JP2014033107A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2014033107A5 JP2014033107A5 JP2012173188A JP2012173188A JP2014033107A5 JP 2014033107 A5 JP2014033107 A5 JP 2014033107A5 JP 2012173188 A JP2012173188 A JP 2012173188A JP 2012173188 A JP2012173188 A JP 2012173188A JP 2014033107 A5 JP2014033107 A5 JP 2014033107A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- photoelectric conversion
- film
- imaging device
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 claims 20
- 238000003384 imaging method Methods 0.000 claims 17
- 239000000758 substrate Substances 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 6
- 238000000034 method Methods 0.000 claims 5
- 238000000926 separation method Methods 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 claims 2
- 229910052735 hafnium Inorganic materials 0.000 claims 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 claims 2
- ZIKATJAYWZUJPY-UHFFFAOYSA-N thulium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tm+3].[Tm+3] ZIKATJAYWZUJPY-UHFFFAOYSA-N 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- UPEMFLOMQVFMCZ-UHFFFAOYSA-N [O--].[O--].[O--].[Pm+3].[Pm+3] Chemical compound [O--].[O--].[O--].[Pm+3].[Pm+3] UPEMFLOMQVFMCZ-UHFFFAOYSA-N 0.000 claims 1
- 239000006229 carbon black Substances 0.000 claims 1
- 229910000420 cerium oxide Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 claims 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 229910001940 europium oxide Inorganic materials 0.000 claims 1
- 229940075616 europium oxide Drugs 0.000 claims 1
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 claims 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 claims 1
- 229940075613 gadolinium oxide Drugs 0.000 claims 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- -1 hafnium nitride Chemical class 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical group [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- JYTUFVYWTIKZGR-UHFFFAOYSA-N holmium oxide Inorganic materials [O][Ho]O[Ho][O] JYTUFVYWTIKZGR-UHFFFAOYSA-N 0.000 claims 1
- OWCYYNSBGXMRQN-UHFFFAOYSA-N holmium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ho+3].[Ho+3] OWCYYNSBGXMRQN-UHFFFAOYSA-N 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 229910003443 lutetium oxide Inorganic materials 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims 1
- MPARYNQUYZOBJM-UHFFFAOYSA-N oxo(oxolutetiooxy)lutetium Chemical compound O=[Lu]O[Lu]=O MPARYNQUYZOBJM-UHFFFAOYSA-N 0.000 claims 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims 1
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 238000005192 partition Methods 0.000 claims 1
- 229910003447 praseodymium oxide Inorganic materials 0.000 claims 1
- 229910001954 samarium oxide Inorganic materials 0.000 claims 1
- 229940075630 samarium oxide Drugs 0.000 claims 1
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 229910003451 terbium oxide Inorganic materials 0.000 claims 1
- SCRZPWWVSXWCMC-UHFFFAOYSA-N terbium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tb+3].[Tb+3] SCRZPWWVSXWCMC-UHFFFAOYSA-N 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910003454 ytterbium oxide Inorganic materials 0.000 claims 1
