JP2013512311A5 - - Google Patents
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- JP2013512311A5 JP2013512311A5 JP2012541134A JP2012541134A JP2013512311A5 JP 2013512311 A5 JP2013512311 A5 JP 2013512311A5 JP 2012541134 A JP2012541134 A JP 2012541134A JP 2012541134 A JP2012541134 A JP 2012541134A JP 2013512311 A5 JP2013512311 A5 JP 2013512311A5
- Authority
- JP
- Japan
- Prior art keywords
- metal chalcogenide
- chalcogenide nanoparticles
- optionally
- substrate
- reaction mixture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 150000004770 chalcogenides Chemical class 0.000 claims description 16
- 239000002105 nanoparticle Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 239000010410 layer Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 239000011541 reaction mixture Substances 0.000 claims description 7
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 5
- 229910052798 chalcogen Inorganic materials 0.000 claims description 4
- 150000001787 chalcogens Chemical class 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 239000003446 ligand Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 239000006117 anti-reflective coating Substances 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 150000003346 selenoethers Chemical class 0.000 description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- SEAVSGQBBULBCJ-UHFFFAOYSA-N [Sn]=S.[Cu] Chemical compound [Sn]=S.[Cu] SEAVSGQBBULBCJ-UHFFFAOYSA-N 0.000 description 2
- -1 alkali metal selenide Chemical class 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 2
- WILFBXOGIULNAF-UHFFFAOYSA-N copper sulfanylidenetin zinc Chemical compound [Sn]=S.[Zn].[Cu] WILFBXOGIULNAF-UHFFFAOYSA-N 0.000 description 2
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 150000003573 thiols Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 241001061127 Thione Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical class [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910052977 alkali metal sulfide Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 150000002258 gallium Chemical class 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 150000003958 selenols Chemical class 0.000 description 1
- GYSDUVRPSWKYDJ-UHFFFAOYSA-N selinone Chemical compound C1=CC(OCC=C(C)C)=CC=C1C1OC2=CC(O)=CC(O)=C2C(=O)C1 GYSDUVRPSWKYDJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
Applications Claiming Priority (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26438909P | 2009-11-25 | 2009-11-25 | |
| US26438709P | 2009-11-25 | 2009-11-25 | |
| US26440409P | 2009-11-25 | 2009-11-25 | |
| US26438309P | 2009-11-25 | 2009-11-25 | |
| US26439309P | 2009-11-25 | 2009-11-25 | |
| US61/264,387 | 2009-11-25 | ||
| US61/264,389 | 2009-11-25 | ||
| US61/264,383 | 2009-11-25 | ||
| US61/264,404 | 2009-11-25 | ||
| US61/264,393 | 2009-11-25 | ||
| PCT/US2010/057566 WO2011066205A1 (en) | 2009-11-25 | 2010-11-22 | Aqueous process for producing crystalline copper chalcogenide nanoparticles, the nanoparticles so-produced, and inks and coated substrates incorporating the nanoparticles |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013512311A JP2013512311A (ja) | 2013-04-11 |
