TWI615883B - 用於藉由冷卻劑流量控制及加熱器任務週期控制之組件溫度控制的方法及電腦可讀取媒體 - Google Patents
用於藉由冷卻劑流量控制及加熱器任務週期控制之組件溫度控制的方法及電腦可讀取媒體 Download PDFInfo
- Publication number
- TWI615883B TWI615883B TW105137549A TW105137549A TWI615883B TW I615883 B TWI615883 B TW I615883B TW 105137549 A TW105137549 A TW 105137549A TW 105137549 A TW105137549 A TW 105137549A TW I615883 B TWI615883 B TW I615883B
- Authority
- TW
- Taiwan
- Prior art keywords
- temperature
- control
- plasma
- coolant
- recipe
- Prior art date
Links
- 239000002826 coolant Substances 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000012545 processing Methods 0.000 claims abstract description 75
- 230000004044 response Effects 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims description 60
- 238000012546 transfer Methods 0.000 claims description 44
- 230000008569 process Effects 0.000 claims description 25
- 230000008859 change Effects 0.000 claims description 20
- 230000001052 transient effect Effects 0.000 claims description 18
- 230000002829 reductive effect Effects 0.000 claims description 8
- 230000001419 dependent effect Effects 0.000 claims description 4
- 238000004422 calculation algorithm Methods 0.000 abstract description 20
- 238000005265 energy consumption Methods 0.000 abstract 1
- 230000006870 function Effects 0.000 description 42
- 238000001816 cooling Methods 0.000 description 35
- 238000010586 diagram Methods 0.000 description 17
- 238000001020 plasma etching Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 238000004364 calculation method Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000007726 management method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000001364 causal effect Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B15/00—Systems controlled by a computer
- G05B15/02—Systems controlled by a computer electric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32908—Utilities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US34907310P | 2010-05-27 | 2010-05-27 | |
| US61/349,073 | 2010-05-27 | ||
| US13/040,149 US8880227B2 (en) | 2010-05-27 | 2011-03-03 | Component temperature control by coolant flow control and heater duty cycle control |
| US13/040,149 | 2011-03-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201709256A TW201709256A (zh) | 2017-03-01 |
| TWI615883B true TWI615883B (zh) | 2018-02-21 |
Family
ID=45004685
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105137549A TWI615883B (zh) | 2010-05-27 | 2011-05-24 | 用於藉由冷卻劑流量控制及加熱器任務週期控制之組件溫度控制的方法及電腦可讀取媒體 |
| TW104106858A TWI564930B (zh) | 2010-05-27 | 2011-05-24 | 藉由冷卻劑流量控制及加熱器任務週期控制之組件溫度控制 |
| TW100118159A TWI480918B (zh) | 2010-05-27 | 2011-05-24 | 藉由冷卻劑流量控制及加熱器任務週期控制之組件溫度控制 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104106858A TWI564930B (zh) | 2010-05-27 | 2011-05-24 | 藉由冷卻劑流量控制及加熱器任務週期控制之組件溫度控制 |
| TW100118159A TWI480918B (zh) | 2010-05-27 | 2011-05-24 | 藉由冷卻劑流量控制及加熱器任務週期控制之組件溫度控制 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8880227B2 (enExample) |
| JP (1) | JP2013536539A (enExample) |
| KR (1) | KR101476727B1 (enExample) |
| CN (2) | CN102907181B (enExample) |
| TW (3) | TWI615883B (enExample) |
| WO (1) | WO2011149790A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI897942B (zh) * | 2020-05-08 | 2025-09-21 | 美商應用材料股份有限公司 | 處理腔室與控制處理腔室中的部件的溫度之方法以及用於記錄在其上相關指令的非暫態電腦可讀取儲存媒體 |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5465954B2 (ja) * | 2008-09-29 | 2014-04-09 | 株式会社日立国際電気 | 基板処理装置及び判断プログラムを格納する記憶媒体及び基板処理装置の表示方法 |
| US8916793B2 (en) | 2010-06-08 | 2014-12-23 | Applied Materials, Inc. | Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow |
| US9338871B2 (en) | 2010-01-29 | 2016-05-10 | Applied Materials, Inc. | Feedforward temperature control for plasma processing apparatus |
| US8880227B2 (en) | 2010-05-27 | 2014-11-04 | Applied Materials, Inc. | Component temperature control by coolant flow control and heater duty cycle control |
| US8580693B2 (en) * | 2010-08-27 | 2013-11-12 | Applied Materials, Inc. | Temperature enhanced electrostatic chucking in plasma processing apparatus |
| JP5732941B2 (ja) * | 2011-03-16 | 2015-06-10 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法 |
| JP5712741B2 (ja) * | 2011-03-31 | 2015-05-07 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ処理方法及び記憶媒体 |
| US9165804B2 (en) | 2011-04-29 | 2015-10-20 | Applied Materials, Inc. | Methods of cooling process chamber components |
| US10274270B2 (en) | 2011-10-27 | 2019-04-30 | Applied Materials, Inc. | Dual zone common catch heat exchanger/chiller |
| US20140069130A1 (en) * | 2012-09-10 | 2014-03-13 | Semicat, Inc. | Temperature control of semiconductor processing chambers |
| US9436497B2 (en) * | 2012-09-10 | 2016-09-06 | Apple Inc. | Linking multiple independent control systems to distribute response |
| JP5998010B2 (ja) | 2012-10-24 | 2016-09-28 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置、基板処理システム、基板処理装置の制御方法、プログラムおよび記録媒体 |
| JP6070145B2 (ja) * | 2012-12-13 | 2017-02-01 | オムロン株式会社 | 調節器、操作量出力方法、プログラムおよび記憶媒体 |
| JP6159172B2 (ja) * | 2013-06-26 | 2017-07-05 | 東京エレクトロン株式会社 | 温度制御方法及びプラズマ処理装置 |
| JP6230437B2 (ja) * | 2014-02-04 | 2017-11-15 | 東京エレクトロン株式会社 | 温度測定方法及びプラズマ処理システム |
| JP6158111B2 (ja) * | 2014-02-12 | 2017-07-05 | 東京エレクトロン株式会社 | ガス供給方法及び半導体製造装置 |
| JP6123741B2 (ja) * | 2014-06-20 | 2017-05-10 | トヨタ自動車株式会社 | 冷却器 |
| US9823636B2 (en) * | 2014-07-29 | 2017-11-21 | Dell Products L.P. | Systems and methods for parallel feedback temperature control |
| CN104155749A (zh) * | 2014-09-04 | 2014-11-19 | 中国科学院光电技术研究所 | 一种可用于大口径地基太阳望远镜的热视场光阑温控装置 |
| US9872341B2 (en) | 2014-11-26 | 2018-01-16 | Applied Materials, Inc. | Consolidated filter arrangement for devices in an RF environment |
| US20160149733A1 (en) * | 2014-11-26 | 2016-05-26 | Applied Materials, Inc. | Control architecture for devices in an rf environment |
| US11513042B2 (en) * | 2015-01-26 | 2022-11-29 | SPEX SamplePrep, LLC | Power-compensated fusion furnace |
| US10240870B2 (en) | 2015-01-26 | 2019-03-26 | Spex Sample Prep, Llc | Method for operating a power-compensated fusion furnace |
| US10780447B2 (en) * | 2016-04-26 | 2020-09-22 | Applied Materials, Inc. | Apparatus for controlling temperature uniformity of a showerhead |
| US11837479B2 (en) | 2016-05-05 | 2023-12-05 | Applied Materials, Inc. | Advanced temperature control for wafer carrier in plasma processing chamber |
| US20180053666A1 (en) | 2016-08-19 | 2018-02-22 | Applied Materials, Inc. | Substrate carrier with array of independently controllable heater elements |
| US10725485B2 (en) * | 2016-12-15 | 2020-07-28 | Lam Research Corporation | System and method for calculating substrate support temperature |
| DE102018204585A1 (de) * | 2017-03-31 | 2018-10-04 | centrotherm international AG | Plasmagenerator, Plasma-Behandlungsvorrichtung und Verfahren zum gepulsten Bereitstellen von elektrischer Leistung |
| US10867812B2 (en) * | 2017-08-30 | 2020-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor manufacturing system and control method |
| US10415899B2 (en) * | 2017-12-28 | 2019-09-17 | Asm Ip Holding B.V. | Cooling system, substrate processing system and flow rate adjusting method for cooling medium |
