JP2013508544A5 - - Google Patents

Download PDF

Info

Publication number
JP2013508544A5
JP2013508544A5 JP2012534380A JP2012534380A JP2013508544A5 JP 2013508544 A5 JP2013508544 A5 JP 2013508544A5 JP 2012534380 A JP2012534380 A JP 2012534380A JP 2012534380 A JP2012534380 A JP 2012534380A JP 2013508544 A5 JP2013508544 A5 JP 2013508544A5
Authority
JP
Japan
Prior art keywords
precursor
substrate
zone
gas
excess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012534380A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013508544A (ja
JP5706903B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2010/052757 external-priority patent/WO2011047210A2/en
Publication of JP2013508544A publication Critical patent/JP2013508544A/ja
Publication of JP2013508544A5 publication Critical patent/JP2013508544A5/ja
Application granted granted Critical
Publication of JP5706903B2 publication Critical patent/JP5706903B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2012534380A 2009-10-14 2010-10-14 分離した前駆体ゾーン間の過剰な前駆体の運搬を抑えた原子層堆積システム Expired - Fee Related JP5706903B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25163909P 2009-10-14 2009-10-14
US61/251,639 2009-10-14
PCT/US2010/052757 WO2011047210A2 (en) 2009-10-14 2010-10-14 Inhibiting excess precursor transport between separate precursor zones in an atomic layer deposition system

Publications (3)

Publication Number Publication Date
JP2013508544A JP2013508544A (ja) 2013-03-07
JP2013508544A5 true JP2013508544A5 (https=) 2013-11-28
JP5706903B2 JP5706903B2 (ja) 2015-04-22

Family

ID=43876878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012534380A Expired - Fee Related JP5706903B2 (ja) 2009-10-14 2010-10-14 分離した前駆体ゾーン間の過剰な前駆体の運搬を抑えた原子層堆積システム

Country Status (7)

Country Link
US (1) US8637117B2 (https=)
EP (1) EP2488678B1 (https=)
JP (1) JP5706903B2 (https=)
KR (1) KR101714538B1 (https=)
CN (1) CN102639749B (https=)
BR (1) BR112012008642A2 (https=)
WO (1) WO2011047210A2 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101684546B (zh) * 2008-09-25 2012-05-23 鸿富锦精密工业(深圳)有限公司 软性基板镀膜治具
WO2012133541A1 (ja) * 2011-03-29 2012-10-04 凸版印刷株式会社 巻き取り成膜装置
JP5854681B2 (ja) * 2011-07-26 2016-02-09 古河電気工業株式会社 真空成膜装置用ケース付きリール、真空成膜装置及び薄膜積層体の製造方法
RU2600462C2 (ru) * 2012-06-15 2016-10-20 Пикосан Ой Покрытие полотна подложки осаждением атомных слоев
KR101372309B1 (ko) * 2012-08-07 2014-03-13 (주)씨엔원 롤투롤 방식의 원자층 증착 장비 및 원자층 증착 방법
JP6122136B2 (ja) * 2012-11-30 2017-04-26 エルジー・ケム・リミテッド 膜形成装置
CN103966572A (zh) * 2013-02-05 2014-08-06 王东君 卷对卷式原子层沉积设备及其使用方法
EP2765218A1 (en) * 2013-02-07 2014-08-13 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Method and apparatus for depositing atomic layers on a substrate
US9435028B2 (en) * 2013-05-06 2016-09-06 Lotus Applied Technology, Llc Plasma generation for thin film deposition on flexible substrates
KR20160032128A (ko) 2013-07-16 2016-03-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 필름의 롤 가공
CN104746046A (zh) * 2013-12-29 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 原子层沉积设备
JP6669070B2 (ja) * 2014-09-19 2020-03-18 凸版印刷株式会社 成膜装置及び成膜方法
JP2017533995A (ja) * 2014-10-17 2017-11-16 ロータス アプライド テクノロジー エルエルシーLotus Applied Technology, Llc 混合酸化バリア膜の高速堆積
JP6716129B2 (ja) * 2015-11-30 2020-07-01 気相成長株式会社 金属酸化物膜形成方法
TWI720181B (zh) * 2016-05-30 2021-03-01 日商新力股份有限公司 薄膜製造方法、薄膜製造裝置、光電轉換元件之製造方法、邏輯電路之製造方法、發光元件之製造方法及調光元件之製造方法
JP2019102483A (ja) * 2017-11-28 2019-06-24 東京エレクトロン株式会社 エッチング方法およびエッチング装置
CN109082648A (zh) * 2018-11-13 2018-12-25 北京工业大学 原子层沉积连续式双面镀膜的卷绕装置
JP7792901B2 (ja) * 2019-10-30 2025-12-26 アイクストロン、エスイー 炭素含有構造体を堆積するための装置及び方法
GB2588940B (en) * 2019-11-15 2022-06-22 Dyson Technology Ltd Sputter deposition
US20230212746A1 (en) * 2020-06-10 2023-07-06 3M Innovative Properties Company Roll-to-roll vapor deposition apparatus and method
US12180586B2 (en) 2021-08-13 2024-12-31 NanoMaster, Inc. Apparatus and methods for roll-to-roll (R2R) plasma enhanced/activated atomic layer deposition (PEALD/PAALD)