- 229940075624 ytterbium oxide Drugs 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012173188A JP6065448B2 (ja) | 2012-08-03 | 2012-08-03 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
| TW102126156A TWI637494B (zh) | 2012-08-03 | 2013-07-22 | 固態成像器件,用於製造固態成像器件之方法以及電子裝置 |
| KR1020207017435A KR102237324B1 (ko) | 2012-08-03 | 2013-07-25 | 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기 |
| US14/417,590 US9748296B2 (en) | 2012-08-03 | 2013-07-25 | Solid-state imaging device, method for producing solid-state imaging device and electronic apparatus |
| CN201380039862.9A CN104508821B (zh) | 2012-08-03 | 2013-07-25 | 固态成像装置、制造固态成像装置的方法和电子设备 |
| KR1020157002058A KR102126095B1 (ko) | 2012-08-03 | 2013-07-25 | 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기 |
| PCT/JP2013/004534 WO2014020871A1 (en) | 2012-08-03 | 2013-07-25 | Solid-state imaging device, method for producing solid-state imaging device and electronic apparatus |
| US15/656,873 US10229947B2 (en) | 2012-08-03 | 2017-07-21 | Solid-state imaging device, method for producing solid-state imaging device and electronic apparatus |
| US16/265,634 US10748949B2 (en) | 2012-08-03 | 2019-02-01 | Solid-state imaging device, method for producing solid-state imaging device and electronic apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012173188A JP6065448B2 (ja) | 2012-08-03 | 2012-08-03 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014033107A JP2014033107A (ja) | 2014-02-20 |
| JP2014033107A5 true JP2014033107A5 (enExample) | 2015-04-09 |
| JP6065448B2 JP6065448B2 (ja) | 2017-01-25 |
Family
ID=48949199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012173188A Active JP6065448B2 (ja) | 2012-08-03 | 2012-08-03 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US9748296B2 (enExample) |
| JP (1) | JP6065448B2 (enExample) |
| KR (2) | KR102126095B1 (enExample) |
| CN (1) | CN104508821B (enExample) |
| TW (1) | TWI637494B (enExample) |
| WO (1) | WO2014020871A1 (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6303803B2 (ja) * | 2013-07-03 | 2018-04-04 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
| JP6166640B2 (ja) * | 2013-10-22 | 2017-07-19 | キヤノン株式会社 | 固体撮像装置、その製造方法及びカメラ |
| JP2015106621A (ja) * | 2013-11-29 | 2015-06-08 | ソニー株式会社 | 固体撮像素子および製造方法、並びに電子機器 |
| JP2015216186A (ja) | 2014-05-09 | 2015-12-03 | ソニー株式会社 | 固体撮像装置および電子機器 |
| JP2016100347A (ja) | 2014-11-18 | 2016-05-30 | ソニー株式会社 | 固体撮像装置及びその製造方法、並びに電子機器 |
| JP6566734B2 (ja) * | 2015-06-11 | 2019-08-28 | キヤノン株式会社 | 固体撮像素子 |
| KR20170019542A (ko) * | 2015-08-11 | 2017-02-22 | 삼성전자주식회사 | 자동 초점 이미지 센서 |
| KR102623653B1 (ko) * | 2015-09-30 | 2024-01-10 | 가부시키가이샤 니콘 | 촬상 소자 및 촬상 장치 |
| JP2017168566A (ja) * | 2016-03-15 | 2017-09-21 | ソニー株式会社 | 固体撮像素子、および電子機器 |
| KR102582122B1 (ko) | 2016-07-11 | 2023-09-21 | 삼성전자주식회사 | 이미지 센서 및 이를 포함하는 전자 장치 |
| JP6768394B2 (ja) * | 2016-07-29 | 2020-10-14 | 株式会社ジャパンディスプレイ | 電子機器 |
| KR102589016B1 (ko) | 2016-08-25 | 2023-10-16 | 삼성전자주식회사 | 반도체 소자 |
| KR102604687B1 (ko) * | 2017-02-01 | 2023-11-20 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
| US10211244B2 (en) * | 2017-06-30 | 2019-02-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device with reflective structure and method for forming the same |
