JP2017504205A5 - - Google Patents
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- Publication number
- JP2017504205A5 JP2017504205A5 JP2016544064A JP2016544064A JP2017504205A5 JP 2017504205 A5 JP2017504205 A5 JP 2017504205A5 JP 2016544064 A JP2016544064 A JP 2016544064A JP 2016544064 A JP2016544064 A JP 2016544064A JP 2017504205 A5 JP2017504205 A5 JP 2017504205A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- gate
- dielectric
- pmos
- nmos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 59
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 55
- 239000002184 metal Substances 0.000 claims 55
- 239000000463 material Substances 0.000 claims 27
- 238000000151 deposition Methods 0.000 claims 25
- 238000005530 etching Methods 0.000 claims 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 18
- 229920005591 polysilicon Polymers 0.000 claims 17
- 229920002120 photoresistant polymer Polymers 0.000 claims 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 6
- 229910052760 oxygen Inorganic materials 0.000 claims 6
- 239000001301 oxygen Substances 0.000 claims 6
- 239000003989 dielectric material Substances 0.000 claims 5
- 238000000137 annealing Methods 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 239000000945 filler Substances 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 238000002955 isolation Methods 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361922498P | 2013-12-31 | 2013-12-31 | |
| US61/922,498 | 2013-12-31 | ||
| US14/567,507 | 2014-12-11 | ||
| US14/567,507 US9070785B1 (en) | 2013-12-31 | 2014-12-11 | High-k / metal gate CMOS transistors with TiN gates |
| PCT/US2014/073032 WO2015103412A1 (en) | 2013-12-31 | 2014-12-31 | High-k/metal gate cmos transistors with tin gates |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017504205A JP2017504205A (ja) | 2017-02-02 |
| JP2017504205A5 true JP2017504205A5 (enExample) | 2018-02-15 |
| JP6709732B2 JP6709732B2 (ja) | 2020-06-17 |
Family
ID=53441843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016544064A Active JP6709732B2 (ja) | 2013-12-31 | 2014-12-31 | ＴｉＮゲートを備えた高ｋ／金属ゲートＣＭＯＳトランジスタ |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9070785B1 (enExample) |
| EP (1) | EP3090445A4 (enExample) |
| JP (1) | JP6709732B2 (enExample) |
| CN (1) | CN105874588B (enExample) |
| WO (1) | WO2015103412A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9070785B1 (en) * | 2013-12-31 | 2015-06-30 | Texas Instruments Incorporated | High-k / metal gate CMOS transistors with TiN gates |
| US9466492B2 (en) * | 2014-05-02 | 2016-10-11 | International Business Machines Corporation | Method of lateral oxidation of NFET and PFET high-K gate stacks |
| US9859392B2 (en) | 2015-09-21 | 2018-01-02 | Samsung Electronics Co., Ltd. | Integrated circuit device and method of manufacturing the same |
| US9941377B2 (en) | 2015-12-29 | 2018-04-10 | Qualcomm Incorporated | Semiconductor devices with wider field gates for reduced gate resistance |
| US9859129B2 (en) * | 2016-02-26 | 2018-01-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method of the same |
| CN107887335B (zh) * | 2017-11-14 | 2020-08-21 | 上海华力微电子有限公司 | 一种金属栅极制作方法 |
| KR102403723B1 (ko) | 2017-12-15 | 2022-05-31 | 삼성전자주식회사 | 반도체 장치 및 그의 제조 방법 |
| KR102418061B1 (ko) * | 2018-01-09 | 2022-07-06 | 삼성전자주식회사 | 반도체 장치 |
| KR20210132026A (ko) * | 2020-04-22 | 2021-11-03 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 가변 커패시터 |
| US12362183B2 (en) * | 2022-01-27 | 2025-07-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method for fabricating the same |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100476926B1 (ko) * | 2002-07-02 | 2005-03-17 | 삼성전자주식회사 | 반도체 소자의 듀얼 게이트 형성방법 |
| JP4854245B2 (ja) * | 2005-09-22 | 2012-01-18 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| US7790592B2 (en) * | 2007-10-30 | 2010-09-07 | International Business Machines Corporation | Method to fabricate metal gate high-k devices |
| US7902032B2 (en) * | 2008-01-21 | 2011-03-08 | Texas Instruments Incorporated | Method for forming strained channel PMOS devices and integrated circuits therefrom |
| JP2009267180A (ja) * | 2008-04-28 | 2009-11-12 | Renesas Technology Corp | 半導体装置 |
| JP4602440B2 (ja) * | 2008-06-12 | 2010-12-22 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| JP2010021200A (ja) * | 2008-07-08 | 2010-01-28 | Renesas Technology Corp | 半導体装置の製造方法 |
| US9024299B2 (en) * | 2008-10-14 | 2015-05-05 | Imec | Method for fabricating a dual work function semiconductor device and the device made thereof |
| US8643113B2 (en) * | 2008-11-21 | 2014-02-04 | Texas Instruments Incorporated | Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer |
| US7691701B1 (en) * | 2009-01-05 | 2010-04-06 | International Business Machines Corporation | Method of forming gate stack and structure thereof |
| WO2011068016A1 (en) * | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2012099517A (ja) * | 2010-10-29 | 2012-05-24 | Sony Corp | 半導体装置及び半導体装置の製造方法 |
| US9384962B2 (en) * | 2011-04-07 | 2016-07-05 | United Microelectronics Corp. | Oxygen treatment of replacement work-function metals in CMOS transistor gates |
| CN102915917B (zh) * | 2011-08-03 | 2015-02-11 | 中国科学院微电子研究所 | 一种互补型金属氧化物半导体场效应晶体管的制备方法 |
| US20130082332A1 (en) * | 2011-09-30 | 2013-04-04 | Globalfoundries Singapore Pte. Ltd. | Method for forming n-type and p-type metal-oxide-semiconductor gates separately |
| US20130302974A1 (en) * | 2012-05-08 | 2013-11-14 | Globalfoundries Inc. | Replacement gate electrode fill at reduced temperatures |
| US8921178B2 (en) * | 2012-05-16 | 2014-12-30 | Renesas Electronics Corporation | Semiconductor devices with self-aligned source drain contacts and methods for making the same |
| US9070785B1 (en) * | 2013-12-31 | 2015-06-30 | Texas Instruments Incorporated | High-k / metal gate CMOS transistors with TiN gates |
-
2014
- 2014-12-11 US US14/567,507 patent/US9070785B1/en active Active
- 2014-12-31 CN CN201480071998.2A patent/CN105874588B/zh active Active
- 2014-12-31 WO PCT/US2014/073032 patent/WO2015103412A1/en not_active Ceased
- 2014-12-31 EP EP14876620.7A patent/EP3090445A4/en active Pending
- 2014-12-31 JP JP2016544064A patent/JP6709732B2/ja active Active
-
2015
- 2015-05-28 US US14/724,185 patent/US9721847B2/en active Active
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