JP5706903B2 - 分離した前駆体ゾーン間の過剰な前駆体の運搬を抑えた原子層堆積システム - Google Patents
分離した前駆体ゾーン間の過剰な前駆体の運搬を抑えた原子層堆積システム Download PDFInfo
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- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Description
Claims (24)
- 基板上に薄膜を堆積させる方法であって、
第1の前駆体ゾーンに第1の前駆体ガスを導入し、
前記第1の前駆体ゾーンから離間した第2の前駆体ゾーンに、前記第1の前駆体ガスとは異なる第2の前駆体ガスを導入し、
前記基板と各前記前駆体ゾーンとを相対移動させて、該基板を、前記第1の前駆体ゾーン、不活性ガスが供給された隔離ゾーン、前記第2の前駆体ゾーンの順に露出させ、
前記第1の前駆体ゾーンにおいて前記第1の前駆体ガスに前記基板の表面を露出させて、前記表面上に前記第1の前駆体ガスの化学吸着した部分と、第1の前駆体ガスの前記表面上に化学吸着されていない過剰の部分とを残し、
前記隔離ゾーンに入った後、前記表面のそれぞれの部分を、前記基板が前記第1または第2の前駆体ゾーンを出て前記隔離ゾーンに入る位置に隣接する前記隔離ゾーンの第1の領域内に配置された過剰の前駆体を除去する機構により、完全に印加されるエネルギーに瞬間的に露出させ、次いで前記第1の領域とは分離した前記隔離ゾーンの第2の領域内の不活性ガスに露出させて、化学吸着されていない過剰の前駆体の除去を瞬間的に行い、
前記第2の前駆体ゾーンにおいて前記第2の前駆体ガスに前記化学吸着した部分を露出させて、前記化学吸着した部分に前記第2の前駆体ガスを反応させることにより、
前記基板の表面に前記薄膜を形成することを特徴とする方法。 - 前記相対的な運動が、前記第1と第2の前駆体ゾーンの間を、交互に連続して複数回、基板を移動させることにより行われ、前記第1の前駆体ガス、前記不活性ガス、前記第2の前駆体ガス、前記不活性ガスの順で露出を繰り返す請求項1記載の方法。
- 前記表面のそれぞれの部分のエネルギーへの瞬間的な露出が、前記基板のそれぞれの部分を、該基板が熱または電磁放射によって分解されない程度に十分に短い時間、熱または電磁放射に露出させることにより行われる請求項1記載の方法。
- 前記表面のそれぞれの部分のエネルギーへの瞬間的な露出が、前記表面をプラズマに露出させることにより行われる請求項1記載の方法。
- 前記表面のそれぞれの部分のエネルギーへの瞬間的な露出が、前記表面を加熱することにより行われる請求項1記載の方法。
- 前記表面のそれぞれの部分のエネルギーへの瞬間的な露出が、前記表面を赤外線に露出させることにより行われる請求項1記載の方法。
- 前記表面のそれぞれの部分のエネルギーへの瞬間的な露出が、前記表面をマイクロ波放射線に露出させることにより行われる請求項1記載の方法。
- 前記表面のそれぞれの部分のエネルギーへの瞬間的な露出が、前記表面を、前記第1の前駆体とともに共沸混合物を形成する材料に露出させることにより行われる請求項1記載の方法。
- 前記基板はフレキシブルなウェブであり、
相対移動の付与は、前記フレキシブルな基板を、前記第1と第2の前駆体ゾーンの間で交互に連続して前後に運搬することにより行われ、前記基板は前記第1と第2の前駆体ゾーンと前記隔離ゾーンとを複数回通って移動する請求項1記載の方法。 - 前記基板が、摂氏50度を超える内部温度で分解するポリマーフィルムである請求項1〜9の何れか1項に記載の方法。
- 前記基板が、摂氏150度を超える内部温度で分解する材料を含む請求項1〜10の何れか1項に記載の方法。
- 化学吸着されていない過剰の前駆体の除去が、前記基板のそれぞれの部分を、該基板を分解させずに、局所的に温度を摂氏150度超にまで上昇させるように操作可能な、定常的な熱源または電磁放射器に、短時間露出させることにより行われる請求項1〜11の何れか1項に記載の方法。
- 基板上に薄膜を堆積させるシステムであって、
システムの使用時に、第1の前駆体ガスが導入される第1の前駆体ゾーンと、
システムの使用時に、前記第1の前駆体ガスとは異なる第2の前駆体ガスが導入される第2の前駆体ゾーンと、
前記第1の前駆体ゾーンと前記第2の前駆体ゾーンとの間に配置され、システムの使用時に、不活性ガスが導入される隔離ゾーンと、
前記基板とそれぞれの前記前駆体ゾーンとを相対移動させ、前記基板の表面を、前記第1の前駆体ガス、前記不活性ガス、前記第2の前駆体ガスの順に露出させる運搬機構と、
前記第1と第2の前駆体ゾーンの間に配置され、前記基板の表面にエネルギーを印加して該基板の表面から化学吸着されていない過剰の第1の前駆体を除去するとともに、不活性ガスと協働して、前記基板の表面から除去された前記化学吸着されていない過剰の第1の前駆体が前記第2の前駆体ゾーンに侵入するのを防止する過剰の前駆体を除去する機構と、を有するシステム。 - 前記運搬機構が、交互に連続して、前記表面を、前記第1と第2の前駆体ゾーンの間で繰り返し移動させる請求項13記載のシステム。
- 前記過剰の前駆体を除去する機構は、前記第2の前駆体ゾーンから離間されるとともに、前記基板の表面が前記第2の前駆体ゾーンに向けて運搬される際に前記基板の表面が前記第1の前駆体ゾーンから出る位置に隣接する前記隔離ゾーン内に配置される請求項14記載のシステム。
