KR20120098799A - 결정형 구리 칼코게나이드 나노입자의 수성 제조 방법, 그렇게 제조된 나노입자, 및 나노입자를 포함하는 잉크 및 코팅된 기재 - Google Patents

결정형 구리 칼코게나이드 나노입자의 수성 제조 방법, 그렇게 제조된 나노입자, 및 나노입자를 포함하는 잉크 및 코팅된 기재 Download PDF

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KR20120098799A
KR20120098799A KR20127016243A KR20127016243A KR20120098799A KR 20120098799 A KR20120098799 A KR 20120098799A KR 20127016243 A KR20127016243 A KR 20127016243A KR 20127016243 A KR20127016243 A KR 20127016243A KR 20120098799 A KR20120098799 A KR 20120098799A
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metal chalcogenide
nanoparticles
metal
crystalline
selenide
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Korean (ko)
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린다 카예 존슨
다니엘라 로디카 라두
쳉-유 라이
메이준 루
이리나 말라요비치
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이 아이 듀폰 디 네모아 앤드 캄파니
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C01G19/006—Compounds containing tin, with or without oxygen or hydrogen, and containing two or more other elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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    • C01B17/00—Sulfur; Compounds thereof
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
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    • C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
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    • C01G11/00—Compounds of cadmium
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    • C09D11/30—Inkjet printing inks
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02521—Materials
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    • H01L21/02587—Structure
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    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
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    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
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    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
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    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
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  • Composite Materials (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Powder Metallurgy (AREA)
  • Photovoltaic Devices (AREA)
  • Paints Or Removers (AREA)
  • Pigments, Carbon Blacks, Or Wood Stains (AREA)
KR20127016243A 2009-11-25 2010-11-22 결정형 구리 칼코게나이드 나노입자의 수성 제조 방법, 그렇게 제조된 나노입자, 및 나노입자를 포함하는 잉크 및 코팅된 기재 Withdrawn KR20120098799A (ko)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US26438909P 2009-11-25 2009-11-25
US26438709P 2009-11-25 2009-11-25
US26440409P 2009-11-25 2009-11-25
US26438309P 2009-11-25 2009-11-25
US26439309P 2009-11-25 2009-11-25
US61/264,387 2009-11-25
US61/264,389 2009-11-25
US61/264,383 2009-11-25
US61/264,404 2009-11-25
US61/264,393 2009-11-25

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US (1) US8470636B2 (enExample)
EP (1) EP2504276A1 (enExample)
JP (1) JP2013512311A (enExample)
KR (1) KR20120098799A (enExample)
CN (1) CN102612486A (enExample)
WO (1) WO2011066205A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014039937A1 (en) * 2012-09-07 2014-03-13 Cornell University Metal chalcogenide synthesis method and applications
KR20160041947A (ko) * 2013-08-09 2016-04-18 고쿠리츠다이가쿠호진 호쿠리쿠 센단 가가쿠 기쥬츠 다이가쿠인 다이가쿠 산화물 반도체층 및 그 제조방법, 그리고 산화물 반도체의 전구체, 산화물 반도체층, 반도체 소자, 및 전자 디바이스
KR20170041091A (ko) * 2015-10-06 2017-04-14 삼성전자주식회사 금속 칼코게나이드 나노입자 및 그 제조방법
KR101874227B1 (ko) * 2017-01-18 2018-08-02 한양대학교 에리카산학협력단 구리 칼코지나이드 광 흡수체 및 광 흡수 필름, 및 그들의 제조 방법.
KR20190055992A (ko) * 2017-11-16 2019-05-24 한국세라믹기술원 전이금속 칼코겐화합물을 이용한 전계 효과형 트랜지스터의 제조 방법

