JP2015216176A - 半導体装置の製造方法、及び、半導体装置 - Google Patents

半導体装置の製造方法、及び、半導体装置 Download PDF

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Publication number
JP2015216176A
JP2015216176A JP2014097110A JP2014097110A JP2015216176A JP 2015216176 A JP2015216176 A JP 2015216176A JP 2014097110 A JP2014097110 A JP 2014097110A JP 2014097110 A JP2014097110 A JP 2014097110A JP 2015216176 A JP2015216176 A JP 2015216176A
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JP
Japan
Prior art keywords
semiconductor device
insulating film
ion implantation
gate electrode
manufacturing
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Pending
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JP2014097110A
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English (en)
Japanese (ja)
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JP2015216176A5 (enExample
Inventor
英明 石野
Hideaki Ishino
英明 石野
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014097110A priority Critical patent/JP2015216176A/ja
Priority to US14/700,379 priority patent/US9570362B2/en
Publication of JP2015216176A publication Critical patent/JP2015216176A/ja
Publication of JP2015216176A5 publication Critical patent/JP2015216176A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/671—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2014097110A 2014-05-08 2014-05-08 半導体装置の製造方法、及び、半導体装置 Pending JP2015216176A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014097110A JP2015216176A (ja) 2014-05-08 2014-05-08 半導体装置の製造方法、及び、半導体装置
US14/700,379 US9570362B2 (en) 2014-05-08 2015-04-30 Method for manufacturing semiconductor device and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014097110A JP2015216176A (ja) 2014-05-08 2014-05-08 半導体装置の製造方法、及び、半導体装置

Publications (2)

Publication Number Publication Date
JP2015216176A true JP2015216176A (ja) 2015-12-03
JP2015216176A5 JP2015216176A5 (enExample) 2017-06-15

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JP2014097110A Pending JP2015216176A (ja) 2014-05-08 2014-05-08 半導体装置の製造方法、及び、半導体装置

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US (1) US9570362B2 (enExample)
JP (1) JP2015216176A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017183668A (ja) * 2016-03-31 2017-10-05 キヤノン株式会社 固体撮像装置の製造方法
CN107068706A (zh) * 2017-04-14 2017-08-18 上海华虹宏力半导体制造有限公司 Cmos图像传感器的制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003152176A (ja) * 2001-11-14 2003-05-23 Matsushita Electric Ind Co Ltd 半導体装置の洗浄方法及びその製造方法
US20040102047A1 (en) * 2002-10-31 2004-05-27 Fujitsu Limited Semiconductor device fabrication method
JP2004165464A (ja) * 2002-11-14 2004-06-10 Sony Corp 半導体装置の製造方法
US20060214243A1 (en) * 2005-03-28 2006-09-28 Fujitsu Limited Semiconductor device and method for fabricating the same
US20130089975A1 (en) * 2011-10-06 2013-04-11 Canon Kabushiki Kaisha Method for manufacturing semiconductor device

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
US4961820A (en) * 1988-06-09 1990-10-09 Fujitsu Limited Ashing method for removing an organic film on a substance of a semiconductor device under fabrication
US5201960A (en) * 1991-02-04 1993-04-13 Applied Photonics Research, Inc. Method for removing photoresist and other adherent materials from substrates
JPH0992827A (ja) 1995-09-27 1997-04-04 Sony Corp 半導体装置の製造方法
US5759746A (en) * 1996-05-24 1998-06-02 Kabushiki Kaisha Toshiba Fabrication process using a thin resist
US6074569A (en) * 1997-12-09 2000-06-13 Hughes Electronics Corporation Stripping method for photoresist used as mask in Ch4 /H2 based reactive ion etching (RIE) of compound semiconductors
US6429142B1 (en) * 1999-02-23 2002-08-06 Taiwan Semiconductor Manufacturing Company In-situ photoresist removal by an attachable chamber with light source
US6579809B1 (en) * 2002-05-16 2003-06-17 Advanced Micro Devices, Inc. In-situ gate etch process for fabrication of a narrow gate transistor structure with a high-k gate dielectric
KR100508756B1 (ko) 2003-03-12 2005-08-17 삼성전자주식회사 반도체 장치의 트랜지스터 형성 방법
JP4011024B2 (ja) * 2004-01-30 2007-11-21 株式会社ルネサステクノロジ 半導体装置およびその製造方法
JP2005277146A (ja) 2004-03-25 2005-10-06 Fujitsu Ltd 半導体装置の製造方法
JP2009170554A (ja) 2008-01-11 2009-07-30 Panasonic Corp 半導体装置の製造方法
JP2009277771A (ja) 2008-05-13 2009-11-26 Panasonic Corp 半導体装置とその製造方法
JP5315784B2 (ja) 2008-05-14 2013-10-16 日本電気株式会社 半導体装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003152176A (ja) * 2001-11-14 2003-05-23 Matsushita Electric Ind Co Ltd 半導体装置の洗浄方法及びその製造方法
US20030153170A1 (en) * 2001-11-14 2003-08-14 Matsushita Electric Industrial Co., Ltd. Method for cleaning semiconductor device and method for fabricating the same
US20040102047A1 (en) * 2002-10-31 2004-05-27 Fujitsu Limited Semiconductor device fabrication method
JP2004153076A (ja) * 2002-10-31 2004-05-27 Fujitsu Ltd 半導体装置の製造方法
JP2004165464A (ja) * 2002-11-14 2004-06-10 Sony Corp 半導体装置の製造方法
US20060214243A1 (en) * 2005-03-28 2006-09-28 Fujitsu Limited Semiconductor device and method for fabricating the same
JP2006278488A (ja) * 2005-03-28 2006-10-12 Fujitsu Ltd 半導体装置及びその製造方法
US20130089975A1 (en) * 2011-10-06 2013-04-11 Canon Kabushiki Kaisha Method for manufacturing semiconductor device
JP2013084694A (ja) * 2011-10-06 2013-05-09 Canon Inc 半導体装置の製造方法

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US20150325609A1 (en) 2015-11-12

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