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2384500A (en) 1942-07-08 1945-09-11 Crown Cork & Seal Co Apparatus and method of coating
US2458394A (en) 1945-11-15 1949-01-04 Eastman Kodak Co Film processing unit
US3314393A (en) 1962-07-05 1967-04-18 Nippon Electric Co Vapor deposition device
US3379803A (en) 1964-05-04 1968-04-23 Union Carbide Corp Coating method and apparatus for deposition of polymer-forming vapor under vacuum
US3650042A (en) 1969-05-19 1972-03-21 Ibm Gas barrier for interconnecting and isolating two atmospheres
US3964434A (en) 1974-11-04 1976-06-22 Technicon Instruments Corporation Coating apparatus including liquid sealant between compartments
GB1596385A (en) 1976-12-29 1981-08-26 Matsushita Electric Industrial Co Ltd Methods and apparatus for manufacturing magnetic recording media
JPS6030124A (ja) 1983-07-28 1985-02-15 Fuji Electric Corp Res & Dev Ltd 多段電極型半導体薄膜生成装置
US4803947A (en) 1986-01-15 1989-02-14 Canon Kabushiki Kaisha Apparatus for forming deposited film
US4728406A (en) 1986-08-18 1988-03-01 Energy Conversion Devices, Inc. Method for plasma - coating a semiconductor body
JPH0395922A (ja) * 1989-09-07 1991-04-22 Canon Inc 半導体薄膜の形成方法
US5629054A (en) 1990-11-20 1997-05-13 Canon Kabushiki Kaisha Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
JP2975151B2 (ja) 1991-03-28 1999-11-10 キヤノン株式会社 半導体素子の連続的製造装置
JPH0578818A (ja) 1991-09-19 1993-03-30 Hitachi Cable Ltd 部分被膜の形成方法
IT1261918B (it) 1993-06-11 1996-06-04 Cetev Cent Tecnolog Vuoto Struttura per deposizione reattiva di metalli in impianti da vuoto continui e relativo processo.
US5411592A (en) 1994-06-06 1995-05-02 Ovonic Battery Company, Inc. Apparatus for deposition of thin-film, solid state batteries
US5817550A (en) 1996-03-05 1998-10-06 Regents Of The University Of California Method for formation of thin film transistors on plastic substrates
US6287988B1 (en) * 1997-03-18 2001-09-11 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device
US6576053B1 (en) 1999-10-06 2003-06-10 Samsung Electronics Co., Ltd. Method of forming thin film using atomic layer deposition method
JP4316767B2 (ja) 2000-03-22 2009-08-19 株式会社半導体エネルギー研究所 基板処理装置
US6660326B2 (en) * 2000-08-04 2003-12-09 Tomoegawa Paper Co. Ltd. Production method for monolayer powder film and production apparatus therefor
US7476420B2 (en) 2000-10-23 2009-01-13 Asm International N.V. Process for producing metal oxide films at low temperatures
DE60129461T2 (de) * 2000-12-20 2007-12-20 Yazaki Corp. Vorrichtung und entsprechendes verfahren zur schnellvernetzung von sol-gel-beschichtungen
US7077935B2 (en) * 2001-05-04 2006-07-18 General Atomics O2 and H2O barrier material
KR100492769B1 (ko) 2001-05-17 2005-06-07 주식회사 엘지이아이 수직챔버를 구비한 플라즈마중합 연속처리장치
WO2003008110A1 (en) 2001-07-18 2003-01-30 The Regents Of The University Of Colorado A method of depositing an inorganic film on an organic polymer
US6461436B1 (en) 2001-10-15 2002-10-08 Micron Technology, Inc. Apparatus and process of improving atomic layer deposition chamber performance
US6926572B2 (en) 2002-01-25 2005-08-09 Electronics And Telecommunications Research Institute Flat panel display device and method of forming passivation film in the flat panel display device
ES2263734T3 (es) 2002-03-15 2006-12-16 Vhf Technologies Sa Aparato y procedimiento para fabricar dispositivos semi-conductores flexibles.
US6821563B2 (en) 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
KR100512626B1 (ko) 2002-10-18 2005-09-02 엘지.필립스 엘시디 주식회사 유기전계발광소자 및 그 제조방법
US7404990B2 (en) * 2002-11-14 2008-07-29 Air Products And Chemicals, Inc. Non-thermal process for forming porous low dielectric constant films
AU2003292634A1 (en) 2002-12-26 2004-07-22 Applied Films Gmbh And Co. Kg Vacuum deposition apparatus and vapor-deposited film manufacturing method
US6888172B2 (en) 2003-04-11 2005-05-03 Eastman Kodak Company Apparatus and method for encapsulating an OLED formed on a flexible substrate
US20040261703A1 (en) 2003-06-27 2004-12-30 Jeffrey D. Chinn Apparatus and method for controlled application of reactive vapors to produce thin films and coatings
US20050113527A1 (en) * 2003-11-21 2005-05-26 Perrella Frank W. Crosslinking polymer composition
US7074719B2 (en) 2003-11-28 2006-07-11 International Business Machines Corporation ALD deposition of ruthenium
US20050172897A1 (en) 2004-02-09 2005-08-11 Frank Jansen Barrier layer process and arrangement
JP2006124784A (ja) 2004-10-29 2006-05-18 Canon Inc 真空装置および真空チャンバーの排気方法
KR100629172B1 (ko) * 2004-11-08 2006-09-27 삼성전자주식회사 막 형성 장치
WO2006093168A1 (ja) 2005-03-04 2006-09-08 Youtec Co., Ltd. Cvd装置と、それを用いた多層膜形成方法と、それにより形成された多層膜
US7547796B2 (en) * 2005-09-29 2009-06-16 Praxair Technology, Inc. Organometallic compounds, processes for the preparation thereof and methods of use thereof
CH697933B1 (de) 2005-11-03 2009-03-31 Tetra Laval Holdings & Finance Verfahren und Vorrichtung zur Beschichtung von Kunststofffolien mit einer Oxidschicht.
DE102005058869A1 (de) 2005-12-09 2007-06-14 Cis Solartechnik Gmbh & Co. Kg Verfahren und Vorrichtung zur Beschichtung von Bändern
EP2000008B1 (en) * 2006-03-26 2011-04-27 Lotus Applied Technology, Llc Atomic layer deposition system and method for coating flexible substrates
US7413982B2 (en) 2006-03-29 2008-08-19 Eastman Kodak Company Process for atomic layer deposition
US7456429B2 (en) * 2006-03-29 2008-11-25 Eastman Kodak Company Apparatus for atomic layer deposition
US20070281089A1 (en) * 2006-06-05 2007-12-06 General Electric Company Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects
WO2008016836A2 (en) * 2006-07-29 2008-02-07 Lotus Applied Technology, Llc Radical-enhanced atomic layer deposition system and method
US7976899B2 (en) 2006-10-23 2011-07-12 General Electric Company Methods for selective deposition of graded materials on continuously fed objects
CN101657564A (zh) 2007-02-12 2010-02-24 莲花应用技术有限责任公司 用原子层沉积制备复合材料
US7713874B2 (en) * 2007-05-02 2010-05-11 Asm America, Inc. Periodic plasma annealing in an ALD-type process
EP2011898B1 (en) * 2007-07-03 2021-04-07 Beneq Oy Method in depositing metal oxide materials
US8945675B2 (en) 2008-05-29 2015-02-03 Asm International N.V. Methods for forming conductive titanium oxide thin films
JP2012511106A (ja) 2008-12-05 2012-05-17 ロータス アプライド テクノロジー エルエルシー 改善されたバリア層の性質を有する薄膜の高速成膜