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8524524B2 (en) * 2010-04-22 2013-09-03 General Electric Company Methods for forming back contact electrodes for cadmium telluride photovoltaic cells
FR2964044B1 (fr) * 2010-08-26 2012-09-14 Commissariat Energie Atomique Emulsion de metal liquide
WO2012075259A1 (en) * 2010-12-03 2012-06-07 E. I. Du Pont De Nemours And Company Molecular precursors and processes for preparing copper indium gallium sulfide/selenide coatings and films
CN102675960B (zh) * 2011-03-08 2015-08-05 深圳市尊业纳米材料有限公司 一种纳米铜锡合金导电油墨及其制备方法和使用方法
FR2972443B1 (fr) * 2011-03-09 2016-10-21 Univ Paul Sabatier - Toulouse Iii (Ups) Dispersion colloidale d'un materiau a l'etat divise forme de chalcogenure metallique dans un milieu aqueux, materiau a l'etat divise et leurs utilisations
US8771555B2 (en) 2011-05-06 2014-07-08 Neo Solar Power Corp. Ink composition
FR2975223B1 (fr) * 2011-05-10 2016-12-23 Electricite De France Traitement thermique par injection d'un gaz caloporteur.
JP2012250889A (ja) * 2011-06-06 2012-12-20 Toyota Motor Corp 半導体粒子及びその製造方法
JP5687343B2 (ja) * 2011-06-27 2015-03-18 京セラ株式会社 半導体層の製造方法、光電変換装置の製造方法および半導体原料
US20130037110A1 (en) * 2011-08-10 2013-02-14 International Business Machines Corporation Particle-Based Precursor Formation Method and Photovoltaic Device Thereof
US9368660B2 (en) * 2011-08-10 2016-06-14 International Business Machines Corporation Capping layers for improved crystallization
US8551802B2 (en) * 2011-09-12 2013-10-08 Intermolecular, Inc. Laser annealing for thin film solar cells
JP2013064108A (ja) * 2011-09-16 2013-04-11 Delsolar Co Ltd インク組成物及びその形成方法
ES2402313B1 (es) * 2011-09-30 2014-03-04 Universitat Jaume I De Castellón Tintas para la obtención "in situ" de calcógenos y/o calcogenuros que dan lugar a capas de semiconductores, su obtención y modo de empleo
EP2762444A4 (en) * 2011-09-30 2015-06-10 Toppan Printing Co Ltd INK FOR PRODUCING A COMPOSITE THIN-FINISHED LAYER AND PRODUCTION METHOD THEREFOR
EP2786419B1 (en) * 2011-11-30 2020-02-12 Konica Minolta Laboratory U.S.A., Inc. Method of manufacturing a photovoltaic device
US20130217211A1 (en) * 2012-02-21 2013-08-22 Aqt Solar, Inc. Controlled-Pressure Process for Production of CZTS Thin-Films
US9573809B2 (en) * 2012-03-30 2017-02-21 Micron Technology, Inc. Method of forming a metal chalcogenide material and methods of forming memory cells including same
EP2647595A2 (en) * 2012-04-03 2013-10-09 Neo Solar Power Corp. Ink composition, chalcogenide semiconductor film, photovoltaic device and methods for forming the same
WO2013172949A1 (en) * 2012-05-14 2013-11-21 E. I. Du Pont De Nemours And Company Dispersible metal chalcogenide nanoparticles
EP2870621B1 (en) 2012-07-09 2018-12-26 Nanoco Technologies, Ltd. Group 13 selenide nanoparticles
US8741688B2 (en) 2012-07-24 2014-06-03 Micron Technology, Inc. Methods of forming a metal chalcogenide material
FR2993792B1 (fr) * 2012-07-26 2017-09-15 Imra Europe Sas Film de chalcogenure(s) metallique(s) cristallise(s) a gros grains, solution colloidale de particules amorphes et procedes de preparation.
US8871560B2 (en) * 2012-08-09 2014-10-28 International Business Machines Corporation Plasma annealing of thin film solar cells
JP6008736B2 (ja) * 2012-12-26 2016-10-19 富士フイルム株式会社 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタおよび電子デバイス
KR101960945B1 (ko) * 2013-03-04 2019-03-20 나노코 테크놀로지스 리미티드 박막 태양 전지를 위한 구리-인듐-갈륨-칼코게나이드 나노 입자 전구체
CN108383090A (zh) * 2013-03-15 2018-08-10 纳米技术有限公司 Cu2XSnY4纳米粒子
KR101716367B1 (ko) * 2013-03-15 2017-03-14 나노코 테크놀로지스 리미티드 Cu2ZnSnS4 나노 입자들
US9634161B2 (en) 2013-05-01 2017-04-25 Delaware State University Nanoscale precursors for synthesis of Fe2(Si,Ge)(S,Se)4 crystalline particles and layers