| US10816244B2 (en) | 2018-03-01 | 2020-10-27 | Laird Thermal Systems, Inc. | Compressor chiller systems including thermoelectric modules, and corresponding control methods |
| JP7456951B2 (ja) | 2018-07-05 | 2024-03-27 | ラム リサーチ コーポレーション | 基板処理システムにおける基板支持体の動的温度制御 |
| US11183400B2 (en) | 2018-08-08 | 2021-11-23 | Lam Research Corporation | Progressive heating of components of substrate processing systems using TCR element-based heaters |
| US10971384B2 (en) * | 2018-09-13 | 2021-04-06 | Lam Research Corporation | Auto-calibrated process independent feedforward control for processing substrates |
| WO2020068546A2 (en) * | 2018-09-24 | 2020-04-02 | Lam Research Corporation | Multiplexed high tcr based ampoule heaters |
| TW202531282A (zh) * | 2018-11-30 | 2025-08-01 | 日商東京威力科創股份有限公司 | 電漿處理裝置 |
| WO2020122933A1 (en) * | 2018-12-14 | 2020-06-18 | Hewlett-Packard Development Company, L.P. | Power control based on cumulative error |
| US11533783B2 (en) * | 2019-07-18 | 2022-12-20 | Applied Materials, Inc. | Multi-zone heater model-based control in semiconductor manufacturing |
| CN110440602A (zh) * | 2019-08-13 | 2019-11-12 | 德淮半导体有限公司 | 一种冷却水自动调节系统 |
| ES2988964T3 (es) * | 2019-09-06 | 2024-11-22 | Quintus Technologies Ab | Procedimiento para controlar la velocidad de enfriamiento en una disposición de prensado en caliente, un módulo de control y una disposición de prensado propiamente dicha |
| US11313588B2 (en) * | 2019-09-20 | 2022-04-26 | Camus Hydronics Ltd. | System and method for controlling water heater output temperature |
| CN112951694B (zh) * | 2019-11-26 | 2024-05-10 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置及其半导体晶圆的处理方法 |
| CN112859498B (zh) | 2019-11-28 | 2022-07-12 | 中强光电股份有限公司 | 照明装置、投影系统及其操作方法 |
| KR20210126387A (ko) * | 2020-04-10 | 2021-10-20 | 주성엔지니어링(주) | 기판 처리 장치 및 방법 |
| US12191169B2 (en) | 2020-07-19 | 2025-01-07 | Applied Materials, Inc. | Systems and methods for faceplate temperature control |
| CN114402425B (zh) * | 2020-08-18 | 2025-08-15 | 玛特森技术公司 | 具有冷却系统的快速热处理系统 |
| JP7528659B2 (ja) * | 2020-09-10 | 2024-08-06 | 東京エレクトロン株式会社 | 基板を加熱する装置及び方法 |
| US12326282B2 (en) | 2023-01-05 | 2025-06-10 | Applied Materials, Inc. | Cooling flow in substrate processing according to predicted cooling parameters |
| WO2025230886A1 (en) * | 2024-05-01 | 2025-11-06 | Lam Research Corporation | Temperature control of substrate processing chamber plates using pwm to analog converters and proportional valves |
| US20250349575A1 (en) * | 2024-05-09 | 2025-11-13 | Applied Materials, Inc. | Semiconductor processing chamber thermal control |
| CN118655933B (zh) * | 2024-08-20 | 2024-11-05 | 中国计量大学 | 提高量热仪等温控制收敛速度的方法、系统、设备及介质 |
| CN118963456B (zh) * | 2024-10-17 | 2025-01-24 | 青岛四方思锐智能技术有限公司 | 一种反应腔室温度的控制系统、方法及电子设备 |
| CN120523262B (zh) * | 2025-07-28 | 2025-10-31 | 上海芯源微企业发展有限公司 | 机台加热系统的控温方法、装置、可读介质及电子设备 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070091537A1 (en) * | 2005-10-20 | 2007-04-26 | Applied Materials, Inc. | Method for agile workpiece temperature control in a plasma reactor using a thermal model |
| TW200727325A (en) * | 2005-08-15 | 2007-07-16 | Boc Group Plc | Method of treating a gas stream |
| US20090183677A1 (en) * | 2008-01-22 | 2009-07-23 | Tokyo Electron Limited | Temperature control device and processing apparatus using the same |
| US20090310645A1 (en) * | 2008-06-16 | 2009-12-17 | Hitachi-High Technologies Corporation | Sample temperature control method |
Family Cites Families (61)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0796170B2 (ja) * | 1990-01-12 | 1995-10-18 | 日産車体株式会社 | ロボットセット治具 |
