TWI314842B - Plasma processing apparatus - Google Patents

Description

[Technical Field] The present invention relates to a plasma processing apparatus which performs a desired treatment using a material produced in a chamber maintained in a vacuum state. [Prior Art] In the process of manufacturing a semiconductor device, a liquid crystal display: a processing device is mainly used for processing a substrate slurry processing device using a plasma, for example, for etching an etching device on a substrate, and A plasma CVD apparatus that performs chemical gas treatment on a substrate. Figure 1 is a diagram showing a plasma processing apparatus of the type of plasma processing apparatus, designated by reference numeral "1", 10 and 20, which extend horizontally in parallel and vertically load each other at the electrodes 10 And on the lower of 20, that is, the lower electrode 20 is therefore referred to as a substrate loading crystal grain. The plasma processing apparatus 1 also includes a plurality of internal lifts and a plurality of external lift bars (not shown) for assisting loading into the interior of the plasma processing apparatus 1 or removing the interior of the slurry processing apparatus 1. The interiors are extended by a plurality of holes that are raised at the edge of the lower electrode 20, so that the foot line can be moved vertically. The external lifting rods are disposed on the lower electrode 20, the plasma processing equipment plasma, to a base and a device (for example, a plasma surface). Examples of electrical phase deposition (CVD) for such electric current etching treatment In the first figure, a two-plane electrode is included, facing a substrate S, on the electrode 20. The lifting pin (not shown) processes the substrate on which the substrate is carried by the electric pin. Forming the outer sides of the internal lifting joints j. That is, the 6 1314842 is raised outside the inner pole for 12 heads of the 10 pole gas slurry J. The electric external lifting rod is disposed on the side of the lower electrode 20 The space defined between the inner side walls of the apparatus 1 of the plasma can be vertically moved by the external lifting rods. Of course, in some cases, the substrate can be achieved without using the lifting rods. Feed in.

The plasma processing apparatus 1 further includes an exhaust unit 40 for evacuating the inside of the plasma processing apparatus 1. The exhaust unit 40 uses a pump provided outside the plasma processing apparatus 1 to suck out the gas existing in the first portion of the plasma processing apparatus, and discharges the inhaled gas outward, and the plasma processing apparatus is used. The interior of 1 is maintained in a vacuum state. The upper electrode 10 is disposed to face the lower electrode 20 vertically. The power-on 10 not only performs the electrode function, but also acts as a processing gas supply to treat the processing gas between the electrodes 10 and 20. Thus, a shower head should be coupled to the lower end of the upper electrode 10 as shown in Fig. 1. The bleed air 1 2 is provided with a plurality of process gas diffusion holes 14 having a very small diameter. Therefore, the processing gas can be uniformly supplied into the space defined between the electrodes 20 by the gas shower head 12. When high frequency power is applied between the isoelectrics 10 and 20, the processing body supplied between the electrodes 10 and 20 is converted into a plasma, which is sequentially used to treat the surface of the substrate exposed to the plasma. . The substrate S to be treated is placed on the lower electrode 20 and processed by electricity. Since the plasma is formed inside the plasma processing apparatus 1, that is, it is formed in a chamber, and an increase in the temperature inside the chamber affects the treated substrate S. Then, a refrigerant circulation passage 30 is formed to penetrate the lower electrode 20, so that the refrigerant circulation passage 30 will horizontally extend through all portions of the lower portion 7 1314842 pole 20 to prevent the temperature of the substrate S from being During the processing of the substrate, it is increased above the preset temperature. By the media circulator (not shown) provided on the outer side of the plasma processing apparatus 1, the refrigerant can be supplied to the refrigerant circulation passage 30, and the supplied refrigerant can be circulated through the refrigerant circulation passage 30. Therefore, the temperature of the lower electrode 20 is maintained at a preset temperature by the refrigerant circulating through the refrigerant circulation passage 30. Therefore, the substrate S placed on the lower electrode 20 will be maintained at a preset temperature.

Similarly, a refrigerant circulation passage 16 is formed to penetrate the upper electrode 10, so that the refrigerant circulation passage 16 penetrates all the portions of the upper electrode 10 to extend horizontally. The refrigerant circulation passage 16 is provided with a refrigerant inlet at one end thereof and a refrigerant outlet at the other end. The refrigerant from the refrigerant circulator is injected into the refrigerant circulation passage 166 via the refrigerant inlet, and is returned to the refrigerant circulator through the refrigerant outlet when the circulation is completed via the refrigerant circulation passage 16. The refrigerant circulation passage 16 prevents the processing performed by the plasma processing apparatus 1 from being affected by the temperature of the shower head 12 due to an increase in temperature during plasma generation. Meanwhile, in the conventional case, the refrigerant circulation passage 30 of the lower electrode 20 has a refrigerant inlet 32 and a refrigerant outlet 34 which are disposed on one side of the lower electrode 20 and are separated from each other by a large distance. Since the refrigerant inlet 32 and the refrigerant outlet 34 are separated from each other by a large distance, the path of the refrigerant in the lower electrode 20 is elongated. Therefore, the temperature of the refrigerant in the vicinity of the refrigerant inlet 32 and the temperature of the refrigerant in the vicinity of the refrigerant outlet 34 are extremely different. That is, when the refrigerant passes through the refrigerant circulation passage 30, the refrigerant is circulated.

1314842 When the ring passage 30 is exhausted, the temperature of the refrigerant is much higher than the temperature of the refrigerant when the refrigerant is injected into the refrigerant circulation passage 30. In actual operation, the temperature on the side of the medium inlet 3 2 is 35 ° C, and the temperature on the side of the outlet 3 4 of the refrigerant is as high as 40 °C. When such a temperature difference is generated in the electrode 20, deterioration in transmission performance of high frequency power is generated. In such a situation, a negative effect on the etching rate and the etching uniformity is also generated. Therefore, deterioration in the process manufacturing rate is caused. In particular, the temperature rise that occurs during processing is more pronounced in the central region of the electrode 20 compared to the surrounding area of the electrode 20. Therefore, due to such a phenomenon, it is necessary to reduce the temperature difference generated in the electrode 20. At the same time, recently developed plasma processing equipment uses larger electrodes to handle large areas of substrates. Related to such plasma processing equipment, the above problems become more serious because the refrigerant path in the plasma processing equipment is longer. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a plasma processing apparatus including a cooler that maintains an entire area of an electrode included in the plasma processing apparatus at a desired temperature. According to one aspect, the present invention provides a plasma processing apparatus that performs pre-setting for a substrate using plasma generated in a chamber defined by the plasma processing apparatus and Maintaining the vacuum state, the device comprises at least: an electrode unit, which includes an upper electrode and a lower inlet, and is also provided with a strip of 5, 9 1314842, a loop, and a low pre-form. Electric, it is used,

a pole, which is disposed separately in the upper and lower portions of the chamber and adapted to apply high frequency power to the chamber; a shower head disposed below the upper electrode and coupled to the upper electrode An edge is drawn downward from a lower surface of the upper electrode to supply a process gas to the chamber; and a cooler for circulating a refrigerant in the upper electrode or circulating in the lower electrode to cool the An upper electrode or the lower electrode, wherein the cooler comprises a plurality of refrigerant circulation passages formed through the upper or lower electrodes, wherein the refrigerant is circulated through the refrigerant in a plane parallel to a main surface of the upper or lower electrodes And extending, a refrigerant circulator for circulating the refrigerant in the refrigerant circulation passage, wherein each of the refrigerant circulation passages has a refrigerant inlet and a refrigerant outlet disposed at a central portion of the upper or lower electrode. According to another aspect, the present invention provides a plasma processing apparatus for performing a process for setting a substrate by using plasma generated in a chamber, the chamber being defined in the plasma processing apparatus And maintaining the vacuum state, the device comprises at least: a lower electrode disposed on a portion of the chamber and loaded with the substrate; a cooling plate disposed to be in contact with a lower surface of the lower pole, Cooling the lower electrode; and a cooling tube interposed between the lower electrode and the cooling plate, and defining a passage therein, allowing a cooling medium to circulate in the cooling tube. According to a further aspect, the present invention provides a plasma processing apparatus that performs pretreatment for a substrate using a plasma generated in a chamber, the chamber defining the plasma processing apparatus and maintaining In a vacuum state, the apparatus comprises at least: a lower electrode disposed on a lower portion of the chamber and loaded with the substrate; a cooling plate disposed to contact the surface of the lower electrode 10 1314842 to cool the a lower electrode provided with a plurality of recesses having a predetermined width and a preset depth to define a plurality of cooling medium passages; and a sealing member respectively inserted between the contact faces of the lower electrode and the cooling plate The cooling medium passage; wherein each of the cooling medium passages has a rectangular cross-sectional shape, and the cooling medium can flow through the cooling plate at a high flow rate. According to still another aspect, the present invention provides a plasma apparatus for performing a predetermined process for a substrate using a plasma generated in a chamber, the chamber defining the plasma processing apparatus And maintaining the vacuum state, the apparatus at least includes: a lower electrode disposed at a lower portion of the chamber and loaded with the substrate; and a cooling plate disposed to be in contact with a lower surface of the lower electrode Cooling the lower electrode, and is provided with a plurality of cooling medium passages formed through the cooling plate and having a rectangular cross-sectional shape; a sealing member embedded in a groove, the groove being defined by the groove a cooling medium is guided between the lower electrode and the contact surface of the cooling plate; and a heat transfer medium having excellent thermal conductivity and filled in the sealed space to lift the lower electrode and the cooling Heat transfer efficiency between the plates. According to still another aspect, the present invention provides a plasma apparatus for performing a preset process for a substrate using a plasma generated in a chamber, the chamber defining the plasma processing apparatus And maintaining the vacuum state, the apparatus at least includes: a lower electrode disposed at a lower portion of the chamber and loaded with the substrate; and a temperature regulating plate disposed to the temperature regulating plate and the lower portion The electrode is in contact with and is provided with a circulation line for cooling or heating the medium extending through the temperature regulating plate to heat or cool the lower electrode, wherein the 11