Similar Documents

Publication Publication Date Title
JP2013508544A5 (https=)
CN102639749B (zh) 在原子层沉积系统中抑制过量前体在单独前体区之间运送
JP2013520564A (ja) ウェブ基板堆積システム
JP6277277B2 (ja) 真空処理装置用の基板スプレッディングデバイス、基板スプレッディングデバイスを有する真空処理装置、及びそれを動作させる方法
EP2088220A4 (en) COATING DEVICE AND METHOD FOR PRODUCING A FILM BY USING THE COATING DEVICE
JP2019513189A5 (https=)
TW201139725A (en) Film deposition apparatus, film deposition method, and storage medium
JP2016540124A5 (https=)
JP2012519773A5 (https=)
WO2016078693A1 (en) Masking arrangement with separate mask for a coating process and web coating installation
EP3237650B1 (en) Ald method and apparatus
CN102016103B (zh) 薄膜形成方法及成膜装置
CN106917074A (zh) 一种循环卷绕式原子层沉积设备
TW201214602A (en) A system and a method for processing a flexible substrate
CN107406980B (zh) 用于涂覆基底表面的喷嘴头和设备
KR101296225B1 (ko) 섬유원단의 양면에 보호피막을 형성하는 방법과 이에 의해 제조된 섬유원단 및 이를 위한 시스템
KR20140121664A (ko) 롤투롤 방식의 박막 제작 장치
JP6144462B2 (ja) 光照射装置及び光照射方法
JP2020527195A (ja) 真空チャンバ用の熱処理装置、可撓性基板上に材料を堆積させる堆積装置、真空チャンバ内での可撓性基板の熱処理方法、および可撓性基板の処理方法
JP5724504B2 (ja) 原子層堆積法成膜装置における回転ドラムおよび原子層堆積法成膜装置
JP2012201900A (ja) 成膜装置
CN107109646A (zh) Ald 方法和包括光子源的设备
JP5531706B2 (ja) エンボス化粧シートの製造装置およびエンボス化粧シートの製造方法
JP5733507B2 (ja) 成膜方法
JP2023553201A (ja) ロール・ツー・ロール処理