CN102639749B - 在原子层沉积系统中抑制过量前体在单独前体区之间运送 - Google Patents

在原子层沉积系统中抑制过量前体在单独前体区之间运送 Download PDF

Info

Publication number
CN102639749B
CN102639749B CN201080056514.9A CN201080056514A CN102639749B CN 102639749 B CN102639749 B CN 102639749B CN 201080056514 A CN201080056514 A CN 201080056514A CN 102639749 B CN102639749 B CN 102639749B
Authority
CN
China
Prior art keywords
precursor
prosoma
substrate
excess
removing mechanism
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080056514.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN102639749A (zh
Inventor
E.R.迪基
W.A.贝罗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lotus Applied Technology LLC
Original Assignee
Lotus Applied Technology LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lotus Applied Technology LLC filed Critical Lotus Applied Technology LLC
Publication of CN102639749A publication Critical patent/CN102639749A/zh
Application granted granted Critical
Publication of CN102639749B publication Critical patent/CN102639749B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CN201080056514.9A 2009-10-14 2010-10-14 在原子层沉积系统中抑制过量前体在单独前体区之间运送 Expired - Fee Related CN102639749B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US25163909P 2009-10-14 2009-10-14
US61/251639 2009-10-14
US61/251,639 2009-10-14
PCT/US2010/052757 WO2011047210A2 (en) 2009-10-14 2010-10-14 Inhibiting excess precursor transport between separate precursor zones in an atomic layer deposition system

Publications (2)

Publication Number Publication Date
CN102639749A CN102639749A (zh) 2012-08-15
CN102639749B true CN102639749B (zh) 2015-06-17

Family

ID=43876878

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080056514.9A Expired - Fee Related CN102639749B (zh) 2009-10-14 2010-10-14 在原子层沉积系统中抑制过量前体在单独前体区之间运送

Country Status (7)

Country Link
US (1) US8637117B2 (https=)
EP (1) EP2488678B1 (https=)
JP (1) JP5706903B2 (https=)
KR (1) KR101714538B1 (https=)
CN (1) CN102639749B (https=)
BR (1) BR112012008642A2 (https=)
WO (1) WO2011047210A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107210199A (zh) * 2014-10-17 2017-09-26 路特斯应用技术有限责任公司 高速沉积混合氧化物阻挡膜

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101684546B (zh) * 2008-09-25 2012-05-23 鸿富锦精密工业（深圳）有限公司 软性基板镀膜治具
JP5206908B2 (ja) * 2011-03-29 2013-06-12 凸版印刷株式会社 巻き取り成膜装置
JP5854681B2 (ja) * 2011-07-26 2016-02-09 古河電気工業株式会社 真空成膜装置用ケース付きリール、真空成膜装置及び薄膜積層体の製造方法
US20150167165A1 (en) * 2012-06-15 2015-06-18 Picosun Oy Coating a substrate web by atomic layer deposition
KR101372309B1 (ko) * 2012-08-07 2014-03-13 (주)씨엔원 롤투롤 방식의 원자층 증착 장비 및 원자층 증착 방법
TWI548770B (zh) * 2012-11-30 2016-09-11 Ｌｇ化學股份有限公司 形成膜層之裝置
CN103966572A (zh) * 2013-02-05 2014-08-06 王东君 卷对卷式原子层沉积设备及其使用方法
EP2765218A1 (en) * 2013-02-07 2014-08-13 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Method and apparatus for depositing atomic layers on a substrate
US9435028B2 (en) * 2013-05-06 2016-09-06 Lotus Applied Technology, Llc Plasma generation for thin film deposition on flexible substrates
CN105378148B (zh) 2013-07-16 2018-03-27 3M创新有限公司 膜的卷处理
CN104746046A (zh) * 2013-12-29 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 原子层沉积设备
JP6669070B2 (ja) * 2014-09-19 2020-03-18 凸版印刷株式会社 成膜装置及び成膜方法
JP6716129B2 (ja) * 2015-11-30 2020-07-01 気相成長株式会社 金属酸化物膜形成方法
TWI720181B (zh) * 2016-05-30 2021-03-01 日商新力股份有限公司 薄膜製造方法、薄膜製造裝置、光電轉換元件之製造方法、邏輯電路之製造方法、發光元件之製造方法及調光元件之製造方法
JP2019102483A (ja) * 2017-11-28 2019-06-24 東京エレクトロン株式会社 エッチング方法およびエッチング装置
CN109082648A (zh) * 2018-11-13 2018-12-25 北京工业大学 原子层沉积连续式双面镀膜的卷绕装置
KR20220091517A (ko) * 2019-10-30 2022-06-30 아익스트론 에스이 탄소 함유 구조물들을 증착하기 위한 장치 및 방법
GB2588940B (en) * 2019-11-15 2022-06-22 Dyson Technology Ltd Sputter deposition
EP4165225A1 (en) * 2020-06-10 2023-04-19 3M Innovative Properties Company Roll-to-roll vapor deposition apparatus and method
US12180586B2 (en) 2021-08-13 2024-12-31 NanoMaster, Inc. Apparatus and methods for roll-to-roll (R2R) plasma enhanced/activated atomic layer deposition (PEALD/PAALD)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070281089A1 (en) * 2006-06-05 2007-12-06 General Electric Company Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects
US20080026162A1 (en) * 2006-07-29 2008-01-31 Dickey Eric R Radical-enhanced atomic layer deposition system and method
WO2009004117A1 (en) * 2007-07-03 2009-01-08 Beneq Oy Method in depositing metal oxide materials
CN101406108A (zh) * 2006-03-26 2009-04-08 罗特斯应用技术公司 原子层沉积系统以及用于涂覆柔性衬底的方法

