JP2014063279A5 - - Google Patents

Download PDF

Info

Publication number
JP2014063279A5
JP2014063279A5 JP2012207076A JP2012207076A JP2014063279A5 JP 2014063279 A5 JP2014063279 A5 JP 2014063279A5 JP 2012207076 A JP2012207076 A JP 2012207076A JP 2012207076 A JP2012207076 A JP 2012207076A JP 2014063279 A5 JP2014063279 A5 JP 2014063279A5
Authority
JP
Japan
Prior art keywords
access
signal
period
semiconductor device
operation state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012207076A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014063279A (ja
JP6003449B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2012207076A priority Critical patent/JP6003449B2/ja
Priority claimed from JP2012207076A external-priority patent/JP6003449B2/ja
Priority to US14/028,249 priority patent/US9218855B2/en
Publication of JP2014063279A publication Critical patent/JP2014063279A/ja
Publication of JP2014063279A5 publication Critical patent/JP2014063279A5/ja
Application granted granted Critical
Publication of JP6003449B2 publication Critical patent/JP6003449B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2012207076A 2012-09-20 2012-09-20 半導体装置及びメモリの制御方法 Active JP6003449B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012207076A JP6003449B2 (ja) 2012-09-20 2012-09-20 半導体装置及びメモリの制御方法
US14/028,249 US9218855B2 (en) 2012-09-20 2013-09-16 Semiconductor device and memory control method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012207076A JP6003449B2 (ja) 2012-09-20 2012-09-20 半導体装置及びメモリの制御方法

Publications (3)

Publication Number Publication Date
JP2014063279A JP2014063279A (ja) 2014-04-10
JP2014063279A5 true JP2014063279A5 (https=) 2015-07-16
JP6003449B2 JP6003449B2 (ja) 2016-10-05

Family

ID=50274336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012207076A Active JP6003449B2 (ja) 2012-09-20 2012-09-20 半導体装置及びメモリの制御方法

Country Status (2)

Country Link
US (1) US9218855B2 (https=)
JP (1) JP6003449B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6341795B2 (ja) * 2014-08-05 2018-06-13 ルネサスエレクトロニクス株式会社 マイクロコンピュータ及びマイクロコンピュータシステム
JP2016036944A (ja) * 2014-08-06 2016-03-22 シャープ株式会社 画像形成装置
KR102319392B1 (ko) * 2015-06-09 2021-11-01 에스케이하이닉스 주식회사 메모리 시스템 및 이의 동작 방법
US11200001B2 (en) * 2020-05-15 2021-12-14 Micron Technology, Inc. Management of power during memory device reset and initialization

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01260690A (ja) * 1988-04-08 1989-10-17 Fujitsu Ltd メモリアクセス制御方式
US5430881A (en) * 1990-12-28 1995-07-04 Dia Semicon Systems Incorporated Supervisory control method and power saving control unit for computer system
JP2868650B2 (ja) * 1991-07-24 1999-03-10 キヤノン株式会社 表示装置
US5835435A (en) * 1997-12-02 1998-11-10 Intel Corporation Method and apparatus for dynamically placing portions of a memory in a reduced power consumtion state
JPH11184554A (ja) * 1997-12-24 1999-07-09 Mitsubishi Electric Corp クロック制御タイプ情報処理装置
JP2002082829A (ja) * 2000-09-06 2002-03-22 Nec Kofu Ltd 消費電力制御装置及び消費電力制御方法
JP2002244917A (ja) * 2001-02-15 2002-08-30 Matsushita Electric Ind Co Ltd アクセス管理装置、およびプログラム
JP4458699B2 (ja) * 2001-03-06 2010-04-28 株式会社東芝 半導体集積回路
JP4765222B2 (ja) * 2001-08-09 2011-09-07 日本電気株式会社 Ｄｒａｍ装置
JP4104886B2 (ja) 2002-03-20 2008-06-18 株式会社ルネサステクノロジ 半導体装置
JP2004103153A (ja) * 2002-09-11 2004-04-02 Seiko Epson Corp 不揮発性半導体記憶装置の電圧発生回路
JP2005115906A (ja) * 2003-09-19 2005-04-28 Ricoh Co Ltd メモリ駆動システム
JP2005340879A (ja) * 2004-05-24 2005-12-08 Ricoh Co Ltd 画像形成装置
JP2005339310A (ja) 2004-05-28 2005-12-08 Renesas Technology Corp 半導体装置
JP2006099569A (ja) * 2004-09-30 2006-04-13 Kyocera Mita Corp メモリインタフェース回路及びクロック制御方法
JP2006171952A (ja) * 2004-12-14 2006-06-29 Renesas Technology Corp 半導体集積回路装置
JP4834434B2 (ja) * 2006-03-17 2011-12-14 富士通株式会社 記憶装置の電源制御方法
JP4851962B2 (ja) 2007-02-28 2012-01-11 株式会社東芝 メモリシステム
JP5228468B2 (ja) * 2007-12-17 2013-07-03 富士通セミコンダクター株式会社 システム装置およびシステム装置の動作方法
US9032235B2 (en) * 2012-07-31 2015-05-12 Kabushiki Kaisha Toshiba Semiconductor storage device and method for controlling the semiconductor storage device

Similar Documents

Publication Publication Date Title
TWI673595B (zh) 半導體裝置之輸出時序控制電路及其方法
US9318176B2 (en) Semiconductor integrated circuit
US10162406B1 (en) Systems and methods for frequency mode detection and implementation
US9697145B2 (en) Memory interface system
JP6107933B2 (ja) 接続制御装置、情報処理装置、及び接続制御方法
TW201533665A (zh) 汽車用的控制裝置
US20150194196A1 (en) Memory system with high performance and high power efficiency and control method of the same
US20210034442A1 (en) Inter-processor communication
JP2014063279A5 (https=)
US9360921B2 (en) Semiconductor integrated circuit, information processing apparatus, and control method
US9378791B2 (en) Apparatuses and methods for controlling a clock signal provided to a clock tree
KR102083374B1 (ko) 반도체 장치 및 그의 제어 방법
KR20060050121A (ko) 마이크로 컴퓨터
US9218855B2 (en) Semiconductor device and memory control method
KR101092999B1 (ko) 반도체 메모리 장치 및 그 동작 방법
US9557787B2 (en) Data processor and data processing system
JP6726300B2 (ja) 電源回路
KR102184726B1 (ko) 반도체 장치 및 그를 포함하는 반도체 시스템
JP2011008779A (ja) メモリシステム
KR102106064B1 (ko) 반도체 장치 및 이의 제어 방법
JP5439661B2 (ja) 半導体装置
KR102181937B1 (ko) 반도체 시스템
CN102693197B (zh) 内存控制器读选通使能微调寄存器的最小单元计算方法
US9201595B2 (en) High speed read access memory array with variation tolerant bypass scheme with protection circuit
WO2012070170A1 (ja) 電源制御システム及び電源制御方法