CN102612486A - 用于生产结晶铜硫属元素化物纳米颗粒的含水方法、如此生产的纳米颗粒、以及掺入了此类纳米颗粒的油墨和涂覆的基底 - Google Patents

用于生产结晶铜硫属元素化物纳米颗粒的含水方法、如此生产的纳米颗粒、以及掺入了此类纳米颗粒的油墨和涂覆的基底 Download PDF

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CN102612486A
CN102612486A CN2010800521136A CN201080052113A CN102612486A CN 102612486 A CN102612486 A CN 102612486A CN 2010800521136 A CN2010800521136 A CN 2010800521136A CN 201080052113 A CN201080052113 A CN 201080052113A CN 102612486 A CN102612486 A CN 102612486A
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metal chalcogenide
nano particle
particle
metal
selenide
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Chinese (zh)
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L·K·约翰逊
D·R·拉杜
赖政宇
卢美军
I·马拉约维基
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EIDP Inc
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EI Du Pont de Nemours and Co
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C01G19/006—Compounds containing tin, with or without oxygen or hydrogen, and containing two or more other elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • C01G11/00—Compounds of cadmium
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    • C01—INORGANIC CHEMISTRY
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    • C01G3/00—Compounds of copper
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
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    • C09D11/02—Printing inks
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    • C09D11/00—Inks
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
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    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
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    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
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    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
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    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Powder Metallurgy (AREA)
  • Pigments, Carbon Blacks, Or Wood Stains (AREA)
  • Paints Or Removers (AREA)
  • Photovoltaic Devices (AREA)
CN2010800521136A 2009-11-25 2010-11-22 用于生产结晶铜硫属元素化物纳米颗粒的含水方法、如此生产的纳米颗粒、以及掺入了此类纳米颗粒的油墨和涂覆的基底 Pending CN102612486A (zh)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US26438909P 2009-11-25 2009-11-25
US26438709P 2009-11-25 2009-11-25
US26440409P 2009-11-25 2009-11-25
US26438309P 2009-11-25 2009-11-25
US26439309P 2009-11-25 2009-11-25
US61/264,387 2009-11-25
US61/264,389 2009-11-25
US61/264,383 2009-11-25
US61/264,404 2009-11-25
US61/264,393 2009-11-25
PCT/US2010/057566 WO2011066205A1 (en) 2009-11-25 2010-11-22 Aqueous process for producing crystalline copper chalcogenide nanoparticles, the nanoparticles so-produced, and inks and coated substrates incorporating the nanoparticles

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CN102612486A true CN102612486A (zh) 2012-07-25

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US (1) US8470636B2 (enExample)
EP (1) EP2504276A1 (enExample)
JP (1) JP2013512311A (enExample)
KR (1) KR20120098799A (enExample)
CN (1) CN102612486A (enExample)
WO (1) WO2011066205A1 (enExample)

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CN103803632A (zh) * 2014-02-28 2014-05-21 上海海事大学 一种碳包覆光热转换纳米材料的制备方法
CN105164047A (zh) * 2013-03-15 2015-12-16 纳米技术有限公司 Cu2ZnSnS4纳米粒子
CN105518872A (zh) * 2013-09-12 2016-04-20 株式会社Lg化学 用于制造太阳能电池的光吸收层的金属硫属化物纳米颗粒及其制备方法
CN106025056A (zh) * 2016-06-12 2016-10-12 电子科技大学 一种锡硫化合物热电材料的制备方法
CN106505114A (zh) * 2016-11-03 2017-03-15 中国科学院兰州化学物理研究所 一种铜锡硫光吸收层薄膜材料的制备方法
CN107919289A (zh) * 2014-01-30 2018-04-17 纳米技术有限公司 用于将Cu(In,Ga)(S,Se)2纳米粒子与钠或锑掺杂的方法
CN108137323A (zh) * 2015-07-28 2018-06-08 奈科斯多特股份公司 性能增强的基于中红外和远红外纳米晶体的光电探测器
CN108249475A (zh) * 2018-03-01 2018-07-06 复旦大学 一种铜铟硫纳米材料的简易制备方法
CN108383150A (zh) * 2018-03-01 2018-08-10 复旦大学 一种硫化锌纳米材料的制备方法
CN108383090A (zh) * 2013-03-15 2018-08-10 纳米技术有限公司 Cu2XSnY4纳米粒子
CN112142097A (zh) * 2020-08-31 2020-12-29 武汉理工大学 三水合锡酸镉及其制备方法和应用
CN113371754A (zh) * 2021-06-23 2021-09-10 石久光学科技发展(北京)有限公司 一种高纯度锡酸镉粉体及其制备方法
CN115348948A (zh) * 2020-03-11 2022-11-15 约翰内斯堡威特沃特斯兰德大学 碱金属四元纳米材料

