JP2013502050A5 - - Google Patents
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- JP2013502050A5 JP2013502050A5 JP2012523598A JP2012523598A JP2013502050A5 JP 2013502050 A5 JP2013502050 A5 JP 2013502050A5 JP 2012523598 A JP2012523598 A JP 2012523598A JP 2012523598 A JP2012523598 A JP 2012523598A JP 2013502050 A5 JP2013502050 A5 JP 2013502050A5
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- JP
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- Prior art keywords
- thin film
- graphene
- film
- catalyst
- polymer base
- Prior art date
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- 239000010409 thin film Substances 0.000 claims 53
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 35
- 229910021389 graphene Inorganic materials 0.000 claims 35
- 239000003054 catalyst Substances 0.000 claims 26
- 239000010408 film Substances 0.000 claims 23
- 239000000758 substrate Substances 0.000 claims 21
- 229920000642 polymer Polymers 0.000 claims 18
- 239000000853 adhesive Substances 0.000 claims 3
- 230000001070 adhesive Effects 0.000 claims 3
- 239000011248 coating agent Substances 0.000 claims 3
- 238000000576 coating method Methods 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002904 solvent Substances 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 238000002048 anodisation reaction Methods 0.000 claims 1
- 238000007743 anodising Methods 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims 1
- 239000004926 polymethyl methacrylate Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000000052 vinegar Substances 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
Claims (21)
- 触媒薄膜上にグラフェン薄膜をヘテロエピタキシャル成長させ；
前記グラフェン薄膜上の前記触媒薄膜と反対の表面上にポリマーベース膜を配置し；
前記ポリマーベース膜を硬化させ；かつ
前記グラフェン薄膜およびポリマーベース膜を前記触媒薄膜から剥離させることを含むグラフェン薄膜の単離方法。 - 前記触媒薄膜が背部支持基板上に配置され、前記背部支持基板が前記触媒薄膜上の前記グラフェン薄膜と反対の表面上に形成され、かつ薄膜剥離層が前記背部支持基板および触媒薄膜の間に配置される請求項１に記載の方法。
- 前記剥離層が酸化亜鉛を含む請求項２に記載の方法。
- 前記グラフェン薄膜およびポリマーベース膜が、剥離層を含む化学的作用により、少なくとも前記基板から剥離される請求項２または３に記載の方法。
- 前記グラフェン薄膜およびポリマーベース膜が、酢を用いて剥離層を含む化学的作用により、前記基板および触媒薄膜から剥離される請求項２〜４のいずれか１つに記載の方法。
- 前記グラフェン薄膜およびポリマーベース膜が、前記触媒薄膜のエッチングにより、前記触媒薄膜から剥離される請求項１〜５のいずれか１つに記載の方法。
- 前記グラフェン薄膜およびポリマーベース膜が、前記触媒薄膜の少なくとも一部のエッチングにより、前記触媒薄膜から剥離される請求項１〜６のいずれか１つに記載の方法。
- グラフェン親和性コーティングでターゲット受電基板をコーティングすることにより、ターゲット受電基板をつくることをさらに含む請求項１〜７のいずれか１つに記載の方法。
- 前記グラフェン親和性コーティングが、シリコン含有膜またはラングミュア−プロジェットフィルムである請求項８に記載の方法。
- ターゲット受電基板の表面エネルギーを増加させるために、紫外線を前記ターゲット受電基板に曝露し、それにより前記ターゲット受電基板を他の方法よりもより前記グラフェン薄膜を受容的にすることをさらに含む請求項１〜９のいずれか１つに記載の方法。
- 接触圧力を用いて、ターゲット受電基板上に直接または間接的に前記グラフェン薄膜およびポリマーベース膜を配置することをさらに含み、前記グラフェン薄膜が前記ポリマーベース膜よりも前記ターゲット受電基板の近くである請求項１〜１０のいずれか１つに記載の方法。
- 前記ターゲット受電基板上への前記グラフェン薄膜およびポリマーベース膜の配置が、ブランケットスタンピングを用いて行われる請求項１１に記載の方法。
- 前記ターゲット受電基板上への前記グラフェン薄膜およびポリマーベース膜の配置が、１つ以上のローラーを用いて行われる請求項１１に記載の方法。
- 溶剤を用いてそれを溶解することおよび／または紫外線の曝露により、前記ポリマーベースの層を除去することをさらに含む請求項１１〜１３のいずれか１つに記載の方法。
- 触媒薄膜上にグラフェン薄膜をヘテロエピタキシャル成長させ；
前記グラフェン薄膜上の前記触媒薄膜と反対の表面上にポリマーベース膜を配置し；
前記グラフェン薄膜およびポリマーベース膜を前記触媒薄膜から剥離させ；
接触圧力を用いて、ターゲット受電基板上に直接または間接的に前記グラフェン薄膜およびポリマーベース膜を配置し、前記グラフェン薄膜が前記ポリマーベース膜よりも前記ターゲット受電基板の近くであり；かつ
溶剤および／または紫外線のその曝露によりポリマーベースの層を除去することを含むターゲット受電基板上でのグラフェン薄膜の配置方法。 - 前記ポリマーベース層がＰＭＭＡである請求項１５に記載の方法。
- 金属触媒薄膜上にグラフェン薄膜をヘテロエピタキシャル成長させ；
ターゲット受電基板上に直接または間接的にグラフェン薄膜および触媒薄膜を配置し；かつ
