JP6065448B2 - 固体撮像装置、固体撮像装置の製造方法及び電子機器 - Google Patents

固体撮像装置、固体撮像装置の製造方法及び電子機器 Download PDF

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JP6065448B2
JP6065448B2 JP2012173188A JP2012173188A JP6065448B2 JP 6065448 B2 JP6065448 B2 JP 6065448B2 JP 2012173188 A JP2012173188 A JP 2012173188A JP 2012173188 A JP2012173188 A JP 2012173188A JP 6065448 B2 JP6065448 B2 JP 6065448B2
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film
imaging device
groove
state imaging
solid
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JP2014033107A (ja
JP2014033107A5 (enExample
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貴幸 榎本
貴幸 榎本
芳樹 蛯子
芳樹 蛯子
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Sony Corp
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Sony Corp
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Priority to JP2012173188A priority Critical patent/JP6065448B2/ja
Priority to TW102126156A priority patent/TWI637494B/zh
Priority to PCT/JP2013/004534 priority patent/WO2014020871A1/en
Priority to KR1020207017435A priority patent/KR102237324B1/ko
Priority to US14/417,590 priority patent/US9748296B2/en
Priority to CN201380039862.9A priority patent/CN104508821B/zh
Priority to KR1020157002058A priority patent/KR102126095B1/ko
Publication of JP2014033107A publication Critical patent/JP2014033107A/ja
Publication of JP2014033107A5 publication Critical patent/JP2014033107A5/ja
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Priority to US15/656,873 priority patent/US10229947B2/en
Priority to US16/265,634 priority patent/US10748949B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2012173188A 2012-08-03 2012-08-03 固体撮像装置、固体撮像装置の製造方法及び電子機器 Active JP6065448B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2012173188A JP6065448B2 (ja) 2012-08-03 2012-08-03 固体撮像装置、固体撮像装置の製造方法及び電子機器
TW102126156A TWI637494B (zh) 2012-08-03 2013-07-22 固態成像器件，用於製造固態成像器件之方法以及電子裝置
KR1020207017435A KR102237324B1 (ko) 2012-08-03 2013-07-25 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기
US14/417,590 US9748296B2 (en) 2012-08-03 2013-07-25 Solid-state imaging device, method for producing solid-state imaging device and electronic apparatus
CN201380039862.9A CN104508821B (zh) 2012-08-03 2013-07-25 固态成像装置、制造固态成像装置的方法和电子设备
KR1020157002058A KR102126095B1 (ko) 2012-08-03 2013-07-25 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기
PCT/JP2013/004534 WO2014020871A1 (en) 2012-08-03 2013-07-25 Solid-state imaging device, method for producing solid-state imaging device and electronic apparatus
US15/656,873 US10229947B2 (en) 2012-08-03 2017-07-21 Solid-state imaging device, method for producing solid-state imaging device and electronic apparatus
US16/265,634 US10748949B2 (en) 2012-08-03 2019-02-01 Solid-state imaging device, method for producing solid-state imaging device and electronic apparatus

Applications Claiming Priority (1)

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JP2012173188A JP6065448B2 (ja) 2012-08-03 2012-08-03 固体撮像装置、固体撮像装置の製造方法及び電子機器

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JP2014033107A JP2014033107A (ja) 2014-02-20
JP2014033107A5 JP2014033107A5 (enExample) 2015-04-09
JP6065448B2 true JP6065448B2 (ja) 2017-01-25

