JP2015216176A - 半導体装置の製造方法、及び、半導体装置 - Google Patents
半導体装置の製造方法、及び、半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000005468 ion implantation Methods 0.000 claims abstract description 63
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- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 32
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 30
- 230000001681 protective effect Effects 0.000 claims description 54
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 24
- 239000007772 electrode material Substances 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 12
- 238000005406 washing Methods 0.000 claims description 11
- 238000002513 implantation Methods 0.000 claims description 6
- 238000003384 imaging method Methods 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 10
- 239000000203 mixture Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 67
- 229920002120 photoresistant polymer Polymers 0.000 description 55
- 125000006850 spacer group Chemical group 0.000 description 29
- 238000005530 etching Methods 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 238000002955 isolation Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
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- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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Abstract
Description
半導体基板の上に形成された第1絶縁膜の上にゲート電極を形成する工程と、
前記半導体基板にイオン注入を行って第1の拡散領域を形成する第1の注入工程と、
前記第1の注入工程の後に、前記半導体基板の上に第2絶縁膜を形成する工程とを含み、
前記第1の注入工程は、
前記イオン注入を行うための第1のレジストパターンを形成する工程と、
前記第1のレジストパターンをマスクとして前記イオン注入を行う工程と、
前記第1のレジストパターンを除去する第1の除去工程であって、前記第1のレジストパターンのうち前記イオン注入により硬化した部分をアッシングにより除去した後、残りの部分を硫酸過水洗浄により除去する工程とを含むことを特徴とする。
本発明の一つの実施形態は、MOSトランジスタを含む半導体装置の製造方法に関する。図1を参照しながら、本発明の一つの実施形態として、MOSトランジスタを含む半導体装置として、固体撮像装置の例を説明する。
以下、サイドスペーサ形成後のフォトレジストパターンの形成方法について、実施形態1を補充する。本実施形態では、サイドスペーサ形成以降の工程で、N型拡散領域、P型拡散領域を形成するイオン注入工程では、使用するフォトレジストパターンの大きさを設計上許容されうる最小とすることを特徴とする。これらのイオン注入工程は、一般的にN+ソース/ドレイン及びP+ソース/ドレイン形成を目的としており、図6(b)、図7(b)との関連で説明したとおりイオン注入のドーズ量は15乗台と高くなる。ドーズ量が高いため、イオン注入中にフォトレジストパターンが導電性を有し、一種のアンテナ効果が生じる。このアンテナ効果によりチャージアップダメージを与えうる。アンテナ効果は、電荷を蓄積する導電体の面積が大きい場合に増大する。そのため、アンテナとなり得るレジストの面積を最小とすることで、チャージアップダメージを抑制することができる。
以下、サイドスペーサ形成前のフォトレジストパターンの形成方法について、実施形態1および2を補充する。本実施形態では、フォトレジストの非硬化層を残すためのプロセスマージンを広げることを目的として、サイドスペーサ形成前のイオン注入工程で使用するマスクのレイアウトデータを、イオン注入の注入領域を包含する方を用いて演算処理により算出する。
Claims (11)
- MOSトランジスタを含む半導体装置の製造方法であって、
半導体基板の上に形成された第1絶縁膜の上にゲート電極を形成する工程と、
前記半導体基板にイオン注入を行って第1の拡散領域を形成する第1の注入工程と、
前記半導体基板の上に第2絶縁膜を形成する工程と、
をこの順に含み、
前記第1の注入工程は、
前記イオン注入を行うための第1のレジストパターンを形成する工程と、
前記第1のレジストパターンをマスクとして前記イオン注入を行う工程と、
前記第1のレジストパターンを除去する第1の除去工程であって、前記第1のレジストパターンのうち前記イオン注入により硬化した部分をアッシングにより除去した後、残りの部分を硫酸過水洗浄により除去する工程と
を含むことを特徴とする半導体装置の製造方法。 - 前記ゲート電極を形成する工程では、前記第1絶縁膜の上に形成されたゲート電極材料層がパターニングされるとともに、少なくとも、前記ゲート電極の側面の下部と、前記第1絶縁膜のうち前記側面に隣接する部分とを保護する保護膜が形成され、
前記第2絶縁膜を形成する工程では、前記保護膜を覆うように前記第2絶縁膜が形成される
ことを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記第1の除去工程では、前記保護膜に対してエッチャントとならないガスを使用して前記アッシングを行うことを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記第1の除去工程では、O2ガスを使用して前記アッシングを行うことを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置の製造方法。
- 前記イオン注入は、1×1014atoms/cm2から5×1014atoms/cm2の範囲のドーズ量で行われることを特徴とする請求項1乃至4のいずれか1項に記載の半導体装置の製造方法。
- 前記第2絶縁膜が形成された後に、前記半導体基板にさらにイオン注入を行って第2の拡散領域を形成する第2の注入工程を更に含み、
前記第2の注入工程は、
イオン注入を行うための第2のレジストパターンを形成する工程と、
前記第2のレジストパターンをマスクとしてイオン注入を行う工程と、
前記第2のレジストパターンを除去する第2の除去工程であって、前記第2のレジストパターンに対してアッシングを行った後、レジストの残渣を洗浄により除去する工程と
を含むことを特徴とする請求項1乃至5のいずれか1項に記載の半導体装置の製造方法。 - 前記残渣の洗浄は、アンモニア過水洗浄またはフッ酸系の洗浄を含むことを特徴とする請求項6に記載の半導体装置の製造方法。
- 前記第2のレジストパターンは、該第2のレジストパターンによりマスクすべき領域と、予め規定されたマージンとにより特定される大きさを有することを特徴とする請求項6又は7に記載の半導体装置の製造方法。
- 前記第2の注入工程におけるイオン注入は、1×1015atoms/cm2から6×1015atoms/cm2の範囲のドーズ量で行われることを特徴とする請求項6乃至8のいずれか1項に記載の半導体装置の製造方法。
- 前記半導体装置は、固体撮像装置を含む、
ことを特徴とする請求項1乃至9のいずれか1項に記載の半導体装置の製造方法。 - MOSトランジスタを含む半導体装置であって、
半導体基板の上に形成された第1絶縁膜の上に形成された前記MOSトランジスタのゲート電極と、
前記半導体基板に形成された拡散領域と、
前記第1絶縁膜の上に形成された、前記ゲート電極の側面の下部と、前記第1絶縁膜のうち前記側面に隣接する部分とを保護する保護膜と、
前記保護膜を覆うように形成された第2絶縁膜と
を備え、
前記第1の絶縁膜は、前記ゲート電極と前記保護膜との下において前記半導体基板上で平坦に形成されていることを特徴とする半導体装置。
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JP2014097110A JP2015216176A (ja) | 2014-05-08 | 2014-05-08 | 半導体装置の製造方法、及び、半導体装置 |
US14/700,379 US9570362B2 (en) | 2014-05-08 | 2015-04-30 | Method for manufacturing semiconductor device and semiconductor device |
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JP2017183668A (ja) * | 2016-03-31 | 2017-10-05 | キヤノン株式会社 | 固体撮像装置の製造方法 |
CN107068706A (zh) * | 2017-04-14 | 2017-08-18 | 上海华虹宏力半导体制造有限公司 | Cmos图像传感器的制造方法 |
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