JP2013508544A - 分離した前駆体ゾーン間の過剰な前駆体の運搬を抑えた原子層堆積システム - Google Patents
分離した前駆体ゾーン間の過剰な前駆体の運搬を抑えた原子層堆積システム Download PDFInfo
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Abstract
【選択図】図5
Description
Claims (24)
- 基板上に薄膜を堆積させる方法であって、
第1の前駆体ゾーンに第1の前駆体ガスを導入し、
前記第1の前駆体ゾーンから離間した第2の前駆体ゾーンに、前記第1の前駆体ガスとは異なる第2の前駆体ガスを導入し、
前記第1の前駆体ゾーンと前記第2の前駆体ゾーンとの間に配置される隔離ゾーンに、不活性ガスを導入し、
前記基板と各前記前駆体ゾーンとを相対移動させて、前記基板の表面を、前記第1の前駆体ガス、前記不活性ガス、前記第2の前駆体ガス、前記不活性ガスの順に露出させ、前記第1の前駆体ガスに対する前記表面の露出により、前記表面上に前記第1の前駆体ガスの化学吸着した部分と、第1の前駆体ガスの前記表面上に化学吸着されていない過剰の部分とを残し、
前記基板の表面が前記不活性ガスに露出されている間に、化学吸着されていない過剰の第1の前駆体を前記表面から積極的に除去して、化学吸着されていない過剰の第1の前駆体が、前記表面に化学吸着した第1の前駆体とともに前記第2の前駆体ゾーンへ侵入することを防止し、
前記基板が前記第2の前駆体ガスに露出されるときに、前記表面で前記第2の前駆体ガスが化学吸着した前記第1の前駆体に反応して、その上に薄膜を堆積することを特徴とする方法。 - 前記相対的な運動が、前記第1と第2の前駆体ゾーンの間を、交互に連続して複数回、基板を移動させることにより行われ、前記第1の前駆体ガス、前記不活性ガス、前記第2の前駆体ガス、前記不活性ガスの順で露出を繰り返す請求項1記載の方法。
- 化学吸着されていない過剰の前駆体の除去が、前記基板のそれぞれの部分を、該基板が熱または電磁放射によって分解されない程度に十分に短い時間、熱または電磁放射に露出させることにより行われる請求項1記載の方法。
- 化学吸着されていない過剰の前駆体の除去が、前記表面をプラズマに露出させることにより行われる請求項1記載の方法。
- 化学吸着されていない過剰の前駆体の除去が、前記表面を加熱することにより行われる請求項1記載の方法。
- 化学吸着されていない過剰の前駆体の除去が、前記表面を赤外線に露出させることにより行われる請求項1記載の方法。
- 化学吸着されていない過剰の前駆体の除去が、前記表面をマイクロ波放射線に露出させることにより行われる請求項1記載の方法。
- 化学吸着されていない過剰の前駆体の除去が、前記表面を、前記第1の前駆体とともに共沸混合物を形成する材料に露出させることにより行われる請求項1記載の方法。
- 前記基板はフレキシブルなウェブであり、
相対移動の付与は、前記フレキシブルな基板を、前記第1と第2の前駆体ゾーンの間で交互に連続して前後に運搬することにより行われ、前記基板は前記第1と第2の前駆体ゾーンと前記隔離ゾーンとを複数回通って移動する請求項1記載の方法。 - 前記基板が、50℃を超える内部温度で分解するポリマーフィルムである請求項1〜9の何れか1項に記載の方法。
- 前記基板が、150℃を超える内部温度で分解する材料を含む請求項1〜10の何れか1項に記載の方法。
- 化学吸着されていない過剰の前駆体の除去が、前記基板のそれぞれの部分を、該基板を分解させずに、局所的に温度を150℃超にまで上昇させるように操作可能な、定常的な熱源または電磁放射器に、短時間露出させることにより行われる請求項1〜11の何れか1項に記載の方法。
- 基板上に薄膜を堆積させるシステムであって、
システムの使用時に、第1の前駆体ガスが導入される第1の前駆体ゾーンと、
システムの使用時に、前記第1の前駆体ガスとは異なる第2の前駆体ガスが導入される第2の前駆体ゾーンと、
前記第1の前駆体ゾーンと前記第2の前駆体ゾーンとの間に配置され、システムの使用時に、不活性ガスが導入される隔離ゾーンと、
前記基板とそれぞれの前記前駆体ゾーンとを相対移動させ、前記基板の表面を、前記第1の前駆体ガス、前記不活性ガス、前記第2の前駆体ガスの順に露出させる運搬機構と、
前記第1と第2の前駆体ゾーンの間に配置され、前記基板の表面から化学吸着されていない過剰の第1の前駆体を除去するとともに、不活性ガスと協働して、化学吸着されていない過剰の第1の前駆体が前記第2の前駆体ゾーンに侵入するのを防止する過剰の前駆体を除去する機構と、を有するシステム。 - 前記運搬機構が、交互に連続して、前記表面を、前記第1と第2の前駆体ゾーンの間で繰り返し移動させる請求項13記載のシステム。
- 前記過剰の前駆体を除去する機構は、前記第2の前駆体ゾーンから離間されるとともに、前記基板の表面が前記第2の前駆体ゾーンに向けて運搬される際に前記基板の表面が前記第1の前駆体ゾーンから出る位置に隣接する前記隔離ゾーン内に配置される請求項14記載のシステム。
- 前記過剰の前駆体を除去する機構が、定常的に作動し、
前記運搬機構により与えられる相対的な運動が、前記表面を、前記過剰の前駆体を除去する機構に瞬間的に露出させる請求項13記載のシステム。 - 前記過剰の前駆体を除去する機構が、プラズマ発生器を備える請求項13記載のシステム。
- 前記過剰の前駆体を除去する機構が、ヒーターを備える請求項13記載のシステム。
- 前記ヒーターが、前記第1の前駆体により吸収される波長の放射線を発生する赤外線発生源を備える請求項18記載のシステム。
- 前記過剰の前駆体を除去する機構が、マイクロ波発生源を備える請求項13記載のシステム。
- 前記過剰の前駆体を除去する機構が、前記第1の前駆体とともに共沸混合物を形成する材料の供給源を備える請求項13記載のシステム。
- 前記過剰の前駆体を除去する機構が、さらにヒーターを備える請求項21記載のシステム。
- 前記基板はフレキシブルなポリマーウェブからなり、
