TWI637494B - 固態成像器件，用於製造固態成像器件之方法以及電子裝置 - Google Patents
固態成像器件，用於製造固態成像器件之方法以及電子裝置 Download PDFInfo
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- TWI637494B TWI637494B TW102126156A TW102126156A TWI637494B TW I637494 B TWI637494 B TW I637494B TW 102126156 A TW102126156 A TW 102126156A TW 102126156 A TW102126156 A TW 102126156A TW I637494 B TWI637494 B TW I637494B
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8027—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012173188A JP6065448B2 (ja) | 2012-08-03 | 2012-08-03 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
| JP2012-173188 | 2012-08-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201407756A TW201407756A (zh) | 2014-02-16 |
| TWI637494B true TWI637494B (zh) | 2018-10-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102126156A TWI637494B (zh) | 2012-08-03 | 2013-07-22 | 固態成像器件，用於製造固態成像器件之方法以及電子裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US9748296B2 (enExample) |
| JP (1) | JP6065448B2 (enExample) |
| KR (2) | KR102126095B1 (enExample) |
| CN (1) | CN104508821B (enExample) |
| TW (1) | TWI637494B (enExample) |
| WO (1) | WO2014020871A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI867078B (zh) * | 2019-11-19 | 2024-12-21 | 日商索尼半導體解決方案公司 | 固態攝像裝置及電子機器 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6303803B2 (ja) * | 2013-07-03 | 2018-04-04 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
| JP6166640B2 (ja) * | 2013-10-22 | 2017-07-19 | キヤノン株式会社 | 固体撮像装置、その製造方法及びカメラ |
| JP2015106621A (ja) * | 2013-11-29 | 2015-06-08 | ソニー株式会社 | 固体撮像素子および製造方法、並びに電子機器 |
| JP2015216186A (ja) | 2014-05-09 | 2015-12-03 | ソニー株式会社 | 固体撮像装置および電子機器 |
| JP2016100347A (ja) | 2014-11-18 | 2016-05-30 | ソニー株式会社 | 固体撮像装置及びその製造方法、並びに電子機器 |
| JP6566734B2 (ja) * | 2015-06-11 | 2019-08-28 | キヤノン株式会社 | 固体撮像素子 |
| KR20170019542A (ko) * | 2015-08-11 | 2017-02-22 | 삼성전자주식회사 | 자동 초점 이미지 센서 |
| KR102623653B1 (ko) * | 2015-09-30 | 2024-01-10 | 가부시키가이샤 니콘 | 촬상 소자 및 촬상 장치 |
| JP2017168566A (ja) * | 2016-03-15 | 2017-09-21 | ソニー株式会社 | 固体撮像素子、および電子機器 |
| KR102582122B1 (ko) | 2016-07-11 | 2023-09-21 | 삼성전자주식회사 | 이미지 센서 및 이를 포함하는 전자 장치 |
| JP6768394B2 (ja) * | 2016-07-29 | 2020-10-14 | 株式会社ジャパンディスプレイ | 電子機器 |
| KR102589016B1 (ko) | 2016-08-25 | 2023-10-16 | 삼성전자주식회사 | 반도체 소자 |
| KR102604687B1 (ko) * | 2017-02-01 | 2023-11-20 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
| US10211244B2 (en) * | 2017-06-30 | 2019-02-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device with reflective structure and method for forming the same |
| US10943942B2 (en) * | 2017-11-10 | 2021-03-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device and method of forming the same |
| US11075242B2 (en) | 2017-11-27 | 2021-07-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices for image sensing |
| JP2020027884A (ja) | 2018-08-13 | 2020-02-20 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及び電子機器 |
| JP7366531B2 (ja) | 2018-10-29 | 2023-10-23 | キヤノン株式会社 | 光電変換装置および機器 |
| KR102677769B1 (ko) * | 2018-12-20 | 2024-06-24 | 삼성전자주식회사 | 후면조사형 이미지 센서 및 이를 포함하는 전자 기기 |
| US11244979B2 (en) * | 2019-12-19 | 2022-02-08 | Omnivision Technologies, Inc. | Deep trench isolation (DTI) structure for CMOS image sensor |
