JP2013538675A - 液相化学堆積装置及びプロセス並びにその製品 - Google Patents
液相化学堆積装置及びプロセス並びにその製品 Download PDFInfo
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- JP2013538675A JP2013538675A JP2013521873A JP2013521873A JP2013538675A JP 2013538675 A JP2013538675 A JP 2013538675A JP 2013521873 A JP2013521873 A JP 2013521873A JP 2013521873 A JP2013521873 A JP 2013521873A JP 2013538675 A JP2013538675 A JP 2013538675A
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Images
Classifications
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- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
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Abstract
Description
液相金属有機物前駆体好ましくはカルボン酸前駆体のエアロゾルスプレーを、適切に構成された堆積チャンバ内で低温(200℃〜600℃好ましくは250℃〜400℃)に加熱された恒久的な又は離脱可能な基板上に適用することによりアモルファス堆積物を形成すること、
ベークアウトステップを使用して残余有機物質を除去することであって、別々のチャンバであっても又は別々のチャンバでなくてもよく、400℃から650℃、好ましくは400℃から450℃の間の範囲の温度にスプレーしたアモルファス堆積物を加熱すること、及び、
結晶又は多結晶構造にアモルファス堆積物を変形させることが必要なときの任意の高速熱アニールステップ、好ましくはプラズマアニールステップと、を含む。
スプレー堆積チャンバ700内の追加ハードウェアコンポーネントは、
(任意の)パターンマスク724であって、当該パターンマスク724を通して基板728の表面に選択的に配置された堆積物726を形成するように、物質がスプレーされる。
物質がその上にスプレーされる基板又はターゲット728である。
高度に正確な基板温度コントローラ730である。
基板が乗ったペデスタル720を通して、堆積プロセスの間、電磁場を表面上に生成するための手段731である。
スプレー飛沫及び他のプロセスからの無駄な物質/分解製品をその中に収集する冷却トラップシステム732である。
溶媒蒸気及び堆積チャンバからの他の軽い廃棄物を除去する、矢印734A及び734Bで表された排気システムである。
ガス混合マニホルド736であって、これはプロセスガスを90℃から180℃の範囲の温度に加熱して、スプレーチャンバ内の液滴から溶媒の分離を促進することにもまた使用される。
Claims (40)
- アモルファス物質を形成する方法であって、
溶液内の液相金属有機物前駆体を混合するステップ、
制御されたガス雰囲気を有する堆積チャンバ内で表面に向かって前記金属有機物前駆体の液体エアロゾルを投射するステップと、
前記金属有機物前駆体の分解温度よりも高い温度に前記表面を加熱するステップと、
アモルファス物質を形成するように前記加熱表面に接触した前記金属有機物前駆体を分解するステップと、を含むことを特徴とする方法。 - 前記表面に接触する前に放射エネルギーに前記投射エアロゾルを暴露するステップをさらに含むことを特徴とする請求項1に記載の方法。
- 前記投射エアロゾルを暴露するステップは、前記表面に近接配置された熱場内の温度勾配を形成することを特徴とする請求項2に記載の方法。
- 前記熱場の温度勾配は、前記エアロゾル内の全液体溶媒の蒸発温度を超えて前記投射液体エアロゾルの温度を上昇させることを特徴とする請求項3に記載の方法。
- 前記暴露ステップは、前記エアロゾル化した金属有機物前駆体から、液体溶媒を相分離及び蒸発させるように前記投射エアロゾルを加熱することをさらに含むことを特徴とする請求項2に記載の方法。
- 前記投射ステップは、前記堆積チャンバ内の制御されたガス雰囲気を決定するガス又はガス混合体を使用することを含むことを特徴とする請求項1に記載の方法。
- 前記ガス又はガス混合体が前加熱されることを特徴とする請求項6に記載の方法。
- 前記金属有機物前駆体は、カルボン酸塩、アルコキシド又はアルキル金属又はβ−ケトネート(β−ketonates)からなることを特徴とする請求項1に記載の方法。
- 前記加熱ステップにおいて前記表面が、250℃以上且つ形成されるアモルファス物質の任意の結晶化核形成温度以下の温度に加熱されることを特徴とする請求項1に記載の方法。
- 前記表面が、400℃未満の温度に加熱されることを特徴とする請求項9に記載の方法。
- 前記形成されたアモルファス物質の温度を≦450℃に上昇させる制御ガス雰囲気内の熱処理の適用によって、前記アモルファス物質から任意の残余有機物質を除去することをさらに含むことを特徴とする請求項10に記載の方法。
- 前記熱処理は紫外線光の同時適用で実行されることを特徴とする請求項11に記載の方法。
- 続く加熱ステップで、形成したアモルファス物質から結晶物質を形成することをさらに含むことを特徴とする請求項1に記載の方法。
- 前記続く加熱ステップは、高速熱アニールステップ又はプラズマアニールステップであることを特徴とする請求項13に記載の方法。
- 前記形成した結晶物質は、長さ100nmよりも小さい粒サイズを有することを特徴とする請求項13に記載の方法。
- 前記アモルファス物質が形成された前記表面を除去することをさらに含むことを特徴とする請求項15に記載の方法。
