IN2012DN00998A - - Google Patents
Info
- Publication number
- IN2012DN00998A IN2012DN00998A IN998DEN2012A IN2012DN00998A IN 2012DN00998 A IN2012DN00998 A IN 2012DN00998A IN 998DEN2012 A IN998DEN2012 A IN 998DEN2012A IN 2012DN00998 A IN2012DN00998 A IN 2012DN00998A
- Authority
- IN
- India
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/188—Preparation by epitaxial growth
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/194—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F5/00—Electrolytic stripping of metallic layers or coatings
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/02—Single layer graphene
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Catalysts (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/461,347 US8236118B2 (en) | 2009-08-07 | 2009-08-07 | Debonding and transfer techniques for hetero-epitaxially grown graphene, and products including the same |
| PCT/US2010/002056 WO2011016836A2 (en) | 2009-08-07 | 2010-07-22 | Debonding and transfer techniques for hetero-epitaxially grown graphene, and products including the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2012DN00998A true IN2012DN00998A (en) | 2015-04-10 |
Family
ID=42747678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN998DEN2012 IN2012DN00998A (en) | 2009-08-07 | 2012-02-03 |
Country Status (14)
| Country | Link |
|---|---|
| US (2) | US8236118B2 (en) |
| EP (1) | EP2462263B1 (en) |
| JP (1) | JP5714012B2 (en) |
| KR (1) | KR101724773B1 (en) |
| CN (1) | CN102713025B (en) |
| BR (1) | BR112012002705A2 (en) |
| DK (1) | DK2462263T3 (en) |
| ES (1) | ES2686329T3 (en) |
| IN (1) | IN2012DN00998A (en) |
| MX (1) | MX2012001604A (en) |
| PL (1) | PL2462263T3 (en) |
| RU (1) | RU2568718C2 (en) |
| TW (1) | TWI509099B (en) |
| WO (1) | WO2011016836A2 (en) |
Families Citing this family (72)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8236118B2 (en) | 2009-08-07 | 2012-08-07 | Guardian Industries Corp. | Debonding and transfer techniques for hetero-epitaxially grown graphene, and products including the same |
| US8269931B2 (en) * | 2009-09-14 | 2012-09-18 | The Aerospace Corporation | Systems and methods for preparing films using sequential ion implantation, and films formed using same |
| KR101652787B1 (en) * | 2009-11-12 | 2016-09-01 | 삼성전자주식회사 | Method of fabricating large-scale graphene and transfering large-scale graphene |
| GB201004554D0 (en) * | 2010-03-18 | 2010-05-05 | Isis Innovation | Superconducting materials |
| DE102010038079A1 (en) * | 2010-10-08 | 2012-04-12 | Peter Bäumler | Laminated glass and process for its production |
| WO2012051182A2 (en) * | 2010-10-11 | 2012-04-19 | University Of Houston System | Fabrication of single-crystalline graphene arrays |
| KR101793684B1 (en) * | 2010-11-19 | 2017-11-03 | 한화테크윈 주식회사 | Apparatus for transferring grapheme |
| US20120273455A1 (en) * | 2011-04-29 | 2012-11-01 | Clean Energy Labs, Llc | Methods for aligned transfer of thin membranes to substrates |
| WO2012122387A1 (en) * | 2011-03-10 | 2012-09-13 | Marshall Cox | Graphene electrodes for electronic devices |
| JP2012199520A (en) * | 2011-03-10 | 2012-10-18 | Toshiba Corp | Semiconductor device and manufacturing method of the same |
| US8946864B2 (en) | 2011-03-16 | 2015-02-03 | The Aerospace Corporation | Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same |
| JP2014515181A (en) | 2011-03-22 | 2014-06-26 | ユニバーシティ・オブ・マンチェスター | Transistor device and fabrication material thereof |
| GB201104824D0 (en) | 2011-03-22 | 2011-05-04 | Univ Manchester | Structures and methods relating to graphene |
| JP5562283B2 (en) * | 2011-04-07 | 2014-07-30 | 日本写真印刷株式会社 | Transparent conductive material comprising transparent conductive film mainly composed of graphene and method for producing the same |
| JP5455963B2 (en) * | 2011-04-07 | 2014-03-26 | 日本写真印刷株式会社 | Transfer sheet having transparent conductive film mainly composed of graphene and method for producing the same |
| JP5541741B2 (en) * | 2011-04-11 | 2014-07-09 | 日本写真印刷株式会社 | Transfer sheet having transparent conductive film mainly composed of graphene and method for producing the same |
| US8739728B2 (en) * | 2011-04-07 | 2014-06-03 | Dynamic Micro Systems, Semiconductor Equipment Gmbh | Methods and apparatuses for roll-on coating |