前記触媒薄膜に実質的に透明金属酸化物を与えるために、前記グラフェン下の触媒薄膜を電気化学的に陽極酸化する
ことを含むターゲット受電基板上でのグラフェン薄膜の配置方法。 - 前記電気化学的な陽極酸化の間、前記グラフェン薄膜が、前記金属触媒薄膜が陽極化されるのと同様に陰極化される請求項１７に記載の方法。
- 触媒薄膜上にグラフェン薄膜をヘテロエピタキシャル成長させ；
前記触媒薄膜と反対の表面上の前記グラフェン薄膜に接着剤を適用し；
前記触媒薄膜から前記グラフェン薄膜を剥離させ；かつ
前記グラフェン薄膜を前記ターゲット受電基板に接着させることを含むターゲット受電基板上でのグラフェン薄膜の配置方法。 - 前記グラフェン薄膜が、前記接着剤の剥離の間、前記グラフェン薄膜および触媒薄膜の間よりも、前記グラフェン薄膜および接着剤の間のより強い結合の効力により、前記触媒薄膜から剥離される請求項１９に記載の方法。
- 前記グラフェン薄膜が、前記触媒薄膜の選択的なエッチングにより、前記触媒薄膜から剥離される請求項１９に記載の方法。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/461,347 US8236118B2 (en) | 2009-08-07 | 2009-08-07 | Debonding and transfer techniques for hetero-epitaxially grown graphene, and products including the same |
| US12/461,347 | 2009-08-07 | ||
| PCT/US2010/002056 WO2011016836A2 (en) | 2009-08-07 | 2010-07-22 | Debonding and transfer techniques for hetero-epitaxially grown graphene, and products including the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013502050A JP2013502050A (ja) | 2013-01-17 |
| JP2013502050A5 true JP2013502050A5 (ja) | 2013-08-01 |
| JP5714012B2 JP5714012B2 (ja) | 2015-05-07 |
Family
ID=42747678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012523598A Expired - Fee Related JP5714012B2 (ja) | 2009-08-07 | 2010-07-22 | ヘテロエピタキシャル成長したグラフェンの剥離および転写技術およびそれを含む生成物 |
Country Status (14)
| Country | Link |
|---|---|
| US (2) | US8236118B2 (ja) |
| EP (1) | EP2462263B1 (ja) |
| JP (1) | JP5714012B2 (ja) |
| KR (1) | KR101724773B1 (ja) |
| CN (1) | CN102713025B (ja) |
| BR (1) | BR112012002705A2 (ja) |
| DK (1) | DK2462263T3 (ja) |
| ES (1) | ES2686329T3 (ja) |
| IN (1) | IN2012DN00998A (ja) |
| MX (1) | MX2012001604A (ja) |
| PL (1) | PL2462263T3 (ja) |
| RU (1) | RU2568718C2 (ja) |
| TW (1) | TWI509099B (ja) |
| WO (1) | WO2011016836A2 (ja) |
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| RU2760676C1 (ru) * | 2020-12-18 | 2021-11-29 | Федеральное государственное бюджетное учреждение науки Институт теплофизики им. С.С. Кутателадзе Сибирского отделения Российской академии наук | Cvd реактор рулонного типа для синтеза графеновых покрытий на подложках в виде широкой ленты |
| CN112778823B (zh) * | 2021-01-27 | 2022-08-12 | 九江纳维新材料科技有限公司 | 超高电导率电子级石墨烯-银复合导电uv固化油墨及其制备方法与应用 |
| CN114538429B (zh) * | 2022-04-19 | 2023-06-30 | 深圳前海石墨烯产业有限公司 | 基于金属铬牺牲层的石墨烯转移方法 |
| CN114906842B (zh) * | 2022-04-29 | 2023-11-10 | 遵义师范学院 | 一种防止石墨烯晶格损坏的石墨烯薄膜转移装置及方法 |
| WO2023225055A1 (en) * | 2022-05-17 | 2023-11-23 | Georgia State University Research Foundation, Inc. | Water surface tension enabled high quality graphene transfer |
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- 2010-07-22 CN CN201080034919.2A patent/CN102713025B/zh not_active Expired - Fee Related
- 2010-07-22 KR KR1020127005788A patent/KR101724773B1/ko active IP Right Grant
- 2010-07-22 MX MX2012001604A patent/MX2012001604A/es active IP Right Grant
- 2010-07-22 EP EP10739728.3A patent/EP2462263B1/en not_active Not-in-force
- 2010-07-22 DK DK10739728.3T patent/DK2462263T3/en active
- 2010-07-22 JP JP2012523598A patent/JP5714012B2/ja not_active Expired - Fee Related
- 2010-07-22 PL PL10739728T patent/PL2462263T3/pl unknown
- 2010-07-22 RU RU2012108624/05A patent/RU2568718C2/ru not_active IP Right Cessation
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