1314842 The temperature regulating plate is formed by: preparing a parison from a material having a low melting point to form a circulation line; placing the parison in a mold and filling the mold with ceramic, so that the parison is buried in the mold In the ceramic powder; and the sintered ceramic powder, thereby forming a sintered ceramic body when the parison is melted, thus leaving a space occupied by the previous parison in the portion to form a circulation line in the sintered ceramic body. According to still another aspect, the present invention provides an electrical apparatus for performing a predetermined process of a substrate using a plasma generated in a chamber, the chamber defining the plasma processing apparatus and Maintaining an empty state, the apparatus includes at least: a lower electrode disposed at a lower portion of the cavity and loaded with the substrate; a shower head including a plurality of outlets for supplying the processing gas with the substrate And an at least one refrigerant passage formed through the shower; an upper support member disposed at the top of the gas head and provided with a process air passage connected to the outlet of the air shower head, and provided with a plurality of perforations; and a refrigerant line And extending through the plurality of perforations of the upper support to connect to the refrigerant passage of the air shower head, and are spaced apart from each other by a predetermined distance of the individual surrounding surfaces of the perforations. [Embodiment] Hereinafter, an exemplary embodiment of the present invention will be described with reference to the following drawings; <First Embodiment> Referring to Fig. 3, a processing apparatus 1 according to a first embodiment of the present invention is illustrated 0 0. The plasma processing apparatus 100 includes an upper electrode 1 1 , and the porcelain powder is used in the ceramic slurry to be used in the chamber to vent the body through the gas member. Plasma 0 > - 12

1314842 Lower electrode 1 2 Ο, a shower head 1 1 2, and a cooler. Since the upper electrode 1 1 0, the lower electrode 1 2 0, and the air shower head 1 1 2 have the same structure and function as the conventional plasma processing apparatus 1, they will not be described again. The cooler according to the present embodiment is similar to the conventional cooler because the cooler functions to cool the upper electrode 1 10 or the lower electrode 1 by circulating a refrigerant in the upper electrode 11 or the lower electrode 120. The function of 2 0. However, the cooler according to the present embodiment differs from the conventional cooler in the structure and arrangement. The cooler according to the present embodiment includes a plurality of refrigerant circulation passages 132 formed throughout the lower electrode 120, and thus each of the refrigerant circulation passages 132 extends in a plane parallel to a main surface of the lower electrode, that is, horizontally Extend in the direction. The cooler also includes a refrigerant circulator (not shown) that causes a refrigerant to circulate among the refrigerant circulation passages 132. As shown in Fig. 3, the refrigerant circulation passages 133 are independently disposed in the lower electrode 120. According to this setting, each of the refrigerant circulation passages 1 3 2 has a shorter length than the conventional condition. Therefore, the refrigerant path defined by each refrigerant circulation passage 133 is also shortened, compared to the conventional situation. Therefore, the difference in refrigerant temperature between the refrigerant inlet and the refrigerant outlet is greatly reduced, and the difference in refrigerant temperature in the conventional state is at least 5. . . Each of the refrigerant circulation passages 132 has a refrigerant inlet 134 and a refrigerant outlet 136 which are disposed in a central portion of the lower electrode 120, which is different from the conventional condition. The reason why the refrigerant inlet 134 and the refrigerant outlet 136 are disposed in the central portion of the lower electrode 120 is that 俾 is compensated between the central portion of the lower electrode 120 and the peripheral portion of the lower electrode 120. During plasma processing, 13

The large temperature difference exhibited by 1314842. That is, the refrigerant inlet 133, i.e., the portion of the refrigerant circulation passage 133 having the lowest refrigerant temperature, is disposed in the central portion of the lower electrode 120 to reduce the temperature of the central portion of the lower electrode 120. There are three types of the arrangement of the refrigerant circulation passages 1 3 2 located in the lower electrode 120. It is described below. The first type is that the refrigerant circulation channels 133 are disposed on opposite sides of the center C of the lower electrode 120, that is, on the left and right sides of the lower electrode 120. In order to allow the refrigerant flow to flow independently through the individual refrigerant circulation channels 132, each refrigerant circulation passage 132 has a refrigerant inlet and a refrigerant outlet. This type is shown in Figure 4. In the situation of Fig. 4, 'two independent refrigerant circulation passages 1 3 2 a and 1 3 2b should be disposed on the left and right sides of the lower electrode 120, so that independent refrigerant flows respectively flow through the refrigerant circulation. Channel 1 3 2 a and 1 3 2 b. For independent refrigerant streams, the refrigerant circulation passages 132a and 132b should be provided with individual refrigerant inlets 134a and 134b, and individual refrigerant outlets 1 3 6 a and 1 3 6b. In this case, the corresponding refrigerant inlets 134a and 134b, and the corresponding refrigerant outlets 136a and 136b, are preferably disposed to face each other in a diagonal direction, rather than adjacent to each other. That is, the corresponding refrigerant inlets 1 34a and 1 34b and the corresponding refrigerant outlets 1 3 6 a and 1 3 6b are preferably symmetrically disposed with respect to the center C of the lower electrode 1 2 0 and face each other. The reason why the refrigerant inlets 134a and 134b, or the refrigerant outlets 1 3 6 a and 1 3 6b are disposed to face each other in the diagonal direction, is to avoid a temperature difference between different portions of the lower electrode, wherein Because of the refrigerant inlets 1 34a and 1 34b or between the refrigerant outlets 14

1314842 The temperature difference between 136a and 136b is provided with the refrigerant inlets 134a and 13 4b, or the refrigerant outlets 136a and 136b. That is, the temperature of the lower electrode 120 is lowered by the refrigerant inlets 134a and 134b due to the increase of the refrigerant outlets 136a and 136b, so that the lower electrode 120 is maintained at a desired temperature. The second type is that a plurality of refrigerant circulation channels 133 are disposed in the second layer of the lower electrode 120, so that the refrigerant circulation channels 132 in one layer are parallel to the associated refrigerant circulation channels 133 in the other layer. extend. This type is shown in Figure 5. In the case of Fig. 5, the two refrigerant circulation passages 1 3 2 a and 1 3 2 b are disposed to extend parallel to each other and to be opposite to each other. Here, "reverse setting" means that the corresponding refrigerant inlets 134a and 134b of the refrigerant circulation passages 1 3 2 a and 1 3 2b, and the corresponding refrigerant outlets 136a and 136b should not be disposed adjacent to each other, and a refrigerant The refrigerant inlet 134a or 13 4b of the circulation passage 1 3 2 a or 1 3 2b, and the refrigerant outlet 136b or 136a of the other refrigerant circulation passage 13 2b or 132a are disposed adjacent to each other, and thus in the refrigerant circulation passages The flow direction of the refrigerant flow will be opposite to each other. In the illustrated condition, the refrigerant inlets 134a and 134b and the refrigerant outlets 136a and 136b should be disposed in the peripheral region of the lower electrode 120. However, the refrigerant inlets 134a and 134b and the refrigerant outlets 136a and 136b are disposed in the central portion of the lower electrode 120, so as to avoid a temperature difference between the center of the lower electrode 1 2 0 and the surrounding area. The third type is that a plurality of refrigerant circulation channels 133 are disposed in the two layers of the lower electrode 120, and thus are symmetrically disposed in the left and right sides of the lower electrode 120 layers, and on the first layer. Each refrigerant circulation channel 1 3 2 will be 15