| US10943942B2 (en) * | 2017-11-10 | 2021-03-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device and method of forming the same |
| US11075242B2 (en) | 2017-11-27 | 2021-07-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices for image sensing |
| JP2020027884A (ja) | 2018-08-13 | 2020-02-20 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及び電子機器 |
| JP7366531B2 (ja) | 2018-10-29 | 2023-10-23 | キヤノン株式会社 | 光電変換装置および機器 |
| KR102677769B1 (ko) * | 2018-12-20 | 2024-06-24 | 삼성전자주식회사 | 후면조사형 이미지 센서 및 이를 포함하는 전자 기기 |
| TWI867078B (zh) * | 2019-11-19 | 2024-12-21 | 日商索尼半導體解決方案公司 | 固態攝像裝置及電子機器 |
| US11244979B2 (en) * | 2019-12-19 | 2022-02-08 | Omnivision Technologies, Inc. | Deep trench isolation (DTI) structure for CMOS image sensor |
| US11329086B2 (en) * | 2019-12-27 | 2022-05-10 | Omnivision Technologies, Inc. | Method and structure to improve image sensor crosstalk |
| JP7441086B2 (ja) * | 2020-03-23 | 2024-02-29 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
| DE112021002438T5 (de) * | 2020-04-20 | 2023-03-02 | Sony Semiconductor Solutions Corporation | Festkörperbildgebungselement und elektronische vorrichtung |
| KR102786345B1 (ko) | 2020-04-24 | 2025-03-24 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
| US11664403B2 (en) * | 2020-06-12 | 2023-05-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Manufacturing method of image sensor device having metal grid partially embedded in buffer layer |
| US20220384252A1 (en) * | 2021-05-26 | 2022-12-01 | Texas Instruments Incorporated | Through trench isolation for die |
| TWI796083B (zh) * | 2022-01-11 | 2023-03-11 | 力晶積成電子製造股份有限公司 | 影像感測器及其製造方法 |
| US12408448B2 (en) * | 2022-06-13 | 2025-09-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deep trench isolation structure and methods for fabrication thereof |
| CN114784033B (zh) * | 2022-06-20 | 2022-09-16 | 西安中科立德红外科技有限公司 | 基于半导体工艺的混合成像芯片及其制备方法 |
| JP2024163563A (ja) * | 2023-05-12 | 2024-11-22 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
| WO2025142145A1 (ja) * | 2023-12-25 | 2025-07-03 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置、光検出装置の製造方法及び電子機器 |
| CN119601531B (zh) * | 2024-08-30 | 2025-11-21 | 华虹半导体(无锡)有限公司 | 半导体器件及其形成方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6118142A (en) * | 1998-11-09 | 2000-09-12 | United Microelectronics Corp. | CMOS sensor |
| EP1420702B1 (en) | 2001-08-31 | 2005-04-20 | Boston Scientific Limited | Percutaneous pringle occlusion device |
| JP2005294647A (ja) * | 2004-04-01 | 2005-10-20 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
| JP2005294759A (ja) * | 2004-04-05 | 2005-10-20 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| KR100678269B1 (ko) * | 2004-10-18 | 2007-02-02 | 삼성전자주식회사 | 씨모스 방식의 이미지 센서와 그 제작 방법 |
| JP2006344644A (ja) * | 2005-06-07 | 2006-12-21 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびカメラならびに固体撮像装置の製造方法 |
| JP4992446B2 (ja) * | 2006-02-24 | 2012-08-08 | ソニー株式会社 | 固体撮像装置及びその製造方法、並びにカメラ |
| KR100764061B1 (ko) * | 2006-12-04 | 2007-10-08 | 삼성전자주식회사 | 이미지 센서 및 그 형성 방법 |
| JP5055026B2 (ja) * | 2007-05-31 | 2012-10-24 | 富士フイルム株式会社 | 撮像素子、撮像素子の製造方法、及び、撮像素子用の半導体基板 |