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WO2012075259A1 (en) * 2010-12-03 2012-06-07 E. I. Du Pont De Nemours And Company Molecular precursors and processes for preparing copper indium gallium sulfide/selenide coatings and films
CN102675960B (zh) * 2011-03-08 2015-08-05 深圳市尊业纳米材料有限公司 一种纳米铜锡合金导电油墨及其制备方法和使用方法
FR2972443B1 (fr) * 2011-03-09 2016-10-21 Univ Paul Sabatier - Toulouse Iii (Ups) Dispersion colloidale d'un materiau a l'etat divise forme de chalcogenure metallique dans un milieu aqueux, materiau a l'etat divise et leurs utilisations
US8771555B2 (en) 2011-05-06 2014-07-08 Neo Solar Power Corp. Ink composition
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US8551802B2 (en) * 2011-09-12 2013-10-08 Intermolecular, Inc. Laser annealing for thin film solar cells
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ES2402313B1 (es) * 2011-09-30 2014-03-04 Universitat Jaume I De Castellón Tintas para la obtención "in situ" de calcógenos y/o calcogenuros que dan lugar a capas de semiconductores, su obtención y modo de empleo
EP2762444A4 (en) * 2011-09-30 2015-06-10 Toppan Printing Co Ltd INK FOR PRODUCING A COMPOSITE THIN-FINISHED LAYER AND PRODUCTION METHOD THEREFOR
EP2786419B1 (en) * 2011-11-30 2020-02-12 Konica Minolta Laboratory U.S.A., Inc. Method of manufacturing a photovoltaic device
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US9573809B2 (en) * 2012-03-30 2017-02-21 Micron Technology, Inc. Method of forming a metal chalcogenide material and methods of forming memory cells including same
EP2647595A2 (en) * 2012-04-03 2013-10-09 Neo Solar Power Corp. Ink composition, chalcogenide semiconductor film, photovoltaic device and methods for forming the same
WO2013172949A1 (en) * 2012-05-14 2013-11-21 E. I. Du Pont De Nemours And Company Dispersible metal chalcogenide nanoparticles
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US8741688B2 (en) 2012-07-24 2014-06-03 Micron Technology, Inc. Methods of forming a metal chalcogenide material
FR2993792B1 (fr) * 2012-07-26 2017-09-15 Imra Europe Sas Film de chalcogenure(s) metallique(s) cristallise(s) a gros grains, solution colloidale de particules amorphes et procedes de preparation.
US8871560B2 (en) * 2012-08-09 2014-10-28 International Business Machines Corporation Plasma annealing of thin film solar cells
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JP6008736B2 (ja) * 2012-12-26 2016-10-19 富士フイルム株式会社 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタおよび電子デバイス
KR101960945B1 (ko) * 2013-03-04 2019-03-20 나노코 테크놀로지스 리미티드 박막 태양 전지를 위한 구리-인듐-갈륨-칼코게나이드 나노 입자 전구체
US9634161B2 (en) 2013-05-01 2017-04-25 Delaware State University Nanoscale precursors for synthesis of Fe2(Si,Ge)(S,Se)4 crystalline particles and layers
US8999746B2 (en) 2013-08-08 2015-04-07 Tokyo Ohka Kogyo Co., Ltd. Method of forming metal chalcogenide dispersion, metal chalcogenide dispersion, method of producing light absorbing layer of solar cell, method of producing solar cell
US9552985B2 (en) * 2013-08-09 2017-01-24 Japan Advanced Institute Of Science And Technology Oxide semiconductor layer and production method therefor, oxide semiconductor precursor, oxide semiconductor layer, semiconductor element, and electronic device
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