KR101476727B1 - 냉각제 유동 제어 및 히터 듀티 사이클 제어에 의한 부품 온도 제어 - Google Patents

냉각제 유동 제어 및 히터 듀티 사이클 제어에 의한 부품 온도 제어 Download PDF

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KR101476727B1
KR101476727B1 KR1020127032509A KR20127032509A KR101476727B1 KR 101476727 B1 KR101476727 B1 KR 101476727B1 KR 1020127032509 A KR1020127032509 A KR 1020127032509A KR 20127032509 A KR20127032509 A KR 20127032509A KR 101476727 B1 KR101476727 B1 KR 101476727B1
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temperature
plasma
control
coolant liquid
coolant
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KR20130020802A (ko
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체탄 마하데스와라스와미
카르틱 라마스와미
브라이언 리아오
세르지오 쇼지
두이 디. 응우옌
하미드 노르바크쉬
데이비드 팔라가쉬빌리
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어플라이드 머티어리얼스, 인코포레이티드
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B15/00—Systems controlled by a computer
    • G05B15/02—Systems controlled by a computer electric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32908—Utilities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
KR1020127032509A 2010-05-27 2011-05-20 냉각제 유동 제어 및 히터 듀티 사이클 제어에 의한 부품 온도 제어 Active KR101476727B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US34907310P 2010-05-27 2010-05-27
US61/349,073 2010-05-27
US13/040,149 2011-03-03
US13/040,149 US8880227B2 (en) 2010-05-27 2011-03-03 Component temperature control by coolant flow control and heater duty cycle control
PCT/US2011/037436 WO2011149790A2 (en) 2010-05-27 2011-05-20 Component temperature control by coolant flow control and heater duty cycle control

Publications (2)

Publication Number Publication Date
KR20130020802A KR20130020802A (ko) 2013-02-28
KR101476727B1 true KR101476727B1 (ko) 2014-12-26

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Country Status (6)