前記運搬機構は、
コイルから前記基板を巻き出す送出スプールと、
前記第1と第2の前駆体ゾーンに沿って離間され、前記フレキシブルな基板を、前記隔離ゾーンの一連の制限流路を通して、前記第1と第2の前駆体ゾーンの間で前後に案内して、前記基板を、前記第1と第2の前駆体ゾーンおよび前記隔離ゾーンを通して複数回移動させる一連の回転ガイドと、
前記基板を巻き取る巻取りスプールと、を有し、
前記過剰の前駆体を除去する機構は、前記第2の前駆体ゾーンから離間されるとともに、前記第2の前駆体ゾーンに向けて運搬される際に前記第1の前駆体ゾーンから出るときに前記基板が通過する通路に隣接する前記隔離ゾーンに配置される請求項13記載のシステム。 - 前記第2の前駆体ゾーンに接続されるポンプをさらに有する請求項13記載のシステム。
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PCT/US2010/052757 WO2011047210A2 (en) | 2009-10-14 | 2010-10-14 | Inhibiting excess precursor transport between separate precursor zones in an atomic layer deposition system |
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---|---|---|---|---|
WO2016043277A1 (ja) * | 2014-09-19 | 2016-03-24 | 凸版印刷株式会社 | 成膜装置及び成膜方法 |
JP2017101262A (ja) * | 2015-11-30 | 2017-06-08 | 気相成長株式会社 | 金属酸化物膜形成方法 |
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CN101684546B (zh) * | 2008-09-25 | 2012-05-23 | 鸿富锦精密工业(深圳)有限公司 | 软性基板镀膜治具 |
KR101935621B1 (ko) * | 2011-03-29 | 2019-01-04 | 도판 인사츠 가부시키가이샤 | 권취 성막 장치 |
JP5854681B2 (ja) * | 2011-07-26 | 2016-02-09 | 古河電気工業株式会社 | 真空成膜装置用ケース付きリール、真空成膜装置及び薄膜積層体の製造方法 |
KR20150023016A (ko) * | 2012-06-15 | 2015-03-04 | 피코순 오와이 | 원자층 퇴적에 의한 기판 웹 코팅 |
KR101372309B1 (ko) * | 2012-08-07 | 2014-03-13 | (주)씨엔원 | 롤투롤 방식의 원자층 증착 장비 및 원자층 증착 방법 |
US9631275B2 (en) | 2012-11-30 | 2017-04-25 | Lg Chem, Ltd. | Device for forming a layer |
CN103966572A (zh) * | 2013-02-05 | 2014-08-06 | 王东君 | 卷对卷式原子层沉积设备及其使用方法 |
EP2765218A1 (en) * | 2013-02-07 | 2014-08-13 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Method and apparatus for depositing atomic layers on a substrate |
US9435028B2 (en) * | 2013-05-06 | 2016-09-06 | Lotus Applied Technology, Llc | Plasma generation for thin film deposition on flexible substrates |
WO2015009779A1 (en) | 2013-07-16 | 2015-01-22 | 3M Innovative Properties Company | Roll processing of film |
CN104746046A (zh) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 原子层沉积设备 |
KR20170069229A (ko) * | 2014-10-17 | 2017-06-20 | 로터스 어플라이드 테크놀로지, 엘엘씨 | 혼합 산화물 장벽 피막의 고속 증착 |
TWI720181B (zh) * | 2016-05-30 | 2021-03-01 | 日商新力股份有限公司 | 薄膜製造方法、薄膜製造裝置、光電轉換元件之製造方法、邏輯電路之製造方法、發光元件之製造方法及調光元件之製造方法 |
JP2019102483A (ja) * | 2017-11-28 | 2019-06-24 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
CN109082648A (zh) * | 2018-11-13 | 2018-12-25 | 北京工业大学 | 原子层沉积连续式双面镀膜的卷绕装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008057625A2 (en) * | 2006-06-05 | 2008-05-15 | General Electric Company | Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects |
Family Cites Families (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2384500A (en) | 1942-07-08 | 1945-09-11 | Crown Cork & Seal Co | Apparatus and method of coating |
