CN103872050B - 半导体压力传感器及其制造方法 - Google Patents

半导体压力传感器及其制造方法 Download PDF

Info

Publication number
CN103872050B
CN103872050B CN201310661354.6A CN201310661354A CN103872050B CN 103872050 B CN103872050 B CN 103872050B CN 201310661354 A CN201310661354 A CN 201310661354A CN 103872050 B CN103872050 B CN 103872050B
Authority
CN
China
Prior art keywords
film
electrode
region
pressure sensor
semiconductor pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201310661354.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN103872050A (zh
Inventor
佐藤公敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Corp
Original Assignee
Mitsubishi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Corp filed Critical Mitsubishi Corp
Publication of CN103872050A publication Critical patent/CN103872050A/zh
Application granted granted Critical
Publication of CN103872050B publication Critical patent/CN103872050B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0714—Forming the micromechanical structure with a CMOS process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0735—Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0757—Topology for facilitating the monolithic integration
    • B81C2203/0778—Topology for facilitating the monolithic integration not provided for in B81C2203/0764 - B81C2203/0771

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
CN201310661354.6A 2012-12-07 2013-12-09 半导体压力传感器及其制造方法 Expired - Fee Related CN103872050B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-268539 2012-12-07
JP2012268539A JP5832417B2 (ja) 2012-12-07 2012-12-07 半導体圧力センサおよびその製造方法

Publications (2)

Publication Number Publication Date
CN103872050A CN103872050A (zh) 2014-06-18
CN103872050B true CN103872050B (zh) 2017-01-04

Family

ID=50880021

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310661354.6A Expired - Fee Related CN103872050B (zh) 2012-12-07 2013-12-09 半导体压力传感器及其制造方法

Country Status (3)

Country Link
US (1) US9117932B2 (enExample)
JP (1) JP5832417B2 (enExample)
CN (1) CN103872050B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5933480B2 (ja) 2013-04-26 2016-06-08 三菱電機株式会社 半導体圧力センサおよびその製造方法
JP6119615B2 (ja) 2014-01-08 2017-04-26 三菱電機株式会社 半導体装置の製造方法
US9574961B2 (en) * 2014-04-09 2017-02-21 Continental Automotive Systems, Inc. Humidity resistant sensors and methods of making same
US9340412B2 (en) * 2014-07-28 2016-05-17 Ams International Ag Suspended membrane for capacitive pressure sensor
JP6433349B2 (ja) * 2015-03-19 2018-12-05 三菱電機株式会社 半導体圧力センサおよびその製造方法
US9846097B2 (en) * 2015-11-03 2017-12-19 Nxp Usa, Inc. Pressure sensor with variable sense gap
JP6532429B2 (ja) 2016-06-01 2019-06-19 三菱電機株式会社 半導体圧力センサ
US11573143B2 (en) 2021-04-21 2023-02-07 Vitesco Technologies USA, LLC Mems pressure sensing element with stress adjustors to minimize thermal hysteresis induced by electrical field
US12279424B2 (en) * 2021-09-17 2025-04-15 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method of semiconductor device
JP2024002882A (ja) * 2022-06-24 2024-01-11 ローム株式会社 圧力センサ及び圧力センサの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101719482A (zh) * 2009-11-25 2010-06-02 中国电子科技集团公司第二十四研究所 单片集成压力传感器的制造方法
CN101846563A (zh) * 2009-03-24 2010-09-29 三菱电机株式会社 半导体压力传感器及其制造方法
CN102564658A (zh) * 2010-12-17 2012-07-11 三菱电机株式会社 半导体压力传感器及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19638969C2 (de) * 1996-09-23 2002-05-16 Mosel Vitelic Inc EEPROM mit einem Polydistanz-Floating-Gate und Verfahren zu deren Herstellung
US6472243B2 (en) * 2000-12-11 2002-10-29 Motorola, Inc. Method of forming an integrated CMOS capacitive pressure sensor
US7429495B2 (en) * 2002-08-07 2008-09-30 Chang-Feng Wan System and method of fabricating micro cavities
JP4636187B2 (ja) * 2008-04-22 2011-02-23 株式会社デンソー 力学量センサの製造方法および力学量センサ
DE102009027132A1 (de) * 2009-06-24 2010-12-30 Robert Bosch Gmbh Induktive Delta-C Auswertung für Drucksensoren
US9341529B2 (en) * 2009-11-04 2016-05-17 Rohm Co., Ltd Pressure sensor and method for manufacturing pressure sensor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101846563A (zh) * 2009-03-24 2010-09-29 三菱电机株式会社 半导体压力传感器及其制造方法
CN101719482A (zh) * 2009-11-25 2010-06-02 中国电子科技集团公司第二十四研究所 单片集成压力传感器的制造方法
CN102564658A (zh) * 2010-12-17 2012-07-11 三菱电机株式会社 半导体压力传感器及其制造方法

Also Published As

Publication number Publication date
US9117932B2 (en) 2015-08-25
JP5832417B2 (ja) 2015-12-16
JP2014115153A (ja) 2014-06-26
CN103872050A (zh) 2014-06-18
US20140159122A1 (en) 2014-06-12

Similar Documents

Publication Publication Date Title
CN103872050B (zh) 半导体压力传感器及其制造方法
CN104124244B (zh) 半导体压力传感器及其制造方法
US8227877B2 (en) Semiconductor bio-sensors and methods of manufacturing the same
US7919814B2 (en) Semiconductor device with integrated circuit electrically connected to a MEMS sensor by a through-electrode
US8878306B2 (en) Semiconductor device
CN104766824B (zh) 半导体装置的制造方法
JP6532429B2 (ja) 半導体圧力センサ
US5733812A (en) Semiconductor device with a field-effect transistor having a lower resistance impurity diffusion layer, and method of manufacturing the same
JP4705964B2 (ja) 半導体装置
CN105987783A (zh) 半导体压力传感器及其制造方法
JP2015129699A5 (enExample)
US10393557B2 (en) Thermal fluid flow sensor
TWI575697B (zh) 半導體積體電路裝置
TWI384566B (zh) 半導體生物感測器及其製造方法
US7906815B2 (en) Increased reliability for a contact structure to connect an active region with a polysilicon line
US20240162097A1 (en) Process monitoring structures for via etch processes for semiconductor devices
CN102313764B (zh) 半导体生物传感器及其制造方法
JPH07183518A (ja) 半導体装置及びその製造方法
JP2010123735A (ja) 半導体装置
JP2014127695A (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170104

Termination date: 20211209