Country Link
US (2) US8880227B2 (enExample)
JP (1) JP2013536539A (enExample)
KR (1) KR101476727B1 (enExample)
CN (2) CN106842966B (enExample)
TW (3) TWI615883B (enExample)
WO (1) WO2011149790A2 (enExample)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5465954B2 (ja) * 2008-09-29 2014-04-09 株式会社日立国際電気 基板処理装置及び判断プログラムを格納する記憶媒体及び基板処理装置の表示方法
US9338871B2 (en) 2010-01-29 2016-05-10 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
US8916793B2 (en) 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US8880227B2 (en) 2010-05-27 2014-11-04 Applied Materials, Inc. Component temperature control by coolant flow control and heater duty cycle control
US8580693B2 (en) * 2010-08-27 2013-11-12 Applied Materials, Inc. Temperature enhanced electrostatic chucking in plasma processing apparatus
JP5732941B2 (ja) * 2011-03-16 2015-06-10 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法
JP5712741B2 (ja) * 2011-03-31 2015-05-07 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
US9165804B2 (en) 2011-04-29 2015-10-20 Applied Materials, Inc. Methods of cooling process chamber components
US10274270B2 (en) 2011-10-27 2019-04-30 Applied Materials, Inc. Dual zone common catch heat exchanger/chiller
US9436497B2 (en) * 2012-09-10 2016-09-06 Apple Inc. Linking multiple independent control systems to distribute response
US20140069130A1 (en) * 2012-09-10 2014-03-13 Semicat, Inc. Temperature control of semiconductor processing chambers
JP5998010B2 (ja) 2012-10-24 2016-09-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理システム、基板処理装置の制御方法、プログラムおよび記録媒体
JP6070145B2 (ja) * 2012-12-13 2017-02-01 オムロン株式会社 調節器、操作量出力方法、プログラムおよび記憶媒体
JP6159172B2 (ja) * 2013-06-26 2017-07-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置
JP6230437B2 (ja) * 2014-02-04 2017-11-15 東京エレクトロン株式会社 温度測定方法及びプラズマ処理システム
JP6158111B2 (ja) * 2014-02-12 2017-07-05 東京エレクトロン株式会社 ガス供給方法及び半導体製造装置
JP6123741B2 (ja) * 2014-06-20 2017-05-10 トヨタ自動車株式会社 冷却器
US9823636B2 (en) * 2014-07-29 2017-11-21 Dell Products L.P. Systems and methods for parallel feedback temperature control
CN104155749A (zh) * 2014-09-04 2014-11-19 中国科学院光电技术研究所 一种可用于大口径地基太阳望远镜的热视场光阑温控装置
US20160149733A1 (en) * 2014-11-26 2016-05-26 Applied Materials, Inc. Control architecture for devices in an rf environment
US9872341B2 (en) 2014-11-26 2018-01-16 Applied Materials, Inc. Consolidated filter arrangement for devices in an RF environment
US11513042B2 (en) * 2015-01-26 2022-11-29 SPEX SamplePrep, LLC Power-compensated fusion furnace
US10240870B2 (en) 2015-01-26 2019-03-26 Spex Sample Prep, Llc Method for operating a power-compensated fusion furnace
US10780447B2 (en) * 2016-04-26 2020-09-22 Applied Materials, Inc. Apparatus for controlling temperature uniformity of a showerhead
US11837479B2 (en) 2016-05-05 2023-12-05 Applied Materials, Inc. Advanced temperature control for wafer carrier in plasma processing chamber
US20180053666A1 (en) 2016-08-19 2018-02-22 Applied Materials, Inc. Substrate carrier with array of independently controllable heater elements
US10725485B2 (en) * 2016-12-15 2020-07-28 Lam Research Corporation System and method for calculating substrate support temperature
DE102018204585A1 (de) * 2017-03-31 2018-10-04 centrotherm international AG Plasmagenerator, Plasma-Behandlungsvorrichtung und Verfahren zum gepulsten Bereitstellen von elektrischer Leistung
US10867812B2 (en) * 2017-08-30 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor manufacturing system and control method
US10415899B2 (en) * 2017-12-28 2019-09-17 Asm Ip Holding B.V. Cooling system, substrate processing system and flow rate adjusting method for cooling medium
US10816244B2 (en) 2018-03-01 2020-10-27 Laird Thermal Systems, Inc. Compressor chiller systems including thermoelectric modules, and corresponding control methods
CN118360588A (zh) 2018-07-05 2024-07-19 朗姆研究公司 衬底处理系统中的衬底支撑件的动态温度控制
US11183400B2 (en) 2018-08-08 2021-11-23 Lam Research Corporation Progressive heating of components of substrate processing systems using TCR element-based heaters
US10971384B2 (en) * 2018-09-13 2021-04-06 Lam Research Corporation Auto-calibrated process independent feedforward control for processing substrates
WO2020068546A2 (en) * 2018-09-24 2020-04-02 Lam Research Corporation Multiplexed high tcr based ampoule heaters
TW202531282A (zh) * 2018-11-30 2025-08-01 日商東京威力科創股份有限公司 電漿處理裝置
US20220019274A1 (en) * 2018-12-14 2022-01-20 Hewlett-Packard Development Company, L.P. Power control based on cumulative error
US11533783B2 (en) * 2019-07-18 2022-12-20 Applied Materials, Inc. Multi-zone heater model-based control in semiconductor manufacturing
CN110440602A (zh) * 2019-08-13 2019-11-12 德淮半导体有限公司 一种冷却水自动调节系统
WO2021043422A1 (en) * 2019-09-06 2021-03-11 Quintus Technologies Ab A method of controlling the cooling rate in a hot pressing arrangement, a control module and a pressing arrangement per se
CA3060479C (en) * 2019-09-20 2022-11-15 Payam Tavakoli System and method for controlling water heater output temperature
CN112951694B (zh) * 2019-11-26 2024-05-10 中微半导体设备(上海)股份有限公司 等离子体处理装置及其半导体晶圆的处理方法
CN112859498B (zh) 2019-11-28 2022-07-12 中强光电股份有限公司 照明装置、投影系统及其操作方法
KR20210126387A (ko) * 2020-04-10 2021-10-20 주성엔지니어링(주) 기판 처리 장치 및 방법
US12278094B2 (en) * 2020-05-08 2025-04-15 Applied Materials, Inc. Methods and apparatus for processing a substrate
US12191169B2 (en) 2020-07-19 2025-01-07 Applied Materials, Inc. Systems and methods for faceplate temperature control
WO2022040164A1 (en) * 2020-08-18 2022-02-24 Mattson Technology, Inc. Rapid thermal processing system with cooling system
JP7528659B2 (ja) * 2020-09-10 2024-08-06 東京エレクトロン株式会社 基板を加熱する装置及び方法
US12326282B2 (en) * 2023-01-05 2025-06-10 Applied Materials, Inc. Cooling flow in substrate processing according to predicted cooling parameters
WO2025230886A1 (en) * 2024-05-01 2025-11-06 Lam Research Corporation Temperature control of substrate processing chamber plates using pwm to analog converters and proportional valves
US20250349575A1 (en) * 2024-05-09 2025-11-13 Applied Materials, Inc. Semiconductor processing chamber thermal control
CN118655933B (zh) * 2024-08-20 2024-11-05 中国计量大学 提高量热仪等温控制收敛速度的方法、系统、设备及介质
CN118963456B (zh) * 2024-10-17 2025-01-24 青岛四方思锐智能技术有限公司 一种反应腔室温度的控制系统、方法及电子设备
CN120523262B (zh) * 2025-07-28 2025-10-31 上海芯源微企业发展有限公司 机台加热系统的控温方法、装置、可读介质及电子设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079415A (ja) * 2003-09-02 2005-03-24 Hitachi High-Technologies Corp プラズマ処理装置
US20070091537A1 (en) * 2005-10-20 2007-04-26 Applied Materials, Inc. Method for agile workpiece temperature control in a plasma reactor using a thermal model
US20090310645A1 (en) * 2008-06-16 2009-12-17 Hitachi-High Technologies Corporation Sample temperature control method