| JP3147392B2 (ja) | 1991-03-04 | 2001-03-19 | 宇部サイコン株式会社 | 熱可塑性樹脂組成物 |
| JPH0796170A (ja) * | 1993-09-09 | 1995-04-11 | Tokyo Electron Ltd | 熱処理装置の温度制御方法 |
| US5435145A (en) | 1994-03-03 | 1995-07-25 | General Electric Company | Refrigerant flow rate control based on liquid level in simple vapor compression refrigeration cycles |
| US5548470A (en) | 1994-07-19 | 1996-08-20 | International Business Machines Corporation | Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity |
| US5644467A (en) | 1995-09-28 | 1997-07-01 | Applied Materials, Inc. | Method and structure for improving gas breakdown resistance and reducing the potential of arcing in a electrostatic chuck |
| US5711851A (en) | 1996-07-12 | 1998-01-27 | Micron Technology, Inc. | Process for improving the performance of a temperature-sensitive etch process |
| US6095426A (en) * | 1997-11-07 | 2000-08-01 | Siemens Building Technologies | Room temperature control apparatus having feedforward and feedback control and method |
| KR100254793B1 (ko) * | 1997-12-08 | 2000-05-01 | 윤종용 | 반도체장치 제조설비의 케미컬 분사장치 및 그 장치에 사용되는폐액조 |
| US6018932A (en) | 1998-01-07 | 2000-02-01 | Premark Feg L.L.C. | Gas exchange apparatus |
| US5997649A (en) * | 1998-04-09 | 1999-12-07 | Tokyo Electron Limited | Stacked showerhead assembly for delivering gases and RF power to a reaction chamber |
| US6125025A (en) | 1998-09-30 | 2000-09-26 | Lam Research Corporation | Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors |
| US6368975B1 (en) | 1999-07-07 | 2002-04-09 | Applied Materials, Inc. | Method and apparatus for monitoring a process by employing principal component analysis |
| US6776801B2 (en) | 1999-12-16 | 2004-08-17 | Sail Star Inc. | Dry cleaning method and apparatus |
| US6891124B2 (en) * | 2000-01-05 | 2005-05-10 | Tokyo Electron Limited | Method of wafer band-edge measurement using transmission spectroscopy and a process for controlling the temperature uniformity of a wafer |
| JP2001237226A (ja) | 2000-02-23 | 2001-08-31 | Kobe Steel Ltd | プラズマ処理装置 |
| US6635117B1 (en) | 2000-04-26 | 2003-10-21 | Axcelis Technologies, Inc. | Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system |
| US6606234B1 (en) | 2000-09-05 | 2003-08-12 | Saint-Gobain Ceramics & Plastics, Inc. | Electrostatic chuck and method for forming an electrostatic chuck having porous regions for fluid flow |
| US7069984B2 (en) * | 2001-02-08 | 2006-07-04 | Oriol Inc. | Multi-channel temperature control system for semiconductor processing facilities |
| US20020139477A1 (en) * | 2001-03-30 | 2002-10-03 | Lam Research Corporation | Plasma processing method and apparatus with control of plasma excitation power |
| JP3708031B2 (ja) * | 2001-06-29 | 2005-10-19 | 株式会社日立製作所 | プラズマ処理装置および処理方法 |
| US6651761B1 (en) * | 2001-09-27 | 2003-11-25 | Ford Global Technologies, Llc | Temperature control system for fuel cell electric vehicle cooling circuit |
| US6921724B2 (en) * | 2002-04-02 | 2005-07-26 | Lam Research Corporation | Variable temperature processes for tunable electrostatic chuck |
| EP1512165A2 (en) * | 2002-06-12 | 2005-03-09 | Applied Materials, Inc. | Plasma apparatus and method for processing a substrate |
| JP2004063670A (ja) * | 2002-07-26 | 2004-02-26 | Dainippon Screen Mfg Co Ltd | 制御装置および制御方法並びに熱処理装置および熱処理方法 |
| CN1745282B (zh) * | 2002-12-09 | 2010-04-21 | 哈德逊技术公司 | 用于优化致冷系统的方法和设备 |
| US7221553B2 (en) * | 2003-04-22 | 2007-05-22 | Applied Materials, Inc. | Substrate support having heat transfer system |