US8999746B2 (en) 2013-08-08 2015-04-07 Tokyo Ohka Kogyo Co., Ltd. Method of forming metal chalcogenide dispersion, metal chalcogenide dispersion, method of producing light absorbing layer of solar cell, method of producing solar cell
WO2015030275A1 (ko) * 2013-08-30 2015-03-05 한국에너지기술연구원 이성분계 나노입자를 포함하는 슬러리의 숙성 단계가 도입된 ci(g)s계 박막의 제조방법 및 그 방법에 의해 제조된 ci(g)s계 박막
KR101650049B1 (ko) 2013-09-12 2016-08-22 주식회사 엘지화학 태양전지 광흡수층 제조용 금속 칼코게나이드 나노 입자 및 이의 제조방법
US10170651B2 (en) * 2014-01-30 2019-01-01 Nanoco Technologies Ltd. Metal-doped cu(In,Ga) (S,Se)2 nanoparticles
CN103803632B (zh) * 2014-02-28 2016-04-06 上海海事大学 一种碳包覆光热转换纳米材料的制备方法
US10888836B2 (en) * 2014-07-25 2021-01-12 Chemical and Metal Technologies LLC Extraction of target materials using CZTS sorbent
WO2016053016A1 (ko) * 2014-09-29 2016-04-07 이화여자대학교 산학협력단 ＣＺＴＳｅ계 박막 및 이의 제조 방법, 및 상기 ＣＺＴＳｅ계 박막을 이용한 태양전지
JP6554332B2 (ja) 2014-10-30 2019-07-31 東京応化工業株式会社 均一系塗布液及びその製造方法、太陽電池用光吸収層及びその製造方法、並びに太陽電池及びその製造方法
KR102412965B1 (ko) 2014-12-30 2022-06-24 삼성전자주식회사 2차원 물질층을 포함하는 전자소자 및 잉크젯 프린팅을 이용한 전자소자의 제조방법
US10767112B2 (en) * 2015-01-15 2020-09-08 The Trustees Of The Columbia University In The City Of New York Methods of producing metal sulfides, metal selenides, and metal sulfides/selenides having controlled architectures using kinetic control
KR101708260B1 (ko) * 2015-06-18 2017-02-20 연세대학교 산학협력단 전이금속 칼코겐화물 구조체 및 그 제조방법
FR3039531A1 (enExample) * 2015-07-28 2017-02-03 Nexdot
US10578572B2 (en) 2016-01-19 2020-03-03 Invensense, Inc. CMOS integrated microheater for a gas sensor device
US11631794B2 (en) 2016-05-25 2023-04-18 Nippon Shokubai Co., Ltd. Thermoelectric material, thermoelectric device, powder for thermoelectric material, and method for producing thermoelectric material
JP6793087B2 (ja) * 2016-05-25 2020-12-02 株式会社日本触媒 熱電変換材料、熱電変換素子、熱電変換材料用粉体、及び熱電変換材料の製造方法
CN106025056A (zh) * 2016-06-12 2016-10-12 电子科技大学 一种锡硫化合物热电材料的制备方法
US10217888B2 (en) * 2016-10-06 2019-02-26 International Business Machines Corporation Solution-phase inclusion of silver into chalcogenide semiconductor inks
EP3523248A1 (en) * 2016-10-07 2019-08-14 Haldor Topsøe A/S KESTERITE MATERIAL OF CZTS, CZTSe OR CZTSSe TYPE
CN106505114A (zh) * 2016-11-03 2017-03-15 中国科学院兰州化学物理研究所 一种铜锡硫光吸收层薄膜材料的制备方法
US10383967B2 (en) 2016-11-30 2019-08-20 Invensense, Inc. Substance sensing with tracers
CN108383150B (zh) * 2018-03-01 2020-10-30 复旦大学 一种硫化锌纳米材料的制备方法
CN108249475B (zh) * 2018-03-01 2020-10-30 复旦大学 一种铜铟硫纳米材料的简易制备方法
WO2019228620A1 (en) * 2018-05-30 2019-12-05 Toyota Motor Europe Inks comprising nanoparticles for high-performance inkjet-printed optoelectronics
RU2695208C1 (ru) * 2018-07-17 2019-07-22 Федеральное государственное бюджетное учреждение науки Институт проблем химической физики Российской академии наук (ИПХФ РАН) Способ получения монозеренных кестеритных порошков
RU2718124C1 (ru) * 2019-06-10 2020-03-30 Федеральное государственное бюджетное учреждение науки Институт проблем химической физики Российской Академии наук (ФГБУН ИПХФ РАН) Способ получения монозеренных кестеритных порошков из тройных халькогенидов меди и олова и соединений цинка
CN113013314B (zh) * 2019-12-20 2022-12-13 中国科学院上海硅酸盐研究所 一种p型高性能Cu-Sn-S类金刚石结构热电材料及其制备方法
CN115348948B (zh) * 2020-03-11 2024-11-08 约翰内斯堡威特沃特斯兰德大学 碱金属四元纳米材料
US11492547B2 (en) 2020-06-04 2022-11-08 UbiQD, Inc. Low-PH nanoparticles and ligands
CN111755323B (zh) * 2020-07-07 2023-07-21 内蒙古大学 一种铜锌锡硫太阳电池吸收层薄膜的制备方法
CN112142097B (zh) * 2020-08-31 2021-10-29 武汉理工大学 三水合锡酸镉及其制备方法和应用
CN112279293B (zh) * 2020-11-02 2023-08-25 贵州理工学院 一种硫化铜纳米材料的制备方法
CN113517370B (zh) * 2021-06-11 2022-10-14 上海应用技术大学 一种异质构型太阳能电池结构及其制备方法与应用
CN113371754B (zh) * 2021-06-23 2022-06-10 石久光学科技发展(北京)有限公司 一种高纯度锡酸镉粉体及其制备方法
CN114436318B (zh) * 2022-01-07 2023-10-31 安徽师范大学 一种水相合成制备单分散Cu2-xS纳米晶的方法
CN114759140B (zh) * 2022-04-13 2025-09-09 西北师范大学 一种铜锡硫（cts）忆阻器及其制备方法
CN114933327B (zh) * 2022-06-13 2023-12-01 佛山(华南)新材料研究院 一种制氢材料及其制备方法、应用

