FR3062398B1 - Procede de fabrication d'un substrat pour la croissance d'un film bidimensionnel de structure cristalline hexagonale - Google Patents

Procede de fabrication d'un substrat pour la croissance d'un film bidimensionnel de structure cristalline hexagonale Download PDF

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Publication number
FR3062398B1
FR3062398B1 FR1750868A FR1750868A FR3062398B1 FR 3062398 B1 FR3062398 B1 FR 3062398B1 FR 1750868 A FR1750868 A FR 1750868A FR 1750868 A FR1750868 A FR 1750868A FR 3062398 B1 FR3062398 B1 FR 3062398B1
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FR
France
Prior art keywords
substrate
manufacturing
growth
dimensional film
crystalline structure
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1750868A
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English (en)
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FR3062398A1 (fr
Inventor
Bruno Ghyselen
Jean-Marc Bethoux
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Soitec SA
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Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1750868A priority Critical patent/FR3062398B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to JP2019541704A priority patent/JP7341059B2/ja
Priority to PCT/FR2018/050217 priority patent/WO2018142061A1/fr
Priority to CN201880009436.3A priority patent/CN110234800B/zh
Priority to SG11201906821PA priority patent/SG11201906821PA/en
Priority to KR1020197025738A priority patent/KR102523183B1/ko
Priority to US16/481,767 priority patent/US11913134B2/en
Priority to EP18705964.7A priority patent/EP3577257A1/fr
Publication of FR3062398A1 publication Critical patent/FR3062398A1/fr
Application granted granted Critical
Publication of FR3062398B1 publication Critical patent/FR3062398B1/fr
Priority to US18/461,226 priority patent/US20230416940A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un substrat (100) pour la croissance d'un film bidimensionnel d'un matériau du groupe IV présentant une structure cristalline hexagonale, notamment de graphène, caractérisé en ce qu'il comprend le transfert d'un film métallique (1) monocristallin adapté pour la croissance dudit film bidimensionnel sur un substrat support (2). L'invention concerne également un procédé de fabrication d'un film bidimensionnel d'un matériau du groupe IV présentant une structure cristalline hexagonale, notamment de graphène, comprenant la fourniture d'un substrat de croissance (100) obtenu par le procédé décrit précédemment, et la croissance par épitaxie du film bidimensionnel sur le film métallique dudit substrat (100).
FR1750868A 2017-02-02 2017-02-02 Procede de fabrication d'un substrat pour la croissance d'un film bidimensionnel de structure cristalline hexagonale Active FR3062398B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR1750868A FR3062398B1 (fr) 2017-02-02 2017-02-02 Procede de fabrication d'un substrat pour la croissance d'un film bidimensionnel de structure cristalline hexagonale
PCT/FR2018/050217 WO2018142061A1 (fr) 2017-02-02 2018-01-31 Procede de fabrication d'un film bidimensionnel de structure cristalline hexagonale
CN201880009436.3A CN110234800B (zh) 2017-02-02 2018-01-31 制造六方晶体结构的二维膜的方法
SG11201906821PA SG11201906821PA (en) 2017-02-02 2018-01-31 Process for manufacturing a two-dimensional film of hexagonal crystalline structure
JP2019541704A JP7341059B2 (ja) 2017-02-02 2018-01-31 六方晶構造の二次元膜の製造方法
KR1020197025738A KR102523183B1 (ko) 2017-02-02 2018-01-31 육방정계 결정 구조의 2차원 막을 제조하기 위한 방법
US16/481,767 US11913134B2 (en) 2017-02-02 2018-01-31 Process for manufacturing a two-dimensional film of hexagonal crystalline structure using epitaxial growth on a transferred thin metal film
EP18705964.7A EP3577257A1 (fr) 2017-02-02 2018-01-31 Procede de fabrication d'un film bidimensionnel de structure cristalline hexagonale
US18/461,226 US20230416940A1 (en) 2017-02-02 2023-09-05 Process for manufacturing a two-dimensional film of hexagonal crystalline structure using epitaxial growth on a transferred thin metal film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1750868A FR3062398B1 (fr) 2017-02-02 2017-02-02 Procede de fabrication d'un substrat pour la croissance d'un film bidimensionnel de structure cristalline hexagonale
FR1750868 2017-02-02

Publications (2)

