IL217536A - Composition for copper electroplating comprising a source of copper ions and at least one additive, its use for electrodeposition and a process for depositing copper layer on a substrate - Google Patents

Composition for copper electroplating comprising a source of copper ions and at least one additive, its use for electrodeposition and a process for depositing copper layer on a substrate

Info

Publication number
IL217536A
IL217536A IL217536A IL21753612A IL217536A IL 217536 A IL217536 A IL 217536A IL 217536 A IL217536 A IL 217536A IL 21753612 A IL21753612 A IL 21753612A IL 217536 A IL217536 A IL 217536A
Authority
IL
Israel
Prior art keywords
coating
electrically
copper
composition containing
ion source
Prior art date
Application number
IL217536A
Other languages
English (en)
Hebrew (he)
Other versions
IL217536A0 (en
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of IL217536A0 publication Critical patent/IL217536A0/en
Publication of IL217536A publication Critical patent/IL217536A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47Electrolytic deposition, i.e. electroplating; Electroless plating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Paints Or Removers (AREA)
IL217536A 2009-07-30 2012-01-15 Composition for copper electroplating comprising a source of copper ions and at least one additive, its use for electrodeposition and a process for depositing copper layer on a substrate IL217536A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22980309P 2009-07-30 2009-07-30
PCT/EP2010/060276 WO2011012462A2 (en) 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (2)

Publication Number Publication Date
IL217536A0 IL217536A0 (en) 2012-02-29
IL217536A true IL217536A (en) 2016-05-31

Family

ID=43425023

Family Applications (1)

Application Number Title Priority Date Filing Date
IL217536A IL217536A (en) 2009-07-30 2012-01-15 Composition for copper electroplating comprising a source of copper ions and at least one additive, its use for electrodeposition and a process for depositing copper layer on a substrate

Country Status (11)

Country Link
US (1) US9869029B2 (https=)
EP (1) EP2459778B1 (https=)
JP (1) JP5714581B2 (https=)
KR (1) KR101752018B1 (https=)
CN (1) CN102597329B (https=)
IL (1) IL217536A (https=)
MY (1) MY157126A (https=)
RU (1) RU2539897C2 (https=)
SG (2) SG10201404394QA (https=)
TW (1) TWI487813B (https=)
WO (1) WO2011012462A2 (https=)

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RU2539895C2 (ru) * 2009-07-30 2015-01-27 Басф Се Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности
US8790426B2 (en) 2010-04-27 2014-07-29 Basf Se Quaternized terpolymer
EP2655457B1 (en) 2010-12-21 2019-04-10 Basf Se Composition for metal electroplating comprising leveling agent
MY161354A (en) * 2011-02-22 2017-04-14 Basf Se Polymers on the basis of glycerol carbonate and an alcohol
JP6245988B2 (ja) * 2011-02-22 2017-12-13 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se グリセリンカーボネートに基づく重合体
CN103547631B (zh) 2011-06-01 2016-07-06 巴斯夫欧洲公司 包含用于自下向上填充硅穿孔和互联件特征的添加剂的金属电镀用组合物
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
RU2015121797A (ru) 2012-11-09 2017-01-10 Басф Се Композиция для электролитического осаждения металла, содержащая выравнивающий агент
CN105142386B (zh) * 2013-03-13 2020-06-23 巴斯夫欧洲公司 有效增加土壤中水分保留的保湿剂组合物和及其鉴定
PL406197A1 (pl) * 2013-11-22 2015-05-25 Inphotech Spółka Z Ograniczoną Odpowiedzialnością Sposób łączenia włókien światłowodowych pokrytych warstwą przewodzącą z elementami metalowymi
SG11201604646TA (en) * 2013-12-09 2016-07-28 Aveni Copper electrodeposition bath containing an electrochemically inert cation
US9617648B2 (en) * 2015-03-04 2017-04-11 Lam Research Corporation Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias
KR102566586B1 (ko) * 2016-07-18 2023-08-16 바스프 에스이 보이드 없는 서브미크론 피쳐 충전을 위한 첨가제를 포함하는 코발트 도금용 조성물
US11926918B2 (en) 2016-12-20 2024-03-12 Basf Se Composition for metal plating comprising suppressing agent for void free filing
US11387108B2 (en) 2017-09-04 2022-07-12 Basf Se Composition for metal electroplating comprising leveling agent
EP3714085B1 (en) * 2017-11-20 2023-08-09 Basf Se Composition for cobalt electroplating comprising leveling agent
EP3775325B1 (en) 2018-03-29 2024-08-28 Basf Se Composition for tin-silver alloy electroplating comprising a complexing agent
US10529622B1 (en) 2018-07-10 2020-01-07 International Business Machines Corporation Void-free metallic interconnect structures with self-formed diffusion barrier layers
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN114450438A (zh) 2019-09-27 2022-05-06 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
JP2023520530A (ja) 2020-04-03 2023-05-17 ビーエーエスエフ ソシエタス・ヨーロピア ポリアミノアミド型レベリング剤を含む銅バンプ電着用組成物
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
US11384446B2 (en) 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
KR20240070557A (ko) 2021-10-01 2024-05-21 바스프 에스이 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물
US20250388725A1 (en) 2022-07-07 2025-12-25 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
WO2024132828A1 (en) 2022-12-19 2024-06-27 Basf Se A composition for copper nanotwin electrodeposition
US20250149380A1 (en) * 2023-11-02 2025-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure and method of forming same

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RU2385366C1 (ru) * 2008-12-15 2010-03-27 Федеральное государственное образовательное учреждение высшего профессионального образования Российский государственный университет им. Иммануила Канта Электролит меднения стальных подложек
RU2529607C2 (ru) 2009-04-07 2014-09-27 Басф Се Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов
WO2010115796A1 (en) 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
CN104195602B (zh) 2009-04-07 2017-05-31 巴斯夫欧洲公司 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物

Also Published As

Publication number Publication date
WO2011012462A2 (en) 2011-02-03
SG177685A1 (en) 2012-02-28
US20120128888A1 (en) 2012-05-24
KR101752018B1 (ko) 2017-06-28
SG10201404394QA (en) 2014-10-30
KR20120051721A (ko) 2012-05-22
IL217536A0 (en) 2012-02-29
US9869029B2 (en) 2018-01-16
JP2013500394A (ja) 2013-01-07
TW201109477A (en) 2011-03-16
JP5714581B2 (ja) 2015-05-07
EP2459778B1 (en) 2015-01-14
EP2459778A2 (en) 2012-06-06
CN102597329A (zh) 2012-07-18
WO2011012462A3 (en) 2012-01-19
RU2012107133A (ru) 2013-09-10
MY157126A (en) 2016-05-13
CN102597329B (zh) 2015-12-16
RU2539897C2 (ru) 2015-01-27
TWI487813B (zh) 2015-06-11

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