- 前記アモルファス物質は金属酸化物セラミックであり、且つ、前記制御ガス雰囲気は空気、酸素分圧を含む不活性ガス混合体、又は、化学的に酸化的な二酸化炭素及び一酸化炭素の分圧を含む不活性ガス混合体であることを特徴とする請求項1に記載の方法。
- 前記アモルファス物質は、金属合金、超合金、半金属又は半導体であり、且つ、前記制御ガス雰囲気はアルゴン、窒素又は水素、あるいは、化学的に還元的な二酸化炭素及び一酸化炭素の分圧を含む、不活性ガス混合体であることを特徴とする請求項1に記載の方法。
- 前記形成したアモルファス物質は、原子スケールで≦±1.5mol%で変化する元素組成を有していることを特徴とする請求項1に記載の方法。
- 前記形成したアモルファス物質は、アモルファスシリカ、インジウムスズ酸化物、ガリウムヒ素、テルル化カドミウム、シリコンゲルマニウム、ゲルマニウム又はセレン化銅インジウムガリウムであることを特徴とする請求項1に記載の方法。
- 前記液相金属有機物前駆体は、分子レベルで混合されて、さらに前記アモルファス物質は原子スケールで均一に細分化される化学的に正確な元素の混合体を有することを特徴とする請求項1に記載の方法。
- アモルファス物質を形成するための装置であって、
堆積チャンバと、
前記堆積チャンバ内に配置された基板に向かって金属有機物前駆体の液体エアロゾルを投射するためのスプレー装置と、
前記金属有機物前駆体の分解温度よりも高い温度に表面を加熱するように構成されたヒーターと、を備え、
前記ヒーターは、前記アモルファス物質を形成するように加熱されたとき、前記表面に接触して前記金属有機物前駆体の分解を引き起こすことに効果的であることを特徴とする装置。 - 金属有機物前駆体の前記投射した液体エアロゾルに曝露するために配置された放射ヒーターをさらに備えることを特徴とする請求項22に記載の装置。
- 前記放射ヒーターは、そこに曝露される前記金属有機物前駆体の温度を上昇させる温度勾配を形成することを特徴とする請求項23に記載の装置。
- 前記温度勾配は、前記液体エアロゾル中の全ての液体溶媒の蒸発温度を超えて前記投射した溶液の温度を上昇させるように構成されていることを特徴とする請求項24に記載の装置。
- 前記堆積チャンバ内に制御されたガス雰囲気をさらに備え、前記制御ガス雰囲気及び前記ヒーターは、前記アモルファス物質を形成するように前記表面に接触した前記金属有機物前駆体の分解を引き起こすことに効果的であることを特徴とする請求項22に記載の装置。
- 前記スプレー装置は、前記液体エアロゾルを投射することに使用するための、且つ、それによって前記制御ガス雰囲気を提供するためのガスソースを含むことを特徴とする請求項26に記載の装置。
- 前記液体エアロゾルを投射する前に前記ガスソースからのガスを前加熱するために結合された補助ヒーターをさらに備えることを特徴とする請求項27に記載の装置。
- 制御されたガス雰囲気を提供するとともに、400℃から600℃の温度で前記形成したアモルファス物質を熱処理することによって任意の残余有機物質を除去するように構成された第2ベークアウトステーションをさらに備えることを特徴とする請求項22に記載の装置。
- 前記第2ベークアウトステーションは、前記形成されたアモルファス物質からの前記有機物質の除去を加速することに使用される紫外線光源を含むことを特徴とする請求項29に記載の装置。
- 制御ガス環境を有するアニールステーション及び前記形成したアモルファス物質を結晶化することに効果的な加熱機構をさらに備えることを特徴とする請求項22に記載の装置。
- 前記加熱機構は、高速熱アニール機構であることを特徴とする請求項31に記載の装置。
- 前記高速熱アニール機構は、雰囲気制御イオンプラズマであることを特徴とする請求項32に記載の装置。
- 1又は複数の堆積チャンバ、1又は複数の第2ベークアウトステーション及び1又は複数のアニールステーションの間で、形成アモルファス物質を搬送するように構成されたロボット式ハンドリングシステムをさらに備えることを特徴とする請求項22に記載の装置。
- 前記ロボット式ハンドリングシステム、1又は複数の堆積チャンバ、1又は複数の第2ベークアウトステーション及び1又は複数のアニールステーションの組織的な操作のための全体制御システムをさらに備えることを特徴とする請求項34に記載の装置。
- 前記形成したアモルファス物質又は前記表面に配置された反応性元素を有害大気から保護するための局所的ガス環境を提供するように構成された装置をさらに備えることを特徴とする請求項34に記載の装置。
- 原子スケールで≦±1.5mol%で変化する元素組成を有する4以上の元素を含む物質。
- 前記元素はアモルファス又は結晶構造を原子レベルで有することを特徴とする請求項37に記載の物質。
- 前記元素は、結晶構造を有し、100nm以下の均一な粒サイズを有することを特徴とする請求項38に記載の物質。
- セレン化銅インジウムガリウムを含むことを特徴とする請求項38に記載の物質。
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US20110021007A1 (en) | 2011-01-27 |
EP2599113A4 (en) | 2017-04-05 |
US20130095306A1 (en) | 2013-04-18 |
EP2599113A2 (en) | 2013-06-05 |
WO2012018581A2 (en) | 2012-02-09 |
CN106435534A (zh) | 2017-02-22 |
CN103119700B (zh) | 2016-09-07 |
EP2599113B1 (en) | 2018-11-14 |
CN103119700A (zh) | 2013-05-22 |
US8715814B2 (en) | 2014-05-06 |
US8354294B2 (en) | 2013-01-15 |
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