- 前記過剰の前駆体を除去する機構が、定常的に作動し、
前記運搬機構により与えられる相対的な運動が、前記表面を、前記過剰の前駆体を除去する機構に瞬間的に露出させる請求項13記載のシステム。 - 前記過剰の前駆体を除去する機構が、プラズマ発生器を備える請求項13記載のシステム。
- 前記過剰の前駆体を除去する機構が、ヒーターを備える請求項13記載のシステム。
- 前記ヒーターが、前記第1の前駆体により吸収される波長の放射線を発生する赤外線発生源を備える請求項18記載のシステム。
- 前記過剰の前駆体を除去する機構が、マイクロ波発生源を備える請求項13記載のシステム。
- 前記過剰の前駆体を除去する機構が、前記第1の前駆体とともに共沸混合物を形成する材料の供給源を備える請求項13記載のシステム。
- 前記過剰の前駆体を除去する機構が、さらにヒーターを備える請求項21記載のシステム。
- 前記基板はフレキシブルなポリマーウェブからなり、
前記運搬機構は、
コイルから前記基板を巻き出す送出スプールと、
前記第1と第2の前駆体ゾーンに沿って離間され、前記フレキシブルな基板を、前記隔離ゾーンの一連の制限流路を通して、前記第1と第2の前駆体ゾーンの間で前後に案内して、前記基板を、前記第1と第2の前駆体ゾーンおよび前記隔離ゾーンを通して複数回移動させる一連の回転ガイドと、
前記基板を巻き取る巻取りスプールと、を有し、
前記過剰の前駆体を除去する機構は、前記第2の前駆体ゾーンから離間されるとともに、前記第2の前駆体ゾーンに向けて運搬される際に前記第1の前駆体ゾーンから出るときに前記基板が通過する通路に隣接する前記隔離ゾーンに配置される請求項13記載のシステム。 - 前記第2の前駆体ゾーンに接続されるポンプをさらに有する請求項13記載のシステム。
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US25163909P | 2009-10-14 | 2009-10-14 | |
US61/251,639 | 2009-10-14 | ||
PCT/US2010/052757 WO2011047210A2 (en) | 2009-10-14 | 2010-10-14 | Inhibiting excess precursor transport between separate precursor zones in an atomic layer deposition system |
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EP (1) | EP2488678B1 (ja) |
JP (1) | JP5706903B2 (ja) |
KR (1) | KR101714538B1 (ja) |
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CN101684546B (zh) * | 2008-09-25 | 2012-05-23 | 鸿富锦精密工业(深圳)有限公司 | 软性基板镀膜治具 |
CN103459665B (zh) * | 2011-03-29 | 2017-02-22 | 凸版印刷株式会社 | 卷绕成膜装置 |
JP5854681B2 (ja) * | 2011-07-26 | 2016-02-09 | 古河電気工業株式会社 | 真空成膜装置用ケース付きリール、真空成膜装置及び薄膜積層体の製造方法 |
SG11201407816WA (en) * | 2012-06-15 | 2015-03-30 | Picosun Oy | Coating a substrate web by atomic layer deposition |
KR101372309B1 (ko) * | 2012-08-07 | 2014-03-13 | (주)씨엔원 | 롤투롤 방식의 원자층 증착 장비 및 원자층 증착 방법 |
WO2014084698A1 (ko) * | 2012-11-30 | 2014-06-05 | 주식회사 엘지화학 | 막 형성 장치 |
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EP2488678A2 (en) | 2012-08-22 |
EP2488678A4 (en) | 2016-03-02 |
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KR101714538B1 (ko) | 2017-03-09 |
CN102639749B (zh) | 2015-06-17 |
JP2013508544A (ja) | 2013-03-07 |
WO2011047210A3 (en) | 2011-07-07 |
US20110256323A1 (en) | 2011-10-20 |
KR20120085260A (ko) | 2012-07-31 |
US8637117B2 (en) | 2014-01-28 |
CN102639749A (zh) | 2012-08-15 |
WO2011047210A2 (en) | 2011-04-21 |
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