Publication Number Publication Date
FR3062398A1 FR3062398A1 (fr) 2018-08-03
FR3062398B1 true FR3062398B1 (fr) 2021-07-30

Family

ID=58632458

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1750868A Active FR3062398B1 (fr) 2017-02-02 2017-02-02 Procede de fabrication d'un substrat pour la croissance d'un film bidimensionnel de structure cristalline hexagonale

Country Status (8)

Country Link
US (2) US11913134B2 (fr)
EP (1) EP3577257A1 (fr)
JP (1) JP7341059B2 (fr)
KR (1) KR102523183B1 (fr)
CN (1) CN110234800B (fr)
FR (1) FR3062398B1 (fr)
SG (1) SG11201906821PA (fr)
WO (1) WO2018142061A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110616454B (zh) * 2019-03-07 2020-10-09 北京大学 一种基于单晶二维材料/单晶铜的垂直异质外延单晶金属薄膜的方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2857983B1 (fr) 2003-07-24 2005-09-02 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiee
KR20040088448A (ko) * 2004-09-21 2004-10-16 정세영 단결정 와이어 제조방법
KR20100065145A (ko) * 2007-09-14 2010-06-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
KR101344493B1 (ko) * 2007-12-17 2013-12-24 삼성전자주식회사 단결정 그라펜 시트 및 그의 제조방법
JP5297219B2 (ja) * 2008-02-29 2013-09-25 信越化学工業株式会社 単結晶薄膜を有する基板の製造方法
US20120000415A1 (en) * 2010-06-18 2012-01-05 Soraa, Inc. Large Area Nitride Crystal and Method for Making It
US8148801B2 (en) * 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
US8236118B2 (en) * 2009-08-07 2012-08-07 Guardian Industries Corp. Debonding and transfer techniques for hetero-epitaxially grown graphene, and products including the same
EP2540862B1 (fr) 2010-02-26 2016-11-23 National Institute of Advanced Industrial Science And Technology Stratifié de film de carbone
US8436363B2 (en) * 2011-02-03 2013-05-07 Soitec Metallic carrier for layer transfer and methods for forming the same
US8501531B2 (en) 2011-04-07 2013-08-06 The United States Of America, As Represented By The Secretary Of The Navy Method of forming graphene on a surface
JPWO2013038623A1 (ja) * 2011-09-16 2015-03-23 富士電機株式会社 グラフェンの製造方法ならびにグラフェン
FR2987166B1 (fr) 2012-02-16 2017-05-12 Soitec Silicon On Insulator Procede de transfert d'une couche
WO2014030040A1 (fr) * 2012-08-24 2014-02-27 Soitec Procédés de formation de structures et dispositifs semiconducteurs comprenant du graphène, et structures et dispositifs associés
CN103871684A (zh) 2012-12-18 2014-06-18 Hcgt有限公司 应用石墨烯的结构及其制造方法
WO2014125688A1 (fr) * 2013-02-18 2014-08-21 住友電気工業株式会社 Substrat composite au nitrure du groupe iii et procédé de fabrication associé, substrat composite au nitrure du groupe iii stratifié, et dispositif semi-conducteur au nitrure du groupe iii et procédé de fabrication associé
WO2014189271A1 (fr) * 2013-05-21 2014-11-27 한양대학교 산학협력단 Graphene en monocouche moncristalline a grande surface et procede de fabrication associe
KR101701237B1 (ko) * 2013-05-21 2017-02-03 한양대학교 산학협력단 대면적의 단결정 단일막 그래핀 및 그 제조방법
CN103354273B (zh) 2013-06-17 2016-02-24 华侨大学 一种嵌入式大面积柔性敏化太阳电池及其制备方法

Also Published As

Publication number Publication date
SG11201906821PA (en) 2019-08-27
JP2020506150A (ja) 2020-02-27
US20230416940A1 (en) 2023-12-28
JP7341059B2 (ja) 2023-09-08
US11913134B2 (en) 2024-02-27
CN110234800A (zh) 2019-09-13
US20190390366A1 (en) 2019-12-26
KR102523183B1 (ko) 2023-04-18
EP3577257A1 (fr) 2019-12-11
FR3062398A1 (fr) 2018-08-03
CN110234800B (zh) 2021-03-30
KR20190110613A (ko) 2019-09-30
WO2018142061A1 (fr) 2018-08-09

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