KR100639712B1 - Furnace apparatus and heat treatment method using the apparatus - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a furnace apparatus for semiconductor manufacture and a heat treatment method thereof for rapidly cooling a high temperature heater in a diffusion and vapor phase thin film forming process (CVD process). It includes an air cooling means having a heat wire installed in the inside and a supply for supplying the gas for cooling into the heat insulating block, and a discharge portion for discharging the high-temperature gas inside the heat insulating block. Wherein the supply part has an inlet port into which the cooling gas is introduced and is provided to surround the lower side of the insulating block, a plurality of annular ducts installed vertically inside the insulating block, for direct injection of the cooling gas into the process tube. Supply pipes having injection ports and a plurality of injection holes formed through the lower portion of the insulating block so that the cooling gas introduced into the annular duct can be uniformly supplied into the insulating block.

Description

Furnace apparatus and heat treatment method using the apparatus {FURNACE APPARATUS AND HEAT TREATMENT METHOD USING THE APPARATUS}

1 shows schematically a furnace apparatus according to a preferred embodiment of the invention;

2 shows the air flow for cooling the process tube in the furnace apparatus shown in FIG. 1;

3 is a view showing a lower block of the insulating block in which the supply unit is installed;

4 is a cross-sectional view taken along the line Y-Y shown in FIG.

5 is a view showing an upper block of the insulation block in which the discharge unit is installed;

6 is a view for explaining the cooling unit.

<Description of Symbols for Major Parts of Drawings>

110: process tube

120: heater assembly

122: insulation block

124: hot wire

130: air cooling means

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing facility, and more particularly, to a furnace apparatus for semiconductor manufacturing and a heat treatment method thereof for rapidly cooling a high temperature heater in a diffusion and vapor phase thin film forming process (CVD process). will be.

As is well known, semiconductor devices are made by selectively repeating a process such as photographing, etching, diffusion, chemical vapor deposition, ion implantation, and the like on a substrate.

The diffusion process, which is one of the above-mentioned processes, is performed to diffuse impurities of a desired conductivity type into a substrate in a high temperature atmosphere. In addition, a diffusion path in which a diffusion process is performed is used to perform a process of forming a deposition or an oxide film on a surface of a substrate at about 800-1200 degrees or more.

Conventional diffusion furnace equipment has a very short time for heating the temperature of the diffusion furnace to a condition for processing (approximately 800-1200 degrees), while cooling the temperature of the diffusion furnace to the standby state (standby state). The time required is very long (average cooling temperature rate 2 ~ 3 ?? / min). Of course, the cooling water circulation line is installed on the outside of the heater, but the cooling water circulation line is installed on the outside of the insulation material, so high cooling effect is expected. Difficult to do

As such, the conventional diffusion furnace equipment has a disadvantage that the substrate throughput per unit time is very low because the time taken to cool the temperature of the heater is relatively long compared to the process time.

SUMMARY OF THE INVENTION The present invention has been made to solve such a conventional problem, and an object thereof is to provide a heat treatment apparatus and a method of a new type of semiconductor substrate capable of quenching the temperature inside the heater in order to shorten the process time.

The furnace apparatus for manufacturing a semiconductor according to the present invention for achieving the above object has a heater assembly which is installed to surround the process tube for heating the process tube in which a boat on which a plurality of substrates are mounted is located.

According to the present invention, the heater assembly comprises a heat insulating block; A heating wire installed inside the insulating block; Air cooling means having a supply unit for supplying a gas for cooling into the adiabatic block and an outlet for discharging high temperature gas inside the adiabatic block; The supply unit has an inlet port through which the gas for cooling flows and an annular duct installed to surround the lower side of the insulating block; Supply pipes installed vertically in the adiabatic block and having a plurality of injection ports for directly injecting the cooling gas into the process tube; It includes a plurality of injection holes formed through the lower portion of the insulating block so that the cooling gas introduced into the annular duct can be uniformly supplied into the insulating block.

According to the present invention, the injection holes are disposed radially in the insulating block; The injection holes are formed to be inclined such that the cooling gas is injected in a counterclockwise direction and rotates while spirally rotating around the process tube.

According to the present invention, the supply unit and the supply pump for forcibly supplying the cooling gas to the inlet port; The diaphragm further includes a diaphragm disposed adjacent to the injection holes in the annular duct and for directing the flow of the cooling gas toward the injection hole so that the cooling gas flows toward the injection hole.

According to the invention, the annular duct is made of a semi-ellipse in order to minimize the frictional resistance with the cooling gas flowing therein, the outside of the annular duct is wrapped by a double insulation.

According to the present invention, the discharge portion is discharged through the cooling gas supplied through the supply portion exit holes disposed radially on top of the insulating block; An annular duct having a discharge port and installed to surround the upper side of the insulating block to collect hot cooling gas discharged through the discharge holes; It includes a central hole formed in the upper center of the insulating block.

According to the present invention, the air cooling means further includes first and second cooling units for cooling the high temperature cooling gas discharged through the discharge unit and the central hole to room temperature.

According to the present invention, each of the first and second cooling units includes an inlet port through which high temperature cooling gas is introduced; A water cooling unit for cooling the high temperature cooling gas introduced through the inlet port; A suction pump for sucking the high temperature cooling gas; And an outlet port through which the cooling gas passing through the water cooling unit is discharged to the outside.

According to the present invention, one end of the water cooling unit is connected to the inlet port and the other end is connected to the suction pump, a plurality of aluminum heat sinks installed inside the body, and the plurality of aluminum heat sinks are installed to be displaced. And a coolant pipe.

In order to achieve the above object, a heat treatment method in a furnace apparatus for manufacturing a semiconductor comprising a heater assembly installed to surround the process tube for heating the process tube is located on which the boat on which a plurality of substrates are placed is located Heating the process tube to a predetermined processing temperature by a heating wire of the heater assembly; A boat loaded with a plurality of substrates is loaded into the process tube and heat treated; Unloading the boat after the heat treatment from the process tube; Immediately after the boat is unloaded, forced air cooling to rapidly cool the process tube. Here, the forced air cooling step is to discharge the hot air to the outside from the upper portion of the process tube, and to the space between the heater assembly and the process tube so that the cooling gas rises while rotating in a spiral around the process tube. It is supplied in an inclined direction.

According to the present invention, in the forced air cooling step, the gas for cooling is directly injected to the surface of the process tube.

Hereinafter, a system for a semiconductor substrate heat treatment process according to the present invention will be described in detail with reference to the accompanying drawings.

Advantages of the present invention over prior art will become apparent from the detailed description and claims with reference to the accompanying drawings. In particular, the present invention is well pointed out and claimed in the claims. However, the present invention may be best understood by reference to the following detailed description in conjunction with the accompanying drawings. Like reference numerals in the drawings denote like elements throughout the various drawings.

1 is a view showing a furnace apparatus for chemical vapor deposition (Chemical Vapor Deposition) according to an embodiment of the present invention.

1 to 2, the furnace apparatus 100 according to the present invention is a heat treatment apparatus that performs a process of diffusing impurities of a desired conductivity type in a substrate under a high temperature atmosphere. The furnace apparatus 100 comprises a process tube 110 consisting of an inner tube 112 and an outer tube 114, a heater assembly 120, and a boat 116 on which a plurality of substrates w are loaded. ), A seal cap 118 supporting the boat 116 and coupled to the flange 111 of the process tube 110, and connected to the seal cap 118 to connect the boat 116 to the process tube. Loader device 119 for loading / unloading 110 is provided.

The inner tube 112 is a tube made of quartz, where a quartz boat 116 having a substrate w loaded therein is inserted, and chemical vapor deposition proceeds on the substrate w. The outer tube 114 is installed on the outside of the inner tube 112 serves to seal the inside, the heater assembly 120 is installed on the outer side of the outer tube 114 to the substrate (w0) a predetermined temperature Will be heated.

One side of the flange 111 of the process tube is provided with a gas inlet 111a for injecting a chemical source gas into the inner tube 112, the other side is connected to a pump (not shown) the outer tube ( 114) An air inlet 111b is provided for sucking air to depressurize the inside.

Figure 2 is a view showing the heater assembly shown in Figure 1, Figures 3 and 5 show a heat insulating block installed with the supply and discharge, Figure 4 is a cross-sectional view taken along the line Y-Y shown in FIG.

As shown in FIGS. 2 to 5, the heater assembly 120 includes an insulating block 122 including an upper block 122a, a lower block 122b, and a side block 122c. The heating wire 124 for generating heat is installed inside the insulating block 122, and the cooling water circulation line 126 is installed outside the insulating block. A protective cover 126a is installed to surround the cooling water circulation line 126 to protect the cooling water circulation line 126. In addition, the heater assembly 1200 has an air cooling means 130 for forcibly lowering the temperature inside the insulating block 122.

Looking at the air-cooling means 130 in detail, the supply unit 132 is supplied to the inside of the insulating block, the outside air (or inert gas may be used, hereinafter referred to as external air) as the cooling gas, and the insulating block It includes a discharge unit 140 for the external air supplied to the inside is discharged out of the insulating block and a cooling unit for cooling the discharged inert gas to room temperature.

The supply part 132 is an annular duct 134 installed to surround the lower block 122b side of the heat insulating block 122, an inlet port 134a connected to the duct 134, and the inlet port 134a. A plurality of injection holes 136 and the insulating block is formed through the lower block 122b so that the gas introduced into the annular duct 134 is uniformly supplied into the insulating block 122 through It has supply pipes 138 installed vertically therein. The injection holes 136 are radially disposed in the lower block 122b and may be formed to spirally spray their injection angles.

A front end of the inlet port 134a is provided with a supply pump 133 for forcibly supplying external air.

The annular duct 134 is formed in a semi-elliptic shape in order to minimize frictional resistance with the external air flowing therein, and a double heat insulating material 134b is installed outside thereof. The reason why the heat insulating material 134b is provided in duplicate is to minimize a problem of heat loss during the main heat treatment process in the air passage part including the injection holes formed in the lower block 122b. In addition, there is a diaphragm 135 (shown in FIG. 3) that guides the flow of the external air to flow toward the injection holes 136. The diaphragms 135 are installed adjacent to the injection holes.

On the other hand, the injection holes 136 as shown in Figures 3 and 4, the injection holes 136 may be formed so that the outside air is injected in the counterclockwise direction in the horizontal plane seen from above. That is, the injection holes 136 have a structural feature formed to be inclined at a predetermined angle so that the external air is injected in a counterclockwise direction (indicated by an arrow). In the supply unit 132 having such a structural feature, external air is ejected counterclockwise through the injection holes 136, and ascends in a spiral shape while rotating around the process tube 110.

In addition, the supply pipes 138 are installed vertically in a circle between the heating wire 124 and the side block 122c, the number of about 16-20 is appropriate. The supply pipe 138 is made of a ceramic pipe and has 16-20 injection ports 138a for injecting external air directly into the side surface of the process tube. As such, the process tube 110 is quenched by external air injected through the injection ports 138a of the supply pipes 138.

The discharge unit 140 includes a central hole 148 formed in the center, an annular duct 142 installed to surround the side surface of the upper block 122a of the heat insulating block 122, and the duct 142. It has a discharge port 142a connected to each other, and a plurality of discharge holes 144 formed through the upper block 122a to discharge hot air inside the insulating block. The discharge holes 144 are disposed radially in the upper block 122a.

On the other hand, the inlet port 152 of the cooling unit 150 for cooling the hot air discharged through the discharge port is connected to the discharge port 142a of the discharge unit 140. In addition, the inlet port 152 of the cooling unit 150 for cooling the hot air discharged through the central hole is connected to the central hole of the discharge unit 140.

The cooling unit 150 includes a water cooling unit 154 for cooling hot air, a suction pump 156 for sucking air from the adiabatic block, and an outlet port 158 through which the air passing through the water cooling unit is discharged to the outside. Has Referring to FIG. 6, the water cooling unit 154 is an air cooling apparatus using cooling water, and includes a body 154a, aluminum heat sinks 154b, and a cooling water pipe 154c. The body 154a has one end connected to the inlet port 152 and the other end connected to the suction pump 156. Aluminum heat sinks 154b and the coolant pipe 154c are installed in the body. The water cooling unit using such cooling water is smaller than the existing chiller system, and its performance is excellent. It protects the suction pump from high temperature heat, extends the pump life, and costs less.

As described above, the deposition process in the furnace apparatus having the heater assembly 120 is as follows.

When the process tube 110 is heated to a predetermined process temperature (for example, 800-1200 degrees) by the heating wire 124 of the heater assembly 120, the boat 116 on which a plurality of substrates are loaded is loaded. It is lifted by the apparatus 119 and loaded into the process tube 110. Then, predetermined reaction gases are supplied into the process tube to perform heat treatment such as film formation or diffusion. When the heat treatment process is completed for a predetermined time, the boat 116 is unloaded from the process tube 110.

Immediately after the boat 116 is unloaded, a forced air cooling process is performed to rapidly cool the process tube 110. That is, when the suction pump 156 of the cooling unit 150 and the supply pump 133 of the supply unit are operated at the same time, the air (hot air) between the insulating block 122 and the process tube 110 is discharged. The supply unit 132 is suctioned (inflowed) into the cooling unit 150 through the discharge holes 144 of the unit 140, and at the same time, the supply unit 132 is connected to the space between the insulating block 122 and the process tube 110. Through the outside air (air at room temperature) is introduced. The outside air is injected into the space between the heat insulating block 122 and the process tube 110 through a path (inlet port-annular duct-injection holes) of the supply unit of the heater assembly 120. In addition, the outside air is directly injected to the surface of the process tube through the injection port (138a) of the supply pipe 138 of the side supply.

Here, the injection holes 136 are formed to be inclined as shown in FIGS. 3 and 4, so that external air is ejected counterclockwise through the injection holes 136 and rotates around the process tube 110. The spiral rises. As such, since the external air rises in a spiral shape while rotating the space between the insulating block 122 and the process tube 110, the external air flows evenly as a whole, resulting in uniformity of temperature (the overall uniform temperature Can be dropped). The outside air rises in a spiral shape to lower the temperature of the process tube and the heating wire, and the heated air is cooled through the discharge holes 144 and the central hole of the discharge part 140. Flows into. As such, hot air is quickly exhausted to the outside. The air introduced into the cooling unit 150 is cooled while passing through the water cooling unit 154 and then discharged to the outside through the outlet port 158.

Through the air flow, the internal temperature of the heater assembly 120 is rapidly cooled at a speed of 20-30 ° / min from 800 to 1200 degrees to 300 degrees, thereby reducing the cooling time of the process tube (or heater assembly). It can be shortened. In addition, since the air flow rises from the bottom of the process tube to the top and is cooled through the side wall wall, temperature uniformity can be obtained.

The foregoing detailed description illustrates the present invention. In addition, the foregoing description merely shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. And, it is possible to change or modify within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the written description, and / or the skill or knowledge in the art. The above-described embodiments are for explaining the best state in carrying out the present invention, the use of other inventions such as the present invention in other state known in the art, and the specific fields of application and uses of the present invention. Various changes are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to include other embodiments.

As described above in detail, the present invention can obtain the following effects. First, since the temperature inside the heater can be uniformly and quickly cooled, the process waiting time can be shortened, thereby improving productivity. Second, the air flow into the insulation block can be significantly increased by increasing the flow rate of the air inside the circular duct to the injection holes and reducing the frictional resistance inside the circular duct. . Third, by installing a simple device using a coolant can quickly cool the hot air. And the pump life can be extended by protecting the pump from high temperature heat.

Fourth, the cooling effect can be obtained more rapidly because the cool air is introduced from the lower surface and the cool air is injected directly from the side wall to the circle.

Claims (10)

delete A furnace apparatus for manufacturing a semiconductor having a heater assembly installed to surround a process tube containing a plurality of substrates: The heater assembly Adiabatic block; A heating wire installed inside the insulating block; Air cooling means having a supply unit for supplying a gas for cooling into the adiabatic block and an outlet for discharging high temperature gas inside the adiabatic block; The supply part An annular duct having an inlet port into which the cooling gas is introduced and surrounding the lower side of the insulating block; Supply pipes installed vertically in the adiabatic block and having a plurality of injection ports for directly injecting the cooling gas into the process tube; Cooling gas introduced into the annular duct is injected counterclockwise to include a plurality of injection holes formed radially and inclined in the lower portion of the insulating block so as to rise while rotating in a spiral around the process tube. Furnace apparatus for semiconductor manufacturing. A furnace apparatus for manufacturing a semiconductor having a heater assembly installed to surround a process tube containing a plurality of substrates: The heater assembly Insulation block; A heating wire installed inside the insulating block; Air cooling means having a supply unit for supplying a gas for cooling into the adiabatic block and an outlet for discharging high temperature gas inside the adiabatic block; The supply part An annular duct having an inlet port into which the cooling gas is introduced and surrounding the lower side of the insulating block; Supply pipes installed vertically in the adiabatic block and having a plurality of injection ports for directly injecting the cooling gas into the process tube; A plurality of injection holes formed through the lower portion of the insulating block so that the cooling gas introduced into the annular duct can be uniformly supplied into the insulating block; A supply pump for forcibly supplying cooling gas to the inlet port; And And a diaphragm disposed adjacent to the injection holes in the annular duct and configured to direct the flow of the cooling gas toward the injection hole so that the cooling gas flows toward the injection hole. Furnace device for A furnace apparatus for manufacturing a semiconductor having a heater assembly installed to surround a process tube containing a plurality of substrates: The heater assembly Insulation block; A heating wire installed inside the insulating block; Air cooling means having a supply unit for supplying a gas for cooling into the adiabatic block and an outlet for discharging high temperature gas inside the adiabatic block; The supply part An annular duct having an inlet port into which the cooling gas is introduced and surrounding the lower side of the insulating block; Supply pipes installed vertically in the adiabatic block and having a plurality of injection ports for directly injecting the cooling gas into the process tube; A plurality of injection holes formed through the lower portion of the insulating block so that the cooling gas introduced into the annular duct can be uniformly supplied into the insulating block; The annular duct is made of a semi-ellipse in order to minimize the frictional resistance with the cooling gas flowing therein, Furnace apparatus for manufacturing a semiconductor, characterized in that the outside of the annular duct is wrapped by a double insulation. A furnace apparatus for manufacturing a semiconductor having a heater assembly installed to surround a process tube containing a plurality of substrates: The heater assembly Adiabatic block; A heating wire installed inside the insulating block; Air cooling means having a supply unit for supplying a gas for cooling into the adiabatic block and an outlet for discharging high temperature gas inside the adiabatic block; The supply part An annular duct having an inlet port into which the cooling gas is introduced and surrounding the lower side of the insulating block; Supply pipes installed vertically in the adiabatic block and having a plurality of injection ports for directly injecting the cooling gas into the process tube; A plurality of injection holes formed through the lower portion of the insulating block so that the cooling gas introduced into the annular duct can be uniformly supplied into the insulating block; The discharge portion Discharge holes through which the cooling gas supplied through the supply part exits and are disposed radially on the insulating block; An annular duct having a discharge port and installed to surround the upper side of the insulating block to collect hot cooling gas discharged through the discharge holes; And Furnace apparatus for manufacturing a semiconductor, characterized in that it comprises a central hole formed in the upper center of the insulating block. The method of claim 5, The air cooling means Furnace apparatus for manufacturing a semiconductor, characterized in that further comprising a first and second cooling unit for cooling the high-temperature cooling gas discharged through the discharge portion and the central hole to room temperature. The method of claim 6, Each of the first and second cooling units An inlet port through which a high temperature cooling gas is introduced; A water cooling unit for cooling the high temperature cooling gas introduced through the inlet port; A suction pump for sucking the high temperature cooling gas; Furnace apparatus for manufacturing a semiconductor, characterized in that it comprises an outlet port for discharging the gas for cooling passing through the water cooling unit to the outside. The method of claim 7, wherein The water cooling unit One end is connected to the inlet port and the other end is connected to the suction pump; A plurality of aluminum heat sinks installed in the body, Furnace apparatus for manufacturing a semiconductor, characterized in that it has a cooling water pipe which is installed to be offset from the plurality of aluminum heat sinks. delete delete

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