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2384500A (en) 1942-07-08 1945-09-11 Crown Cork & Seal Co Apparatus and method of coating
US2458394A (en) 1945-11-15 1949-01-04 Eastman Kodak Co Film processing unit
US3314393A (en) 1962-07-05 1967-04-18 Nippon Electric Co Vapor deposition device
US3379803A (en) 1964-05-04 1968-04-23 Union Carbide Corp Coating method and apparatus for deposition of polymer-forming vapor under vacuum
US3650042A (en) 1969-05-19 1972-03-21 Ibm Gas barrier for interconnecting and isolating two atmospheres
US3964434A (en) 1974-11-04 1976-06-22 Technicon Instruments Corporation Coating apparatus including liquid sealant between compartments
GB1596385A (en) 1976-12-29 1981-08-26 Matsushita Electric Industrial Co Ltd Methods and apparatus for manufacturing magnetic recording media
JPS6030124A (ja) 1983-07-28 1985-02-15 Fuji Electric Corp Res & Dev Ltd 多段電極型半導体薄膜生成装置
US4803947A (en) 1986-01-15 1989-02-14 Canon Kabushiki Kaisha Apparatus for forming deposited film
US4728406A (en) 1986-08-18 1988-03-01 Energy Conversion Devices, Inc. Method for plasma - coating a semiconductor body
JPH0395922A (ja) * 1989-09-07 1991-04-22 Canon Inc 半導体薄膜の形成方法
US5629054A (en) 1990-11-20 1997-05-13 Canon Kabushiki Kaisha Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
JP2975151B2 (ja) 1991-03-28 1999-11-10 キヤノン株式会社 半導体素子の連続的製造装置
JPH0578818A (ja) 1991-09-19 1993-03-30 Hitachi Cable Ltd 部分被膜の形成方法
IT1261918B (it) 1993-06-11 1996-06-04 Cetev Cent Tecnolog Vuoto Struttura per deposizione reattiva di metalli in impianti da vuoto continui e relativo processo.
US5411592A (en) 1994-06-06 1995-05-02 Ovonic Battery Company, Inc. Apparatus for deposition of thin-film, solid state batteries
US5817550A (en) 1996-03-05 1998-10-06 Regents Of The University Of California Method for formation of thin film transistors on plastic substrates
US6287988B1 (en) * 1997-03-18 2001-09-11 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device
US6576053B1 (en) 1999-10-06 2003-06-10 Samsung Electronics Co., Ltd. Method of forming thin film using atomic layer deposition method
JP4316767B2 (ja) 2000-03-22 2009-08-19 株式会社半導体エネルギー研究所 基板処理装置
US6660326B2 (en) * 2000-08-04 2003-12-09 Tomoegawa Paper Co. Ltd. Production method for monolayer powder film and production apparatus therefor
US7476420B2 (en) 2000-10-23 2009-01-13 Asm International N.V. Process for producing metal oxide films at low temperatures
EP1346182B1 (en) * 2000-12-20 2007-07-18 Yazaki Corporation Apparatus and related method for rapid cure of sol-gel coatings
US7077935B2 (en) * 2001-05-04 2006-07-18 General Atomics O2 and H2O barrier material
KR100492769B1 (ko) 2001-05-17 2005-06-07 주식회사 엘지이아이 수직챔버를 구비한 플라즈마중합 연속처리장치
US9376750B2 (en) 2001-07-18 2016-06-28 Regents Of The University Of Colorado, A Body Corporate Method of depositing an inorganic film on an organic polymer
US6461436B1 (en) 2001-10-15 2002-10-08 Micron Technology, Inc. Apparatus and process of improving atomic layer deposition chamber performance
US6926572B2 (en) 2002-01-25 2005-08-09 Electronics And Telecommunications Research Institute Flat panel display device and method of forming passivation film in the flat panel display device
PT1347077E (pt) 2002-03-15 2006-09-29 Vhf Technologies Sa Aparelho e metodo para a producao de dispositivos semicondutores flexiveis
US6821563B2 (en) 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
KR100512626B1 (ko) 2002-10-18 2005-09-02 엘지.필립스 엘시디 주식회사 유기전계발광소자 및 그 제조방법
US7404990B2 (en) * 2002-11-14 2008-07-29 Air Products And Chemicals, Inc. Non-thermal process for forming porous low dielectric constant films
WO2004059032A1 (ja) 2002-12-26 2004-07-15 Toppan Printing Co., Ltd. 真空蒸着装置及び蒸着フィルム製造方法
US6888172B2 (en) 2003-04-11 2005-05-03 Eastman Kodak Company Apparatus and method for encapsulating an OLED formed on a flexible substrate
US20040261703A1 (en) 2003-06-27 2004-12-30 Jeffrey D. Chinn Apparatus and method for controlled application of reactive vapors to produce thin films and coatings
US20050113527A1 (en) * 2003-11-21 2005-05-26 Perrella Frank W. Crosslinking polymer composition
US7074719B2 (en) 2003-11-28 2006-07-11 International Business Machines Corporation ALD deposition of ruthenium
US20050172897A1 (en) 2004-02-09 2005-08-11 Frank Jansen Barrier layer process and arrangement
JP2006124784A (ja) 2004-10-29 2006-05-18 Canon Inc 真空装置および真空チャンバーの排気方法
KR100629172B1 (ko) * 2004-11-08 2006-09-27 삼성전자주식회사 막 형성 장치
WO2006093168A1 (ja) 2005-03-04 2006-09-08 Youtec Co., Ltd. Ｃｖｄ装置と、それを用いた多層膜形成方法と、それにより形成された多層膜
US7547796B2 (en) * 2005-09-29 2009-06-16 Praxair Technology, Inc. Organometallic compounds, processes for the preparation thereof and methods of use thereof
CH697933B1 (de) 2005-11-03 2009-03-31 Tetra Laval Holdings & Finance Verfahren und Vorrichtung zur Beschichtung von Kunststofffolien mit einer Oxidschicht.
DE102005058869A1 (de) 2005-12-09 2007-06-14 Cis Solartechnik Gmbh & Co. Kg Verfahren und Vorrichtung zur Beschichtung von Bändern
US7413982B2 (en) 2006-03-29 2008-08-19 Eastman Kodak Company Process for atomic layer deposition
US7456429B2 (en) * 2006-03-29 2008-11-25 Eastman Kodak Company Apparatus for atomic layer deposition
US7976899B2 (en) 2006-10-23 2011-07-12 General Electric Company Methods for selective deposition of graded materials on continuously fed objects
CN101657564A (zh) 2007-02-12 2010-02-24 莲花应用技术有限责任公司 用原子层沉积制备复合材料
US7713874B2 (en) * 2007-05-02 2010-05-11 Asm America, Inc. Periodic plasma annealing in an ALD-type process
US8945675B2 (en) 2008-05-29 2015-02-03 Asm International N.V. Methods for forming conductive titanium oxide thin films
BRPI0922795A2 (pt) 2008-12-05 2018-05-29 Lotus Applied Tech Llc alta taxa de deposição de filmes finos com propriedades de camada de barreira melhorada

