JP2013500394A5 - - Google Patents

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Publication number
JP2013500394A5
JP2013500394A5 JP2012522093A JP2012522093A JP2013500394A5 JP 2013500394 A5 JP2013500394 A5 JP 2013500394A5 JP 2012522093 A JP2012522093 A JP 2012522093A JP 2012522093 A JP2012522093 A JP 2012522093A JP 2013500394 A5 JP2013500394 A5 JP 2013500394A5
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JP
Japan
Prior art keywords
composition according
condensate
composition
polyalcohol
substrate
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JP2012522093A
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English (en)
Japanese (ja)
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JP2013500394A (ja
JP5714581B2 (ja
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Priority claimed from PCT/EP2010/060276 external-priority patent/WO2011012462A2/en
Publication of JP2013500394A publication Critical patent/JP2013500394A/ja
Publication of JP2013500394A5 publication Critical patent/JP2013500394A5/ja
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Publication of JP5714581B2 publication Critical patent/JP5714581B2/ja
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JP2012522093A 2009-07-30 2010-07-16 マイクロメーター以下の機構をボイドを形成することなく満たすための抑制剤を含む金属メッキ用組成物 Active JP5714581B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22980309P 2009-07-30 2009-07-30
US61/229,803 2009-07-30
PCT/EP2010/060276 WO2011012462A2 (en) 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (3)

Publication Number Publication Date
JP2013500394A JP2013500394A (ja) 2013-01-07
JP2013500394A5 true JP2013500394A5 (https=) 2013-08-29
JP5714581B2 JP5714581B2 (ja) 2015-05-07

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ID=43425023

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JP2012522093A Active JP5714581B2 (ja) 2009-07-30 2010-07-16 マイクロメーター以下の機構をボイドを形成することなく満たすための抑制剤を含む金属メッキ用組成物

Country Status (11)

Country Link
US (1) US9869029B2 (https=)
EP (1) EP2459778B1 (https=)
JP (1) JP5714581B2 (https=)
KR (1) KR101752018B1 (https=)
CN (1) CN102597329B (https=)
IL (1) IL217536A (https=)
MY (1) MY157126A (https=)
RU (1) RU2539897C2 (https=)
SG (2) SG10201404394QA (https=)
TW (1) TWI487813B (https=)
WO (1) WO2011012462A2 (https=)

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RU2539895C2 (ru) * 2009-07-30 2015-01-27 Басф Се Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности
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EP2655457B1 (en) 2010-12-21 2019-04-10 Basf Se Composition for metal electroplating comprising leveling agent
MY161354A (en) * 2011-02-22 2017-04-14 Basf Se Polymers on the basis of glycerol carbonate and an alcohol
JP6245988B2 (ja) * 2011-02-22 2017-12-13 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se グリセリンカーボネートに基づく重合体
CN103547631B (zh) 2011-06-01 2016-07-06 巴斯夫欧洲公司 包含用于自下向上填充硅穿孔和互联件特征的添加剂的金属电镀用组合物
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
RU2015121797A (ru) 2012-11-09 2017-01-10 Басф Се Композиция для электролитического осаждения металла, содержащая выравнивающий агент
CN105142386B (zh) * 2013-03-13 2020-06-23 巴斯夫欧洲公司 有效增加土壤中水分保留的保湿剂组合物和及其鉴定
PL406197A1 (pl) * 2013-11-22 2015-05-25 Inphotech Spółka Z Ograniczoną Odpowiedzialnością Sposób łączenia włókien światłowodowych pokrytych warstwą przewodzącą z elementami metalowymi
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US9617648B2 (en) * 2015-03-04 2017-04-11 Lam Research Corporation Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias
KR102566586B1 (ko) * 2016-07-18 2023-08-16 바스프 에스이 보이드 없는 서브미크론 피쳐 충전을 위한 첨가제를 포함하는 코발트 도금용 조성물
US11926918B2 (en) 2016-12-20 2024-03-12 Basf Se Composition for metal plating comprising suppressing agent for void free filing
US11387108B2 (en) 2017-09-04 2022-07-12 Basf Se Composition for metal electroplating comprising leveling agent
EP3714085B1 (en) * 2017-11-20 2023-08-09 Basf Se Composition for cobalt electroplating comprising leveling agent
EP3775325B1 (en) 2018-03-29 2024-08-28 Basf Se Composition for tin-silver alloy electroplating comprising a complexing agent
US10529622B1 (en) 2018-07-10 2020-01-07 International Business Machines Corporation Void-free metallic interconnect structures with self-formed diffusion barrier layers
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN114450438A (zh) 2019-09-27 2022-05-06 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
JP2023520530A (ja) 2020-04-03 2023-05-17 ビーエーエスエフ ソシエタス・ヨーロピア ポリアミノアミド型レベリング剤を含む銅バンプ電着用組成物
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
US11384446B2 (en) 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
KR20240070557A (ko) 2021-10-01 2024-05-21 바스프 에스이 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물
US20250388725A1 (en) 2022-07-07 2025-12-25 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
WO2024132828A1 (en) 2022-12-19 2024-06-27 Basf Se A composition for copper nanotwin electrodeposition
US20250149380A1 (en) * 2023-11-02 2025-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure and method of forming same

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RU2529607C2 (ru) 2009-04-07 2014-09-27 Басф Се Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов
WO2010115796A1 (en) 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
CN104195602B (zh) 2009-04-07 2017-05-31 巴斯夫欧洲公司 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物

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