-02-16 加泰罗尼亚理工大学 包括具有通过使用修改的通孔改善质量和可靠性的多层微机械结构的集成电路及其获得方法
US9846097B2 (en) * 2015-11-03 2017-12-19 Nxp Usa, Inc. Pressure sensor with variable sense gap
JP6532429B2 (ja) 2016-06-01 2019-06-19 三菱電機株式会社 半導体圧力センサ
US10199424B1 (en) * 2017-07-19 2019-02-05 Meridian Innovation Pte Ltd Thermoelectric-based infrared detector having a cavity and a MEMS structure defined by BEOL metals lines
CN111684252B (zh) * 2017-11-17 2022-02-01 希奥检测有限公司 具有悬浮膜并在锚边缘具有圆角的电容式压力传感器和其他器件
CN120352074B (zh) * 2025-06-20 2025-09-26 南京大学 一种电容式半导体微型真空计及真空检测方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5789297A (en) * 1996-09-23 1998-08-04 Mosel Vitelic Inc. Method of making EEPROM cell device with polyspacer floating gate
US6472243B2 (en) * 2000-12-11 2002-10-29 Motorola, Inc. Method of forming an integrated CMOS capacitive pressure sensor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5933741A (en) * 1997-08-18 1999-08-03 Vanguard International Semiconductor Corporation Method of making titanium silicide source/drains and tungsten silicide gate electrodes for field effect transistors
US7429495B2 (en) * 2002-08-07 2008-09-30 Chang-Feng Wan System and method of fabricating micro cavities
DE102009027132A1 (de) * 2009-06-24 2010-12-30 Robert Bosch Gmbh Induktive Delta-C Auswertung für Drucksensoren
US9341529B2 (en) * 2009-11-04 2016-05-17 Rohm Co., Ltd Pressure sensor and method for manufacturing pressure sensor
JP5504187B2 (ja) * 2011-01-26 2014-05-28 株式会社東芝 半導体装置及びその製造方法
JP5832417B2 (ja) 2012-12-07 2015-12-16 三菱電機株式会社 半導体圧力センサおよびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5789297A (en) * 1996-09-23 1998-08-04 Mosel Vitelic Inc. Method of making EEPROM cell device with polyspacer floating gate
US6472243B2 (en) * 2000-12-11 2002-10-29 Motorola, Inc. Method of forming an integrated CMOS capacitive pressure sensor

Also Published As

Publication number Publication date
CN104124244A (zh) 2014-10-29
US9395258B2 (en) 2016-07-19
JP2014215206A (ja) 2014-11-17
JP5933480B2 (ja) 2016-06-08
US20140319585A1 (en) 2014-10-30

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Granted publication date: 20170725

Termination date: 20210318