| CN102191476B (en) * | 2011-04-11 | 2014-12-10 | 兰州大学 | Method for preparing sulfur-doped graphene films |
| CN102719877B (en) * | 2011-06-09 | 2014-09-03 | 中国科学院金属研究所 | Low-cost lossless transfer method of graphene |
| CN102929418A (en) * | 2011-08-09 | 2013-02-13 | 群康科技(深圳)有限公司 | Decorative film, image display system and method for manufacturing touch sensing device |
| US20140190550A1 (en) * | 2011-08-11 | 2014-07-10 | National University Of Singapore | Tandem solar cell with graphene interlayer and method of making |
| KR101878737B1 (en) * | 2011-08-19 | 2018-07-17 | 삼성전자주식회사 | Method of transferring graphene using trench and substrate for transferring graphene |
| CN103906706A (en) | 2011-09-09 | 2014-07-02 | 北伊利诺斯大学董事会 | Crystalline graphene and method of making crystalline graphene |
| WO2013043120A1 (en) * | 2011-09-21 | 2013-03-28 | National University Of Singapore | Methods of nondestructively delaminating graphene from a metal substrate |
| KR101878739B1 (en) | 2011-10-24 | 2018-07-17 | 삼성전자주식회사 | Graphene-transferring member and method of transferring graphene and method of fabrication graphene device using the same |
| WO2013086068A1 (en) * | 2011-12-06 | 2013-06-13 | University Of North Texas | Direct graphene growth on metal oxides by molecular beam epitaxy |
| US9039886B2 (en) * | 2012-02-24 | 2015-05-26 | Cheil Industries, Inc. | Method of transferring graphene |
| KR101920718B1 (en) * | 2012-07-27 | 2018-11-21 | 삼성전자주식회사 | Graphene device manufacturing apparatus and graphene device manufacturing method using the apparatus |
| KR101806917B1 (en) * | 2012-09-06 | 2017-12-08 | 한화테크윈 주식회사 | Method for manufacturing graphene |
| TWI511356B (en) | 2012-11-21 | 2015-12-01 | Ind Tech Res Inst | Graphene electrode, energy storage device employing the same, and method for fabricating the same |
| TWI485290B (en) * | 2012-12-19 | 2015-05-21 | Univ Nat Taiwan | Method for transferring graphene layer |
| US9431487B2 (en) | 2013-01-11 | 2016-08-30 | International Business Machines Corporation | Graphene layer transfer |
| US10315275B2 (en) * | 2013-01-24 | 2019-06-11 | Wisconsin Alumni Research Foundation | Reducing surface asperities |
| KR102077248B1 (en) | 2013-01-25 | 2020-02-13 | 삼성전자주식회사 | Methods for processing substrates |
| US20160297681A1 (en) * | 2013-02-12 | 2016-10-13 | Korea Institute Of Science And Technology | Large-area carbon nanomesh from polymer and method of preparing the same |
| CN104936892A (en) | 2013-02-13 | 2015-09-23 | 韩华泰科株式会社 | Method for producing graphene film and graphene film produced thereby |
| KR102049487B1 (en) * | 2013-03-08 | 2019-11-28 | 삼성디스플레이 주식회사 | Manufacturing method of display device |
| US9324579B2 (en) | 2013-03-14 | 2016-04-26 | The Aerospace Corporation | Metal structures and methods of using same for transporting or gettering materials disposed within semiconductor substrates |
| US9593019B2 (en) | 2013-03-15 | 2017-03-14 | Guardian Industries Corp. | Methods for low-temperature graphene precipitation onto glass, and associated articles/devices |
| US10431354B2 (en) | 2013-03-15 | 2019-10-01 | Guardian Glass, LLC | Methods for direct production of graphene on dielectric substrates, and associated articles/devices |
| CN103215548B (en) * | 2013-04-24 | 2015-12-02 | 厦门烯成新材料科技有限公司 | A kind of preparation method of metal nanoparticle doped graphene |
| US9632542B2 (en) * | 2013-05-02 | 2017-04-25 | The Boeing Company | Touch screens comprising graphene layers |
| US9499433B2 (en) | 2013-06-17 | 2016-11-22 | Guardian Industries Corp. | Heat treatable article with printed coating thereon, and/or method of making the same |
| US9499435B2 (en) | 2013-06-17 | 2016-11-22 | Guardian Industries Corp. | Heat treatable article with screen and/or inkjet printed coating thereon, and/or method of making the same |
| CN103332683B (en) * | 2013-07-10 | 2014-12-03 | 合肥微晶材料科技有限公司 | Graphene storage method |
| CN103342472A (en) * | 2013-07-11 | 2013-10-09 | 常州二维碳素科技有限公司 | Method for transferring graphene film |
| JP5756834B2 (en) * | 2013-10-02 | 2015-07-29 | 尾池工業株式会社 | Transfer film, method for producing the same, and method for producing transparent conductive laminate |
| GB2518858A (en) * | 2013-10-02 | 2015-04-08 | Univ Exeter | Graphene |
