CN105874588B - 具有氮化钛栅极的高k/金属栅极cmos晶体管 - Google Patents

具有氮化钛栅极的高k/金属栅极cmos晶体管 Download PDF

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CN105874588B
CN105874588B CN201480071998.2A CN201480071998A CN105874588B CN 105874588 B CN105874588 B CN 105874588B CN 201480071998 A CN201480071998 A CN 201480071998A CN 105874588 B CN105874588 B CN 105874588B
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dielectric
transistor
pmos
nmos
gate
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CN105874588A (zh
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H·尼米
B·K·柯克帕特里克
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Texas Instruments Inc
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Texas Instruments Inc
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
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    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
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    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
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    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
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    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
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    • H10D84/0181—Manufacturing their gate insulating layers

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  • General Chemical & Material Sciences (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN201480071998.2A 2013-12-31 2014-12-31 具有氮化钛栅极的高k/金属栅极cmos晶体管 Active CN105874588B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361922498P 2013-12-31 2013-12-31
US61/922,498 2013-12-31
US14/567,507 2014-12-11
US14/567,507 US9070785B1 (en) 2013-12-31 2014-12-11 High-k / metal gate CMOS transistors with TiN gates
PCT/US2014/073032 WO2015103412A1 (en) 2013-12-31 2014-12-31 High-k/metal gate cmos transistors with tin gates

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CN105874588A CN105874588A (zh) 2016-08-17
CN105874588B true CN105874588B (zh) 2019-05-14

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US (2) US9070785B1 (enExample)
EP (1) EP3090445A4 (enExample)
JP (1) JP6709732B2 (enExample)
CN (1) CN105874588B (enExample)
WO (1) WO2015103412A1 (enExample)

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US9070785B1 (en) * 2013-12-31 2015-06-30 Texas Instruments Incorporated High-k / metal gate CMOS transistors with TiN gates
US9466492B2 (en) * 2014-05-02 2016-10-11 International Business Machines Corporation Method of lateral oxidation of NFET and PFET high-K gate stacks
US9859392B2 (en) 2015-09-21 2018-01-02 Samsung Electronics Co., Ltd. Integrated circuit device and method of manufacturing the same
US9941377B2 (en) 2015-12-29 2018-04-10 Qualcomm Incorporated Semiconductor devices with wider field gates for reduced gate resistance
US9859129B2 (en) * 2016-02-26 2018-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method of the same
CN107887335B (zh) * 2017-11-14 2020-08-21 上海华力微电子有限公司 一种金属栅极制作方法
KR102403723B1 (ko) 2017-12-15 2022-05-31 삼성전자주식회사 반도체 장치 및 그의 제조 방법
KR102418061B1 (ko) * 2018-01-09 2022-07-06 삼성전자주식회사 반도체 장치
KR20210132026A (ko) * 2020-04-22 2021-11-03 양쯔 메모리 테크놀로지스 씨오., 엘티디. 가변 커패시터
US12362183B2 (en) * 2022-01-27 2025-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method for fabricating the same

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EP3090445A1 (en) 2016-11-09
CN105874588A (zh) 2016-08-17
WO2015103412A1 (en) 2015-07-09
US9721847B2 (en) 2017-08-01
US9070785B1 (en) 2015-06-30
JP6709732B2 (ja) 2020-06-17
JP2017504205A (ja) 2017-02-02
EP3090445A4 (en) 2017-08-23
US20150287643A1 (en) 2015-10-08
US20150187653A1 (en) 2015-07-02

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