JP2015216176A5 - - Google Patents
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- Publication number
- JP2015216176A5 JP2015216176A5 JP2014097110A JP2014097110A JP2015216176A5 JP 2015216176 A5 JP2015216176 A5 JP 2015216176A5 JP 2014097110 A JP2014097110 A JP 2014097110A JP 2014097110 A JP2014097110 A JP 2014097110A JP 2015216176 A5 JP2015216176 A5 JP 2015216176A5
- Authority
- JP
- Japan
- Prior art keywords
- resist pattern
- forming
- manufacturing
- semiconductor device
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 5
- 125000006850 spacer group Chemical group 0.000 claims description 5
- 238000000034 method Methods 0.000 claims 4
- 238000004380 ashing Methods 0.000 claims 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 2
- 238000005406 washing Methods 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 1
- -1 ammonia peroxide Chemical class 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 239000007772 electrode material Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000011241 protective layer Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014097110A JP2015216176A (ja) | 2014-05-08 | 2014-05-08 | 半導体装置の製造方法、及び、半導体装置 |
| US14/700,379 US9570362B2 (en) | 2014-05-08 | 2015-04-30 | Method for manufacturing semiconductor device and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014097110A JP2015216176A (ja) | 2014-05-08 | 2014-05-08 | 半導体装置の製造方法、及び、半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015216176A JP2015216176A (ja) | 2015-12-03 |
| JP2015216176A5 true JP2015216176A5 (enExample) | 2017-06-15 |
Family
ID=54368533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014097110A Pending JP2015216176A (ja) | 2014-05-08 | 2014-05-08 | 半導体装置の製造方法、及び、半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9570362B2 (enExample) |
| JP (1) | JP2015216176A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017183668A (ja) * | 2016-03-31 | 2017-10-05 | キヤノン株式会社 | 固体撮像装置の製造方法 |
| CN107068706A (zh) * | 2017-04-14 | 2017-08-18 | 上海华虹宏力半导体制造有限公司 | Cmos图像传感器的制造方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4961820A (en) * | 1988-06-09 | 1990-10-09 | Fujitsu Limited | Ashing method for removing an organic film on a substance of a semiconductor device under fabrication |
| US5201960A (en) * | 1991-02-04 | 1993-04-13 | Applied Photonics Research, Inc. | Method for removing photoresist and other adherent materials from substrates |
| JPH0992827A (ja) | 1995-09-27 | 1997-04-04 | Sony Corp | 半導体装置の製造方法 |
| US5759746A (en) * | 1996-05-24 | 1998-06-02 | Kabushiki Kaisha Toshiba | Fabrication process using a thin resist |
| US6074569A (en) * | 1997-12-09 | 2000-06-13 | Hughes Electronics Corporation | Stripping method for photoresist used as mask in Ch4 /H2 based reactive ion etching (RIE) of compound semiconductors |
| US6429142B1 (en) * | 1999-02-23 | 2002-08-06 | Taiwan Semiconductor Manufacturing Company | In-situ photoresist removal by an attachable chamber with light source |
| JP2003152176A (ja) * | 2001-11-14 | 2003-05-23 | Matsushita Electric Ind Co Ltd | 半導体装置の洗浄方法及びその製造方法 |
| US6579809B1 (en) * | 2002-05-16 | 2003-06-17 | Advanced Micro Devices, Inc. | In-situ gate etch process for fabrication of a narrow gate transistor structure with a high-k gate dielectric |
| JP4108445B2 (ja) * | 2002-10-31 | 2008-06-25 | 富士通株式会社 | 半導体装置の製造方法 |
| JP2004165464A (ja) * | 2002-11-14 | 2004-06-10 | Sony Corp | 半導体装置の製造方法 |
| KR100508756B1 (ko) | 2003-03-12 | 2005-08-17 | 삼성전자주식회사 | 반도체 장치의 트랜지스터 형성 방법 |
| JP4011024B2 (ja) * | 2004-01-30 | 2007-11-21 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| JP2005277146A (ja) | 2004-03-25 | 2005-10-06 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP4128574B2 (ja) * | 2005-03-28 | 2008-07-30 | 富士通株式会社 | 半導体装置の製造方法 |
| JP2009170554A (ja) | 2008-01-11 | 2009-07-30 | Panasonic Corp | 半導体装置の製造方法 |
| JP2009277771A (ja) | 2008-05-13 | 2009-11-26 | Panasonic Corp | 半導体装置とその製造方法 |
| JP5315784B2 (ja) | 2008-05-14 | 2013-10-16 | 日本電気株式会社 | 半導体装置 |
| JP5933953B2 (ja) * | 2011-10-06 | 2016-06-15 | キヤノン株式会社 | 半導体装置の製造方法 |
-
2014
- 2014-05-08 JP JP2014097110A patent/JP2015216176A/ja active Pending
-
2015
- 2015-04-30 US US14/700,379 patent/US9570362B2/en not_active Expired - Fee Related
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