| JP2005026552A (ja) * | 2003-07-04 | 2005-01-27 | Matsushita Electric Ind Co Ltd | プラズマ処理方法 |
| DE10336599B4 (de) | 2003-08-08 | 2016-08-04 | Daimler Ag | Verfahren zur Ansteuerung eines Thermostaten in einem Kühlkreislauf eines Verbrennungsmotors |
| JP2005079415A (ja) | 2003-09-02 | 2005-03-24 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| EP1671347B1 (en) * | 2003-09-22 | 2015-02-11 | MKS Instruments, Inc. | Method and apparatus for preventing instabilities in radio-frequency plasma processing |
| JP2005123308A (ja) * | 2003-10-15 | 2005-05-12 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP2005210080A (ja) * | 2003-12-25 | 2005-08-04 | Tokyo Electron Ltd | 温度調節方法及び温度調節装置 |
| US7200996B2 (en) * | 2004-05-06 | 2007-04-10 | United Technologies Corporation | Startup and control methods for an ORC bottoming plant |
| JP4522783B2 (ja) | 2004-08-03 | 2010-08-11 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
| US7544251B2 (en) | 2004-10-07 | 2009-06-09 | Applied Materials, Inc. | Method and apparatus for controlling temperature of a substrate |
| TWI314842B (en) | 2005-01-28 | 2009-09-11 | Advanced Display Proc Eng Co | Plasma processing apparatus |
| JP2006339253A (ja) | 2005-05-31 | 2006-12-14 | Toshiba Corp | プラズマ処理装置及びプラズマ処理方法 |
| JP2006351887A (ja) | 2005-06-17 | 2006-12-28 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| JP4878801B2 (ja) * | 2005-09-26 | 2012-02-15 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法 |
| US8226769B2 (en) | 2006-04-27 | 2012-07-24 | Applied Materials, Inc. | Substrate support with electrostatic chuck having dual temperature zones |
| JP4779807B2 (ja) | 2006-05-29 | 2011-09-28 | 株式会社島津製作所 | Ｉｃｐ発光分光分析装置 |
| US20080060978A1 (en) | 2006-06-14 | 2008-03-13 | Paul Wegner | Handling and extracting hydrocarbons from tar sands |
| CN101495822A (zh) * | 2006-07-10 | 2009-07-29 | 埃地沃兹真空系统有限公司 | 控制温度的方法 |
| JP4815298B2 (ja) | 2006-07-31 | 2011-11-16 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| US20080035306A1 (en) | 2006-08-08 | 2008-02-14 | White John M | Heating and cooling of substrate support |
| US20080148706A1 (en) * | 2006-12-22 | 2008-06-26 | Mark Beauregard | Method of maintaining aircraft gas turbine engine |
| JP4838197B2 (ja) * | 2007-06-05 | 2011-12-14 | 東京エレクトロン株式会社 | プラズマ処理装置，電極温度調整装置，電極温度調整方法 |
| US20090065181A1 (en) | 2007-09-07 | 2009-03-12 | Spx Cooling Technologies, Inc. | System and method for heat exchanger fluid handling with atmospheric tower |
| WO2009076576A2 (en) | 2007-12-12 | 2009-06-18 | Eco2 Plastics | Continuous system for processing particles |
| JP5551343B2 (ja) | 2008-05-14 | 2014-07-16 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置 |
| US8596336B2 (en) | 2008-06-03 | 2013-12-03 | Applied Materials, Inc. | Substrate support temperature control |
| JP5631318B2 (ja) | 2008-10-06 | 2014-11-26 | スンノベイションズ、インコーポレイテッド | 過熱防止機能を備えた適応型セルフポンピング太陽熱給湯システム |
| JP5374109B2 (ja) * | 2008-10-17 | 2013-12-25 | 株式会社アルバック | 加熱真空処理方法 |
| US20100116788A1 (en) | 2008-11-12 | 2010-05-13 | Lam Research Corporation | Substrate temperature control by using liquid controlled multizone substrate support |
| JP5655010B2 (ja) | 2009-02-11 | 2015-01-14 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 非接触基板処理のための方法及び装置 |
| US8404572B2 (en) | 2009-02-13 | 2013-03-26 | Taiwan Semiconductor Manufacturing Co., Ltd | Multi-zone temperature control for semiconductor wafer |
| US8916793B2 (en) | 2010-06-08 | 2014-12-23 | Applied Materials, Inc. | Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow |
| US9338871B2 (en) | 2010-01-29 | 2016-05-10 | Applied Materials, Inc. | Feedforward temperature control for plasma processing apparatus |
| US8880227B2 (en) | 2010-05-27 | 2014-11-04 | Applied Materials, Inc. | Component temperature control by coolant flow control and heater duty cycle control |
| US8608852B2 (en) | 2010-06-11 | 2013-12-17 | Applied Materials, Inc. | Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies |
-
2011
- 2011-03-03 US US13/040,149 patent/US8880227B2/en active Active
- 2011-05-20 CN CN201180025294.8A patent/CN102907181B/zh not_active Expired - Fee Related
- 2011-05-20 CN CN201611218907.0A patent/CN106842966B/zh active Active
- 2011-05-20 KR KR1020127032509A patent/KR101476727B1/ko active Active
- 2011-05-20 JP JP2013512105A patent/JP2013536539A/ja active Pending
- 2011-05-20 WO PCT/US2011/037436 patent/WO2011149790A2/en not_active Ceased
- 2011-05-24 TW TW105137549A patent/TWI615883B/zh not_active IP Right Cessation
- 2011-05-24 TW TW104106858A patent/TWI564930B/zh active
- 2011-05-24 TW TW100118159A patent/TWI480918B/zh not_active IP Right Cessation
-
2014
- 2014-09-25 US US14/497,253 patent/US9639097B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200727325A (en) * | 2005-08-15 | 2007-07-16 | Boc Group Plc | Method of treating a gas stream |
| US20070091537A1 (en) * | 2005-10-20 | 2007-04-26 | Applied Materials, Inc. | Method for agile workpiece temperature control in a plasma reactor using a thermal model |
| TW200952068A (en) * | 2005-10-20 | 2009-12-16 | Applied Materials Inc | A method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor |
| US20090183677A1 (en) * | 2008-01-22 | 2009-07-23 | Tokyo Electron Limited | Temperature control device and processing apparatus using the same |
| US20090310645A1 (en) * | 2008-06-16 | 2009-12-17 | Hitachi-High Technologies Corporation | Sample temperature control method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI897942B (zh) * | 2020-05-08 | 2025-09-21 | 美商應用材料股份有限公司 | 處理腔室與控制處理腔室中的部件的溫度之方法以及用於記錄在其上相關指令的非暫態電腦可讀取儲存媒體 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106842966A (zh) | 2017-06-13 |
| US20120048467A1 (en) | 2012-03-01 |
| KR20130020802A (ko) | 2013-02-28 |
| KR101476727B1 (ko) | 2014-12-26 |
| TW201528330A (zh) | 2015-07-16 |
| TW201205637A (en) | 2012-02-01 |
| TWI564930B (zh) | 2017-01-01 |
| CN102907181B (zh) | 2017-02-15 |
| CN106842966B (zh) | 2020-07-03 |
| WO2011149790A3 (en) | 2012-01-26 |
| JP2013536539A (ja) | 2013-09-19 |
| WO2011149790A2 (en) | 2011-12-01 |
| CN102907181A (zh) | 2013-01-30 |
| US8880227B2 (en) | 2014-11-04 |
| US9639097B2 (en) | 2017-05-02 |
| TW201709256A (zh) | 2017-03-01 |
| US20150134128A1 (en) | 2015-05-14 |
| TWI480918B (zh) | 2015-04-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI615883B (zh) | 用於藉由冷卻劑流量控制及加熱器任務週期控制之組件溫度控制的方法及電腦可讀取媒體 | |
| US12272575B2 (en) | Advanced temperature control for wafer carrier in plasma processing chamber | |
| KR101801070B1 (ko) | 펄스화된 열 전달 유체 흐름을 이용한 플라즈마 프로세싱 장치에서의 온도 제어 | |
| TWI631876B (zh) | 電漿處理設備之前饋溫度控制 | |
| TWI533764B (zh) | 電漿處理裝置中的快速反應熱控制方法及設備 | |
| US9984908B2 (en) | Temperature control system, semiconductor manufacturing device, and temperature control method | |
| US10553463B2 (en) | Temperature control system, semiconductor manufacturing device, and temperature control method | |
| US11158528B2 (en) | Component temperature control using a combination of proportional control valves and pulsed valves | |
| US20140224767A1 (en) | Automated algorithm for tuning of feedforward control parameters in plasma processing system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |