JP5832417B2 - 半導体圧力センサおよびその製造方法 - Google Patents

半導体圧力センサおよびその製造方法 Download PDF

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Publication number
JP5832417B2
JP5832417B2 JP2012268539A JP2012268539A JP5832417B2 JP 5832417 B2 JP5832417 B2 JP 5832417B2 JP 2012268539 A JP2012268539 A JP 2012268539A JP 2012268539 A JP2012268539 A JP 2012268539A JP 5832417 B2 JP5832417 B2 JP 5832417B2
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Japan
Prior art keywords
film
region
pressure sensor
electrode
insulating film
Prior art date
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Expired - Fee Related
Application number
JP2012268539A
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English (en)
Japanese (ja)
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JP2014115153A (ja
JP2014115153A5 (enExample
Inventor
公敏 佐藤
公敏 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2012268539A priority Critical patent/JP5832417B2/ja
Priority to US14/027,037 priority patent/US9117932B2/en
Priority to CN201310661354.6A priority patent/CN103872050B/zh
Publication of JP2014115153A publication Critical patent/JP2014115153A/ja
Publication of JP2014115153A5 publication Critical patent/JP2014115153A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0714—Forming the micromechanical structure with a CMOS process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0735—Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0757—Topology for facilitating the monolithic integration
    • B81C2203/0778—Topology for facilitating the monolithic integration not provided for in B81C2203/0764 - B81C2203/0771

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
JP2012268539A 2012-12-07 2012-12-07 半導体圧力センサおよびその製造方法 Expired - Fee Related JP5832417B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012268539A JP5832417B2 (ja) 2012-12-07 2012-12-07 半導体圧力センサおよびその製造方法
US14/027,037 US9117932B2 (en) 2012-12-07 2013-09-13 Semiconductor pressure sensor and fabrication method thereof
CN201310661354.6A CN103872050B (zh) 2012-12-07 2013-12-09 半导体压力传感器及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012268539A JP5832417B2 (ja) 2012-12-07 2012-12-07 半導体圧力センサおよびその製造方法

Publications (3)

Publication Number Publication Date
JP2014115153A JP2014115153A (ja) 2014-06-26
JP2014115153A5 JP2014115153A5 (enExample) 2014-12-04
JP5832417B2 true JP5832417B2 (ja) 2015-12-16

Family

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Family Applications (1)

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JP2012268539A Expired - Fee Related JP5832417B2 (ja) 2012-12-07 2012-12-07 半導体圧力センサおよびその製造方法

Country Status (3)

Country Link
US (1) US9117932B2 (enExample)
JP (1) JP5832417B2 (enExample)
CN (1) CN103872050B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014215206A (ja) * 2013-04-26 2014-11-17 三菱電機株式会社 半導体圧力センサおよびその製造方法
JP2015129699A (ja) * 2014-01-08 2015-07-16 三菱電機株式会社 半導体装置の製造方法
JP2017531166A (ja) * 2014-07-28 2017-10-19 アムス インターナショナル エージー 容量性圧力センサ用の懸架メンブレン

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9574961B2 (en) * 2014-04-09 2017-02-21 Continental Automotive Systems, Inc. Humidity resistant sensors and methods of making same
JP6433349B2 (ja) * 2015-03-19 2018-12-05 三菱電機株式会社 半導体圧力センサおよびその製造方法
US9846097B2 (en) * 2015-11-03 2017-12-19 Nxp Usa, Inc. Pressure sensor with variable sense gap
JP6532429B2 (ja) * 2016-06-01 2019-06-19 三菱電機株式会社 半導体圧力センサ
US11573143B2 (en) 2021-04-21 2023-02-07 Vitesco Technologies USA, LLC Mems pressure sensing element with stress adjustors to minimize thermal hysteresis induced by electrical field
US12279424B2 (en) * 2021-09-17 2025-04-15 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method of semiconductor device
JP2024002882A (ja) * 2022-06-24 2024-01-11 ローム株式会社 圧力センサ及び圧力センサの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19638969C2 (de) * 1996-09-23 2002-05-16 Mosel Vitelic Inc EEPROM mit einem Polydistanz-Floating-Gate und Verfahren zu deren Herstellung
US6472243B2 (en) 2000-12-11 2002-10-29 Motorola, Inc. Method of forming an integrated CMOS capacitive pressure sensor
US7429495B2 (en) * 2002-08-07 2008-09-30 Chang-Feng Wan System and method of fabricating micro cavities
JP4636187B2 (ja) * 2008-04-22 2011-02-23 株式会社デンソー 力学量センサの製造方法および力学量センサ
JP5092167B2 (ja) * 2009-03-24 2012-12-05 三菱電機株式会社 半導体圧力センサおよびその製造方法
DE102009027132A1 (de) * 2009-06-24 2010-12-30 Robert Bosch Gmbh Induktive Delta-C Auswertung für Drucksensoren
US9341529B2 (en) * 2009-11-04 2016-05-17 Rohm Co., Ltd Pressure sensor and method for manufacturing pressure sensor
CN101719482A (zh) * 2009-11-25 2010-06-02 中国电子科技集团公司第二十四研究所 单片集成压力传感器的制造方法
JP5436404B2 (ja) * 2010-12-17 2014-03-05 三菱電機株式会社 半導体圧力センサ及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014215206A (ja) * 2013-04-26 2014-11-17 三菱電機株式会社 半導体圧力センサおよびその製造方法
US9395258B2 (en) 2013-04-26 2016-07-19 Mitsubishi Electric Corporation Semiconductor pressure sensor and fabrication method thereof
JP2015129699A (ja) * 2014-01-08 2015-07-16 三菱電機株式会社 半導体装置の製造方法
JP2017531166A (ja) * 2014-07-28 2017-10-19 アムス インターナショナル エージー 容量性圧力センサ用の懸架メンブレン

Also Published As

Publication number Publication date
CN103872050A (zh) 2014-06-18
JP2014115153A (ja) 2014-06-26
US9117932B2 (en) 2015-08-25
US20140159122A1 (en) 2014-06-12
CN103872050B (zh) 2017-01-04

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