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US (3) US9748296B2 (enExample)
JP (1) JP6065448B2 (enExample)
KR (2) KR102126095B1 (enExample)
CN (1) CN104508821B (enExample)
TW (1) TWI637494B (enExample)
WO (1) WO2014020871A1 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6303803B2 (ja) * 2013-07-03 2018-04-04 ソニー株式会社 固体撮像装置およびその製造方法
JP6166640B2 (ja) * 2013-10-22 2017-07-19 キヤノン株式会社 固体撮像装置、その製造方法及びカメラ
JP2015106621A (ja) * 2013-11-29 2015-06-08 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
JP2015216186A (ja) 2014-05-09 2015-12-03 ソニー株式会社 固体撮像装置および電子機器
JP2016100347A (ja) 2014-11-18 2016-05-30 ソニー株式会社 固体撮像装置及びその製造方法、並びに電子機器
JP6566734B2 (ja) * 2015-06-11 2019-08-28 キヤノン株式会社 固体撮像素子
KR20170019542A (ko) * 2015-08-11 2017-02-22 삼성전자주식회사 자동 초점 이미지 센서
KR102623653B1 (ko) * 2015-09-30 2024-01-10 가부시키가이샤 니콘 촬상 소자 및 촬상 장치
JP2017168566A (ja) * 2016-03-15 2017-09-21 ソニー株式会社 固体撮像素子、および電子機器
KR102582122B1 (ko) 2016-07-11 2023-09-21 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치
JP6768394B2 (ja) * 2016-07-29 2020-10-14 株式会社ジャパンディスプレイ 電子機器
KR102589016B1 (ko) 2016-08-25 2023-10-16 삼성전자주식회사 반도체 소자
KR102604687B1 (ko) * 2017-02-01 2023-11-20 삼성전자주식회사 이미지 센서 및 그 제조 방법
US10211244B2 (en) * 2017-06-30 2019-02-19 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device with reflective structure and method for forming the same
US10943942B2 (en) * 2017-11-10 2021-03-09 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device and method of forming the same
US11075242B2 (en) 2017-11-27 2021-07-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices for image sensing
JP2020027884A (ja) 2018-08-13 2020-02-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JP7366531B2 (ja) 2018-10-29 2023-10-23 キヤノン株式会社 光電変換装置および機器
KR102677769B1 (ko) * 2018-12-20 2024-06-24 삼성전자주식회사 후면조사형 이미지 센서 및 이를 포함하는 전자 기기
TWI867078B (zh) * 2019-11-19 2024-12-21 日商索尼半導體解決方案公司 固態攝像裝置及電子機器
US11244979B2 (en) * 2019-12-19 2022-02-08 Omnivision Technologies, Inc. Deep trench isolation (DTI) structure for CMOS image sensor
US11329086B2 (en) * 2019-12-27 2022-05-10 Omnivision Technologies, Inc. Method and structure to improve image sensor crosstalk
JP7441086B2 (ja) * 2020-03-23 2024-02-29 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
DE112021002438T5 (de) * 2020-04-20 2023-03-02 Sony Semiconductor Solutions Corporation Festkörperbildgebungselement und elektronische vorrichtung
KR102786345B1 (ko) 2020-04-24 2025-03-24 삼성전자주식회사 이미지 센서 및 그 제조 방법
US11664403B2 (en) * 2020-06-12 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Manufacturing method of image sensor device having metal grid partially embedded in buffer layer
US20220384252A1 (en) * 2021-05-26 2022-12-01 Texas Instruments Incorporated Through trench isolation for die
TWI796083B (zh) * 2022-01-11 2023-03-11 力晶積成電子製造股份有限公司 影像感測器及其製造方法
US12408448B2 (en) * 2022-06-13 2025-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Deep trench isolation structure and methods for fabrication thereof
CN114784033B (zh) * 2022-06-20 2022-09-16 西安中科立德红外科技有限公司 基于半导体工艺的混合成像芯片及其制备方法
JP2024163563A (ja) * 2023-05-12 2024-11-22 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
WO2025142145A1 (ja) * 2023-12-25 2025-07-03 ソニーセミコンダクタソリューションズ株式会社 光検出装置、光検出装置の製造方法及び電子機器
CN119601531B (zh) * 2024-08-30 2025-11-21 华虹半导体(无锡)有限公司 半导体器件及其形成方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6118142A (en) * 1998-11-09 2000-09-12 United Microelectronics Corp. CMOS sensor
EP1420702B1 (en) 2001-08-31 2005-04-20 Boston Scientific Limited Percutaneous pringle occlusion device
JP2005294647A (ja) * 2004-04-01 2005-10-20 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP2005294759A (ja) * 2004-04-05 2005-10-20 Renesas Technology Corp 半導体装置およびその製造方法
KR100678269B1 (ko) * 2004-10-18 2007-02-02 삼성전자주식회사 씨모스 방식의 이미지 센서와 그 제작 방법
JP2006344644A (ja) * 2005-06-07 2006-12-21 Matsushita Electric Ind Co Ltd 固体撮像装置およびカメラならびに固体撮像装置の製造方法
JP4992446B2 (ja) * 2006-02-24 2012-08-08 ソニー株式会社 固体撮像装置及びその製造方法、並びにカメラ
KR100764061B1 (ko) * 2006-12-04 2007-10-08 삼성전자주식회사 이미지 센서 및 그 형성 방법
JP5055026B2 (ja) * 2007-05-31 2012-10-24 富士フイルム株式会社 撮像素子、撮像素子の製造方法、及び、撮像素子用の半導体基板
JP4621719B2 (ja) 2007-09-27 2011-01-26 富士フイルム株式会社 裏面照射型撮像素子
US20100144084A1 (en) * 2008-12-05 2010-06-10 Doan Hung Q Optical waveguide structures for an image sensor
JP4816768B2 (ja) * 2009-06-22 2011-11-16 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP4798232B2 (ja) 2009-02-10 2011-10-19 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
KR101776955B1 (ko) * 2009-02-10 2017-09-08 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자 기기
JP2010225818A (ja) * 2009-03-23 2010-10-07 Toshiba Corp 固体撮像装置及びその製造方法
JP5172819B2 (ja) * 2009-12-28 2013-03-27 株式会社東芝 固体撮像装置
JP5853351B2 (ja) * 2010-03-25 2016-02-09 ソニー株式会社 半導体装置、半導体装置の製造方法、及び電子機器
JP2012023207A (ja) * 2010-07-14 2012-02-02 Toshiba Corp 裏面照射型固体撮像装置
JP2012028459A (ja) * 2010-07-21 2012-02-09 Sony Corp 半導体装置、固体撮像装置、半導体装置の製造方法、固体撮像装置の製造方法、電子機器
JP5682174B2 (ja) * 2010-08-09 2015-03-11 ソニー株式会社 固体撮像装置とその製造方法、並びに電子機器
FR2969385A1 (fr) * 2010-12-21 2012-06-22 St Microelectronics Crolles 2 Capteur d'images a taux d'intermodulation réduit
JP5810551B2 (ja) * 2011-02-25 2015-11-11 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP5606961B2 (ja) * 2011-02-25 2014-10-15 ルネサスエレクトロニクス株式会社 半導体装置
US8941204B2 (en) * 2012-04-27 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for reducing cross talk in image sensors

Also Published As

Publication number Publication date
CN104508821A (zh) 2015-04-08
WO2014020871A1 (en) 2014-02-06
US20190165023A1 (en) 2019-05-30
CN104508821B (zh) 2018-11-09
KR20150037897A (ko) 2015-04-08
KR102126095B1 (ko) 2020-06-23
US20150221692A1 (en) 2015-08-06
US10748949B2 (en) 2020-08-18
JP2014033107A (ja) 2014-02-20
TWI637494B (zh) 2018-10-01
KR102237324B1 (ko) 2021-04-07
US9748296B2 (en) 2017-08-29
US10229947B2 (en) 2019-03-12
KR20200074274A (ko) 2020-06-24
US20170323918A1 (en) 2017-11-09
TW201407756A (zh) 2014-02-16

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