US2458394A (en) | 1945-11-15 | 1949-01-04 | Eastman Kodak Co | Film processing unit |
US3314393A (en) | 1962-07-05 | 1967-04-18 | Nippon Electric Co | Vapor deposition device |
US3379803A (en) | 1964-05-04 | 1968-04-23 | Union Carbide Corp | Coating method and apparatus for deposition of polymer-forming vapor under vacuum |
US3650042A (en) | 1969-05-19 | 1972-03-21 | Ibm | Gas barrier for interconnecting and isolating two atmospheres |
US3964434A (en) | 1974-11-04 | 1976-06-22 | Technicon Instruments Corporation | Coating apparatus including liquid sealant between compartments |
GB1596385A (en) | 1976-12-29 | 1981-08-26 | Matsushita Electric Ind Co Ltd | Methods and apparatus for manufacturing magnetic recording media |
JPS6030124A (ja) | 1983-07-28 | 1985-02-15 | Fuji Electric Corp Res & Dev Ltd | 多段電極型半導体薄膜生成装置 |
US4803947A (en) | 1986-01-15 | 1989-02-14 | Canon Kabushiki Kaisha | Apparatus for forming deposited film |
US4728406A (en) | 1986-08-18 | 1988-03-01 | Energy Conversion Devices, Inc. | Method for plasma - coating a semiconductor body |
JPH0395922A (ja) * | 1989-09-07 | 1991-04-22 | Canon Inc | 半導体薄膜の形成方法 |
US5629054A (en) | 1990-11-20 | 1997-05-13 | Canon Kabushiki Kaisha | Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method |
JP2975151B2 (ja) | 1991-03-28 | 1999-11-10 | キヤノン株式会社 | 半導体素子の連続的製造装置 |
JPH0578818A (ja) | 1991-09-19 | 1993-03-30 | Hitachi Cable Ltd | 部分被膜の形成方法 |
IT1261918B (it) | 1993-06-11 | 1996-06-04 | Cetev Cent Tecnolog Vuoto | Struttura per deposizione reattiva di metalli in impianti da vuoto continui e relativo processo. |
US5411592A (en) | 1994-06-06 | 1995-05-02 | Ovonic Battery Company, Inc. | Apparatus for deposition of thin-film, solid state batteries |
US5817550A (en) | 1996-03-05 | 1998-10-06 | Regents Of The University Of California | Method for formation of thin film transistors on plastic substrates |
US6287988B1 (en) * | 1997-03-18 | 2001-09-11 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device |
US6576053B1 (en) | 1999-10-06 | 2003-06-10 | Samsung Electronics Co., Ltd. | Method of forming thin film using atomic layer deposition method |
JP4316767B2 (ja) | 2000-03-22 | 2009-08-19 | 株式会社半導体エネルギー研究所 | 基板処理装置 |
US6660326B2 (en) * | 2000-08-04 | 2003-12-09 | Tomoegawa Paper Co. Ltd. | Production method for monolayer powder film and production apparatus therefor |
US7476420B2 (en) | 2000-10-23 | 2009-01-13 | Asm International N.V. | Process for producing metal oxide films at low temperatures |
ATE367565T1 (de) * | 2000-12-20 | 2007-08-15 | Yazaki Corp | Vorrichtung und entsprechendes verfahren zur schnellvernetzung von sol-gel-beschichtungen |
