CN107406980B - 用于涂覆基底表面的喷嘴头和设备 - Google Patents
用于涂覆基底表面的喷嘴头和设备 Download PDFInfo
- Publication number
- CN107406980B CN107406980B CN201580076499.7A CN201580076499A CN107406980B CN 107406980 B CN107406980 B CN 107406980B CN 201580076499 A CN201580076499 A CN 201580076499A CN 107406980 B CN107406980 B CN 107406980B
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- CN
- China
- Prior art keywords
- precursor
- nozzle
- output face
- nozzle head
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Coating Apparatus (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
Description
Claims (29)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20146132 | 2014-12-22 | ||
FI20146132A FI126894B (en) | 2014-12-22 | 2014-12-22 | Nozzle head, apparatus and method for coating a substrate surface |
PCT/FI2015/050923 WO2016102771A1 (en) | 2014-12-22 | 2015-12-21 | Nozzle head and apparatus for coating substrate surface |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107406980A CN107406980A (zh) | 2017-11-28 |
CN107406980B true CN107406980B (zh) | 2020-11-13 |
Family
ID=56149321
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580076499.7A Active CN107406980B (zh) | 2014-12-22 | 2015-12-21 | 用于涂覆基底表面的喷嘴头和设备 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10280508B2 (zh) |
CN (1) | CN107406980B (zh) |
DE (1) | DE112015005723T5 (zh) |
FI (1) | FI126894B (zh) |
WO (1) | WO2016102771A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI126894B (en) * | 2014-12-22 | 2017-07-31 | Beneq Oy | Nozzle head, apparatus and method for coating a substrate surface |
FI127502B (en) * | 2016-06-30 | 2018-07-31 | Beneq Oy | Method and apparatus for coating a substrate |
KR102595355B1 (ko) * | 2017-12-28 | 2023-10-30 | 삼성디스플레이 주식회사 | 증착 장치 및 그것을 이용한 증착 방법 |
FI129731B (en) * | 2018-04-16 | 2022-08-15 | Beneq Oy | Nozzle head, apparatus and procedure |
US20210402430A1 (en) * | 2020-06-26 | 2021-12-30 | Illinois Tool Works Inc. | Systems and methods for grafting a molecular code onto a material by an atmospheric plasma treatment |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2335628B (en) * | 1998-03-19 | 2001-09-05 | The Technology Partnership Plc | Droplet generator and method of operating a droplet generator |
US7997288B2 (en) * | 2002-09-30 | 2011-08-16 | Lam Research Corporation | Single phase proximity head having a controlled meniscus for treating a substrate |
WO2007112370A1 (en) | 2006-03-26 | 2007-10-04 | Lotus Applied Technology, Llc | Atomic layer deposition system and method for coating flexible substrates |
US7524226B2 (en) * | 2006-10-10 | 2009-04-28 | Eastman Kodak Company | OLED display device with adjusted filter array |
US8182608B2 (en) | 2007-09-26 | 2012-05-22 | Eastman Kodak Company | Deposition system for thin film formation |
US7972898B2 (en) * | 2007-09-26 | 2011-07-05 | Eastman Kodak Company | Process for making doped zinc oxide |
US8333839B2 (en) | 2007-12-27 | 2012-12-18 | Synos Technology, Inc. | Vapor deposition reactor |
US20100037820A1 (en) | 2008-08-13 | 2010-02-18 | Synos Technology, Inc. | Vapor Deposition Reactor |
FI20095307A0 (fi) | 2009-03-25 | 2009-03-25 | Beneq Oy | Päällystysmenetelmä ja -laitteisto |
FI20095947A0 (fi) * | 2009-09-14 | 2009-09-14 | Beneq Oy | Monikerrospinnoite, menetelmä monikerrospinnoitteen valmistamiseksi, ja sen käyttötapoja |
TWI541378B (zh) * | 2010-10-16 | 2016-07-11 | 奧特科技公司 | 原子層沉積鍍膜系統及方法 |
JP5768962B2 (ja) | 2011-03-23 | 2015-08-26 | 凸版印刷株式会社 | 原子層堆積法成膜装置における成膜処理ドラム |
EP2557198A1 (en) | 2011-08-10 | 2013-02-13 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method and apparatus for depositing atomic layers on a substrate |
FI123320B (en) * | 2012-02-17 | 2013-02-28 | Beneq Oy | Nozzle and nozzle head |
KR20130142869A (ko) | 2012-06-20 | 2013-12-30 | 주식회사 엠티에스나노테크 | 원자층 증착 장치 및 방법 |
WO2014197396A1 (en) * | 2013-06-03 | 2014-12-11 | Ultratech, Inc. | Gas deposition head for spatial ald |
JP6323655B2 (ja) * | 2014-01-14 | 2018-05-16 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射ヘッドユニット、液体噴射ラインヘッド及び液体噴射装置 |
FI126894B (en) * | 2014-12-22 | 2017-07-31 | Beneq Oy | Nozzle head, apparatus and method for coating a substrate surface |
-
2014
- 2014-12-22 FI FI20146132A patent/FI126894B/en active IP Right Grant
-
2015
- 2015-12-21 CN CN201580076499.7A patent/CN107406980B/zh active Active
- 2015-12-21 WO PCT/FI2015/050923 patent/WO2016102771A1/en active Application Filing
- 2015-12-21 US US15/533,825 patent/US10280508B2/en active Active
- 2015-12-21 DE DE112015005723.4T patent/DE112015005723T5/de active Pending
Also Published As
Publication number | Publication date |
---|---|
US20170362706A1 (en) | 2017-12-21 |
FI126894B (en) | 2017-07-31 |
DE112015005723T5 (de) | 2017-09-14 |
CN107406980A (zh) | 2017-11-28 |
WO2016102771A1 (en) | 2016-06-30 |
FI20146132A (fi) | 2016-06-23 |
US10280508B2 (en) | 2019-05-07 |
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Legal Events
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SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Espoo, Finland Patentee after: BENEQ Group Ltd. Address before: Espoo, Finland Patentee before: BENEQ OY |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220825 Address after: Espoo, Finland Patentee after: BENEQ OY Address before: Espoo, Finland Patentee before: BENEQ Group Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230423 Address after: Room 205-5-7, 2nd Floor, East Office Building, No. 45 Beijing Road, Qianwan Bonded Port Area, Qingdao, Shandong Province, China (Shandong) Pilot Free Trade Zone (A) Patentee after: QINGDAO SIFANG SRI INTELLIGENT TECHNOLOGY Co.,Ltd. Address before: Espoo, Finland Patentee before: BENEQ OY |
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TR01 | Transfer of patent right |