JP2013536539A - クーラント流量の制御及びヒーターのデューティーサイクルの制御による部品温度制御 - Google Patents

クーラント流量の制御及びヒーターのデューティーサイクルの制御による部品温度制御 Download PDF

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Publication number
JP2013536539A
JP2013536539A JP2013512105A JP2013512105A JP2013536539A JP 2013536539 A JP2013536539 A JP 2013536539A JP 2013512105 A JP2013512105 A JP 2013512105A JP 2013512105 A JP2013512105 A JP 2013512105A JP 2013536539 A JP2013536539 A JP 2013536539A
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JP
Japan
Prior art keywords
temperature
plasma
control
coolant
input
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Pending
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JP2013512105A
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English (en)
Japanese (ja)
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JP2013536539A5 (enExample
Inventor
チェタン マハデスワラスワミー
カルティク ラマスワミー
ブライアン リャオ
セルジオ ショージ
デュイ ディー ヌグエン
ハミド ヌーバクシュ
デービッド パラガシュビリ
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Applied Materials Inc
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Applied Materials Inc
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Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2013536539A publication Critical patent/JP2013536539A/ja
Publication of JP2013536539A5 publication Critical patent/JP2013536539A5/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B15/00—Systems controlled by a computer
    • G05B15/02—Systems controlled by a computer electric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32908—Utilities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
JP2013512105A 2010-05-27 2011-05-20 クーラント流量の制御及びヒーターのデューティーサイクルの制御による部品温度制御 Pending JP2013536539A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US34907310P 2010-05-27 2010-05-27
US61/349,073 2010-05-27
US13/040,149 2011-03-03
US13/040,149 US8880227B2 (en) 2010-05-27 2011-03-03 Component temperature control by coolant flow control and heater duty cycle control
PCT/US2011/037436 WO2011149790A2 (en) 2010-05-27 2011-05-20 Component temperature control by coolant flow control and heater duty cycle control

Publications (2)

Publication Number Publication Date
JP2013536539A true JP2013536539A (ja) 2013-09-19
JP2013536539A5 JP2013536539A5 (enExample) 2014-07-24

Family

ID=45004685

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013512105A Pending JP2013536539A (ja) 2010-05-27 2011-05-20 クーラント流量の制御及びヒーターのデューティーサイクルの制御による部品温度制御

Country Status (6)

Country Link
US (2) US8880227B2 (enExample)
JP (1) JP2013536539A (enExample)
KR (1) KR101476727B1 (enExample)
CN (2) CN106842966B (enExample)
TW (3) TWI564930B (enExample)
WO (1) WO2011149790A2 (enExample)

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JP2018509874A (ja) * 2014-11-26 2018-04-05 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｒｆ環境内の装置のための制御アーキテクチャ
JP2021005716A (ja) * 2016-05-05 2021-01-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマ処理チャンバ内のウエハキャリアのための高度な温度制御
JP2023525052A (ja) * 2020-05-08 2023-06-14 アプライド マテリアルズ インコーポレイテッド 基板を処理するための方法及び装置
US11870252B2 (en) 2014-11-26 2024-01-09 Applied Materials, Inc. Consolidated filter arrangement for devices in an RF environment

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US9338871B2 (en) * 2010-01-29 2016-05-10 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
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JP7392118B2 (ja) * 2019-09-06 2023-12-05 キンタス・テクノロジーズ・エービー 熱間圧接装置内で冷却速度を制御する方法、制御モジュール、および圧接装置それ自体
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US9639097B2 (en) 2017-05-02
US20120048467A1 (en) 2012-03-01
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US8880227B2 (en) 2014-11-04
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US20150134128A1 (en) 2015-05-14
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