| WO2015072927A1 (en) | 2013-11-15 | 2015-05-21 | National University Of Singapore | Ordered growth of large crystal graphene by laser-based localized heating for high throughput production |
| WO2015119572A1 (en) | 2014-02-04 | 2015-08-13 | National University Of Singapore | Method of pulsed laser-based large area graphene synthesis on metallic and crystalline substrates |
| WO2015126139A1 (en) * | 2014-02-19 | 2015-08-27 | Samsung Electronics Co., Ltd. | Wiring structure and electronic device employing the same |
| US9741568B2 (en) * | 2014-05-20 | 2017-08-22 | Shanghai Institute Of Microsystem And Information Technology, Chinese Academy Of Sciences | Sulfur doping method for graphene |
| US10453978B2 (en) | 2015-03-12 | 2019-10-22 | International Business Machines Corporation | Single crystalline CZTSSe photovoltaic device |
| US11848037B2 (en) | 2015-07-29 | 2023-12-19 | National University Of Singapore | Method of protecting a magnetic layer of a magnetic recording medium |
| US10145005B2 (en) | 2015-08-19 | 2018-12-04 | Guardian Glass, LLC | Techniques for low temperature direct graphene growth on glass |
| US10737476B2 (en) | 2015-09-01 | 2020-08-11 | Corning Incorporated | Methods for transferring graphene films and substrates comprising graphene films |
| US9935214B2 (en) | 2015-10-12 | 2018-04-03 | International Business Machines Corporation | Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation |
| CN105551976B (en) * | 2015-12-24 | 2017-12-22 | 无锡格菲电子薄膜科技有限公司 | A kind of forming method of conductive pattern |
| CN105951151B (en) * | 2016-07-13 | 2019-03-01 | 四川鸿森达铝业科技有限公司 | Heat-insulated composite multifunction ceramics coated layer of nano-graphene reflective thermal and preparation method thereof |
| FR3062398B1 (en) * | 2017-02-02 | 2021-07-30 | Soitec Silicon On Insulator | METHOD OF MANUFACTURING A SUBSTRATE FOR THE GROWTH OF A TWO-DIMENSIONAL FILM OF HEXAGONAL CRYSTALLINE STRUCTURE |
| CN107522195A (en) * | 2017-09-27 | 2017-12-29 | 华东师范大学 | A kind of preparation method of graphene hetero-junctions |
| EP3620435B1 (en) * | 2017-10-13 | 2021-07-07 | Zhejiang University | Independent free-standing graphene film and preparation method therefor |
| KR102563925B1 (en) | 2018-08-31 | 2023-08-04 | 삼성전자 주식회사 | Semiconductor manufacturing apparatus |
| DE102018009125A1 (en) * | 2018-11-21 | 2020-05-28 | Neutrino Deutschland Gmbh | Foil made of metal or a metal alloy |
| RU2724228C1 (en) * | 2019-11-19 | 2020-06-22 | Федеральное государственное бюджетное учреждение науки Институт теплофизики им. С.С. Кутателадзе Сибирского отделения Российской академии наук (ИТ СО РАН) | Graphene based heater manufacturing method |
| RU2757239C1 (en) * | 2020-05-22 | 2021-10-12 | Автономная некоммерческая образовательная организация высшего образования «Сколковский институт науки и технологий» | Method for transferring graphene onto a polymer substrate |
| RU2760676C1 (en) * | 2020-12-18 | 2021-11-29 | Федеральное государственное бюджетное учреждение науки Институт теплофизики им. С.С. Кутателадзе Сибирского отделения Российской академии наук | Roll-type cvd reactor for synthesising graphene coatings on substrates in the form of a wide strip |
| CN112778823B (en) * | 2021-01-27 | 2022-08-12 | 九江纳维新材料科技有限公司 | Ultra-high conductivity electronic grade graphene-silver composite conductive UV curing ink and preparation method and application thereof |
| CN114538429B (en) * | 2022-04-19 | 2023-06-30 | 深圳前海石墨烯产业有限公司 | Graphene transfer method based on metal chromium sacrificial layer |
| CN114906842B (en) * | 2022-04-29 | 2023-11-10 | 遵义师范学院 | Graphene film transfer device and method for preventing graphene lattice damage |
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| KR20240178429A (en) | 2023-06-22 | 2024-12-31 | 광운대학교 산학협력단 | Fabrication method of transferable 3-dimensional graphene with transfer-support layer and surface-enhanced raman spectroscopy(SERS) sensor device using the same |
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| WO2011016836A2 (en) | 2011-02-10 |
| US8236118B2 (en) | 2012-08-07 |
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| EP2462263B1 (en) | 2018-06-27 |
| CN102713025A (en) | 2012-10-03 |
| JP5714012B2 (en) | 2015-05-07 |
| WO2011016836A3 (en) | 2011-04-21 |
| RU2568718C2 (en) | 2015-11-20 |
| PL2462263T3 (en) | 2019-02-28 |