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0796170B2 (ja) * 1990-01-12 1995-10-18 日産車体株式会社 ロボットセット治具
JP3147392B2 (ja) 1991-03-04 2001-03-19 宇部サイコン株式会社 熱可塑性樹脂組成物
JPH0796170A (ja) * 1993-09-09 1995-04-11 Tokyo Electron Ltd 熱処理装置の温度制御方法
US5435145A (en) 1994-03-03 1995-07-25 General Electric Company Refrigerant flow rate control based on liquid level in simple vapor compression refrigeration cycles
US5548470A (en) 1994-07-19 1996-08-20 International Business Machines Corporation Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
US5644467A (en) 1995-09-28 1997-07-01 Applied Materials, Inc. Method and structure for improving gas breakdown resistance and reducing the potential of arcing in a electrostatic chuck
US5711851A (en) 1996-07-12 1998-01-27 Micron Technology, Inc. Process for improving the performance of a temperature-sensitive etch process
US6095426A (en) * 1997-11-07 2000-08-01 Siemens Building Technologies Room temperature control apparatus having feedforward and feedback control and method
KR100254793B1 (ko) * 1997-12-08 2000-05-01 윤종용 반도체장치 제조설비의 케미컬 분사장치 및 그 장치에 사용되는폐액조
US6018932A (en) 1998-01-07 2000-02-01 Premark Feg L.L.C. Gas exchange apparatus
US5997649A (en) * 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
US6125025A (en) 1998-09-30 2000-09-26 Lam Research Corporation Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors
US6368975B1 (en) 1999-07-07 2002-04-09 Applied Materials, Inc. Method and apparatus for monitoring a process by employing principal component analysis
US6776801B2 (en) 1999-12-16 2004-08-17 Sail Star Inc. Dry cleaning method and apparatus
AU3084101A (en) * 2000-01-05 2001-07-16 Tokyo Electron Limited A method of wafer band-edge measurement using transmission spectroscopy and a process for controlling the temperature uniformity of a wafer
JP2001237226A (ja) 2000-02-23 2001-08-31 Kobe Steel Ltd プラズマ処理装置
US6635117B1 (en) 2000-04-26 2003-10-21 Axcelis Technologies, Inc. Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
US6606234B1 (en) 2000-09-05 2003-08-12 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method for forming an electrostatic chuck having porous regions for fluid flow
US7069984B2 (en) * 2001-02-08 2006-07-04 Oriol Inc. Multi-channel temperature control system for semiconductor processing facilities
US20020139477A1 (en) * 2001-03-30 2002-10-03 Lam Research Corporation Plasma processing method and apparatus with control of plasma excitation power
JP3708031B2 (ja) * 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
US6651761B1 (en) * 2001-09-27 2003-11-25 Ford Global Technologies, Llc Temperature control system for fuel cell electric vehicle cooling circuit
US6921724B2 (en) * 2002-04-02 2005-07-26 Lam Research Corporation Variable temperature processes for tunable electrostatic chuck
US6831021B2 (en) * 2002-06-12 2004-12-14 Applied Materials, Inc. Plasma method and apparatus for processing a substrate
JP2004063670A (ja) * 2002-07-26 2004-02-26 Dainippon Screen Mfg Co Ltd 制御装置および制御方法並びに熱処理装置および熱処理方法
CN1745282B (zh) * 2002-12-09 2010-04-21 哈德逊技术公司 用于优化致冷系统的方法和设备
US7221553B2 (en) * 2003-04-22 2007-05-22 Applied Materials, Inc. Substrate support having heat transfer system
JP2005026552A (ja) * 2003-07-04 2005-01-27 Matsushita Electric Ind Co Ltd プラズマ処理方法
DE10336599B4 (de) * 2003-08-08 2016-08-04 Daimler Ag Verfahren zur Ansteuerung eines Thermostaten in einem Kühlkreislauf eines Verbrennungsmotors
WO2005031790A1 (en) * 2003-09-22 2005-04-07 Mks Instruments, Inc. Method and apparatus for preventing instabilities in radio-frequency plasma processing
JP2005123308A (ja) * 2003-10-15 2005-05-12 Hitachi Kokusai Electric Inc 基板処理装置