1314842 extends parallel to the associated refrigerant circulation passage 132 in the other layer and is depicted in FIG. In the situation of Fig. 6, four refrigerant circulations to 132d are disposed in the second layer, so that the two refrigerant circulation channels 1 3 2b ( 13 2c and 13 2d) are symmetrically arranged in each layer with poles 1 2 0 respectively. Left and right. In such a situation, the upper annular passage 1 3 2 a or 1 3 2b preferably extends parallel to the associated cold passage 132c or 132d of the lower layer, and has a reversely disposed refrigerant or 134b and a refrigerant outlet 136a or 1 36b, which is opposite to the refrigerant inlets 13 4c or 134d and 136c or 136d of the associated passage 132c or 132d. According to this arrangement, the lower electrode 120 can be maintained at a desired temperature. In the third type of condition, the cold passages 132c and 132d provided in the lower layer preferably extend perpendicularly to the cold passages 132a and 132b provided in the upper layer, as shown in Fig. 7. The main portions of the fine refrigerant circulation passages 1 3 2 c and 1 3 2 d are extended by the main portions of the vertical circulation passages 1 3 2 a and 1 3 2b. In this case, the entire area of the lower electrode 120 can be maintained in a third type of condition, and the refrigerants 132a and 132b disposed in the upper layer should be distributed throughout the entire area of the lower electrode 120 in the lower layer. The refrigerant circulation channels 1 3 2 c and 1 3 2 d should be divided into the central region of the lower electrode 120. The cold channels 132c and 132d disposed in the lower layer are distributed throughout the central portion of the lower electrode 120 so as to avoid the surrounding area of the lower electrode 120 which is present in the central region of the lower electrode 120. So in this situation. This type of channel 1 32a 132a is associated with the downstream refrigerant refrigerant circulation inlet 134a refrigerant circulation. Refrigerant outlet The temperature of the entire region of the medium circulation medium circulation section. In the loop channel domain, the reason for routing to the media loop is temperature.

1314842 The arrangement of the refrigerant circulation passage in the lower electrode 120, and thus the density of the refrigerant circulation passage in the central region of the pole 120 should be higher than the density of the refrigerant circulation passage in the peripheral region of the electrode 120 The crucible is such that the central region of the electrode 120 is maintained at a temperature with the surrounding region of the lower electrode 120. Of course, the refrigerant circulation channels and 132b disposed in the upper layer should be distributed to the central region of the lower electrode 120, and the refrigerant circulation channels 1 3 2 c and 1 3 2 d in the lower layer should be distributed throughout. The entire area of the lower electrode 1 20 . <Second Embodiment> Referring to Fig. 8, a processing apparatus according to a second embodiment of the present invention is illustrated. Although not shown in Fig. 8, the plasma processing apparatus has a processing chamber having the same structure as the conventional processing chamber described above, and an electrode disposed at a higher portion of the processing chamber to bring in a desired gas. The processing chamber, and an electrode unit disposed in the portion of the processing chamber, such that the electrode unit faces the upper electrode. The substrate to be treated is carried on the electrode unit. Electrical energy is applied to the electrode unit. As shown in Fig. 8, the electrode unit includes a susceptor. The electrode unit also includes a rim, a cooling plate 216, and a lower electrode 214, which are sequentially formed on the pedestal in sequence. A plurality of insulating plates 2 2 2 are to be mounted on the electrodes, so that the insulating plates 2 2 2 surround the periphery of the electrode unit to the peripheral portion of the top surface of the electrode unit, so as to avoid plasma damage of the electrode unit. . A cooling tube 203 is disposed on the lower electrode 2 1 4 and the cooling plate 2 is powered down, and the lower portion 132a is placed until the plasma includes a lower portion of the upper portion of the body. Face and protection from 16 of 17

Between 1314842. A cooling medium, such as a refrigerant, is circulated in the cooling plate 216 to form a cooling medium path. As shown in Fig. 8, a lower electrode 214 is formed on the lower surface, and has a tubular groove 2 15 to receive the upper half of the cooling tube 203. The tubular groove 2 15 has a semicircular or rectangular cross section. Similarly, the cooling plate 216 is formed at the upper surface contacting the lower surface of the lower electrode 2 15 and has a tubular groove 2 17 to receive the lower half of the cooling pipe 230. The tubular groove 2 17 is semi-circular or rectangular in cross section. As shown in Fig. 9, the cooling tube 203 includes a pair of transverse tube members spaced apart from each other by a predetermined distance, and a plurality of longitudinal tube members disposed between the ends of the transverse tube members And uniformly spaced apart from each other and extending between the transverse tubular members along the transverse tubular members. The cooling tube 230 also includes an inlet tube member coupled to a central portion of a transverse tube member and an outlet tube member coupled to a central portion of the other of the transverse tube members. Each of the longitudinal tubular members is joined, for example, by welding at both ends thereof, and is sealably coupled to the individual transverse tubular members. The cooling tube 203 is in direct contact with the lower electrode 2 14 and the cooling plate 2 16 . Therefore, the lower electrode 2 14 is not directly cooled by the cooling plate 2 16 , but is directly cooled by the cooling pipe 230 , and the cooling pipe 203 is in direct contact with the lower electrode 2 14 . The cooling tube 203 has a plurality of shapes and is not limited to the illustrated embodiment. Therefore, as shown in Figs. 8 and 9, the electrode 2 1 4 of the electrode unit included in the electrode processing apparatus according to the second embodiment of the present invention is 18

1314842 cooling is achieved by circulating a cooling medium in a cooling tube 203 placed between the lower electrode 214 and the cooling 2 16 , wherein the lowering unit 21 is loaded with a substrate to be processed . The cooling medium is injected into the cooling tube 230 via an inlet tube member that is coupled to the transverse tube member and flows in a branched manner through a longitudinal tube extending perpendicular to the transverse tube member. In the following, the flow of cooling medium flowing out of the longitudinal tubular members will inject another lateral member' The resulting cooling material exits the cooling tube 203 via the outlet tube member. Depending on the circulation of the cooling mass within the cooling tube 230, the lower electrode 214 can avoid a rise in temperature and thus can be maintained at a desired temperature. According to this embodiment, the tubular grooves 2 15 and 2 17 should be formed in the contact faces of the lower electrode 2 1 4 and the plate 2 16 , respectively. The cooling tube 203 is embedded between the tubular grooves 2 1 5 and 2 17 , so that the outer surface of the cooling tube 203 is in contact with the equal grooves 2 15 and 271. Therefore, the contact area between the lower electrode 2 14 and the cooling 2 16 should be increased, thereby increasing the heat transfer rate between the lower electrode 2 14 and the cooling plate 2 16 flowing through the cooling tube 2 30 . . Therefore, the heat balance between the lower electrode 2 1 4 and the cooling plate 2 16 is achieved relatively quickly, so that an optimum cooling efficiency can be achieved. As can be seen from the above description, according to the second embodiment of the present invention, heat is generated between the lower electrode 2 14 and the cooling plate 2 16 via the cooling pipe 2 3 0 , and the cooling pipe 2 3 0 is compared. The high and low portions will make direct contact with the power-off 2 1 4 and the cooling plate 2 16 respectively. Therefore, the heat balance between the lower electrode 2 1 4 and the cooling plate 2 16 can be quickly achieved. Therefore, the plate is extremely immersed in the medium 1 cold groove tube plate, which can be used to make the electrode.