US7077935B2 (en) * | 2001-05-04 | 2006-07-18 | General Atomics | O2 and H2O barrier material |
KR100492769B1 (ko) | 2001-05-17 | 2005-06-07 | 주식회사 엘지이아이 | 수직챔버를 구비한 플라즈마중합 연속처리장치 |
US9376750B2 (en) | 2001-07-18 | 2016-06-28 | Regents Of The University Of Colorado, A Body Corporate | Method of depositing an inorganic film on an organic polymer |
US6461436B1 (en) | 2001-10-15 | 2002-10-08 | Micron Technology, Inc. | Apparatus and process of improving atomic layer deposition chamber performance |
US6926572B2 (en) | 2002-01-25 | 2005-08-09 | Electronics And Telecommunications Research Institute | Flat panel display device and method of forming passivation film in the flat panel display device |
EP1347077B1 (en) | 2002-03-15 | 2006-05-17 | VHF Technologies SA | Apparatus and method for the production of flexible semiconductor devices |
US6821563B2 (en) | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
KR100512626B1 (ko) | 2002-10-18 | 2005-09-02 | 엘지.필립스 엘시디 주식회사 | 유기전계발광소자 및 그 제조방법 |
US7404990B2 (en) * | 2002-11-14 | 2008-07-29 | Air Products And Chemicals, Inc. | Non-thermal process for forming porous low dielectric constant films |
IN266855B (ja) | 2002-12-26 | 2015-06-09 | Toppan Printing Co Ltd | |
US6888172B2 (en) | 2003-04-11 | 2005-05-03 | Eastman Kodak Company | Apparatus and method for encapsulating an OLED formed on a flexible substrate |
US20040261703A1 (en) | 2003-06-27 | 2004-12-30 | Jeffrey D. Chinn | Apparatus and method for controlled application of reactive vapors to produce thin films and coatings |
US20050113527A1 (en) * | 2003-11-21 | 2005-05-26 | Perrella Frank W. | Crosslinking polymer composition |
US7074719B2 (en) | 2003-11-28 | 2006-07-11 | International Business Machines Corporation | ALD deposition of ruthenium |
US20050172897A1 (en) | 2004-02-09 | 2005-08-11 | Frank Jansen | Barrier layer process and arrangement |
JP2006124784A (ja) | 2004-10-29 | 2006-05-18 | Canon Inc | 真空装置および真空チャンバーの排気方法 |
KR100629172B1 (ko) * | 2004-11-08 | 2006-09-27 | 삼성전자주식회사 | 막 형성 장치 |
JPWO2006093168A1 (ja) | 2005-03-04 | 2008-08-07 | 株式会社ユーテック | Cvd装置と、それを用いた多層膜形成方法と、それにより形成された多層膜 |
US7547796B2 (en) * | 2005-09-29 | 2009-06-16 | Praxair Technology, Inc. | Organometallic compounds, processes for the preparation thereof and methods of use thereof |
CH697933B1 (de) | 2005-11-03 | 2009-03-31 | Tetra Laval Holdings & Finance | Verfahren und Vorrichtung zur Beschichtung von Kunststofffolien mit einer Oxidschicht. |
DE102005058869A1 (de) | 2005-12-09 | 2007-06-14 | Cis Solartechnik Gmbh & Co. Kg | Verfahren und Vorrichtung zur Beschichtung von Bändern |
