CN104508821B - 固态成像装置、制造固态成像装置的方法和电子设备 - Google Patents

固态成像装置、制造固态成像装置的方法和电子设备 Download PDF

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CN104508821B
CN104508821B CN201380039862.9A CN201380039862A CN104508821B CN 104508821 B CN104508821 B CN 104508821B CN 201380039862 A CN201380039862 A CN 201380039862A CN 104508821 B CN104508821 B CN 104508821B
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light
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CN104508821A (zh
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榎本贵幸
蛯子芳树
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201380039862.9A 2012-08-03 2013-07-25 固态成像装置、制造固态成像装置的方法和电子设备 Active CN104508821B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012173188A JP6065448B2 (ja) 2012-08-03 2012-08-03 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP2012-173188 2012-08-03
PCT/JP2013/004534 WO2014020871A1 (en) 2012-08-03 2013-07-25 Solid-state imaging device, method for producing solid-state imaging device and electronic apparatus

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CN104508821A CN104508821A (zh) 2015-04-08
CN104508821B true CN104508821B (zh) 2018-11-09

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US (3) US9748296B2 (enExample)
JP (1) JP6065448B2 (enExample)
KR (2) KR102126095B1 (enExample)
CN (1) CN104508821B (enExample)
TW (1) TWI637494B (enExample)
WO (1) WO2014020871A1 (enExample)

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KR102677769B1 (ko) * 2018-12-20 2024-06-24 삼성전자주식회사 후면조사형 이미지 센서 및 이를 포함하는 전자 기기
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US11664403B2 (en) * 2020-06-12 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Manufacturing method of image sensor device having metal grid partially embedded in buffer layer
US20220384252A1 (en) * 2021-05-26 2022-12-01 Texas Instruments Incorporated Through trench isolation for die
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Also Published As

Publication number Publication date
CN104508821A (zh) 2015-04-08
JP6065448B2 (ja) 2017-01-25
WO2014020871A1 (en) 2014-02-06
US20190165023A1 (en) 2019-05-30
KR20150037897A (ko) 2015-04-08
KR102126095B1 (ko) 2020-06-23
US20150221692A1 (en) 2015-08-06
US10748949B2 (en) 2020-08-18
JP2014033107A (ja) 2014-02-20
TWI637494B (zh) 2018-10-01
KR102237324B1 (ko) 2021-04-07
US9748296B2 (en) 2017-08-29
US10229947B2 (en) 2019-03-12
KR20200074274A (ko) 2020-06-24
US20170323918A1 (en) 2017-11-09
TW201407756A (zh) 2014-02-16

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