1314842 achieves the best cooling efficiency. <Third Embodiment> Referring to Fig. 10, there is shown a plasma processing apparatus according to a third embodiment of the present invention. Although not shown in FIG. 10, the plasma processing apparatus includes a processing chamber, an upper electrode disposed at a higher portion of the processing chamber to inject a desired gas into the processing chamber, and an electrode unit. The lower portion of the processing chamber is disposed such that the substrate to which the electrode unit faces the upper electrode should be loaded on the electrode unit. Electrical energy is applied to the electrical unit. As shown in FIG. 10, the electrode unit includes a susceptor 320. The electrode unit includes an insulator 318, a cooling plate 316, and a lower electrode 3 1 4 , which are sequentially formed in a sheet shape on the base. A plurality of insulating members 2 2 2 should be mounted on the electrode unit, so that the insulating plates 2 2 2 will surround the peripheral surface of the electrode unit and the surrounding portion of the top surface of the electrode unit to prevent the electrode unit from being protected from electricity. Slurry damage. Since the structure of the above-mentioned electrode sheet is the same as that of the above-mentioned conventional use, and has the same function as the conventional one, it will not be described again. As shown in Fig. 1, the plate-like structure of the cooling plate 3 16 has a predetermined thickness. A plurality of recesses having a predetermined depth are formed in the cooling 3 16 such that each of the recesses extends between the longer opposite sides of the cooling plate 3 16 to define a plurality of cooling medium passages 3 1 7 . Each of the dimples has an enlarged portion on its opposite side to form an inlet and an outlet for the associated ones of the cooling medium passages 3. The preparation of the pole plate around the 5 yuan phase plate extension 20 17

1314842 A vortex formation preventing member 3 2 4 is provided at the inlet of each of the cooling medium passages 3 1 7 to prevent the cooling medium from forming a vortex when the cooling medium is injected into the cooling medium passage 3 17 via the inlet. When the cooling medium forms the prevention member 3 2 4 through the vortex, it changes to a turbulent flow to form a pressure gradient. Therefore, the flow rate of the cooling medium is increased, thereby achieving an increase in cooling efficiency. The vortex formation preventing member 324 has a mesh structure. The vortex formation preventing member 324 delays the flow of the cooling medium into the associated cooling medium passage 31, whereby the cooling medium flows through the cooling medium passage 317 in a uniform distribution. Although not shown, a plurality of connecting pipes are respectively connected to the inlets and outlets of the respective cooling medium passages 31 to supply the cooling medium from the outside of the plasma processing apparatus to the cooling medium passages 3 1 7 and The cooling medium is then released from the cooling medium passage 31. The cross-sectional shapes of the connecting tubes respectively conform to the cross-sectional shape of the inlet and the outlet. The cross-sectional shapes of the connecting tubes are rectangular. In this case, the cross-sectional areas of the connecting pipes are large compared to the connecting pipes having a circular cross-sectional shape. Therefore, in this case, the flow rate of the cooling medium is increased, thereby achieving an increase in cooling efficiency. A conduit 317a is disposed in a central region of each of the cooling medium passages 317 such that the conduits 317a extend parallel to the cooling medium passages 317. The conduit 31 7a directs the cooling medium into the cooling medium passage 317 and is maintained at the desired linear flow rate. Since each of the cooling medium passages 317 has a rectangular sectional shape, the area of the cooling medium flowing into the cooling medium passages 3 1 7 is large, thereby achieving 21

1314842 Increased cooling efficiency. Each of the cooling medium passages 31 has many shapes, and is not limited to the illustrated embodiment as long as the sectional area of the cooling medium passages 31 17 can be increased. A plurality of sealing members are disposed between the lower surface of the lower electrode 3 1 4 on the opposite sides of the respective cooling medium passages 3 1 7 and the upper surface of the cooling plate 316 to provide a sealing effect. Therefore, the cooling of the lower electrode 314 in the electrode unit of the plasma processing apparatus according to the third embodiment of the present invention is achieved by circulating the cooling medium in the cooling medium passages 317, wherein A substrate is loaded on the lower electrode 314, and the cooling medium passage 317 is defined by a plurality of recesses formed in the cooling plate 316 on the upper surface of the cooling plate 316 that is in contact with the lower surface of the lower electrode 314. As shown in Figures 10 and 11. Each of the cooling medium passages 317 has a rectangular shape, so that the cooling medium passages 317 have a large sectional area. Therefore, the area of the cooling medium flowing in the cooling medium passage 3 17 is large, so that the cooling efficiency can be improved. The cooling medium supplied in the liquid or gaseous state and supplied from the outside of the plasma processing apparatus should be injected into the processing chamber (not shown) via the connecting tubes respectively connected to the inlets of the cooling medium passages 317 Cooling medium channel 3 1 7 in. The cooling medium becomes turbulent when the prevention member 3 2 4 is formed by the vortex without forming a vortex, and the vortex formation preventing member 3 2 4 is provided at a plurality of inlets of the cooling medium passage 317. When the cooling medium becomes turbulent, a pressure gradient is generated in the cooling medium. Therefore, the flow rate of the cooling medium is increased. When the cooling medium 22

1314842 When the increased flow rate passes through the cooling medium passage 3 1 7 , the cold reaches the outlet of the cooling medium passages 31 17 . Then, the cold is released from the cooling medium passages 317, and then, the inlets respectively connected to the cooling medium passages 317 are simultaneously passed through the vortex formation prevention members disposed at the outlets, and the cooling medium passes through the outlet side. The vortex formation prevention member 3 2 4 releases the cooling medium at an increased rate. Although not shown, it is connected to the connecting tubes. Since the duct 317a is disposed in each of the cooling medium passages 317, the duct 317 is directed parallel to the cooling medium passage 31 to guide the cooling medium through the cooling medium passage 317 with a linear flow rate. Contacting the lower surface of the lower electrode 3 1 4 to cool the lower electrode 3 plate 3 1 6 is cooled by circulating in the cooling medium passages 3 1 7 , the cooling medium passages 317 being defined at the 8 In the upper surface. In particular, since each of the channels 3 17 of the cooling plate 3 16 has an increased cross-sectional area, a larger medium can be circulated. Therefore, the heat balance between the lower electrode 314 and the cold can be quickly achieved. Therefore, optimum cooling efficiency can be achieved. That is, according to the third embodiment of the present invention, a large-diameter cooling medium passage 317 is formed on the contact surface with the lower electrode 314 to produce the cooling plate 3 16 to increase the cooling of the cooling plate 3 16 The flow rate of the medium, and increasing the circulation speed of the cooling medium, can achieve an increase in cooling performance. However, the medium will be treated by the medium, and the connecting pipe, 324 °, can be extended by the central zone 7 of the pump, maintaining the cooling cooling of the period of 14 to 3 3 6 cooling of the cooling medium - The circulation rate of the raw contact of the surface area of the plate 3 1 6 . Therefore, 23

1314842 <Fourth Embodiment> Referring to Figure 12, a processing apparatus according to a fourth embodiment of the present invention is illustrated. Although not shown in FIG. 2, the plasma processing is provided with a processing chamber, an upper electrode disposed at a higher portion of the processing chamber to inject a desired gas into the processing chamber, and an electrode unit The lower portion of the chamber, such that the electrode unit faces the electrically treated substrate to be loaded to the electrode unit. Electrical energy is applied to the element. As shown in FIG. 12, the electrode unit includes a base 420. The unit includes an insulator 318, a cooling plate 316, and a lower electric power, which are sequentially formed in a sheet shape on the base. A plurality of insulating plates are mounted on the electrode unit, so that the insulating plates 42 2 surround the peripheral surface of the unit and the surrounding portion of the top surface of the electrode unit, thereby preventing the electrode unit from being damaged by the plasma. Since the electrode unit described above is the same as the above-mentioned conventional one, and has the same function as the conventional one, it will not be described again. As shown in Figures 12 and 13, the cooling plate 416 has a predetermined thickness. A plurality of cooling medium passages 4 1 7 are formed in the plates 416 such that each of the cooling medium passages 417 extends between the surfaces of the longer opposite sides of the cold. The cross-sectional shape of each of the cooling medium passages 4. An inlet and an outlet are formed at opposite ends of the respective channels 417, respectively. Although not shown, a plurality of connecting tubes are respectively connected to each of the cooled plasma preparation units to be placed at the pole. The electrode is the electrode & 3 14, 42 2 should be the structure of the electrode to avoid the same function of the plate. The cooling plate 4 1 6 17 has a cooling medium.

1314842 The inlet and outlet of the passage 41 are supplied to the cooling medium passage 417 from the outside of the plasma processing apparatus, and then the cooling medium is released from the cooling medium passage 417. The connecting tubes have cross-sectional shapes that correspond to the inlet and the outlet, respectively. The connecting tubes have a rectangular cross-sectional shape. In this case, the cross-sectional area of the connecting tubes is large compared to a connecting tube having a circular cross-sectional shape. Therefore, in this state, the flow rate of the cooling medium is increased, thereby achieving an increase in cooling efficiency. Since each of the cooling medium passages 411 has a rectangular sectional shape, as shown in Figs. 12 and 13, the area of the cooling medium flowing in the cooling medium passages 417 is large, thereby achieving an increase in cooling efficiency. Each of the cooling medium passages 31 has many shapes, and is not limited to the illustrated embodiment as long as the sectional area of the cooling medium passages 31 17 can be increased. Between the upper surface of the cooling plate 416 (which is formed using the cooling medium passages 417) and the lower surface of the lower electrode 414 (which is disposed on the cooling plate 416), that is, the cooling plate 4 16 On the contact surface of the lower electrode 4 14 , a narrow groove is inevitably formed due to the bolt coupling structure of the cooling plate 4 16 and the lower electrode 4 14 . Since the rills cause deterioration in heat transfer efficiency, it is necessary to fill the rills with a heat transfer medium having a high thermal conductivity. Therefore, rectangular sealing grooves are formed in the upper surface of the cooling plate 416 and the lower surface of the lower electrode 414, respectively, around the respective cooling medium passages 417. A sealing member 内 is embedded between the sealing grooves associated with the respective cooling medium passages 4 17 to define a sealed space G in the rill. A heat transfer medium having excellent thermal conductivity is filled in each sealing member.