JP2005210080A (ja) * 2003-12-25 2005-08-04 Tokyo Electron Ltd 温度調節方法及び温度調節装置
US7200996B2 (en) * 2004-05-06 2007-04-10 United Technologies Corporation Startup and control methods for an ORC bottoming plant
JP4522783B2 (ja) * 2004-08-03 2010-08-11 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
US7544251B2 (en) 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
TWI314842B (en) 2005-01-28 2009-09-11 Advanced Display Proc Eng Co Plasma processing apparatus
JP2006339253A (ja) 2005-05-31 2006-12-14 Toshiba Corp プラズマ処理装置及びプラズマ処理方法
JP2006351887A (ja) 2005-06-17 2006-12-28 Hitachi High-Technologies Corp プラズマ処理装置
GB0516695D0 (en) * 2005-08-15 2005-09-21 Boc Group Plc Microwave plasma reactor
JP4878801B2 (ja) * 2005-09-26 2012-02-15 株式会社日立国際電気 基板処理装置、半導体装置の製造方法
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
JP4779807B2 (ja) 2006-05-29 2011-09-28 株式会社島津製作所 Ｉｃｐ発光分光分析装置
US20080060978A1 (en) 2006-06-14 2008-03-13 Paul Wegner Handling and extracting hydrocarbons from tar sands
CN101495822A (zh) * 2006-07-10 2009-07-29 埃地沃兹真空系统有限公司 控制温度的方法
JP4815298B2 (ja) 2006-07-31 2011-11-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
US20080035306A1 (en) 2006-08-08 2008-02-14 White John M Heating and cooling of substrate support
US20080148706A1 (en) * 2006-12-22 2008-06-26 Mark Beauregard Method of maintaining aircraft gas turbine engine
JP4838197B2 (ja) 2007-06-05 2011-12-14 東京エレクトロン株式会社 プラズマ処理装置，電極温度調整装置，電極温度調整方法
US20090065181A1 (en) 2007-09-07 2009-03-12 Spx Cooling Technologies, Inc. System and method for heat exchanger fluid handling with atmospheric tower
WO2009076576A2 (en) 2007-12-12 2009-06-18 Eco2 Plastics Continuous system for processing particles
JP4486135B2 (ja) * 2008-01-22 2010-06-23 東京エレクトロン株式会社 温度制御機構およびそれを用いた処理装置
JP5551343B2 (ja) 2008-05-14 2014-07-16 東京エレクトロン株式会社 誘導結合プラズマ処理装置
US8596336B2 (en) 2008-06-03 2013-12-03 Applied Materials, Inc. Substrate support temperature control
MX2011003685A (es) 2008-10-06 2011-09-01 Sunnovations Inc Sistema adaptable de bombeo automatico para calfeaccion solar de agua con proteccion de sobrecalentamiento.
JP5374109B2 (ja) * 2008-10-17 2013-12-25 株式会社アルバック 加熱真空処理方法
US20100116788A1 (en) 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
DE112010000737T5 (de) 2009-02-11 2013-01-17 Applied Materials, Inc. Nichtkontakt-Bearbeitung von Substraten
US8404572B2 (en) 2009-02-13 2013-03-26 Taiwan Semiconductor Manufacturing Co., Ltd Multi-zone temperature control for semiconductor wafer
US8916793B2 (en) 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US9338871B2 (en) 2010-01-29 2016-05-10 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
US8880227B2 (en) 2010-05-27 2014-11-04 Applied Materials, Inc. Component temperature control by coolant flow control and heater duty cycle control
US8608852B2 (en) 2010-06-11 2013-12-17 Applied Materials, Inc. Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079415A (ja) * 2003-09-02 2005-03-24 Hitachi High-Technologies Corp プラズマ処理装置
US20070091537A1 (en) * 2005-10-20 2007-04-26 Applied Materials, Inc. Method for agile workpiece temperature control in a plasma reactor using a thermal model
US20090310645A1 (en) * 2008-06-16 2009-12-17 Hitachi-High Technologies Corporation Sample temperature control method

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US9639097B2 (en) 2017-05-02
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KR20130020802A (ko) 2013-02-28
WO2011149790A2 (en) 2011-12-01
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TWI480918B (zh) 2015-04-11
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WO2011149790A3 (en) 2012-01-26
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