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2921661B1 (fr) * 2007-10-01 2013-05-31 Centre Nat Rech Scient Solide hybride organique inorganique a surface modifiee.
US20090305449A1 (en) * 2007-12-06 2009-12-10 Brent Bollman Methods and Devices For Processing A Precursor Layer In a Group VIA Environment

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Publication number Priority date Publication date Assignee Title
WO2014039937A1 (en) * 2012-09-07 2014-03-13 Cornell University Metal chalcogenide synthesis method and applications
US10752514B2 (en) 2012-09-07 2020-08-25 Cornell University Metal chalcogenide synthesis method and applications
KR20160041947A (ko) * 2013-08-09 2016-04-18 고쿠리츠다이가쿠호진 호쿠리쿠 센단 가가쿠 기쥬츠 다이가쿠인 다이가쿠 산화물 반도체층 및 그 제조방법, 그리고 산화물 반도체의 전구체, 산화물 반도체층, 반도체 소자, 및 전자 디바이스
KR20170041091A (ko) * 2015-10-06 2017-04-14 삼성전자주식회사 금속 칼코게나이드 나노입자 및 그 제조방법
KR101874227B1 (ko) * 2017-01-18 2018-08-02 한양대학교 에리카산학협력단 구리 칼코지나이드 광 흡수체 및 광 흡수 필름, 및 그들의 제조 방법.
KR20190055992A (ko) * 2017-11-16 2019-05-24 한국세라믹기술원 전이금속 칼코겐화합물을 이용한 전계 효과형 트랜지스터의 제조 방법

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