1314842 sealed space G. The heat transfer medium is in a liquid or gaseous state. For a heat transfer medium having a liquid state, a mixture of anti-cooling solvents such as low specific heat ethylene glycol and deionized water mixed with an appropriate ratio, or HT-200 may be used. For a heat transfer medium having a gaseous state, an inert gas such as helium gas can be used. Since the heat transfer medium has excellent thermal conductivity, heat transfer of the cooling medium can be enhanced. Therefore, the cooling efficiency of the cooling plate 4 16 in the cooling medium can be increased. Therefore, the cooling of the lower electrode 412 in the electrode unit of the plasma processing apparatus according to the fourth embodiment of the present invention is achieved by the circulation of the cooling medium in the rectangular cooling medium passage 411. The rectangular cooling medium passage 417 is formed in the cooling plate 416 contacting the lower surface of the lower electrode 414, so that each cooling passage 417 extends between the longer opposite surfaces of the cooling plate 416, wherein the substrate is loaded on Above the lower electrode 414, as shown in Figures 12 and 13. Because there is a narrow groove between the contact surface of the lower electrode 412 and the cooling plate 416, which is caused by the bolts of the surrounding portions of the cooling plate 416 and the lower electrode 412, Therefore, deterioration of heat transfer efficiency as described above occurs. Therefore, the sealing members should be filled in the narrow groove to define a sealed space G in the narrow groove, and a heat transfer medium such as helium or ethylene glycol and deionized water is filled in the sealed space G. mixture. Therefore, the cooling efficiency of the cooling medium can be improved, and thus deterioration of heat transfer efficiency can be avoided. Cooling with liquid or gaseous state and supplied by the outside of the plasma processing equipment 26

The 1314842 medium should be injected into the cooling medium passage 417 via connecting pipes respectively connected to the cooling medium passages 4 1 7 and then exit through the outlets of the cooling medium passages 417 through the cooling medium passages. Since the thermal conductivity of the cooling medium is increased by the heat transfer medium during the cold cycle, the cooling efficiency of the lower electrode 414 contacting the cooling plate 416 can be increased. From the cooling medium channels, the cooling medium is released from the processing chamber via the connecting tubes. Although a pump should be connected to the connecting tubes. Since the heat transfer medium having excellent thermal conductivity is filled in the seal, the sealed space G is defined by the sealing member 0 in the narrow groove between the contact faces of the poles 4 1 4 and the cooling plates 4 16 , As described above, the cooling heat transfer property of the cooling medium passages 4 1 7 flowing through the cooling plate 4 16 is increased by the heat transfer medium. Therefore, the cooling effect can be attained as compared with the 4 1 4 which achieves cooling only through the circulation of the cooling medium. <Fifth Embodiment> Referring to Figs. 14a and 14b, a plasma processing apparatus according to an embodiment of the present invention is illustrated. Although not shown in FIG. 14A and the figure, the plasma processing apparatus includes a processing chamber, an upper electrode, and a higher portion of the processing chamber to inject a desired gas into the processing unit, the setting thereof At the lower portion of the processing chamber, the unit will face the upper electrode. The substrate to be treated should be loaded to this unit. Electrical energy is applied to the electrode unit. Because the plasma processing is provided by the 417 to release the upper surface 417 of the medium, the space is not shown. The lower fourth electrode 14b of the lowering electrode of the qualitative conductivity is disposed in the chamber, and the electrode Electrode single preparation on the upper 27

The configuration of 1314842 is the same as that of the above-mentioned conventional situation, and has the same function, so it will not be described again. The electrode holder is as shown in Figures 14a and 14b. The electrode unit includes an insulator, and a temperature regulating plate 5 pole 5 2 7 is formed in a sheet shape in order, and the base plate 4 2 2 should be mounted on the electrode unit, so that the circumference of the electrode unit is completely wrapped around the electrode unit. The surface and one part of the electrode unit are 俾 to avoid the electrode unit from being damaged by the plasma. The temperature regulating plate 5 16 should be coupled to the lower electrode 5 2 7 of the warming plate 5 1 6 for cooling or heating the lower electrode 5 2 7 pole 5 2 7 can be maintained at a preset temperature. The plate 516 as shown in Fig. 16 is formed by sintering ceramic powder. A medium circulation line 5 1 6 a is formed in the temperature regulating plate 5 16 at the sintering place. In order to form the medium circulation in the temperature regulating plate 5 16 , a scale having the same shape as the medium circulation line 5 1 6 a is formed as shown in Fig. 15. The linear parison 5 17 will be in the appropriate (not shown). In this state, the primary and secondary firings are performed in the mold and according to the high temperature conditions. At the time of the sintering treatment, it has a linearization of a low melting point and thus disappears from its position. As a result, the medium circulation line 5 1 6 a which is the same as the line shape is formed in the sintering, that is, formed in the temperature regulating plate 5 16 .

The primary sintering treatment is carried out at a temperature of 1,0 0 °C to 1 °, and the secondary sintering treatment is carried out at 1,700 ° C. The unit with the conventional condition includes a base of 16, and a power on. A plurality of insulating edge plates 422 will ring the lower surface of the peripheral portion of the page. The adjustment, and thus the power-off is not the same as the temperature adjustment, the L-shaped parison 5 1 7 will be formed on the line 5 1 6 a. , placed in a mold filled ceramic powder, the knot treatment, into the shape of the parison 5 17 will melt the parison 5 1 7 in the ceramic body, the sintering sintering temperature of 200 ° C. 28

1314842 According to the primary and secondary sintering treatments, the temperature regulating plate 516 should have desirable physical properties such as high hardness and high resistance. The linear parison 51 17 is made of a material having a melting point lower than the sintering temperature of the primary and secondary sintering treatments. For example, the linear pattern 51 is made of synthetic resin or copper, and the melting point of copper is lower than the melting point of ceramic. For reference, the melting point of copper is 1,0 8 3 °C. Of course, the linear parison 51 17 may be made of a material other than synthetic resin or copper as long as the material has a melting point lower than that of the ceramic. The linear pattern 51 has a rod-like structure or a tubular structure. When the linear parison 51 17 has a rod-like structure, it must be melted during the sintering process for forming the temperature regulating plate 5 16 to form the medium circulation line 5 1 6 a. However, when the linear parison 51 has a tubular structure, the infusible medium circulation line 516a may be formed because it has an inner space through which the heat transfer medium can pass. The linear parison 51 17 has opposite ends forming an inlet and an outlet of the medium circulation line 5 16 a. The linear parison 51 17 has a plurality of U-shaped portions disposed between opposite ends of the linear parison 51. Each of the U-shaped portions of the linear parison 51 17 has rounded corners to prevent the rate at which the heat transfer medium flows in the medium circulation line 5 16a from being lowered at the rounded corners. Wherein the formation of the medium circulation line 5 1 6 a uses a drill, as in the conventional case, which inevitably has a sharp angle, and causes the flow rate of the heat transfer medium in the medium circulation line 5 1 6 a. The reduction. As shown in FIG. 14 , FIG. 15 and FIG. 16 , according to the fifth embodiment of the present invention, the medium circulation line 5 1 6 a of the temperature regulating plate 5 16 is formed by using one. Ceramic sintering is done without the use of a drill. That is, 29

1314842 The preparation of this type of field 5 17 is made of synthetic resin or copper (the sintering temperature of the material of the plate 516). The parison is in a ceramic powder in a mold. The temperature regulating plate 5 16 is formed by sintering in such a state. It is melted in the sintering process, and the parison 5 in the temperature regulating plate 5 16 is the next space. This space forms the medium circulation line 5 1 . Referring to Figure 17, a method of manufacturing a temperature regulating plate according to the present plasma processing apparatus is illustrated. The manufacturing S200 is: preparing a dielectric circulation line 3, filling a mold with ceramic powder, and embedding the parison in the ceramic powder; step S 2 2 0 is, initially sintering the ceramic ceramic body; Step S 2 3 0 is, secondly, the sintering step S 2 4 0 is, according to the melting of the fan caused by the primary and secondary sintering steps, and in the sintered ceramic body center line; and the step S 2 50 is A temperature regulating plate is obtained by separating and sintering the mold, and then the medium circulation line is formed. In the step S 200, a synthetic resin billet 517 is prepared, which has a melting point lower than that of the primary and secondary sintering steps. The parison 51 is prepared by molding a suitable structure, or by bending a copper rod into a linear parison 51. The rod has a rod-like structure or a tubular parison. When it is melted during the formation of the conditioning process to form the medium circulation line 5 1 6 £-like parison 5 17 having a tubular structure, the formation of an infusible melting point lower than the temperature adjustment 5 1 7 will be buried in the filling, When the ceramic powder is advanced, the position of the parison 5 17 17 is left at 6 a. The method of the fifth embodiment includes: step 2 blank; step S 2 1 0 ceramic powder in the mold to form sintering The ceramic body of the junction; the ceramic body formed by the medium circulation in steps S220 and S230, by the structure of the synthetic resin of the type S220 and S230 formed by copper or the mold. structure. When the linear temperature plate 5 16 is sintered i. However, when the lined medium is circulated 30

1314842 516a, because it has an internal space, and the heat transfer medium can pass therethrough. In step S 2 1 0, the ceramic powder is filled in the mold for forming the temperature regulating plate 5 16 . At the filling process, the parison 51 is buried in the ceramic powder in the mold. In the primary sintering step S 2 2 0, the ceramic powder filled in the mold will be at 1,0 0 0. C to 1, 2 0 0. Sintering is performed in the primary sintering temperature of C, thereby forming a sintered ceramic body. In the secondary sintering step S230, the sintered ceramic body is sintered at a secondary sintering temperature of 1,700 〇C. Thus, the sintering of the sintered ceramic body is completed because the ceramic has about 1,200. The melting point of C. According to the secondary sintering, the sintered ceramic body has improved physical properties in terms of hardness and tolerability, which is required for the temperature regulating plate 51. At the step S 2 40, the medium circulation line is formed in the sintered ceramic body according to the melting of the parison caused by the primary and secondary sintering steps S 2 2 0 and S 2 3 0 because the parison The melting point is lower than ceramic. When the parison is melted, a space is left at the position of the parison in the sintered ceramic body. This space forms the medium circulation line. - In step S 2 50, the sintered ceramic body is separated by the mold. Therefore, the temperature regulating plate 5 1 6 can be obtained in which the medium circulation line 5 1 6 a is formed. <Sixth Embodiment> Referring to Fig. 18, there is shown a plasma processing apparatus according to a sixth embodiment of the present invention. The plasma processing apparatus includes an upper electrode assembly including an upper electrode plate 612, a lower electrode, a priming head 62 2, and a cooler, the 31 1314842 lance 6 2 2 contacting the upper electrode The lower surface of the plate 6 1 2 . The lower electrode has a structure according to one of the first to fifth embodiments of the present invention. The effusion head 622 has a plurality of outlets 624 for supplying process gases to the substrate to be treated. The outlets 6 2 4 should be aligned with a plurality of outlets which are respectively disposed on the upper electrode plate 6 21 . Since the venting head 6 2 2 is disposed at a position directly exposed to the plasma, the temperature of the venting head 6 22 rises, which is undesirable. Therefore, a refrigerant passage 633 is formed in the air shower head 622 to guide a refrigerant through the air shower head 622, and therefore, the air shower head 62 2 can be cooled. The refrigerant passage 633 is connected at one end thereof to a refrigerant source (not shown), which is disposed inside the plasma processing apparatus via a refrigerant injection line 63 2 extending in the upper electrode plate 612 The outside of the chamber. The refrigerant passage 633 is also connected at its other end to a refrigerant discharge line 523 which extends in the upper electrode plate 621. Therefore, the refrigerant is injected into the refrigerant passage 633 via the refrigerant injection line 63 2 and then after the cooling head 6 2 2 is cooled by the refrigerant passage 633, that is, via the refrigerant release line. 6 3 3 and leave the refrigerant passage 6 3 1. The refrigerant circulates in the chiller and a circulation system. As shown in Fig. 18, the upper electrode assembly includes an upper support member 620 in addition to the upper electrode plate 6 2 1 . The upper electrode plate 621 is attached to the lower surface of the upper support member 620. The air shower head 622 is also included in the upper electrode assembly. The air shower head is mounted on the lower surface of the upper electrode plate 6 2 1 . The upper electrode assembly further includes a side support member 62 7 that is disposed around the air shower head 622 to support the air shower head 622. The upper support member 620 has a processing gas passage for supplying a 32

1314842

Process the gas. The upper support member 620 is also provided with a plurality of perforations 620a and 620b, which are respectively formed in the refrigerant injection line, and the portion through which the 2 and the refrigerant release line 6 3 3 pass The refrigerant is injected to allow the refrigerant to be injected into the bucket, and the refrigerant green 632 and the refrigerant discharge line 633 are extended in the upper member 620. ^ I 4 and other perforations 620a and 620b have diameters larger than the side refrigerating lines 632 and 633, and ... M. t 俾 to prevent the refrigerant injection line 632 and the refrigerant release line 633 from coming into contact with the upper branch member 620 . Therefore, it is possible to suppress exchange of heat between the refrigerant injection line 6 632 and the refrigerant discharge line 633 and the upper support member 620. The upper electrode plate 6 2 1 contacting the lower surface of the upper support member 620 is grounded so as to be capable of generating a differential potential between the lower electrode and the upper electrode plate 62. A radio frequency (RF) voltage from an RF voltage source should be applied to the upper electrode plate 6 2 分离 separately from the lower electrode via an impedance matching unit. The upper electrode plate 621 has a process gas supply passage 623 and a plurality of process gas outlets. The upper electrode plate 621 also has a plurality of refrigerant passages 635 and 636' which are branched and connected to the 5H refrigerant injection line 632 and the refrigerant discharge line 633 to allow the refrigerant to flow in the upper electrode plate 621. The outlet 6 2 of the venting head 6 2 2 should be aligned with the processing gas outlet of the lower electrode plate 6 2 俾 , respectively, to supply the processing gas toward the substrate loaded on the lower electrode. The refrigerant passage 633 formed in the air shower head 622 should guide the refrigerant through the air shower head 62 2 . As described above, the refrigerant passage 633 passes through the refrigerant injection line 633 and the refrigerant passage 635 (which extend in the upper support member 620 and the upper electrode plate 621, respectively), and is connected to the end at one end thereof. A refrigerant source (not shown) is disposed outside the chamber defined in the inside of the plasma processing apparatus. The refrigerant passage 63 1 is connected at the other end thereof.

1314842 is extended in the refrigerant release line 633 and the refrigerant passage 636, respectively, in the upper support member 620 and the upper electrode plate 612. The refrigerant injection line 633 and the refrigerant discharge line 633 are respectively away from the perforations 620a and 620b of the upper support member 620, so that the lines 632 and 633 are not in contact with the upper support member 620. The lines 632 and 633 define a plurality of refrigerant passages 6 3 2 a and 6 3 3 a which are respectively aligned with the refrigerant passages 635 and 636 of the upper electrode plate 621. The wires 632 and 633 are sealably coupled to the upper electrode plate 621 using a vacuum pad or an annulus (water ring) 634 and 633. The perforations 620a and 620b are not limited to a particular size as long as a narrow groove is determined between each of the perforations 620a and 62b and the associated one of the lines 632 and 633 to avoid heat transfer therebetween. Just fine. Also, each of the perforations 620a and 620b preferably has the same cross-sectional shape as the associated one of the lines 632 and 633. The cross-sectional shape of each of the perforations 620a or 620b is not limited to a special shape as long as the relevant line 6 3 2 or 63 3 can extend through the perforations 620a or 62 Ob without coming into contact with the perforations 620a or 62 Ob. An insulating material should be filled in each of the perforations 6 2 0 a and 6 2 0 b, which is located around the associated line 6 3 2 or 6 3 3 . For insulating materials, insulating polymers, insulating rubber or insulating ceramics can be used. Of course, materials can also be used as long as they have insulating properties. Since the refrigerant injection line 633 and the refrigerant release line 633 do not come into contact with the upper support member 620, as described above, heat energy is inhibited from each of the lines 632 and 633 and the upper support member 620. The exchange is performed, and thus the shower head 622 can be effectively cooled. 34

1314842 As shown in Fig. 19a or 1 9b, the outlet 6 2 4 supplying the process gas toward the substrate should be evenly distributed over the entire area of the shower head 62 2 . Also, the refrigerant passage 631 should extend through the air shower head 622 around the outlets 624. Therefore, the refrigerant injected into the air shower head 62 2 via a refrigerant inlet 631a cools the air shower head 62 2 when flowing through the air shower head 62 2 . Then, the refrigerant should be released from the air shower head 6 22 via a refrigerant outlet 6 3 1 b. The refrigerant inlet 63 1 a should be connected to the refrigerant injection line 632 which extends between the shower head 622 and the upper electrode plate 621. On the other hand, the refrigerant outlet 633b should be connected to the refrigerant discharge line 633, which extends between the lance 622 and the upper electrode plate 621. The refrigerant passage 631 has a single passage structure as shown in Fig. 19a. Alternatively, the refrigerant passage 633 has a plurality of divided passage structures. In the latter case, the refrigerant passage 633 has a two-divided passage structure that extends in almost half of the portion of the shower head 622, respectively. In such a case, the portions of the refrigerant inlet 6 3 1 a and the refrigerant outlet 6 3 1 b of each channel structure in the refrigerant passage 633 can be appropriately adjusted. In the illustrated condition, the refrigerant should be injected into the shower head 62 by the surrounding area of the shower head 62, and the shower head 622 is released via the central region of the shower head 62. However, the flow of the refrigerant in the shower head 622 may flow in the opposite direction to the condition of the drawing, so that the refrigerant should be injected into the air shower head 62 2 via the central region of the air shower head 62 2 and The perfusion head 6 2 2 is released by the surrounding area of the vent head 6 2 2 . Further, the existence of the refrigerant flow has a plurality of forms, and is not limited to the above. Similarly, the gas stream also has multiple forms. When the refrigerant passage 633 has a plurality of divided passage structures, a plurality of perforations 35 1314842 are formed in the upper support member 620, and thus are respectively connected to the mouth of the divided passage structure of the refrigerant passage 633 Although the upper electrode assembly has been described as including the upper electrode assembly, the upper electrode plate 621 is attached to the lower shower head 622 of the upper support member 620, and is disposed on the lower electrode of the upper electrode plate 621. The assembly further includes an insulating mat disposed between the powering and the upper support member 602. The insulating mat should partially cover the panel 621 and the upper support member 62' or should completely cover the upper and upper support members 620. Also, the insulating mat may have a sheet in a state in which the insulating mat is embedded between the upper electrode plate 621 and the swing member 620. Alternatively, the insulating mat may have a thin coating in the case of the sample - the insulating mat may be coated on the upper electrode surface or on the lower surface of the upper support member 62. Of course, it should be filled in the perforations 620a and 620b of the upper support frame 620. The insulating crucible is made of an insulating polymer or an insulating rubber. Of course, other materials can be used as long as they are of a quality. When the insulating crucible is placed between the upper electrode plate 622 and the upper electrode, the heat of the air shower head 622 can be more effectively suppressed from being transmitted by the member 620. According to a first aspect of the present invention, there is provided a plasma processing apparatus for a substrate of a region, wherein a plurality of refrigerants circulate the perforated inlets and the outlets 60 2 , the surface, and the faces, but the plates 6 2 1 The upper electrode plate has a structure of 6 2 1 . In the structure with the upper membrane. In the upper 'insulation material of 621, as above' or ceramic has insulating member 62 0. The upper support - large passage should be shaped 36

1314842 is formed in an electrode. In such a situation, the refrigerant path defined by each refrigerant circulation passage is shortened, compared to the conventional situation. Therefore, it is advantageous in that the temperature difference of the refrigerant between the refrigerant inlet and the refrigerant outlet is reduced. When the refrigerant inlet and the refrigerant outlet of each refrigerant circulation passage are disposed to be opposite to the related parties of the refrigerant circulation passage, the temperature difference occurring between the refrigerant inlet and the refrigerant outlet can be compensated, and therefore, the entire portion of the electrode can be made The portion is maintained at the desired temperature. Since the entire portion of the electrode should be maintained at a desired temperature, the problem caused in the process of processing a large substrate can be solved, that is, the process productivity due to the temperature difference is lowered. According to a second aspect of the present invention, there is provided a plasma processing apparatus, wherein a cooling tube is interposed between a contact surface of a lower electrode and a cooling plate, the cooling plate being included in a lower portion of the plasma processing apparatus In some of the electrode units, the crucible is such that a cooling medium circulates in the cooling tube. Since the cooling of the lower electrode is such that the cooling tube directly contacts the lower electrode, a better heat transfer rate can be obtained as compared with the lower electrode which is indirectly cooled by the cooling plate. Therefore, the heat balance between the lower electrode and the cooling plate can be achieved. Thus, the optimum cooling efficiency of the lower electrode is achieved. Further, the completion of the placement of the cooling tube is achieved by forming a groove in the contact surface between the lower electrode and the cooling plate. Therefore, the placement of the cooling tube can be easily achieved. According to a third aspect of the present invention, there is provided a plasma processing apparatus in which a plurality of cavities are formed in a cooling plate, the cooling plate contact being included in an electrode unit a lower surface of the lower electrode, the electrode unit is disposed on the plasma 37

The 1314842 handles the lower portion of the device to form a media channel having a rectangular cross-sectional shape. Since the cooling medium passages have a rectangular cross-sectional shape, the flow rate of the cooling medium flowing in the cooling medium passages is improved, and the vortex formation preventing members are respectively disposed at the inlet end of the cooling plate. Due to the utility of the vortex forming preventive member, the cooling medium can be circulated at an increase rate. Therefore, the cooling of the lower electrode can be promoted because the formation of the cooling medium passages can be easily and economically achieved by forming the cavities in the cooling plate. According to a fourth aspect of the present invention, there is provided a plasma treatment wherein a plurality of cooling medium passages are formed in a cooling plate, the cold contact comprising a lower surface of a lower electrode in an electrode unit, the electrode being disposed on a lower portion of the plasma processing apparatus, such that each cooling medium extends between the longer opposite side surfaces of the cooling plate to circulate a medium in the cooling medium passages, and thus Electricity. Considering that there is a groove between the contact surface of the lower electrode and the cooling plate, which is caused by the coupling structure of the cooling plate and the lower electrode, a plurality of dense members are embedded in the narrow groove, and the sealed space in the narrow groove is defined . A heat transfer medium in or gaseous state is filled in the sealed space. Therefore, in addition to the cooling effect obtained by the cooling medium, the cooling efficiency of the lower electrode can be promoted by the heat transfer performed by the heat transfer. According to a fifth aspect of the present invention, there is provided a plasma processing apparatus comprising a temperature regulating plate formed by a dielectric circulation line. The medium is cooled, so it rises. And to increase: rate. The surface quality is complete, but the plate unit channel cools the extremely cold fine encapsulation liquid. The medium is prepared by using a sintering procedure instead of using a drill gun on the four sides of the temperature regulation plate. Drilling the temperature regulating plate, or using the method, the medium circulation line is formed in one of the temperature regulating plate and an upper plate, and the upper plate is sealed and bonded to the upper plate at the temperature regulating plate. Previously, it was placed on top of the temperature regulating plate. That is, a parison is prepared from a material having a low melting point. The parison is buried in a ceramic powder filled in a mold. In such a case, the ceramic powder should be sintered to form the temperature regulating plate. In the primary and secondary sintering processes, the parison will melt, leaving a space in the position of the parison in the temperature regulating plate. This space forms the medium circulation line. Therefore, the medium circulation line can be easily formed in the temperature regulating plate. According to a sixth aspect of the present invention, there is provided a plasma processing apparatus configured to effectively suppress thermal energy in a refrigerant passage formed in a lower electrode plate and an upper support member adapted to support the high processing electrode Exchange between boards). The refrigerant passage is formed not to come into contact with the upper support member. Therefore, heat exchange between the refrigerant passage and the upper support member is suppressed to more effectively cool a shower head which is included in the plasma processing apparatus. Also, the temperature reduction of the upper support member can be avoided and the temperature reduction of the chamber defined in the plasma processing apparatus can be avoided. Although the description of the preferred embodiments of the present invention has been described herein, it will be understood by those skilled in the art that, without departing from the scope and spirit of the invention as disclosed in the appended claims Improvements, additions and substitutions of the items are also feasible. 39

BRIEF DESCRIPTION OF THE DRAWINGS [0012] The above objects, and other features and advantages of the present invention will become more apparent after the study of the accompanying drawings, which are illustrated in the accompanying drawings in which: FIG. 2 is a perspective view showing a lower electrode included in a conventional plasma processing apparatus, and a refrigerant circulation passage formed in the lower electrode; FIG. 3 is a cross-sectional view showing the first embodiment according to the present invention Example of a plasma processing apparatus; FIG. 4 is a cross-sectional view showing an example of setting a refrigerant circulation passage according to a first embodiment of the present invention; and FIG. 5 is a cross-sectional view showing a first embodiment of the present invention. Another example of the arrangement of the refrigerant circulation passage; FIG. 6 is a cross-sectional view showing still another example of the arrangement of the refrigerant circulation passage according to the first embodiment of the present invention; Still another example of the arrangement of the refrigerant circulation passage of the first embodiment of the invention; FIG. 8 is a cross-sectional view showing a portion of the plasma processing apparatus according to the second embodiment of the present invention; Show A cooling tube of a plasma processing apparatus according to a second embodiment of the present invention; a cross-sectional view of FIG. 10 illustrates a portion of a plasma processing apparatus according to a third embodiment of the present invention; A cooling tube included in a plasma processing apparatus according to a third embodiment of the present invention;

1314842 FIG. 12 is a cross-sectional view showing a portion of a plasma processing apparatus according to a fourth embodiment of the present invention; and FIG. 13 is a schematic plan view showing a plasma processing apparatus included in a fourth embodiment according to the present invention. The cooling tube; the exploded perspective view of the first embodiment shows the electrode unit of the plasma processing apparatus according to the fifth embodiment of the present invention; the cross-sectional view of the 14th diagram shows the electrode unit of the 14th diagram; The perspective view shows a parison for forming a medium circulation line according to a fifth embodiment of the present invention; and a perspective view of Fig. 6 shows a temperature regulation plate, which is in accordance with a fifth embodiment of the present invention The medium circulation line of the example is formed together; the flowchart of FIG. 7 shows a method for forming the temperature regulating plate according to the fifth embodiment of the present invention; and FIG. 8 is a cross-sectional view showing the sixth according to the present invention. The plasma processing apparatus of the embodiment; the plan view of Fig. 19a shows a shower head and a refrigerant passage arrangement of the air shower head, the air shower head comprising the plasma processing apparatus according to the sixth embodiment of the present invention Medium; and the plan of the 1st 9b is included in the root Plasma processing apparatus of the sixth embodiment of the present invention, the gas in the shower head, the head having a first gas shower 1 9 a different refrigerant passage is provided in FIG. [Main component symbol description] 1 Plasma processing equipment 10 Upper electrode 41 1314842

12 Rinse head 14 Gas treatment funnel 16 Refrigerant circulation channel 20 Lower electrode 30 Refrigerant circulation channel 32 Refrigerant inlet 34 Refrigerant outlet 40 Exhaust unit 100 Plasma processing equipment 110 Upper electrode 112 Air head 120 Lower electrode 132 Refrigerant circulation channel 134 Refrigerant Inlet 136 Refrigerant outlet S Substrate G Sealed space 0 Sealing member 214 Lower electrode 2 15 Tubular groove 2 16 Cooling plate 217 Tubular groove 222 Insulation plate 230 Cooling tube 3 14 Lower electrode 3 16 Cooling plate 3 17 Cooling medium channel 3 17 a conduit 3 18 insulator 320 pedestal 324 vortex formation prevention member 414 lower electrode 416 cooling plate 417 cooling medium 420 pedestal 422 insulation board 5 16 temperature regulation plate 5 16 a medium ί 5 17 linear description 527 lower electrode 533 refrigerant Release line 6 12 Upper electrode plate 620 Upper support member 620a Perforation 620b Perforation 62 1 Upper electrode plate 622 Irrigation head 623 Process gas venting channel 1 Line supply channel 42 1314842 624 Outlet 627 Side support member 63 1 Refrigerant channel 632 Refrigerant injection Line 632a refrigerant passage 633 refrigerant release line 633a refrigerant passage 634 waterproof Cold coolant medium channel 635 passage 636

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Claims (1)

1314842 1' No. Patent/Monthly Revision, Patent Application Range: 1. A plasma processing apparatus for performing a preset process for a substrate using a plasma generated in a chamber. The chamber is defined in the plasma processing apparatus and maintained in a vacuum state, the apparatus comprising at least: An electrode unit comprising an upper electrode and a lower electrode respectively disposed at upper and lower portions of the chamber and adapted to apply high frequency power to the chamber; and a cooler at the upper electrode Circulating a refrigerant in the lower electrode to cool the upper electrode or the lower electrode; wherein the cooler comprises a plurality of refrigerant circulation channels formed in the upper or lower electrode, and the refrigerant is circulated by each refrigerant The channel extends in a plane parallel to a major surface of the upper or lower electrode, and a refrigerant circulator for circulating the refrigerant in the refrigerant circulation channel, Each of the refrigerant circulation passages has a refrigerant inlet and a refrigerant outlet disposed in a central region of the upper or lower electrode, and is opposite to the refrigerant inlet and the refrigerant outlet of one of the refrigerant circulation passages. 2. The plasma processing apparatus of claim 1, further comprising: a cooling plate disposed such that the cooling plate is in contact with the lower electrode to cool the lower electrode; and a cooling tube is disposed Between the lower electrode and the cooling plate, and defining a passage therein to allow a cooling medium to circulate through the cooling tube, wherein the cooling tube is in direct contact with the lower electrode and the cooling plate . 3. The plasma processing apparatus of claim 2, wherein the cooling tube comprises: a pair of spaced transverse tube members; a plurality of spaced apart longitudinal tubular members disposed between opposite ends of the pair of transverse tubular members and coupled to the pair of transverse tubular members and extending perpendicular to the pair of transverse tubular members; an inlet tubular member coupled to a central portion of one of the pair of transverse tubular members; and an outlet tubular member coupled to a central portion of the other of the pair of transverse tubular members. 4. The plasma processing apparatus of claim 3, wherein a surface of the lower electrode and the cooling plate that are in contact with each other also forms an inscribed groove facing each other, which has a shape conforming to the cooling tube. The shape is such that the cooling tubes are respectively embedded between the inscribed grooves. 5. The plasma processing apparatus of claim 1, further comprising: a cooling plate disposed such that the cooling plate contacts the lower surface of the lower electrode to cool the lower electrode, and is provided with a plurality of recesses a hole having a predetermined width and a predetermined depth to define a plurality of cooling medium passages; 45 1314842 a plurality of sealing members disposed between the lower electrode and the contact surface of the cooling plate The cooling medium passages are sealed; and each of the cooling medium passages has a rectangular cross-sectional shape that allows the cooling medium to flow in the cooling plate at a high flow rate. 6. The plasma processing apparatus of claim 5, further comprising: a vortex formation preventing member disposed at an inlet of each of the cooling medium passages to prevent when the cooling medium is injected into the cooling medium passage The cooling medium forms a vortex. 7. The plasma processing apparatus of claim 1, further comprising: a cooling plate disposed such that the cooling plate contacts the lower surface of the lower electrode to cool the lower electrode, and is provided with a plurality of cooling a medium passage formed in the cooling plate and having a rectangular cross-sectional shape; a plurality of sealing members embedded in a narrow groove defined between the contact faces of the lower electrode and the cooling plate to seal the narrow grooves to respectively define a sealed space in the narrow groove; and a heat medium having excellent thermal conductivity and filled in the sealed spaces to enhance heat transfer efficiency from the lower electrode to the cooling plate. 8. The plasma processing apparatus according to claim 7 Wherein the heat transfer medium comprises at least one liquid having a low specific heat and being a mixture of ethylene glycol and deionized water in a ratio of 46 1314842 when proportioned. 9. The plasma processing apparatus of claim 1, further comprising: a temperature regulating plate disposed such that the temperature regulating plate is in contact with the lower electrode and is provided with a circulation line for extending Passing through a cooling or heating medium of the temperature regulating plate to heat or cool the lower electrode; Wherein the temperature regulating plate is formed by: preparing a parison from a material having a low melting point to form the circulating line; placing the parison in a mold and filling the mold with ceramic powder, and a parison is buried in the ceramic powder; and the ceramic powder is sintered, thereby forming a sintered ceramic body when the parison is melted, leaving a space in place where the parison is originally placed, and in the sintered ceramic This loop line is formed in the body. The plasma processing apparatus of claim 9, wherein the sintering is performed by using: 1, 〇 〇. C to 1, 2 0 0. The primary sintering treatment of the primary sintering temperature of C, and the use of 1,7 〇 〇. Secondary sintering treatment of the secondary sintering temperature of C. 11. The plasma processing apparatus of claim 1, wherein the material of the parison has a melting point between the primary sintering temperature and the secondary sintering temperature. 1 2. The plasma processing apparatus of claim 1, further comprising: a shower head comprising a plurality of outlets for supplying the substrate 1314842 should treat the gas, at least one refrigerant passage is formed in the upper head of the air shower head, and is disposed at the top of the air shower head, and is provided with a processing gas passage connected to the air outlet The upper support member is provided with a plurality of perforations; and a plurality of refrigerant wires extending in the perforations of the upper support member to be connected to the refrigerant passage of the shower head, and radially spaced apart from the individual circumferences of the perforations The surface is a preset distance. 1. The plasma processing apparatus of claim 12, wherein the perforations are filled with an insulating material. Set in etc. 48