| JP4621719B2 (ja) | 2007-09-27 | 2011-01-26 | 富士フイルム株式会社 | 裏面照射型撮像素子 |
| US20100144084A1 (en) * | 2008-12-05 | 2010-06-10 | Doan Hung Q | Optical waveguide structures for an image sensor |
| JP4816768B2 (ja) * | 2009-06-22 | 2011-11-16 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
| JP4798232B2 (ja) | 2009-02-10 | 2011-10-19 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
| KR101776955B1 (ko) * | 2009-02-10 | 2017-09-08 | 소니 주식회사 | 고체 촬상 장치와 그 제조 방법, 및 전자 기기 |
| JP2010225818A (ja) * | 2009-03-23 | 2010-10-07 | Toshiba Corp | 固体撮像装置及びその製造方法 |
| JP5172819B2 (ja) * | 2009-12-28 | 2013-03-27 | 株式会社東芝 | 固体撮像装置 |
| JP5853351B2 (ja) * | 2010-03-25 | 2016-02-09 | ソニー株式会社 | 半導体装置、半導体装置の製造方法、及び電子機器 |
| JP2012023207A (ja) * | 2010-07-14 | 2012-02-02 | Toshiba Corp | 裏面照射型固体撮像装置 |
| JP2012028459A (ja) * | 2010-07-21 | 2012-02-09 | Sony Corp | 半導体装置、固体撮像装置、半導体装置の製造方法、固体撮像装置の製造方法、電子機器 |
| JP5682174B2 (ja) * | 2010-08-09 | 2015-03-11 | ソニー株式会社 | 固体撮像装置とその製造方法、並びに電子機器 |
| FR2969385A1 (fr) * | 2010-12-21 | 2012-06-22 | St Microelectronics Crolles 2 | Capteur d'images a taux d'intermodulation réduit |
| JP5810551B2 (ja) * | 2011-02-25 | 2015-11-11 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
| JP5606961B2 (ja) * | 2011-02-25 | 2014-10-15 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US8941204B2 (en) * | 2012-04-27 | 2015-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for reducing cross talk in image sensors |
-
2012
- 2012-08-03 JP JP2012173188A patent/JP6065448B2/ja active Active
-
2013
- 2013-07-22 TW TW102126156A patent/TWI637494B/zh active
- 2013-07-25 KR KR1020157002058A patent/KR102126095B1/ko active Active
- 2013-07-25 WO PCT/JP2013/004534 patent/WO2014020871A1/en not_active Ceased
- 2013-07-25 CN CN201380039862.9A patent/CN104508821B/zh active Active
- 2013-07-25 KR KR1020207017435A patent/KR102237324B1/ko active Active
- 2013-07-25 US US14/417,590 patent/US9748296B2/en active Active
-
2017
- 2017-07-21 US US15/656,873 patent/US10229947B2/en active Active
-
2019
- 2019-02-01 US US16/265,634 patent/US10748949B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2014033107A5 (enExample) | ||
| JP2012209542A5 (enExample) | ||
| US11069727B2 (en) | Imaging element having transfer gate structure comprising a trench | |
| KR102297001B1 (ko) | 고체 촬상 장치 및 그 제조 방법, 및 전자 기기 | |
| CN105023929B (zh) | 固态成像装置 | |
| TWI456746B (zh) | 固態成像器件,其製造方法,電子裝置以及半導體器件 | |
| US9111993B1 (en) | Conductive trench isolation | |
| JP2014022415A5 (enExample) | ||
| US20150221692A1 (en) | Solid-state imaging device, method for producing solid-state imaging device and electronic apparatus | |
| JP2013182941A5 (enExample) | ||
| JP2011185634A5 (enExample) | ||
| JP2008118142A5 (enExample) | ||
| JPWO2016002576A1 (ja) | 固体撮像素子、および電子装置 | |
| JP2010067827A5 (enExample) | ||
| JP2012002700A5 (enExample) | ||
| JP2013002887A5 (ja) | 放射線検出パネル、放射線撮影装置および放射線検出装置の製造方法 | |
| JP2012164945A5 (enExample) | ||
| JP2012164944A5 (enExample) | ||
| JP2016033979A5 (enExample) | ||
| JP2017005145A5 (enExample) | ||
| JP2011198855A5 (enExample) | ||
| JP2016018859A (ja) | 固体撮像装置及びその製造方法 | |
| JP2006279048A5 (enExample) | ||
| JP6108698B2 (ja) | 固体撮像装置の製造方法 | |
| JP2013137993A5 (enExample) |