ES2361661T3 (es) | 2006-03-26 | 2011-06-21 | Lotus Applied Technology, Llc | Dispositivo y procedimiento de deposición de capas atómicas y método de revestimiento de substratos flexibles. |
US7413982B2 (en) | 2006-03-29 | 2008-08-19 | Eastman Kodak Company | Process for atomic layer deposition |
US7456429B2 (en) | 2006-03-29 | 2008-11-25 | Eastman Kodak Company | Apparatus for atomic layer deposition |
US8187679B2 (en) | 2006-07-29 | 2012-05-29 | Lotus Applied Technology, Llc | Radical-enhanced atomic layer deposition system and method |
US7976899B2 (en) | 2006-10-23 | 2011-07-12 | General Electric Company | Methods for selective deposition of graded materials on continuously fed objects |
US7923068B2 (en) | 2007-02-12 | 2011-04-12 | Lotus Applied Technology, Llc | Fabrication of composite materials using atomic layer deposition |
US7713874B2 (en) * | 2007-05-02 | 2010-05-11 | Asm America, Inc. | Periodic plasma annealing in an ALD-type process |
EP2011898B1 (en) * | 2007-07-03 | 2021-04-07 | Beneq Oy | Method in depositing metal oxide materials |
US8945675B2 (en) | 2008-05-29 | 2015-02-03 | Asm International N.V. | Methods for forming conductive titanium oxide thin films |
BRPI0922795A2 (pt) | 2008-12-05 | 2018-05-29 | Lotus Applied Tech Llc | alta taxa de deposição de filmes finos com propriedades de camada de barreira melhorada |
-
2010
- 2010-10-14 CN CN201080056514.9A patent/CN102639749B/zh active Active
- 2010-10-14 WO PCT/US2010/052757 patent/WO2011047210A2/en active Application Filing
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- 2010-10-14 BR BR112012008642A patent/BR112012008642A2/pt not_active Application Discontinuation
- 2010-10-14 US US12/905,045 patent/US8637117B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008057625A2 (en) * | 2006-06-05 | 2008-05-15 | General Electric Company | Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016043277A1 (ja) * | 2014-09-19 | 2016-03-24 | 凸版印刷株式会社 | 成膜装置及び成膜方法 |
JPWO2016043277A1 (ja) * | 2014-09-19 | 2017-06-29 | 凸版印刷株式会社 | 成膜装置及び成膜方法 |
JP2017101262A (ja) * | 2015-11-30 | 2017-06-08 | 気相成長株式会社 | 金属酸化物膜形成方法 |
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US8637117B2 (en) | 2014-01-28 |
US20110256323A1 (en) | 2011-10-20 |
WO2011047210A3 (en) | 2011-07-07 |
CN102639749B (zh) | 2015-06-17 |
KR20120085260A (ko) | 2012-07-31 |
CN102639749A (zh) | 2012-08-15 |
BR112012008642A2 (pt) | 2017-06-13 |
EP2488678B1 (en) | 2019-01-16 |
KR101714538B1 (ko) | 2017-03-09 |
JP5706903B2 (ja) | 2015-04-22 |
EP2488678A4 (en) | 2016-03-02 |
EP2488678A2 (en) | 2012-08-22 |
WO2011047210A2 (en) | 2011-04-21 |
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