| JP2013512311A5 true JP2013512311A5 (enExample) | 2013-10-03 |
Family
ID=43383645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012541134A Withdrawn JP2013512311A (ja) | 2009-11-25 | 2010-11-22 | 結晶性銅カルコゲニドナノ粒子の水性製造方法、そのように製造されたナノ粒子、ならびにこれらのナノ粒子を組み込んだインクおよびコーテッド基板 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8470636B2 (enExample) |
| EP (1) | EP2504276A1 (enExample) |
| JP (1) | JP2013512311A (enExample) |
| KR (1) | KR20120098799A (enExample) |
| CN (1) | CN102612486A (enExample) |
| WO (1) | WO2011066205A1 (enExample) |
Families Citing this family (70)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8524524B2 (en) * | 2010-04-22 | 2013-09-03 | General Electric Company | Methods for forming back contact electrodes for cadmium telluride photovoltaic cells |
| FR2964044B1 (fr) * | 2010-08-26 | 2012-09-14 | Commissariat Energie Atomique | Emulsion de metal liquide |
| WO2012075259A1 (en) * | 2010-12-03 | 2012-06-07 | E. I. Du Pont De Nemours And Company | Molecular precursors and processes for preparing copper indium gallium sulfide/selenide coatings and films |
| CN102675960B (zh) * | 2011-03-08 | 2015-08-05 | 深圳市尊业纳米材料有限公司 | 一种纳米铜锡合金导电油墨及其制备方法和使用方法 |
| FR2972443B1 (fr) * | 2011-03-09 | 2016-10-21 | Univ Paul Sabatier - Toulouse Iii (Ups) | Dispersion colloidale d'un materiau a l'etat divise forme de chalcogenure metallique dans un milieu aqueux, materiau a l'etat divise et leurs utilisations |
| US8771555B2 (en) | 2011-05-06 | 2014-07-08 | Neo Solar Power Corp. | Ink composition |
| FR2975223B1 (fr) * | 2011-05-10 | 2016-12-23 | Electricite De France | Traitement thermique par injection d'un gaz caloporteur. |
| JP2012250889A (ja) * | 2011-06-06 | 2012-12-20 | Toyota Motor Corp | 半導体粒子及びその製造方法 |
| JP5687343B2 (ja) * | 2011-06-27 | 2015-03-18 | 京セラ株式会社 | 半導体層の製造方法、光電変換装置の製造方法および半導体原料 |
| US20130037110A1 (en) * | 2011-08-10 | 2013-02-14 | International Business Machines Corporation | Particle-Based Precursor Formation Method and Photovoltaic Device Thereof |
| US9368660B2 (en) * | 2011-08-10 | 2016-06-14 | International Business Machines Corporation | Capping layers for improved crystallization |
| US8551802B2 (en) * | 2011-09-12 | 2013-10-08 | Intermolecular, Inc. | Laser annealing for thin film solar cells |
| JP2013064108A (ja) * | 2011-09-16 | 2013-04-11 | Delsolar Co Ltd | インク組成物及びその形成方法 |
| ES2402313B1 (es) * | 2011-09-30 | 2014-03-04 | Universitat Jaume I De Castellón | Tintas para la obtención "in situ" de calcógenos y/o calcogenuros que dan lugar a capas de semiconductores, su obtención y modo de empleo |
| EP2762444A4 (en) * | 2011-09-30 | 2015-06-10 | Toppan Printing Co Ltd | INK FOR PRODUCING A COMPOSITE THIN-FINISHED LAYER AND PRODUCTION METHOD THEREFOR |
| EP2786419B1 (en) * | 2011-11-30 | 2020-02-12 | Konica Minolta Laboratory U.S.A., Inc. | Method of manufacturing a photovoltaic device |
| US20130217211A1 (en) * | 2012-02-21 | 2013-08-22 | Aqt Solar, Inc. | Controlled-Pressure Process for Production of CZTS Thin-Films |
| US9573809B2 (en) * | 2012-03-30 | 2017-02-21 | Micron Technology, Inc. | Method of forming a metal chalcogenide material and methods of forming memory cells including same |
| EP2647595A2 (en) * | 2012-04-03 | 2013-10-09 | Neo Solar Power Corp. | Ink composition, chalcogenide semiconductor film, photovoltaic device and methods for forming the same |
| WO2013172949A1 (en) * | 2012-05-14 | 2013-11-21 | E. I. Du Pont De Nemours And Company | Dispersible metal chalcogenide nanoparticles |
| EP2870621B1 (en) | 2012-07-09 | 2018-12-26 | Nanoco Technologies, Ltd. | Group 13 selenide nanoparticles |
| US8741688B2 (en) | 2012-07-24 | 2014-06-03 | Micron Technology, Inc. | Methods of forming a metal chalcogenide material |
| FR2993792B1 (fr) * | 2012-07-26 | 2017-09-15 | Imra Europe Sas | Film de chalcogenure(s) metallique(s) cristallise(s) a gros grains, solution colloidale de particules amorphes et procedes de preparation. |
| US8871560B2 (en) * | 2012-08-09 | 2014-10-28 | International Business Machines Corporation | Plasma annealing of thin film solar cells |
| US10752514B2 (en) | 2012-09-07 | 2020-08-25 | Cornell University | Metal chalcogenide synthesis method and applications |
| JP6008736B2 (ja) * | 2012-12-26 | 2016-10-19 | 富士フイルム株式会社 | 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタおよび電子デバイス |
| KR101960945B1 (ko) * | 2013-03-04 | 2019-03-20 | 나노코 테크놀로지스 리미티드 | 박막 태양 전지를 위한 구리-인듐-갈륨-칼코게나이드 나노 입자 전구체 |
| CN108383090A (zh) * | 2013-03-15 | 2018-08-10 | 纳米技术有限公司 | Cu2XSnY4纳米粒子 |
| KR101716367B1 (ko) * | 2013-03-15 | 2017-03-14 | 나노코 테크놀로지스 리미티드 | Cu2ZnSnS4 나노 입자들 |
| US9634161B2 (en) | 2013-05-01 | 2017-04-25 | Delaware State University | Nanoscale precursors for synthesis of Fe2(Si,Ge)(S,Se)4 crystalline particles and layers |
| US8999746B2 (en) | 2013-08-08 | 2015-04-07 | Tokyo Ohka Kogyo Co., Ltd. | Method of forming metal chalcogenide dispersion, metal chalcogenide dispersion, method of producing light absorbing layer of solar cell, method of producing solar cell |
| US9552985B2 (en) * | 2013-08-09 | 2017-01-24 | Japan Advanced Institute Of Science And Technology | Oxide semiconductor layer and production method therefor, oxide semiconductor precursor, oxide semiconductor layer, semiconductor element, and electronic device |
| WO2015030275A1 (ko) * | 2013-08-30 | 2015-03-05 | 한국에너지기술연구원 | 이성분계 나노입자를 포함하는 슬러리의 숙성 단계가 도입된 ci(g)s계 박막의 제조방법 및 그 방법에 의해 제조된 ci(g)s계 박막 |
| KR101650049B1 (ko) | 2013-09-12 | 2016-08-22 | 주식회사 엘지화학 | 태양전지 광흡수층 제조용 금속 칼코게나이드 나노 입자 및 이의 제조방법 |
| US10170651B2 (en) * | 2014-01-30 | 2019-01-01 | Nanoco Technologies Ltd. | Metal-doped cu(In,Ga) (S,Se)2 nanoparticles |
| CN103803632B (zh) * | 2014-02-28 | 2016-04-06 | 上海海事大学 | 一种碳包覆光热转换纳米材料的制备方法 |
| US10888836B2 (en) * | 2014-07-25 | 2021-01-12 | Chemical and Metal Technologies LLC | Extraction of target materials using CZTS sorbent |
| WO2016053016A1 (ko) * | 2014-09-29 | 2016-04-07 | 이화여자대학교 산학협력단 | ＣＺＴＳｅ계 박막 및 이의 제조 방법, 및 상기 ＣＺＴＳｅ계 박막을 이용한 태양전지 |
| JP6554332B2 (ja) | 2014-10-30 | 2019-07-31 | 東京応化工業株式会社 | 均一系塗布液及びその製造方法、太陽電池用光吸収層及びその製造方法、並びに太陽電池及びその製造方法 |
| KR102412965B1 (ko) | 2014-12-30 | 2022-06-24 | 삼성전자주식회사 | 2차원 물질층을 포함하는 전자소자 및 잉크젯 프린팅을 이용한 전자소자의 제조방법 |
| US10767112B2 (en) * | 2015-01-15 | 2020-09-08 | The Trustees Of The Columbia University In The City Of New York | Methods of producing metal sulfides, metal selenides, and metal sulfides/selenides having controlled architectures using kinetic control |
| KR101708260B1 (ko) * | 2015-06-18 | 2017-02-20 | 연세대학교 산학협력단 | 전이금속 칼코겐화물 구조체 및 그 제조방법 |
| FR3039531A1 (enExample) * | 2015-07-28 | 2017-02-03 | Nexdot | |
| KR102613046B1 (ko) * | 2015-10-06 | 2023-12-12 | 삼성전자주식회사 | 금속 칼코게나이드 나노입자 및 그 제조방법 |
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| CN106025056A (zh) * | 2016-06-12 | 2016-10-12 | 电子科技大学 | 一种锡硫化合物热电材料的制备方法 |
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| KR102038552B1 (ko) * | 2017-11-16 | 2019-10-30 | 한국세라믹기술원 | 전이금속 칼코겐화합물을 이용한 전계 효과형 트랜지스터의 제조 방법 |
| CN108383150B (zh) * | 2018-03-01 | 2020-10-30 | 复旦大学 | 一种硫化锌纳米材料的制备方法 |
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| RU2695208C1 (ru) * | 2018-07-17 | 2019-07-22 | Федеральное государственное бюджетное учреждение науки Институт проблем химической физики Российской академии наук (ИПХФ РАН) | Способ получения монозеренных кестеритных порошков |
| RU2718124C1 (ru) * | 2019-06-10 | 2020-03-30 | Федеральное государственное бюджетное учреждение науки Институт проблем химической физики Российской Академии наук (ФГБУН ИПХФ РАН) | Способ получения монозеренных кестеритных порошков из тройных халькогенидов меди и олова и соединений цинка |
| CN113013314B (zh) * | 2019-12-20 | 2022-12-13 | 中国科学院上海硅酸盐研究所 | 一种p型高性能Cu-Sn-S类金刚石结构热电材料及其制备方法 |
| CN115348948B (zh) * | 2020-03-11 | 2024-11-08 | 约翰内斯堡威特沃特斯兰德大学 | 碱金属四元纳米材料 |
| US11492547B2 (en) | 2020-06-04 | 2022-11-08 | UbiQD, Inc. | Low-PH nanoparticles and ligands |
| CN111755323B (zh) * | 2020-07-07 | 2023-07-21 | 内蒙古大学 | 一种铜锌锡硫太阳电池吸收层薄膜的制备方法 |
| CN112142097B (zh) * | 2020-08-31 | 2021-10-29 | 武汉理工大学 | 三水合锡酸镉及其制备方法和应用 |
| CN112279293B (zh) * | 2020-11-02 | 2023-08-25 | 贵州理工学院 | 一种硫化铜纳米材料的制备方法 |
| CN113517370B (zh) * | 2021-06-11 | 2022-10-14 | 上海应用技术大学 | 一种异质构型太阳能电池结构及其制备方法与应用 |
| CN113371754B (zh) * | 2021-06-23 | 2022-06-10 | 石久光学科技发展(北京)有限公司 | 一种高纯度锡酸镉粉体及其制备方法 |
| CN114436318B (zh) * | 2022-01-07 | 2023-10-31 | 安徽师范大学 | 一种水相合成制备单分散Cu2-xS纳米晶的方法 |
| CN114759140B (zh) * | 2022-04-13 | 2025-09-09 | 西北师范大学 | 一种铜锡硫（cts）忆阻器及其制备方法 |
| CN114933327B (zh) * | 2022-06-13 | 2023-12-01 | 佛山(华南)新材料研究院 | 一种制氢材料及其制备方法、应用 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2921661B1 (fr) * | 2007-10-01 | 2013-05-31 | Centre Nat Rech Scient | Solide hybride organique inorganique a surface modifiee. |
| US20090305449A1 (en) * | 2007-12-06 | 2009-12-10 | Brent Bollman | Methods and Devices For Processing A Precursor Layer In a Group VIA Environment |
-
2010
- 2010-11-22 WO PCT/US2010/057566 patent/WO2011066205A1/en not_active Ceased
- 2010-11-22 US US13/511,699 patent/US8470636B2/en not_active Expired - Fee Related
- 2010-11-22 KR KR20127016243A patent/KR20120098799A/ko not_active Withdrawn
- 2010-11-22 EP EP10787216A patent/EP2504276A1/en not_active Withdrawn
- 2010-11-22 CN CN2010800521136A patent/CN102612486A/zh active Pending
- 2010-11-22 JP JP2012541134A patent/JP2013512311A/ja not_active Withdrawn
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