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101406108A (zh) * 2006-03-26 2009-04-08 罗特斯应用技术公司 原子层沉积系统以及用于涂覆柔性衬底的方法
US20070281089A1 (en) * 2006-06-05 2007-12-06 General Electric Company Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects
US20080026162A1 (en) * 2006-07-29 2008-01-31 Dickey Eric R Radical-enhanced atomic layer deposition system and method
WO2009004117A1 (en) * 2007-07-03 2009-01-08 Beneq Oy Method in depositing metal oxide materials

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107210199A (zh) * 2014-10-17 2017-09-26 路特斯应用技术有限责任公司 高速沉积混合氧化物阻挡膜

Also Published As

Publication number Publication date
US20110256323A1 (en) 2011-10-20
WO2011047210A3 (en) 2011-07-07
CN102639749A (zh) 2012-08-15
KR101714538B1 (ko) 2017-03-09
JP2013508544A (ja) 2013-03-07
BR112012008642A2 (pt) 2017-06-13
US8637117B2 (en) 2014-01-28
EP2488678B1 (en) 2019-01-16
KR20120085260A (ko) 2012-07-31
JP5706903B2 (ja) 2015-04-22
EP2488678A2 (en) 2012-08-22
WO2011047210A2 (en) 2011-04-21
EP2488678A4 (en) 2016-03-02

Similar Documents

Publication Publication Date Title
CN102639749B (zh) 在原子层沉积系统中抑制过量前体在单独前体区之间运送
US9469901B2 (en) Atomic layer deposition method utilizing multiple precursor zones for coating flexible substrates
JP5778174B2 (ja) ラジカル増進薄膜堆積のための酸素ラジカルの発生
JP5828895B2 (ja) ロール・ツー・ロール薄膜堆積用の可撓性ウェブ基板の片面接触式基板輸送機構
JP6096783B2 (ja) 大気圧プラズマ法によるコーティング作製方法
JP2013520564A (ja) ウェブ基板堆積システム
US20160108524A1 (en) High-speed deposition of mixed oxide barrier films
KR102450786B1 (ko) 적층체 및 그 제조 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150617

CF01 Termination of patent right due to non-payment of annual fee