| US11329086B2 (en) * | 2019-12-27 | 2022-05-10 | Omnivision Technologies, Inc. | Method and structure to improve image sensor crosstalk |
| JP7441086B2 (ja) * | 2020-03-23 | 2024-02-29 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
| DE112021002438T5 (de) * | 2020-04-20 | 2023-03-02 | Sony Semiconductor Solutions Corporation | Festkörperbildgebungselement und elektronische vorrichtung |
| KR102786345B1 (ko) | 2020-04-24 | 2025-03-24 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
| US11664403B2 (en) * | 2020-06-12 | 2023-05-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Manufacturing method of image sensor device having metal grid partially embedded in buffer layer |
| US20220384252A1 (en) * | 2021-05-26 | 2022-12-01 | Texas Instruments Incorporated | Through trench isolation for die |
| TWI796083B (zh) * | 2022-01-11 | 2023-03-11 | 力晶積成電子製造股份有限公司 | 影像感測器及其製造方法 |
| US12408448B2 (en) * | 2022-06-13 | 2025-09-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deep trench isolation structure and methods for fabrication thereof |
| CN114784033B (zh) * | 2022-06-20 | 2022-09-16 | 西安中科立德红外科技有限公司 | 基于半导体工艺的混合成像芯片及其制备方法 |
| JP2024163563A (ja) * | 2023-05-12 | 2024-11-22 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
| WO2025142145A1 (ja) * | 2023-12-25 | 2025-07-03 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置、光検出装置の製造方法及び電子機器 |
| CN119601531B (zh) * | 2024-08-30 | 2025-11-21 | 华虹半导体(无锡)有限公司 | 半导体器件及其形成方法 |
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| US20080128845A1 (en) * | 2006-12-04 | 2008-06-05 | Samsung Electronics Co., Ltd. | Image sensor and method of forming the same |
| US20120033119A1 (en) * | 2010-08-09 | 2012-02-09 | Sony Corporation | Solid-state imaging device, manufacturing method thereof, and electronic apparatus |
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| US6118142A (en) * | 1998-11-09 | 2000-09-12 | United Microelectronics Corp. | CMOS sensor |
| EP1420702B1 (en) | 2001-08-31 | 2005-04-20 | Boston Scientific Limited | Percutaneous pringle occlusion device |
| JP2005294647A (ja) * | 2004-04-01 | 2005-10-20 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
| JP2005294759A (ja) * | 2004-04-05 | 2005-10-20 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| KR100678269B1 (ko) * | 2004-10-18 | 2007-02-02 | 삼성전자주식회사 | 씨모스 방식의 이미지 센서와 그 제작 방법 |
| JP2006344644A (ja) * | 2005-06-07 | 2006-12-21 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびカメラならびに固体撮像装置の製造方法 |
| JP4992446B2 (ja) * | 2006-02-24 | 2012-08-08 | ソニー株式会社 | 固体撮像装置及びその製造方法、並びにカメラ |
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Also Published As
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|---|---|
| CN104508821A (zh) | 2015-04-08 |
| JP6065448B2 (ja) | 2017-01-25 |
| WO2014020871A1 (en) | 2014-02-06 |
| US20190165023A1 (en) | 2019-05-30 |
| CN104508821B (zh) | 2018-11-09 |
| KR20150037897A (ko) | 2015-04-08 |
| KR102126095B1 (ko) | 2020-06-23 |
| US20150221692A1 (en) | 2015-08-06 |
| US10748949B2 (en) | 2020-08-18 |
| JP2014033107A (ja) | 2014-02-20 |
| KR102237324B1 (ko) | 2021-04-07 |
| US9748296B2 (en) | 2017-08-29 |
| US10229947B2 (en) | 2019-03-12 |
| KR20200074274A (ko) | 2020-06-24 |
| US20170323918A1 (en) | 2017-11-09 |
| TW201407756A (zh) | 2014-02-16 |
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